APTM10DUM05T
A
P
T
M
10D
U
M
05T
R
e
v 0 M
a
y, 2005
APT website http://www.advancedpower.com
1 - 6
S
Q1
Q2
D2
S2
S1
G1
G2
D1
NTC1
NTC2
S2
G2
NTC2
OUT
OUT
VBUS
NTC1
S1
S2
G2
0/VBUS
G1
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol Parameter
Max ratings
Unit
V
DSS
Drain - Source Breakdown Voltage
100
V
T
c
= 25C
278
I
D
Continuous
Drain
Current
T
c
= 80C
207
I
DM
Pulsed Drain current
1100
A
V
GS
Gate - Source Voltage
30
V
R
DSon
Drain - Source ON Resistance
5
m
P
D
Maximum Power Dissipation
T
c
= 25C
780
W
I
AR
Avalanche current (repetitive and non repetitive)
100
A
E
AR
Repetitive Avalanche Energy
50
E
AS
Single Pulse Avalanche Energy
3000
mJ
V
DSS
= 100V
R
DSon
= 4.5m
typ @ Tj = 25C
I
D
= 278A @ Tc = 25C
Application
AC Switches
Switched Mode Power Supplies
Uninterruptible Power Supplies
Features
Power MOS V
MOSFETs
- Low R
DSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
Kelvin source for easy drive
Very low stray inductance
- Symmetrical design
- Lead frames for power connections
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Dual common source
MOSFET Power Module
APTM10DUM05T
A
P
T
M
10D
U
M
05T
R
e
v 0 M
a
y, 2005
APT website http://www.advancedpower.com
2 - 6
All ratings @ T
j
= 25C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
V
GS
= 0V,V
DS
= 100V
T
j
= 25C
200
I
DSS
Zero Gate Voltage Drain Current
V
GS
= 0V,V
DS
= 80V
T
j
= 125C
1000
A
R
DS(on)
Drain Source on Resistance
V
GS
= 10V, I
D
= 125A
4.5 5 m
V
GS(th)
Gate
Threshold
Voltage
V
GS
= V
DS
, I
D
=
5mA
2 4 V
I
GSS
Gate Source Leakage Current
V
GS
= 30
V, V
DS
= 0V
200
nA
Dynamic Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
C
iss
Input
Capacitance
20
C
oss
Output
Capacitance
8
C
rss
Reverse Transfer Capacitance
V
GS
= 0V
V
DS
= 25V
f = 1MHz
2.9
nF
Q
g
Total gate Charge
700
Q
gs
Gate Source Charge
120
Q
gd
Gate Drain Charge
V
GS
= 10V
V
Bus
= 50V
I
D
= 250A
360
nC
T
d(on)
Turn-on
Delay
Time
80
T
r
Rise Time
165
T
d(off)
Turn-off Delay Time
280
T
f
Fall Time
Resistive Switching
V
GS
= 15V
V
Bus
= 66V
I
D
=
250A
R
G
= 2.5
135
ns
E
on
Turn-on Switching Energy
1.1
E
off
Turn-off Switching Energy
Inductive switching @ 25C
V
GS
= 15V, V
Bus
= 66V
I
D
= 250A,
R
G
=2.5
1.2
mJ
E
on
Turn-on Switching Energy
1.22
E
off
Turn-off Switching Energy
Inductive switching @ 125C
V
GS
= 15V, V
Bus
= 66V
I
D
= 250A, R
G
= 2.5
1.28
mJ
Source - Drain diode ratings and characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
Tc = 25C
278
I
S
Continuous Source current
(Body diode)
Tc = 80C
207
A
V
SD
Diode Forward Voltage
V
GS
= 0V, I
S
= - 250A
1.3
V
dv/dt
Peak Diode Recovery
5
V/ns
t
rr
Reverse Recovery Time
T
j
= 25C
270
ns
Q
rr
Reverse Recovery Charge
I
S
= - 250A
V
R
= 50V
di
S
/dt = 200A/s
T
j
= 25C
5.8
C
E
on
includes diode reverse recovery.
In accordance with JEDEC standard JESD24-1.
dv/dt numbers reflect the limitations of the circuit rather than the device itself.
I
S
- 278A di/dt 200A/s V
R
V
DSS
T
j
150C
APTM10DUM05T
A
P
T
M
10D
U
M
05T
R
e
v 0 M
a
y, 2005
APT website http://www.advancedpower.com
3 - 6
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
R
thJC
Junction
to
Case
0.16 C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
V
T
J
Operating junction temperature range
-40 150
T
STG
Storage Temperature Range
-40
125
T
C
Operating Case Temperature
-40
100
C
Torque Mounting torque
To Heatsink
M5
1.5
4.7
N.m
Wt Package
Weight
160 g
Temperature sensor NTC
(see application note APT0406 on www.advancedpower.com for more information).
Symbol Characteristic
Min Typ Max Unit
R
25
Resistance @ 25C
50
k
B
25/85
T
25
= 298.15 K
3952
K
-
=
T
T
B
R
R
T
1
1
exp
25
85
/
25
25
Package outline
(dimensions in mm)
T: Thermistor temperature
R
T
: Thermistor value at T
APTM10DUM05T
A
P
T
M
10D
U
M
05T
R
e
v 0 M
a
y, 2005
APT website http://www.advancedpower.com
4 - 6
Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
The
r
m
a
l
I
m
pe
da
nc
e
(
C
/
W
)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
6V
7V
8V
0
200
400
600
800
1000
1200
0
4
8
12
16
20
24
28
V
DS
, Drain to Source Voltage (V)
I
D
,
Dr
a
i
n
Cu
r
r
e
n
t
(
A
)
Low Voltage Output Characteristics
V
GS
=15V, 10V & 9V
Transfert Characteristics
T
J
=-55C
T
J
=25C
T
J
=125C
0
40
80
120
160
200
240
0
1
2
3
4
5
6
7
V
GS
, Gate to Source Voltage (V)
I
D
,
D
r
a
i
n
C
u
r
r
e
nt
(
A
)
V
DS
> I
D
(on)xR
DS
(on)MAX
250s pulse test @ < 0.5 duty cycle
R
DS(on)
vs Drain Current
V
GS
=10V
V
GS
=20V
0.8
0.9
1
1.1
1.2
0
25
50
75 100 125 150 175 200
I
D
, Drain Current (A)
R
DS
(
o
n
)
D
r
ai
n
t
o
S
o
u
r
ce O
N
R
e
s
i
st
an
ce
Normalized to
V
GS
=10V @ 125A
0
50
100
150
200
250
300
25
50
75
100
125
150
T
C
, Case Temperature (C)
I
D
,
DC
D
r
a
i
n
Cu
r
r
e
n
t
(
A
)
DC Drain Current vs Case Temperature
APTM10DUM05T
A
P
T
M
10D
U
M
05T
R
e
v 0 M
a
y, 2005
APT website http://www.advancedpower.com
5 - 6
0.90
0.95
1.00
1.05
1.10
1.15
-50 -25
0
25 50 75 100 125 150
T
J
, Junction Temperature (C)
BV
DS
S
,
D
r
a
i
n
t
o
S
o
u
r
c
e
B
r
e
a
k
dow
n
Vo
l
t
a
g
e
(
No
r
m
a
l
i
z
e
d
)
Breakdown Voltage vs Temperature
ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
-50 -25
0
25 50 75 100 125 150
T
J
, Junction Temperature (C)
R
D
S
(
o
n
)
,
D
r
ai
n
t
o
S
o
u
r
ce O
N
r
esi
s
t
an
ce
(N
o
r
ma
l
i
z
e
d
)
V
GS
=10V
I
D
= 125A
Threshold Voltage vs Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25
0
25 50 75 100 125 150
T
C
, Case Temperature (C)
V
GS
(
T
H
)
,
Thr
e
s
h
ol
d
V
o
l
t
a
g
e
(
N
or
m
a
l
i
z
e
d)
Maximum Safe Operating Area
10ms
1ms
100s
10
100
1000
1
10
100
V
DS
, Drain to Source Voltage (V)
I
D
, D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
Single pulse
T
J
=150C
limited by
R
DSon
Ciss
Crss
Coss
1000
10000
100000
0
10
20
30
40
50
V
DS
, Drain to Source Voltage (V)
C
,
C
a
p
aci
t
a
n
ce (
p
F
)
Capacitance vs Drain to Source Voltage
V
DS
=20V
V
DS
=50V
V
DS
=80V
0
2
4
6
8
10
12
14
16
0
200
400
600
800
1000
Gate Charge (nC)
V
GS
,
G
a
t
e
t
o
S
o
u
r
ce V
o
l
t
ag
e
(
V
)
Gate Charge vs Gate to Source Voltage
I
D
=250A
T
J
=25C
APTM10DUM05T
A
P
T
M
10D
U
M
05T
R
e
v 0 M
a
y, 2005
APT website http://www.advancedpower.com
6 - 6
Delay Times vs Current
t
d(on)
t
d(off)
0
50
100
150
200
250
300
350
0
100
200
300
400
I
D
, Drain Current (A)
t
d(
o
n
)
an
d
t
d(o
ff)
(n
s
)
V
DS
=66V
R
G
=2.5
T
J
=125C
L=100H
Rise and Fall times vs Current
t
r
t
f
0
50
100
150
200
250
0
100
200
300
400
I
D
, Drain Current (A)
t
r
a
nd t
f
(n
s
)
V
DS
=66V
R
G
=2.5
T
J
=125C
L=100H
Switching Energy vs Current
E
on
E
off
0
0.5
1
1.5
2
2.5
3
0
100
200
300
400
I
D
, Drain Current (A)
E
on
a
nd E
of
f
(m
J
)
V
DS
=66V
R
G
=2.5
T
J
=125C
L=100H
E
on
E
off
0
1
2
3
4
5
0
5
10
15
20
25
30
Gate Resistance (Ohms)
Sw
i
t
c
h
i
n
g
En
e
r
g
y
(
m
J
)
Switching Energy vs Gate Resistance
V
DS
=66V
I
D
=200A
T
J
=125C
L=100H
Hard
switching
ZVS
ZCS
0
20
40
60
80
100
50
100
150
200
250
I
D
, Drain Current (A)
Fr
e
que
nc
y
(
k
H
z
)
Operating Frequency vs Drain Current
V
DS
=66V
D=50%
R
G
=2.5
T
J
=125C
T
C
=75C
T
J
=25C
T
J
=150C
1
10
100
1000
0.3
0.5
0.7
0.9
1.1
1.3
1.5
V
SD
, Source to Drain Voltage (V)
I
DR
,
R
ever
se
D
r
ai
n
C
u
r
r
en
t
(
A
)
Source to Drain Diode Forward Voltage
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
PDF 
ZIP