APTGT75SK120D1
A
P
T
G
T
7
5
S
K
1
2
0
D
1
R
e
v
0
J
a
n
u
a
r
y
,
2
0
0
4
APT website http://www.advancedpower.com
1 - 3
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
V
CES
Collector - Emitter Breakdown Voltage
1200
V
T
C
= 25C
110
I
C
Continuous Collector Current
T
C
= 80C
75
I
CM
Pulsed Collector Current
T
C
= 25C
175
A
V
GE
Gate Emitter Voltage
20
V
P
D
Maximum Power Dissipation
T
C
= 25C
357
W
SCSOA Short Circuit Safe Operating Area
T
j
= 125C
300A@900V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
2
1
5
Q1
3
4
6
7
5
4
3
2
1
V
CES
= 1200V
I
C
= 75A @ Tc = 80C
Application
AC and DC motor control
Switched Mode Power Supplies
Features
Trench + Field Stop IGBT
Technology
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 20 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Low stray inductance
-
M5 power connectors
High level of integration
Benefits
Outstanding performance at high frequency
operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Buck Chopper
Trench IGBT
Power Module
APTGT75SK120D1
A
P
T
G
T
7
5
S
K
1
2
0
D
1
R
e
v
0
J
a
n
u
a
r
y
,
2
0
0
4
APT website http://www.advancedpower.com
2 - 3
All ratings @ T
j
= 25C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
BV
CES
Collector - Emitter Breakdown Voltage
V
GE
= 0V, I
C
= 3mA
1200
V
I
CES
Zero Gate Voltage Collector Current
V
GE
= 0V, V
CE
= 1200V
4
mA
T
j
= 25C
1.7
2.1
V
CE(on)
Collector Emitter on Voltage
V
GE
= 15V
I
C
= 75A
T
j
= 125C
2.0
V
V
GE(th)
Gate Threshold Voltage
V
GE
= V
CE
, I
C
= 3mA
5.0
5.8
6.5
V
I
GES
Gate Emitter Leakage Current
V
GE
= 20V, V
CE
= 0V
300
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
C
ies
Input Capacitance
5345
C
oes
Output Capacitance
280
C
res
Reverse Transfer Capacitance
V
GE
= 0V
V
CE
= 25V
f = 1MHz
242
nF
T
d(on)
Turn-on Delay Time
280
T
r
Rise Time
90
T
d(off)
Turn-off Delay Time
550
T
f
Fall Time
Inductive Switching (25C)
V
GE
= 15V
V
Bus
= 600V
I
C
= 75A
R
G
= 4.7
125
ns
T
d(on)
Turn-on Delay Time
290
T
r
Rise Time
100
T
d(off)
Turn-off Delay Time
650
T
f
Fall Time
Inductive Switching (125C)
V
GE
= 15V
V
Bus
= 600V
I
C
= 75A
R
G
= 4.7
180
ns
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
T
j
= 25C
1.6
2.1
V
F
Diode Forward Voltage
I
F
= 75A
V
GE
= 0V
T
j
= 125C
1.6
V
E
rec
Reverse Recovery Energy
I
F
= 75A
V
R
= 600V
di/dt =600A/s
T
j
= 125C
6
mJ
T
j
= 25C
7
Q
rr
Reverse Recovery Charge
I
F
= 75A
V
R
= 600V
di/dt =600A/s T
j
= 125C
14
C
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
0.35
R
thJC
Junction to Case
Diode
0.58
C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
2500
V
T
J
Operating junction temperature range
-40
150
T
STG
Storage Temperature Range
-40
125
T
C
Operating Case Temperature
-40
125
C
For terminals
M5
2
3.5
Torque Mounting torque
To Heatsink
M6
3
5
N.m
Wt
Package Weight
180
g
APTGT75SK120D1
A
P
T
G
T
7
5
S
K
1
2
0
D
1
R
e
v
0
J
a
n
u
a
r
y
,
2
0
0
4
APT website http://www.advancedpower.com
3 - 3
Package outline
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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