APTM120DU15
AP
T
M
1
2
0
DU1
5
R
e
v 0 J
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APT website http://www.advancedpower.com
1 6
D2
S
Q1
D1
S2
G2
Q2
G1
S1
D2
G1
S1
S
G2
D1
S2
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol Parameter
Max ratings
Unit
V
DSS
Drain - Source Breakdown Voltage
1200
V
T
c
= 25C
60
I
D
Continuous
Drain
Current
T
c
= 80C
45
I
DM
Pulsed Drain current
240
A
V
GS
Gate - Source Voltage
30
V
R
DSon
Drain - Source ON Resistance
150
m
P
D
Maximum Power Dissipation
T
c
= 25C
1250
W
I
AR
Avalanche current (repetitive and non repetitive)
22
A
E
AR
Repetitive Avalanche Energy
50
E
AS
Single Pulse Avalanche Energy
3000
mJ
V
DSS
= 1200V
R
DSon
= 150m
max @ Tj = 25C
I
D
= 60A @ Tc = 25C
Application
AC Switches
Switched Mode Power Supplies
Uninterruptible Power Supplies
Features
Power MOS 7
MOSFETs
- Low R
DSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
Kelvin source for easy drive
Very low stray inductance
- Symmetrical design
- M5 power connectors
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
Dual common source
MOSFET Power Module
APTM120DU15
AP
T
M
1
2
0
DU1
5
R
e
v 0 J
u
l
y, 2004
APT website http://www.advancedpower.com
2 6
All ratings @ T
j
= 25C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
BV
DSS
Drain - Source Breakdown Voltage V
GS
= 0V, I
D
= 1mA
1200
V
V
GS
= 0V,V
DS
= 1200V
T
j
= 25C
400
I
DSS
Zero Gate Voltage Drain Current
V
GS
= 0V,V
DS
= 1000V
T
j
= 125C
2000
A
R
DS(on)
Drain Source on Resistance
V
GS
= 10V, I
D
= 30A
150
m
V
GS(th)
Gate
Threshold
Voltage
V
GS
= V
DS
, I
D
=
10mA
3 5 V
I
GSS
Gate Source Leakage Current
V
GS
= 30
V, V
DS
= 0V
250
nA
Dynamic Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
C
iss
Input
Capacitance
20.6
C
oss
Output
Capacitance
3.08
C
rss
Reverse Transfer Capacitance
V
GS
= 0V
V
DS
= 25V
f = 1MHz
0.52
nF
Q
g
Total gate Charge
748
Q
gs
Gate Source Charge
96
Q
gd
Gate Drain Charge
V
GS
= 10V
V
Bus
= 600V
I
D
= 60A
480
nC
T
d(on)
Turn-on
Delay
Time
20
T
r
Rise Time
15
T
d(off)
Turn-off Delay Time
160
T
f
Fall Time
Inductive switching @ 125C
V
GS
= 15V
V
Bus
= 800V
I
D
= 60A
R
G
= 1.2
45
ns
E
on
Turn-on Switching Energy
3.96
E
off
Turn-off Switching Energy
Inductive switching @ 25C
V
GS
= 15V, V
Bus
= 800V
I
D
= 60A,
R
G
= 1.2
2.74
mJ
E
on
Turn-on Switching Energy
6.26
E
off
Turn-off Switching Energy
Inductive switching @ 125C
V
GS
= 15V, V
Bus
= 800V
I
D
= 60A,
R
G
= 1.2
3.43
mJ
Source - Drain diode ratings and characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
Tc = 25C
60
I
S
Continuous Source current
(Body diode)
Tc = 80C
45
A
V
SD
Diode Forward Voltage
V
GS
= 0V, I
S
= - 60A
1.3
V
dv/dt Peak Diode Recovery
10
V/ns
t
rr
Reverse Recovery Time
1291
ns
Q
rr
Reverse Recovery Charge
I
S
= - 60A, V
R
= 600V
di
S
/dt = 400A/s
116 C
E
on
includes diode reverse recovery.
In accordance with JEDEC standard JESD24-1.
dv/dt numbers reflect the limitations of the circuit rather than the device itself.
I
S
- 60A di/dt 700A/s V
R
V
DSS
T
j
150C
APTM120DU15
AP
T
M
1
2
0
DU1
5
R
e
v 0 J
u
l
y, 2004
APT website http://www.advancedpower.com
3 6
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
R
thJC
Junction
to
Case
0.1 C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500 V
T
J
Operating junction temperature range
-40 150
T
STG
Storage Temperature Range
-40
125
T
C
Operating Case Temperature
-40
100
C
To heatsink
M6
3
5
Torque Mounting
torque
For terminals
M5
2
3.5
N.m
Wt Package
Weight
280 g
Package outline
APTM120DU15
AP
T
M
1
2
0
DU1
5
R
e
v 0 J
u
l
y, 2004
APT website http://www.advancedpower.com
4 6
Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.02
0.04
0.06
0.08
0.1
0.12
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
The
r
m
a
l
I
m
pe
da
nc
e
(
C
/
W
)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
5V
5.5V
6V
6.5V
7V
0
40
80
120
160
200
0
5
10
15
20
25
30
V
DS
, Drain to Source Voltage (V)
I
D
,
Dr
a
i
n
Cu
r
r
e
n
t
(
A
)
V
GS
=15, 10 & 8V
Low Voltage Output Characteristics
Transfert Characteristics
T
J
=-55C
T
J
=25C
T
J
=125C
0
40
80
120
160
200
240
280
320
0
1
2
3
4
5
6
7
8
9
V
GS
, Gate to Source Voltage (V)
I
D
,
Dr
a
i
n
Cu
r
r
e
n
t
(
A
)
V
DS
> I
D
(on)xR
DS
(on)MAX
250s pulse test @ < 0.5 duty cycle
R
DS(on)
vs Drain Current
V
GS
=10V
V
GS
=20V
0.8
0.9
1
1.1
1.2
1.3
1.4
0
40
80
120
160
I
D
, Drain Current (A)
R
DS
(
o
n
)
D
r
ai
n
t
o
S
o
u
r
ce O
N
R
e
si
st
an
ce
Normalized to
V
GS
=10V @ 30A
0
10
20
30
40
50
60
70
25
50
75
100
125
150
T
C
, Case Temperature (C)
I
D
,
DC
D
r
a
i
n
Cu
r
r
e
n
t
(
A
)
DC Drain Current vs Case Temperature
APTM120DU15
AP
T
M
1
2
0
DU1
5
R
e
v 0 J
u
l
y, 2004
APT website http://www.advancedpower.com
5 6
0.85
0.90
0.95
1.00
1.05
1.10
1.15
-50 -25
0
25 50 75 100 125 150
T
J
, Junction Temperature (C)
BV
DS
S
,
D
r
ai
n
t
o
S
o
u
r
ce
B
r
eak
d
o
w
n
V
o
l
t
ag
e (
N
o
r
m
a
l
i
z
e
d
)
Breakdown Voltage vs Temperature
ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
-50 -25
0
25 50 75 100 125 150
T
J
, Junction Temperature (C)
R
DS
(
o
n
)
,
D
r
a
i
n
t
o
S
o
u
r
ce O
N
r
esi
st
an
ce
(
N
or
m
a
l
i
z
e
d)
V
GS
=10V
I
D
=30A
Threshold Voltage vs Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25
0
25 50 75 100 125 150
T
C
, Case Temperature (C)
V
GS
(
T
H
)
,
Th
r
e
s
hol
d
V
o
l
t
a
g
e
(N
o
r
ma
l
i
z
e
d
)
Maximum Safe Operating Area
10ms
1ms
100s
1
10
100
1000
1
10
100
1000
V
DS
, Drain to Source Voltage (V)
I
D
,
Dr
a
i
n
Cu
r
r
e
n
t
(
A
)
limited by R
DS
on
Single pulse
T
J
=150C
1200
Ciss
Crss
Coss
100
1000
10000
100000
0
10
20
30
40
50
V
DS
, Drain to Source Voltage (V)
C
,
C
a
p
aci
t
a
n
ce (
p
F
)
Capacitance vs Drain to Source Voltage
V
DS
=240V
V
DS
=600V
V
DS
=960V
0
2
4
6
8
10
12
14
0
160
320
480
640
800
960
Gate Charge (nC)
V
GS
,
G
a
t
e
t
o
S
o
u
r
ce V
o
l
t
ag
e
(
V
)
Gate Charge vs Gate to Source Voltage
I
D
=60A
T
J
=25C
APTM120DU15
AP
T
M
1
2
0
DU1
5
R
e
v 0 J
u
l
y, 2004
APT website http://www.advancedpower.com
6 6
Delay Times vs Current
t
d(on)
t
d(off)
0
30
60
90
120
150
180
20
40
60
80
100
120
140
I
D
, Drain Current (A)
t
d(o
n
)
a
nd t
d(
off
)
(n
s
)
V
DS
=800V
R
G
=1.2
T
J
=125C
L=100H
Rise and Fall times vs Current
t
r
t
f
0
20
40
60
80
20
40
60
80
100
120
140
I
D
, Drain Current (A)
t
r
an
d
t
f
(n
s
)
V
DS
=800V
R
G
=1.2
T
J
=125C
L=100H
Switching Energy vs Current
E
on
E
off
0
2
4
6
8
10
12
20
40
60
80
100
120
140
I
D
, Drain Current (A)
S
w
i
t
ch
i
n
g
E
n
er
g
y
(
m
J)
V
DS
=800V
R
G
=1.2
T
J
=125C
L=100H
E
on
E
off
2
4
6
8
10
12
14
0.00 1.25 2.50 3.75 5.00 6.25 7.50 8.75
Gate Resistance (Ohms)
Sw
i
t
c
h
i
n
g
Ene
r
gy
(
m
J
)
Switching Energy vs Gate Resistance
V
DS
=800V
I
D
=60A
T
J
=125C
L=100H
Hard
switching
ZCS
ZVS
0
50
100
150
200
250
5
15
25
35
45
55
I
D
, Drain Current (A)
F
r
eq
u
e
n
cy (
k
H
z
)
Operating Frequency vs Drain Current
V
DS
=800V
D=50%
R
G
=1.2
T
J
=125C
T
C
=75C
T
J
=25C
T
J
=150C
1
10
100
1000
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
V
SD
, Source to Drain Voltage (V)
I
DR
,
R
ever
se D
r
ai
n
C
u
r
r
e
n
t
(
A
)
Source to Drain Diode Forward Voltage
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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