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Электронный компонент: APTM100UM45D-ALN

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APTM100UM45D-AlN
A
P
T
M
100U
M
45D
-
A
l
N
R
e
v 0 J
u
l
y, 2004
APT website http://www.advancedpower.com
1 6






SK
DK
G
S
D



D
S
DK
G
SK


Absolute maximum ratings

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol Parameter
Max ratings
Unit
V
DSS
Drain - Source Breakdown Voltage
1000
V
T
c
= 25C
215
I
D
Continuous
Drain
Current
T
c
= 80C
160
I
DM
Pulsed Drain current
860
A
V
GS
Gate - Source Voltage
30
V
R
DSon
Drain - Source ON Resistance
45
m
P
D
Maximum Power Dissipation
T
c
= 25C
5000
W
I
AR
Avalanche current (repetitive and non repetitive)
30
A
E
AR
Repetitive Avalanche Energy
50
E
AS
Single Pulse Avalanche Energy
3200
mJ
V
DSS
= 1000V
R
DSon
= 45m max @ Tj = 25C
I
D
= 215A @ Tc = 25C
Application
Zero Current Switching resonant mode

Features
Power MOS 7
MOSFETs
- Low R
DSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
Kelvin source for easy drive
Very low stray inductance
- Symmetrical design
- M5 power connectors
High level of integration
AlN substrate for improved thermal performance
Benefits
Outstanding performance at high frequency
operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
Single switch
with Series diode
MOSFET Power Module
APTM100UM45D-AlN
A
P
T
M
100U
M
45D
-
A
l
N
R
e
v 0 J
u
l
y, 2004
APT website http://www.advancedpower.com
2 6
All ratings @ T
j
= 25C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
BV
DSS
Drain - Source Breakdown Voltage
V
GS
= 0V, I
D
= 1.5mA
1000
V
V
GS
= 0V,V
DS
= 1000V
T
j
= 25C
600
A
I
DSS
Zero Gate Voltage Drain Current
V
GS
= 0V,V
DS
= 800V
T
j
= 125C
3
mA
R
DS(on)
Drain Source on Resistance
V
GS
= 10V, I
D
= 107.5A
45
m
V
GS(th)
Gate
Threshold
Voltage
V
GS
= V
DS
, I
D
=
30mA
3 5 V
I
GSS
Gate Source Leakage Current
V
GS
= 30 V, V
DS
= 0V
600
nA
Dynamic Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
C
iss
Input
Capacitance
42.7
C
oss
Output
Capacitance
7.6
C
rss
Reverse Transfer Capacitance
V
GS
= 0V
V
DS
= 25V
f = 1MHz
1.3
nF
Q
g
Total gate Charge
1602
Q
gs
Gate Source Charge
204
Q
gd
Gate Drain Charge
V
GS
= 10V
V
Bus
= 500V
I
D
= 215A
1038
nC
T
d(on)
Turn-on
Delay
Time
18
T
r
Rise Time
14
T
d(off)
Turn-off Delay Time
140
T
f
Fall Time
Inductive switching @ 125C
V
GS
= 15V
V
Bus
= 670V
I
D
= 215A
R
G
= 0.5
55
ns
E
on
Turn-on Switching Energy
7.2
E
off
Turn-off Switching Energy
Inductive switching @ 25C
V
GS
= 15V, V
Bus
= 670V
I
D
= 215A,
R
G
= 0.5
4.3
mJ
E
on
Turn-on Switching Energy
12
E
off
Turn-off Switching Energy
Inductive switching @ 125C
V
GS
= 15V, V
Bus
= 670V
I
D
= 215A,
R
G
= 0.5
5.8
mJ
E
on
includes diode reverse recovery.
In accordance with JEDEC standard JESD24-1.

Series diode ratings and characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
V
RRM
Maximum Repetitive Reverse Voltage
1000 V
I
RM
Maximum Reverse Leakage Current
V
R
=1000V
T
j
= 125C
3
mA
I
F(A V)
Maximum Average Forward Current 50% duty cycle
T
j
= 90C
360 A
I
F
= 360A
1.9
2.5
I
F
= 720A
2.2
V
F
Diode Forward Voltage
I
F
= 360A
T
j
= 125C
1.7
V
T
j
= 25C
280
t
rr
Reverse Recovery Time
I
F
= 360A
V
R
= 667V
di/dt = 800A/s
T
j
= 125C
350
ns
T
j
= 25C
4.56
Q
rr
Reverse Recovery Charge
I
F
= 360A
V
R
= 667V
di/dt = 800A/s
T
j
= 125C
21.6
C
APTM100UM45D-AlN
A
P
T
M
100U
M
45D
-
A
l
N
R
e
v 0 J
u
l
y, 2004
APT website http://www.advancedpower.com
3 6
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
Transistor
0.025
R
thJC
Junction
to
Case
Series diode
0.12
C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
V
T
J
Operating junction temperature range
-40 150
T
STG
Storage Temperature Range
-40
125
T
C
Operating Case Temperature
-40
100
C
To Heatsink
M6
3
5
Torque Mounting
torque
For teminals
M5
2
3.5
N.m
Wt Package
Weight
280 g
Package outline
APTM100UM45D-AlN
A
P
T
M
100U
M
45D
-
A
l
N
R
e
v 0 J
u
l
y, 2004
APT website http://www.advancedpower.com
4 6
Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.005
0.01
0.015
0.02
0.025
0.03
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
T
h
e
r
m
a
l
I
m
pe
da
nc
e

(

C
/
W
)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
5V
5.5V
6V
6.5V
7V
0
60
120
180
240
300
360
420
480
540
0
5
10
15
20
25
30
V
DS
, Drain to Source Voltage (V)
I
D
,
Dr
a
i
n

Cu
r
r
e
n
t

(
A
)
V
GS
=15, 10V
Low Voltage Output Characteristics
Transfert Characteristics
T
J
=-55C
T
J
=25C
T
J
=125C
0
120
240
360
480
600
720
0
1
2
3
4
5
6
7
8
V
GS
, Gate to Source Voltage (V)
I
D
,
Dr
a
i
n
Cu
r
r
e
n
t
(
A
)
V
DS
> I
D
(on)xR
DS
(on)MAX
250s pulse test @ < 0.5 duty cycle
R
DS(on)
vs Drain Current
V
GS
=10V
V
GS
=20V
0.8
0.9
1
1.1
1.2
1.3
1.4
0
120
240
360
480
I
D
, Drain Current (A)
R
DS
(
o
n
)
D
r
ai
n

t
o
S
o
u
r
ce O
N
R
e
si
st
an
ce
Normalized to
V
GS
=10V @ 107.5A
0
30
60
90
120
150
180
210
240
25
50
75
100
125
150
T
C
, Case Temperature (C)
I
D
,
DC

D
r
a
i
n
Cu
r
r
e
n
t

(
A
)
DC Drain Current vs Case Temperature
APTM100UM45D-AlN
A
P
T
M
100U
M
45D
-
A
l
N
R
e
v 0 J
u
l
y, 2004
APT website http://www.advancedpower.com
5 6
0.85
0.90
0.95
1.00
1.05
1.10
1.15
-50 -25
0
25 50 75 100 125 150
T
J
, Junction Temperature (C)
BV
DS
S
,
D
r
ai
n

t
o
S
o
u
r
ce
B
r
eak
d
o
w
n
V
o
l
t
ag
e (
N
o
r
m
a
l
i
z
e
d
)
Breakdown Voltage vs Temperature
ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
-50 -25
0
25 50 75 100 125 150
T
J
, Junction Temperature (C)
R
DS
(
o
n
)
,

D
r
a
i
n
t
o
S
o
u
r
ce O
N

r
esi
st
an
ce
(
N
or
m
a
l
i
z
e
d)
V
GS
=10V
I
D
=107.5A
Threshold Voltage vs Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25
0
25 50 75 100 125 150
T
C
, Case Temperature (C)
V
GS
(
T
H
)
,
Th
r
e
s
hol
d
V
o
l
t
a
g
e
(N
o
r
ma
l
i
z
e
d
)
Maximum Safe Operating Area
10ms
1ms
100s
1
10
100
1000
1
10
100
1000
V
DS
, Drain to Source Voltage (V)
I
D
,
Dr
a
i
n

Cu
r
r
e
n
t
(
A
)
limited by R
DS
on
Single pulse
T
J
=150C
Ciss
Crss
Coss
100
1000
10000
100000
0
10
20
30
40
50
V
DS
, Drain to Source Voltage (V)
C
,
C
a
p
aci
t
a
n
ce (
p
F
)
Capacitance vs Drain to Source Voltage
V
DS
=200V
V
DS
=500V
V
DS
=800V
0
2
4
6
8
10
12
14
0
350
700 1050 1400 1750 2100
Gate Charge (nC)
V
GS
,
G
a
t
e

t
o
S
o
u
r
ce V
o
l
t
ag
e
(
V
)
Gate Charge vs Gate to Source Voltage
I
D
=215A
T
J
=25C
APTM100UM45D-AlN
A
P
T
M
100U
M
45D
-
A
l
N
R
e
v 0 J
u
l
y, 2004
APT website http://www.advancedpower.com
6 6
Delay Times vs Current
t
d(on)
t
d(off)
0
30
60
90
120
150
80 120 160 200 240 280 320 360 400
I
D
, Drain Current (A)
t
d(o
n
)
a
nd t
d(
off
)
(n
s
)
V
DS
=670V
R
G
=0.5
T
J
=125C
L=100H
Rise and Fall times vs Current
t
r
t
f
0
20
40
60
80
100
80 120 160 200 240 280 320 360 400
I
D
, Drain Current (A)
t
r
an
d
t
f
(n
s
)
V
DS
=670V
R
G
=0.5
T
J
=125C
L=100H
Switching Energy vs Current
E
on
E
off
0
4
8
12
16
20
24
80 120 160 200 240 280 320 360 400
I
D
, Drain Current (A)
S
w
i
t
ch
i
n
g
E
n
er
g
y

(
m
J)
V
DS
=670V
R
G
=0.5
T
J
=125C
L=100H
E
on
E
off
0
6
12
18
24
30
36
0
1
2
3
4
5
6
Gate Resistance (Ohms)
S
w
it
c
h
in
g
E
n
e
r
g
y
(
m
J
)
Switching Energy vs Gate Resistance
V
DS
=670V
I
D
=215A
T
J
=125C
L=100H
Hard
switching
ZCS
0
50
100
150
200
250
300
20
50
80
110
140
170
200
I
D
, Drain Current (A)
F
r
eq
u
e
n
cy (
k
H
z
)
Operating Frequency vs Drain Current
V
DS
=670V
D=50%
R
G
=0.5
T
J
=125C
T
C
=75C
T
J
=25C
T
J
=150C
1
10
100
1000
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
V
SD
, Source to Drain Voltage (V)
I
DR
,
R
ever
se D
r
ai
n

C
u
r
r
e
n
t
(
A
)
Source to Drain Diode Forward Voltage


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APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
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