APTM120DDA57T3
A
P
T
M
120D
D
A
57T
3
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APT website http://www.advancedpower.com
1 6
14
13
Q1
Q2
23
8
22
7
CR1
CR2
30
29
32
4
26
3
27
31
16
15
R1
16
15
18
20
23 22
13
11 12
14
8
7
29
30
28 27 26
3
32
31
10
19
2
25
4
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 ...
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol Parameter
Max ratings
Unit
V
DSS
Drain - Source Breakdown Voltage
1200
V
T
c
= 25C
17
I
D
Continuous
Drain
Current
T
c
= 80C
13
I
DM
Pulsed Drain current
68
A
V
GS
Gate - Source Voltage
30
V
R
DSon
Drain - Source ON Resistance
570
m
P
D
Maximum Power Dissipation
T
c
= 25C
390
W
I
AR
Avalanche current (repetitive and non repetitive)
22
A
E
AR
Repetitive Avalanche Energy
50
E
AS
Single Pulse Avalanche Energy
3000
mJ
V
DSS
= 1200V
R
DSon
= 570m
max @ Tj = 25C
I
D
= 17A @ Tc = 25C
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Features
Power MOS 7
MOSFETs
- Low R
DSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
Kelvin source for easy drive
Very low stray inductance
- Symmetrical design
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Each leg can be easily paralleled to achieve a single
boost of twice the current capability
Dual Boost chopper
MOSFET Power Module
APTM120DDA57T3
A
P
T
M
120D
D
A
57T
3
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APT website http://www.advancedpower.com
2 6
All ratings @ T
j
= 25C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
BV
DSS
Drain - Source Breakdown Voltage V
GS
= 0V, I
D
= 250A
1200
V
V
GS
= 0V,V
DS
= 1200V
T
j
= 25C
100
I
DSS
Zero Gate Voltage Drain Current
V
GS
= 0V,V
DS
= 1000V
T
j
= 125C
500
A
R
DS(on)
Drain Source on Resistance
V
GS
= 10V, I
D
= 8.5A
570
m
V
GS(th)
Gate
Threshold
Voltage
V
GS
= V
DS
, I
D
=
2.5mA
3 5 V
I
GSS
Gate Source Leakage Current
V
GS
= 30
V, V
DS
= 0V
100
nA
Dynamic Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
C
iss
Input
Capacitance
5155
C
oss
Output
Capacitance
770
C
rss
Reverse Transfer Capacitance
V
GS
= 0V
V
DS
= 25V
f = 1MHz
130
pF
Q
g
Total gate Charge
187
Q
gs
Gate Source Charge
24
Q
gd
Gate Drain Charge
V
GS
= 10V
V
Bus
= 600V
I
D
= 17A
120
nC
T
d(on)
Turn-on
Delay
Time
20
T
r
Rise Time
15
T
d(off)
Turn-off Delay Time
160
T
f
Fall Time
Inductive switching @ 125C
V
GS
= 15V
V
Bus
= 800V
I
D
= 17A
R
G
= 5
45
ns
E
on
Turn-on Switching Energy
990
E
off
Turn-off Switching Energy
Inductive switching @ 25C
V
GS
= 15V, V
Bus
= 800V
I
D
= 17A,
R
G
= 5
685
J
E
on
Turn-on Switching Energy
1565
E
off
Turn-off Switching Energy
Inductive switching @ 125C
V
GS
= 15V, V
Bus
= 800V
I
D
= 17A,
R
G
= 5
857
J
Reverse diode ratings and characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
V
RRM
Maximum Peak Repetitive Reverse Voltage
1200
V
T
j
= 25C
250
I
RM
Maximum Reverse Leakage Current
V
R
=1200V
T
j
= 125C
500
A
I
F(A V)
Maximum Average Forward Current
50% duty cycle
Tc = 80C
25
A
T
j
= 25C
2.3
2.8
V
F
Diode Forward Voltage
I
F
= 25A
V
GE
= 0V
T
j
= 125C
1.8
V
t
rr
Reverse Recovery Time
T
j
= 125C
0.13
s
T
j
= 25C
2.3
Q
rr
Reverse Recovery Charge
I
F
= 25A
V
R
= 600V
di/dt =800A/s
T
j
= 125C
6
C
E
on
includes diode reverse recovery.
In accordance with JEDEC standard JESD24-1.
APTM120DDA57T3
A
P
T
M
120D
D
A
57T
3
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APT website http://www.advancedpower.com
3 6
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT 0.32
R
thJC
Junction
to
Case
Diode 1.2
C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
V
T
J
Operating junction temperature range
-40 150
T
STG
Storage Temperature Range
-40
125
T
C
Operating Case Temperature
-40
100
C
Torque Mounting torque
To heatsink
M4
4.7
N.m
Wt Package
Weight
110 g
Temperature sensor NTC
Symbol Characteristic
Min Typ Max Unit
R
25
Resistance @ 25C
68 k
B
25/85
T
25
= 298.16 K
4080
K
-
=
T
T
B
R
R
T
1
1
exp
25
85
/
25
25
Package outline
17
12
28
1
T: Thermistor temperature
R
T
: Thermistor value at T
APTM120DDA57T3
A
P
T
M
120D
D
A
57T
3
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APT website http://www.advancedpower.com
4 6
Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
The
r
m
a
l
I
m
pe
da
nc
e
(
C
/
W
)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
5V
5.5V
6V
6.5V
7V
0
10
20
30
40
50
0
5
10
15
20
25
30
V
DS
, Drain to Source Voltage (V)
I
D
,
Dr
a
i
n
Cu
r
r
e
n
t
(
A
)
V
GS
=15, 10 & 8V
Low Voltage Output Characteristics
Transfert Characteristics
T
J
=-55C
T
J
=25C
T
J
=125C
0
10
20
30
40
50
60
70
80
0
1
2
3
4
5
6
7
8
9
V
GS
, Gate to Source Voltage (V)
I
D
,
Dr
a
i
n
Cu
r
r
e
n
t
(
A
)
V
DS
> I
D
(on)xR
DS
(on)MAX
250s pulse test @ < 0.5 duty cycle
R
DS(on)
vs Drain Current
V
GS
=10V
V
GS
=20V
0.8
0.9
1
1.1
1.2
1.3
1.4
0
10
20
30
40
I
D
, Drain Current (A)
R
DS
(
o
n
)
D
r
ai
n
t
o
S
o
u
r
ce O
N
R
e
si
st
an
ce
Normalized to
V
GS
=10V @ 8.5A
0
4
8
12
16
20
25
50
75
100
125
150
T
C
, Case Temperature (C)
I
D
,
DC
D
r
a
i
n
Cu
r
r
e
n
t
(
A
)
DC Drain Current vs Case Temperature
APTM120DDA57T3
A
P
T
M
120D
D
A
57T
3
R
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pt
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, 2004
APT website http://www.advancedpower.com
5 6
0.85
0.90
0.95
1.00
1.05
1.10
1.15
-50 -25
0
25 50 75 100 125 150
T
J
, Junction Temperature (C)
BV
DS
S
,
D
r
ai
n
t
o
S
o
u
r
ce
B
r
eak
d
o
w
n
V
o
l
t
ag
e (
N
o
r
m
a
l
i
z
e
d
)
Breakdown Voltage vs Temperature
ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
-50 -25
0
25 50 75 100 125 150
T
J
, Junction Temperature (C)
R
DS
(
o
n
)
,
D
r
a
i
n
t
o
S
o
u
r
ce O
N
r
esi
st
an
ce
(
N
or
m
a
l
i
z
e
d)
V
GS
=10V
I
D
=8.5A
Threshold Voltage vs Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25
0
25 50 75 100 125 150
T
C
, Case Temperature (C)
V
GS
(
T
H
)
,
Th
r
e
s
hol
d
V
o
l
t
a
g
e
(N
o
r
ma
l
i
z
e
d
)
Maximum Safe Operating Area
10ms
1ms
100s
1
10
100
1
10
100
1000
V
DS
, Drain to Source Voltage (V)
I
D
,
Dr
a
i
n
Cu
r
r
e
n
t
(
A
)
limited by R
DS
on
Single pulse
T
J
=150C
1200
Ciss
Crss
Coss
100
1000
10000
100000
0
10
20
30
40
50
V
DS
, Drain to Source Voltage (V)
C
,
C
a
p
aci
t
a
n
ce (
p
F
)
Capacitance vs Drain to Source Voltage
V
DS
=240V
V
DS
=600V
V
DS
=960V
0
2
4
6
8
10
12
14
0
40
80
120
160
200
240
Gate Charge (nC)
V
GS
,
G
a
t
e
t
o
S
o
u
r
ce V
o
l
t
ag
e
(
V
)
Gate Charge vs Gate to Source Voltage
I
D
=17A
T
J
=25C
APTM120DDA57T3
A
P
T
M
120D
D
A
57T
3
R
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e
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, 2004
APT website http://www.advancedpower.com
6 6
Delay Times vs Current
t
d(on)
t
d(off)
0
20
40
60
80
100
120
140
160
180
5
10
15
20
25
30
35
I
D
, Drain Current (A)
t
d(o
n
)
a
nd t
d(
off
)
(n
s
)
V
DS
=800V
R
G
=5
T
J
=125C
L=100H
Rise and Fall times vs Current
t
r
t
f
0
20
40
60
80
5
10
15
20
25
30
35
I
D
, Drain Current (A)
t
r
an
d
t
f
(n
s
)
V
DS
=800V
R
G
=5
T
J
=125C
L=100H
Switching Energy vs Current
E
on
E
off
0
0.5
1
1.5
2
2.5
3
5
10
15
20
25
30
35
I
D
, Drain Current (A)
S
w
i
t
ch
i
n
g
E
n
er
g
y
(
m
J)
V
DS
=800V
R
G
=5
T
J
=125C
L=100H
E
on
E
off
0
1
2
3
4
0
5
10
15
20
25
30
35
Gate Resistance (Ohms)
Sw
i
t
c
h
i
n
g
Ene
r
gy
(
m
J
)
Switching Energy vs Gate Resistance
V
DS
=800V
I
D
=17A
T
J
=125C
L=100H
Hard
switching
ZCS
ZVS
0
25
50
75
100
125
150
175
200
225
4
6
8
10
12
14
16
I
D
, Drain Current (A)
F
r
eq
u
e
n
cy (
k
H
z
)
Operating Frequency vs Drain Current
V
DS
=800V
D=50%
R
G
=5
T
J
=125C
T
C
=75C
T
J
=25C
T
J
=150C
1
10
100
1000
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
V
SD
, Source to Drain Voltage (V)
I
DR
,
R
ever
se D
r
ai
n
C
u
r
r
e
n
t
(
A
)
Source to Drain Diode Forward Voltage
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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