APTGT50X170RTP3
APTGT50X170BTP3
A
P
T
G
T
5
0
X
1
7
0
B
T
P
3
R
e
v
1
,
F
e
b
r
u
a
r
y
,
2
0
0
4
APT website http://www.advancedpower.com
1 - 4
All ratings @ T
j
= 25C unless otherwise specified
1. Absolute maximum ratings
Diode rectifier
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
V
RRM
Repetitive Peak Reverse Voltage
1600
V
I
D
DC Forward Current
T
C
= 80C
80
T
j
= 25C
500
I
FSM
Surge Forward Current
t
p
= 10ms
T
j
= 150C
400
A
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APTGT50X170RTP3: Without Brake (Pin 7 & 14 not connected)
9
8
7
4
5
6
22
23
24
1
2
3
17
18
19
20
10
11
12
14 13
16 15
21
V
CES
= 1700V
I
C
= 50A @ Tc = 80C
Application
AC Motor control
Features
Trench + Field Stop IGBT
Technology
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 20 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Low stray inductance
High level of integration
Kelvin emitter for easy drive
Low stray inductance
Internal thermistor for temperature monitoring
Benefits
Low conduction losses
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
Input rectifier bridge + Brake
+ 3 Phase Bridge
Trench IGBT
Power Module
APTGT50X170RTP3
APTGT50X170BTP3
A
P
T
G
T
5
0
X
1
7
0
B
T
P
3
R
e
v
1
,
F
e
b
r
u
a
r
y
,
2
0
0
4
APT website http://www.advancedpower.com
2 - 4
IGBT & Diode Brake
(only for APTGT50X170BTP3)
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
V
CES
Collector - Emitter Breakdown Voltage
1700
V
T
C
= 25C
70
I
C
Continuous Collector Current
T
C
= 80C
50
I
CM
Pulsed Collector Current
T
C
= 25C
100
A
V
GE
Gate Emitter Voltage
20
V
P
D
Maximum Power Dissipation
T
C
= 25C
310
W
I
F
DC Forward Current
T
C
= 80C
50
A
IGBT & Diode Inverter
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
V
CES
Collector - Emitter Breakdown Voltage
1200
V
T
C
= 25C
70
I
C
Continuous Collector Current
T
C
= 80C
50
I
CM
Pulsed Collector Current
T
C
= 25C
100
A
V
GE
Gate Emitter Voltage
20
V
P
D
Maximum Power Dissipation
T
C
= 25C
310
W
RBSOA Reverse Bias Save Operating Area
T
j
= 125C
100A @ 1700V
I
F
DC Forward Current
T
C
= 80C
50
I
FRM
Repetitive Peak Forward Current
t
p
= 1ms
100
A
2. Electrical Characteristics
Diodes Rectifier
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
I
R
Reverse Current
V
R
= 1600V
T
j
= 150C
3
mA
V
F
Forward Voltage
I
F
= 50A
T
j
= 150C
1.0
V
R
thJC
Junction to Case
0.65
C/W
IGBT Brake & Diode
(only for APTGT50X170BTP3)
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ
Max Unit
I
CES
Zero Gate Voltage Collector Current
V
GE
= 0V, V
CE
= 1700V
6
mA
T
j
= 25C
2.0
2.4
V
CE(on)
Collector Emitter on Voltage
V
GE
= 15V
I
C
= 50A
T
j
= 125C
2.4
V
V
GE(th)
Gate Threshold Voltage
V
GE
= V
CE
, I
C
= 2.5mA
5.0
5.8
6.5
V
I
GES
Gate Emitter Leakage Current
V
GE
= 20V, V
CE
= 0V
600
nA
C
ies
Input Capacitance
4400
C
res
Reverse Transfer Capacitance
V
GE
= 0V,V
CE
= 25V
f = 1MHz
150
pF
T
j
= 25C
1.8
2.2
V
F
Forward Voltage
V
GE
= 0V
I
F
= 50A
T
j
= 125C
1.9
V
IGBT
0.4
R
thJC
Junction to Case
Diode
0.7
C/W
APTGT50X170RTP3
APTGT50X170BTP3
A
P
T
G
T
5
0
X
1
7
0
B
T
P
3
R
e
v
1
,
F
e
b
r
u
a
r
y
,
2
0
0
4
APT website http://www.advancedpower.com
3 - 4
IGBT & Diode Inverter
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
BV
CES
Collector - Emitter Breakdown Voltage
V
GE
= 0V, I
C
= 2.5mA
1700
V
I
CES
Zero Gate Voltage Collector Current
V
GE
= 0V, V
CE
= 1200V
5
mA
T
j
= 25C
2.0
2.4
V
CE(on)
Collector Emitter on Voltage
V
GE
=15V
I
C
= 50A
T
j
= 125C
2.4
V
V
GE(th)
Gate Threshold Voltage
V
GE
= V
CE
, I
C
= 2.5mA
5.0
5.8
6.5
V
I
GES
Gate Emitter Leakage Current
V
GE
= 20V, V
CE
= 0V
600
nA
C
ies
Input Capacitance
4400
C
rss
Reverse Transfer Capacitance
V
GE
= 0V ;V
CE
= 25V
f = 1MHz
150
pF
T
d(on)
Turn-on Delay Time
200
T
r
Rise Time
90
T
d(off)
Turn-off Delay Time
720
T
f
Fall Time
Inductive Switching (25C)
V
GE
= 15V
V
Bus
= 900V
I
C
= 50A
R
G
= 22
90
ns
T
d(on)
Turn-on Delay Time
220
T
r
Rise Time
90
T
d(off)
Turn-off Delay Time
820
T
f
Fall Time
110
ns
E
off
Turn off Energy
Inductive Switching (125C)
V
GE
= 15V
V
Bus
= 900V
I
C
= 50A
R
G
= 22
22
mJ
T
j
= 25C
1.8
2.2
V
F
Forward Voltage
V
GE
= 0V
I
F
= 50A
T
j
= 125C
1.9
V
T
j
= 25C
19
Q
rr
Reverse Recovery Charge
I
F
= 50A
V
R
= 900V
di/dt=990A/s T
j
= 125C
30
C
IGBT
0.40
R
thJC
Junction to Case
Diode
0.70
C/W
Temperature sensor NTC
Symbol Characteristic
Min Typ Max Unit
R
25
Resistance @ 25C
5
k
B
25/50
T
25
= 298.16 K
3375
K
-
=
T
T
B
R
R
T
1
1
exp
25
50
/
25
25
3. Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
2500
V
T
J
Operating junction temperature range
-40
150
T
STG
Storage Temperature Range
-40
125
T
C
Operating Case Temperature
-40
125
C
Torque Mounting torque
To Heatsink
M5
3.3
N.m
Wt
Package Weight
300
g
T: Thermistor temperature
R
T
: Thermistor value at T
APTGT50X170RTP3
APTGT50X170BTP3
A
P
T
G
T
5
0
X
1
7
0
B
T
P
3
R
e
v
1
,
F
e
b
r
u
a
r
y
,
2
0
0
4
APT website http://www.advancedpower.com
4 - 4
4. Package outline
PIN 24
PIN 1
ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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