APTGT50A120D1
A
P
T
G
T
5
0
A
1
2
0
D
1
R
e
v
0
,
J
a
n
u
a
r
y
2
0
0
4
APT website http://www.advancedpower.com
1 - 3
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
V
CES
Collector - Emitter Breakdown Voltage
1200
V
T
C
= 25C
75
I
C
Continuous Collector Current
T
C
= 80C
50
I
CM
Pulsed Collector Current
T
C
= 25C
100
A
V
GE
Gate Emitter Voltage
20
V
P
D
Maximum Power Dissipation
T
C
= 25C
270
W
RBSOA Reverse Bias Save Operating Area
T
J
= 125C
100A @ 1100V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
2
1
3
5
Q2
7
6
Q1
4
6
7
5
4
3
2
1
V
CES
= 1200V
I
C
= 50A @ Tc = 80C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Trench + Field Stop IGBT
Technology
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 20 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Low stray inductance
-
M5 power connectors
High level of integration
Benefits
Outstanding performance at high frequency
operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Phase Leg
Trench IGBT
Power Module
APTGT50A120D1
A
P
T
G
T
5
0
A
1
2
0
D
1
R
e
v
0
,
J
a
n
u
a
r
y
2
0
0
4
APT website http://www.advancedpower.com
2 - 3
All ratings @ T
j
= 25C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
BV
CES
Collector - Emitter Breakdown Voltage
V
GE
= 0V, I
C
= 2mA
1200
V
I
CES
Zero Gate Voltage Collector Current
V
GE
= 0V, V
CE
= 1200V
5
mA
T
j
= 25C
1.4
1.7
2.1
V
CE(on)
Collector Emitter on Voltage
V
GE
=15V
I
C
= 50A
T
j
= 125C
2.0
V
V
GE(th)
Gate Threshold Voltage
V
GE
= V
CE
, I
C
= 2mA
5.0
5.8
6.5
V
I
GES
Gate Emitter Leakage Current
V
GE
= 20V, V
CE
= 0V
400
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
C
ies
Input Capacitance
3600
C
rss
Reverse Transfer Capacitance
V
GE
= 0V,V
CE
= 25V
f = 1MHz
160
pF
T
d(on)
Turn-on Delay Time
150
T
r
Rise Time
90
T
d(off)
Turn-off Delay Time
550
T
f
Fall Time
Inductive Switching (25C)
V
GE
= 15V
V
Bus
= 600V
I
C
= 50A
R
G
= 18
130
ns
T
d(on)
Turn-on Delay Time
180
T
r
Rise Time
100
T
d(off)
Turn-off Delay Time
650
T
f
Fall Time
180
ns
E
off
Turn off Energy
Inductive Switching (125C)
V
GE
= 15V
V
Bus
= 600V
I
C
= 50A
R
G
= 18
6.5
mJ
Reverse diode ratings and characteristics
T
j
= 25C
1.6
2.2
V
F
Forward Voltage
V
GE
= 0V
I
F
= 50A
T
j
= 125C
1.6
V
E
rec
Reverse Recovery Energy
I
F
= 50A
V
R
= 600V
di/dt =990A/s
T
j
= 125C
4
mJ
T
j
= 25C
5.2
Q
rr
Reverse Recovery Charge
I
F
= 50A
V
R
= 600V
di/dt=990A/s T
j
= 125C
9.4
C
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
0.45
R
thJC
Junction to Case
Diode
0.75
C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
2500
V
T
J
Operating junction temperature range
-40
150
T
STG
Storage Temperature Range
-40
125
T
C
Operating Case Temperature
-40
125
C
For terminals
M5
2
3.5
Torque Mounting torque
To Heatsink
M6
3
5
N.m
Wt
Package Weight
180
g
APTGT50A120D1
A
P
T
G
T
5
0
A
1
2
0
D
1
R
e
v
0
,
J
a
n
u
a
r
y
2
0
0
4
APT website http://www.advancedpower.com
3 - 3
Package outline
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
PDF 
ZIP