APTM100UM60F-AlN
A
P
T
M
100U
M
60F
A
l
N
R
e
v 0 J
u
l
y, 2004
APT website http://www.advancedpower.com
1 6
D
G
DK
S
SK
D
S
DK
G
SK
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol Parameter
Max ratings
Unit
V
DSS
Drain - Source Breakdown Voltage
1000
V
T
c
= 25C
129
I
D
Continuous
Drain
Current
T
c
= 80C
97
I
DM
Pulsed Drain current
516
A
V
GS
Gate - Source Voltage
30
V
R
DSon
Drain - Source ON Resistance
60
m
P
D
Maximum Power Dissipation
T
c
= 25C
2272
W
I
AR
Avalanche current (repetitive and non repetitive)
25
A
E
AR
Repetitive Avalanche Energy
50
E
AS
Single Pulse Avalanche Energy
3000
mJ
V
DSS
= 1000V
R
DSon
= 60m
max @ Tj = 25C
I
D
= 129A @ Tc = 25C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Power MOS 7
FREDFETs
- Low R
DSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
Kelvin source for easy drive
Very low stray inductance
- Symmetrical design
- M5 power connectors
High level of integration
AlN substrate for improved thermal performance
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
Single Switch
MOSFET Power Module
APTM100UM60F-AlN
A
P
T
M
100U
M
60F
A
l
N
R
e
v 0 J
u
l
y, 2004
APT website http://www.advancedpower.com
2 6
All ratings @ T
j
= 25C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
BV
DSS
Drain - Source Breakdown Voltage V
GS
= 0V, I
D
= 1.5mA
1000
V
V
GS
= 0V,V
DS
= 1000V
T
j
= 25C
1.5
I
DSS
Zero Gate Voltage Drain Current
V
GS
= 0V,V
DS
= 800V
T
j
= 125C
5
mA
R
DS(on)
Drain Source on Resistance
V
GS
= 10V, I
D
= 64.5A
60
m
V
GS(th)
Gate
Threshold
Voltage
V
GS
= V
DS
, I
D
=
15mA
3 5 V
I
GSS
Gate Source Leakage Current
V
GS
= 30
V, V
DS
= 0V
500
nA
Dynamic Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
C
iss
Input
Capacitance
31.1
C
oss
Output
Capacitance
5.28
C
rss
Reverse Transfer Capacitance
V
GS
= 0V
V
DS
= 25V
f = 1MHz
0.96
nF
Q
g
Total gate Charge
1116
Q
gs
Gate Source Charge
144
Q
gd
Gate Drain Charge
V
GS
= 10V
V
Bus
= 500V
I
D
= 129A
732
nC
T
d(on)
Turn-on
Delay
Time
18
T
r
Rise Time
12
T
d(off)
Turn-off Delay Time
155
T
f
Fall Time
Inductive switching @ 125C
V
GS
= 15V
V
Bus
= 670V
I
D
= 129A
R
G
=0.8
40
ns
E
on
Turn-on Switching Energy
5.4
E
off
Turn-off Switching Energy
Inductive switching @ 25C
V
GS
= 15V, V
Bus
= 670V
I
D
= 129A,
R
G
= 0.8
3.7
mJ
E
on
Turn-on Switching Energy
8.5
E
off
Turn-off Switching Energy
Inductive switching @ 125C
V
GS
= 15V, V
Bus
= 670V
I
D
= 129A,
R
G
= 0.8
4.7
mJ
Source - Drain diode ratings and characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
Tc = 25C
129
I
S
Continuous Source current
(Body diode)
Tc = 80C
97
A
V
SD
Diode Forward Voltage
V
GS
= 0V, I
S
= - 129A
1.3
V
dv/dt
Peak Diode Recovery
18
V/ns
T
j
= 25C
320
t
rr
Reverse Recovery Time
I
S
= - 129A
V
R
= 500V
di
S
/dt = 600A/s
T
j
= 125C
650
ns
T
j
= 25C
21.6
Q
rr
Reverse Recovery Charge
I
S
= - 129A
V
R
= 500V
di
S
/dt = 600A/s
T
j
= 125C
58.3
C
E
on
includes diode reverse recovery.
In accordance with JEDEC standard JESD24-1.
dv/dt numbers reflect the limitations of the circuit rather than the device itself.
I
S
- 129A di/dt 700A/s V
R
V
DSS
T
j
150C
APTM100UM60F-AlN
A
P
T
M
100U
M
60F
A
l
N
R
e
v 0 J
u
l
y, 2004
APT website http://www.advancedpower.com
3 6
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
R
thJC
Junction
to
Case
0.055 C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500 V
T
J
Operating junction temperature range
-40 150
T
STG
Storage Temperature Range
-40
125
T
C
Operating Case Temperature
-40
100
C
To heatsink
M6
3
5
Torque Mounting
torque
For terminals
M5
2
3.5
N.m
Wt Package
Weight
280 g
Package outline
APTM100UM60F-AlN
A
P
T
M
100U
M
60F
A
l
N
R
e
v 0 J
u
l
y, 2004
APT website http://www.advancedpower.com
4 6
Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.01
0.02
0.03
0.04
0.05
0.06
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
The
r
m
a
l
I
m
pe
da
nc
e
(
C
/
W
)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
5V
5.5V
6V
6.5V
7V
0
60
120
180
240
300
360
0
5
10
15
20
25
30
V
DS
, Drain to Source Voltage (V)
I
D
,
Dr
a
i
n
Cu
r
r
e
n
t
(
A
)
V
GS
=15, 10&8V
Low Voltage Output Characteristics
Transfert Characteristics
T
J
=-55C
T
J
=25C
T
J
=125C
0
60
120
180
240
300
360
420
480
0
1
2
3
4
5
6
7
8
9
V
GS
, Gate to Source Voltage (V)
I
D
,
Dr
a
i
n
Cu
r
r
e
n
t
(
A
)
V
DS
> I
D
(on)xR
DS
(on)MAX
250s pulse test @ < 0.5 duty cycle
R
DS(on)
vs Drain Current
V
GS
=10V
V
GS
=20V
0.8
0.9
1
1.1
1.2
1.3
1.4
0
50
100 150 200 250 300 350
I
D
, Drain Current (A)
R
DS
(
o
n
)
D
r
ai
n
t
o
S
o
u
r
ce O
N
R
e
si
st
an
ce
Normalized to
V
GS
=10V @ 64.5A
0
20
40
60
80
100
120
140
25
50
75
100
125
150
T
C
, Case Temperature (C)
I
D
,
DC
D
r
a
i
n
Cu
r
r
e
n
t
(
A
)
DC Drain Current vs Case Temperature
APTM100UM60F-AlN
A
P
T
M
100U
M
60F
A
l
N
R
e
v 0 J
u
l
y, 2004
APT website http://www.advancedpower.com
5 6
0.85
0.90
0.95
1.00
1.05
1.10
1.15
-50 -25
0
25 50 75 100 125 150
T
J
, Junction Temperature (C)
BV
DS
S
,
D
r
ai
n
t
o
S
o
u
r
ce
B
r
eak
d
o
w
n
V
o
l
t
ag
e (
N
o
r
m
a
l
i
z
e
d
)
Breakdown Voltage vs Temperature
ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
-50 -25
0
25 50 75 100 125 150
T
J
, Junction Temperature (C)
R
DS
(
o
n
)
,
D
r
a
i
n
t
o
S
o
u
r
ce O
N
r
esi
st
an
ce
(
N
or
m
a
l
i
z
e
d)
V
GS
=10V
I
D
=64.5A
Threshold Voltage vs Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25
0
25 50 75 100 125 150
T
C
, Case Temperature (C)
V
GS
(
T
H
)
,
Th
r
e
s
hol
d
V
o
l
t
a
g
e
(N
o
r
ma
l
i
z
e
d
)
Maximum Safe Operating Area
10ms
1ms
100s
1
10
100
1000
1
10
100
1000
V
DS
, Drain to Source Voltage (V)
I
D
,
Dr
a
i
n
Cu
r
r
e
n
t
(
A
)
limited by R
DS
on
Single pulse
T
J
=150C
Ciss
Crss
Coss
100
1000
10000
100000
0
10
20
30
40
50
V
DS
, Drain to Source Voltage (V)
C
,
C
a
p
aci
t
a
n
ce (
p
F
)
Capacitance vs Drain to Source Voltage
V
DS
=200V
V
DS
=500V
V
DS
=800V
0
2
4
6
8
10
12
14
0
250
500
750 1000 1250 1500
Gate Charge (nC)
V
GS
,
G
a
t
e
t
o
S
o
u
r
ce V
o
l
t
ag
e
(
V
)
Gate Charge vs Gate to Source Voltage
I
D
=129A
T
J
=25C
APTM100UM60F-AlN
A
P
T
M
100U
M
60F
A
l
N
R
e
v 0 J
u
l
y, 2004
APT website http://www.advancedpower.com
6 6
Delay Times vs Current
t
d(on)
t
d(off)
0
40
80
120
160
200
40
80
120
160
200
240
I
D
, Drain Current (A)
t
d(o
n
)
a
nd t
d(
off
)
(n
s
)
V
DS
=670V
R
G
=0.8
T
J
=125C
L=100H
Rise and Fall times vs Current
t
r
t
f
0
20
40
60
80
40
80
120
160
200
240
I
D
, Drain Current (A)
t
r
an
d
t
f
(n
s
)
V
DS
=670V
R
G
=0.8
T
J
=125C
L=100H
Switching Energy vs Current
E
on
E
off
0
2.5
5
7.5
10
12.5
15
40
80
120
160
200
240
I
D
, Drain Current (A)
S
w
i
t
ch
i
n
g
E
n
er
g
y
(
m
J)
V
DS
=670V
R
G
=0.8
T
J
=125C
L=100H
E
on
E
off
0
4
8
12
16
20
0
1
2
3
4
5
6
Gate Resistance (Ohms)
Sw
i
t
c
h
i
n
g
Ene
r
gy
(
m
J
)
Switching Energy vs Gate Resistance
V
DS
=670V
I
D
=129A
T
J
=125C
L=100H
Hard
switching
ZCS
ZVS
0
50
100
150
200
250
10
30
50
70
90
110
130
I
D
, Drain Current (A)
F
r
e
que
nc
y
(
k
H
z
)
Operating Frequency vs Drain Current
V
DS
=670V
D=50%
R
G
=0.8
T
J
=125C
T
C
=75C
T
J
=25C
T
J
=150C
1
10
100
1000
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
V
SD
, Source to Drain Voltage (V)
I
DR
,
R
ever
se D
r
ai
n
C
u
r
r
e
n
t
(
A
)
Source to Drain Diode Forward Voltage
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
PDF 
ZIP