ChipFind - документация

Электронный компонент: APTGT75TA60P

Скачать:  PDF   ZIP
APTGT75TA60P
A
P
T
G
T
7
5
T
A
60P
R
e
v 0, M
a
y, 2005
APT website http://www.advancedpower.com
1 - 5




Absolute maximum ratings
Symbol Parameter
Max
ratings
Unit
V
CES
Collector - Emitter Breakdown Voltage
600
V
T
C
= 25C
100
I
C
Continuous
Collector
Current
T
C
= 80C
75
I
CM
Pulsed Collector Current
T
C
= 25C
140
A
V
GE
Gate Emitter Voltage
20
V
P
D
Maximum Power Dissipation
T
C
= 25C
250 W
RBSOA Reverse Bias Safe Operating Area
T
J
= 150C
150A @ 550V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
VBUS1
VBUS2
VBUS3
W
E6
0/VBUS3
V
G6
E5
0/VBUS1
G2
E1
E2
0/VBUS2
U
E3
E4
G4
G1
G3
G5










G5
G6
E6
E5
G3
VBUS 2
VBUS 3
G4
E4
W
V
E3
0/VBUS 3
0/VBUS 2
G1
VBUS 1
U
E2
G2
0/VBUS 1
E1
V
CES
= 600V
I
C
= 75A @ Tc = 80C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Trench + Field Stop IGBT
Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
-
Symmetrical design
-
Lead frames for power connections
High level of integration
Benefits
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Very low (12mm) profile
Each leg can be easily paralleled to achieve a phase
leg of three times the current capability
Module can be configured as a three phase bridge
Module can be configured as a boost followed by a
full bridge
Triple phase leg
Trench + Field Stop IGBT
Power Module
APTGT75TA60P
A
P
T
G
T
7
5
T
A
60P
R
e
v 0, M
a
y, 2005
APT website http://www.advancedpower.com
2 - 5
All ratings @ T
j
= 25C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
I
CES
Zero Gate Voltage Collector Current
V
GE
= 0V, V
CE
= 600V
250 A
T
j
= 25C
1.5
1.9
V
CE(sat)
Collector Emitter Saturation Voltage
V
GE
=15V
I
C
= 75A
T
j
= 150C
1.7
V
V
GE(th)
Gate
Threshold
Voltage
V
GE
= V
CE
, I
C
= 600A
5.0
5.8
6.5
V
I
GES
Gate Emitter Leakage Current
V
GE
= 20V, V
CE
= 0V
600
nA

Dynamic Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
C
ies
Input
Capacitance
4620
C
oes
Output
Capacitance
300
C
res
Reverse Transfer Capacitance
V
GE
= 0V
V
CE
= 25V
f = 1MHz
140
pF
T
d(on)
Turn-on
Delay
Time
110
T
r
Rise
Time
45
T
d(off)
Turn-off Delay Time
200
T
f
Fall Time
Inductive Switching (25C)
V
GE
= 15V
V
Bus
= 300V
I
C
= 75A
R
G
= 12
40
ns
T
d(on)
Turn-on
Delay
Time
120
T
r
Rise
Time
50
T
d(off)
Turn-off Delay Time
250
T
f
Fall
Time
60
ns
E
on
Turn-on Switching Energy
1.3
E
off
Turn-off Switching Energy
Inductive Switching (150C)
V
GE
= 15V
V
Bus
= 300V
I
C
= 75A
R
G
= 12
2.6
mJ

Reverse diode ratings and characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
V
RRM
Maximum Peak Repetitive Reverse Voltage
600
V
T
j
= 25C
250
I
RM
Maximum Reverse Leakage Current
V
R
=600V
T
j
= 150C
500
A
I
F(A V)
Maximum Average Forward Current
50% duty cycle
Tc = 80C
75
A
T
j
= 25C
1.6
2
V
F
Diode Forward Voltage
I
F
= 75A
V
GE
= 0V
T
j
= 150C
1.5
V
T
j
= 25C
125
t
rr
Reverse Recovery Time
T
j
= 150C
220
ns
T
j
= 25C
3.6
Q
rr
Reverse Recovery Charge
I
F
= 75A
V
R
= 300V
di/dt =2000A/s
T
j
= 150C
7.6
C
APTGT75TA60P
A
P
T
G
T
7
5
T
A
60P
R
e
v 0, M
a
y, 2005
APT website http://www.advancedpower.com
3 - 5
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
0.60
R
thJC
Junction
to
Case
Diode
0.98
C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500 V
T
J
Operating junction temperature range
-40
175
T
STG
Storage Temperature Range
-40
125
T
C
Operating Case Temperature
-40
100
C
Torque Mounting torque
To heatsink
M6
3
5
N.m
Wt Package
Weight
250 g
Package outline
(dimensions in mm)
5 places (3:1)
APTGT75TA60P
A
P
T
G
T
7
5
T
A
60P
R
e
v 0, M
a
y, 2005
APT website http://www.advancedpower.com
4 - 5
Typical Performance Curve
Output Characteristics (V
GE
=15V)
T
J
=25C
T
J
=25C
T
J
=125C
T
J
=150C
0
25
50
75
100
125
150
0
0.5
1
1.5
2
2.5
3
V
CE
(V)
I
C
(A
)
Output Characteristics
V
GE
=15V
V
GE
=13V
V
GE
=19V
V
GE
=9V
0
25
50
75
100
125
150
0
0.5
1
1.5
2
2.5
3
3.5
V
CE
(V)
I
C
(A
)
T
J
= 150C
Transfert Characteristics
T
J
=25C
T
J
=25C
T
J
=125C
T
J
=150C
0
25
50
75
100
125
150
5
6
7
8
9
10
11
12
V
GE
(V)
I
C
(A
)
Energy losses vs Collector Current
Eon
Eon
Eoff
Er
0
1
2
3
4
5
0
25
50
75
100
125
150
I
C
(A)
E (
m
J
)
V
CE
= 300V
V
GE
= 15V
R
G
= 12
T
J
= 150C
Eon
Eon
Eoff
Eoff
Er
0
2
4
6
8
10
0
10
20
30
40
50
60
70
80
Gate Resistance (ohms)
E (
m
J
)
V
CE
= 300V
V
GE
=15V
I
C
= 75A
T
J
= 150C
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
0
25
50
75
100
125
150
175
0
100 200 300 400 500 600 700
V
CE
(V)
I
C
(A
)
V
GE
=15V
T
J
=150C
R
G
=12
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
T
h
er
m
a
l
I
m
p
e
d
a
n
ce (

C
/
W
)
IGBT
APTGT75TA60P
A
P
T
G
T
7
5
T
A
60P
R
e
v 0, M
a
y, 2005
APT website http://www.advancedpower.com
5 - 5
Forward Characteristic of diode
T
J
=25C
T
J
=125C
T
J
=150C
0
25
50
75
100
125
150
0
0.4
0.8
1.2
1.6
2
2.4
V
F
(V)
I
C
(A
)
Hard
switching
ZCS
ZVS
0
20
40
60
80
100
120
0
20
40
60
80
100
I
C
(A)
Fm
a
x
,
O
p
e
r
a
t
i
n
g F
r
e
q
ue
nc
y
(
k
H
z
)
V
CE
=300V
D=50%
R
G
=12
T
J
=150C
T
c
=85C
Operating Frequency vs Collector Current
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.2
0.4
0.6
0.8
1
1.2
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
T
h
e
r
m
a
l
I
m
pe
da
n
c
e
(

C
/
W
)
Diode


















APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.