APTGT300SK60
A
P
T
G
T
300
S
K
60 R
e
v 0 M
a
y, 2005
APT website http://www.advancedpower.com
1 - 5
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Q1
G1
0/VBUS
OUT
E1
CR2
VBUS
VBUS
OUT
0/VBUS
E1
G1
Symbol Parameter
Max ratings
Unit
V
CES
Collector - Emitter Breakdown Voltage
600
V
T
C
= 25C
430
I
C
Continuous
Collector
Current
T
C
= 80C
300
I
CM
Pulsed Collector Current
T
C
= 25C
500
A
V
GE
Gate Emitter Voltage
20
V
P
D
Maximum Power Dissipation
T
C
= 25C
1150 W
RBSOA Reverse Bias Safe Operating Area
T
j
= 150C
600A @ 550V
V
CES
= 600V
I
C
= 300A @ Tc = 80C
Application
AC and DC motor control
Switched Mode Power Supplies
Features
Trench + Field Stop IGBT
Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
-
Symmetrical design
-
M5 power connectors
High level of integration
Benefits
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
Buck chopper
Trench + Field Stop IGBT
Power Module
APTGT300SK60
A
P
T
G
T
300
S
K
60 R
e
v 0 M
a
y, 2005
APT website http://www.advancedpower.com
2 - 5
All ratings @ T
j
= 25C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
I
CES
Zero Gate Voltage Collector Current
V
GE
= 0V, V
CE
= 600V
350
A
T
j
= 25C
1.4 1.8
V
CE(sat)
Collector Emitter Saturation Voltage
V
GE
=15V
I
C
= 300A
T
j
= 150C
1.5
V
V
GE(th)
Gate
Threshold
Voltage
V
GE
= V
CE
, I
C
= 1.5 mA
5.0
5.8
6.5
V
I
GES
Gate Emitter Leakage Current
V
GE
= 20V, V
CE
= 0V
500
nA
Dynamic Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
C
ies
Input
Capacitance
24
C
oes
Output
Capacitance
1.5
C
res
Reverse Transfer Capacitance
V
GE
= 0V
V
CE
= 25V
f = 1MHz
0.75
nF
T
d(on)
Turn-on
Delay
Time
115
T
r
Rise Time
45
T
d(off)
Turn-off Delay Time
200
T
f
Fall Time
Inductive Switching (25C)
V
GE
= 15V
V
Bus
= 300V
I
C
= 300A
R
G
= 3.3
55
ns
T
d(on)
Turn-on
Delay
Time
120
T
r
Rise Time
50
T
d(off)
Turn-off Delay Time
250
T
f
Fall Time
70
ns
E
on
Turn on Energy
5.2
E
off
Turn off Energy
Inductive Switching (150C)
V
GE
= 15V
V
Bus
= 300V
I
C
= 300A
R
G
= 3.3
10.5
mJ
Chopper diode ratings and characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
V
RRM
Maximum Peak Repetitive Reverse Voltage
600
V
T
j
= 25C
350
I
RM
Maximum Reverse Leakage Current
V
R
=600V
T
j
= 150C
600
A
I
F(A V)
Maximum Average Forward Current
50% duty cycle
Tc = 80C
300
A
T
j
= 25C
1.5
1.9
V
F
Diode Forward Voltage
I
F
= 300A
V
GE
= 0V
T
j
= 150C
1.4
V
T
j
= 25C
120
t
rr
Reverse Recovery Time
T
j
= 150C
210
ns
T
j
= 25C
13.5
Q
rr
Reverse Recovery Charge
I
F
= 300A
V
R
= 300V
di/dt =3100A/s
T
j
= 150C
28.5
C
APTGT300SK60
A
P
T
G
T
300
S
K
60 R
e
v 0 M
a
y, 2005
APT website http://www.advancedpower.com
3 - 5
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
0.13
R
thJC
Junction
to
Case
Diode
0.21
C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500 V
T
J
Operating junction temperature range
-40
175
T
STG
Storage Temperature Range
-40
125
T
C
Operating Case Temperature
-40
100
C
To heatsink
M6
3
5
Torque Mounting
torque
For terminals
M5
2
3.5
N.m
Wt Package
Weight
280 g
Package outline
(dimensions in mm)
APTGT300SK60
A
P
T
G
T
300
S
K
60 R
e
v 0 M
a
y, 2005
APT website http://www.advancedpower.com
4 - 5
Typical Performance Curve
Output Characteristics (V
GE
=15V)
T
J
=25C
T
J
=25C
T
J
=125C
T
J
=150C
0
100
200
300
400
500
600
0
0.5
1
1.5
2
2.5
V
CE
(V)
I
C
(A
)
Output Characteristics
V
GE
=15V
V
GE
=13V
V
GE
=19V
V
GE
=9V
0
100
200
300
400
500
600
0
0.5
1
1.5
2
2.5
3
3.5
V
CE
(V)
I
C
(A
)
T
J
= 150C
Transfert Characteristics
T
J
=25C
T
J
=25C
T
J
=125C
T
J
=150C
0
100
200
300
400
500
600
5
6
7
8
9
10
11
V
GE
(V)
I
C
(A
)
Energy losses vs Collector Current
Eon
Eoff
Er
0
2.5
5
7.5
10
12.5
15
17.5
20
0
100
200
300
400
500
600
I
C
(A)
E (
m
J
)
V
CE
= 300V
V
GE
= 15V
R
G
= 3.3
T
J
= 150C
Eon
Eon
Eoff
Eoff
Er
0
10
20
30
40
0
5
10
15
20
25
Gate Resistance (ohms)
E (
m
J
)
V
CE
= 300V
V
GE
=15V
I
C
= 300A
T
J
= 150C
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
0
100
200
300
400
500
600
700
0
100 200 300 400 500 600 700
V
CE
(V)
I
C
(A
)
V
GE
=15V
T
J
=150C
R
G
=3.3
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
T
h
e
r
m
a
l Im
p
e
d
a
n
c
e
(
C
/
W
)
IGBT
APTGT300SK60
A
P
T
G
T
300
S
K
60 R
e
v 0 M
a
y, 2005
APT website http://www.advancedpower.com
5 - 5
Forward Characteristic of diode
T
J
=25C
T
J
=125C
T
J
=150C
0
100
200
300
400
500
600
0
0.4
0.8
1.2
1.6
2
V
F
(V)
I
C
(A
)
Hard
switching
ZCS
ZVS
0
20
40
60
80
100
120
0
100
200
300
400
500
I
C
(A)
F
m
a
x
,
O
p
e
r
a
t
i
n
g F
r
e
q
ue
nc
y
(
k
H
z
)
V
CE
=300V
D=50%
R
G
=3.3
T
J
=150C
T
c
=85C
Operating Frequency vs Collector Current
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
Th
e
r
m
a
l
I
m
pe
da
n
c
e
(
C
/
W
)
Diode
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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