APTGT300DA170
A
P
T
G
T
300
D
A
170
R
e
v 0 M
a
y, 2005
APT website http://www.advancedpower.com
1 - 5
Absolute maximum ratings
Symbol Parameter
Max
ratings
Unit
V
CES
Collector - Emitter Breakdown Voltage
1700
V
T
C
= 25C
400
I
C
Continuous
Collector
Current
T
C
= 80C
300
I
CM
Pulsed Collector Current
T
C
= 25C
600
A
V
GE
Gate Emitter Voltage
20
V
P
D
Maximum Power Dissipation
T
C
= 25C
1660 W
RBSOA Reverse Bias Safe Operating Area
T
j
= 125C
600A @ 1600V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
G2
E2
Q2
0/VBUS
OUT
CR1
VBUS
VBUS
OUT
0/VBUS
G2
E2
V
CES
= 1700V
I
C
= 300A @ Tc = 80C
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Features
Trench + Field Stop IGBT
Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
-
Symmetrical design
-
M5 power connectors
High level of integration
Benefits
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
Boost chopper
Trench + Field Stop IGBT
Power Module
APTGT300DA170
A
P
T
G
T
300
D
A
170
R
e
v 0 M
a
y, 2005
APT website http://www.advancedpower.com
2 - 5
All ratings @ T
j
= 25C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
I
CES
Zero Gate Voltage Collector Current
V
GE
= 0V, V
CE
= 1700V
750
A
T
j
= 25C
2.0 2.4
V
CE(sat)
Collector Emitter Saturation Voltage
V
GE
= 15V
I
C
= 300A
T
j
= 125C
2.4
V
V
GE(th)
Gate
Threshold
Voltage
V
GE
= V
CE
, I
C
= 5mA
5.0
5.8
6.5
V
I
GES
Gate Emitter Leakage Current
V
GE
= 20V, V
CE
= 0V
600
nA
Dynamic Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
C
ies
Input
Capacitance
26.5
C
oes
Output
Capacitance
1.1
C
res
Reverse Transfer Capacitance
V
GE
= 0V
V
CE
= 25V
f = 1MHz
0.88
nF
T
d(on)
Turn-on Delay Time
370
T
r
Rise Time
40
T
d(off)
Turn-off Delay Time
650
T
f
Fall Time
Inductive Switching (25C)
V
GE
= 15V
V
Bus
= 900V
I
C
= 300A
R
G
= 2.2
180
ns
T
d(on)
Turn-on
Delay
Time
400
T
r
Rise Time
50
T
d(off)
Turn-off Delay Time
800
T
f
Fall Time
300
ns
E
on
Turn-on Switching Energy
96
E
off
Turn-off Switching Energy
Inductive Switching (125C)
V
GE
= 15V
V
Bus
= 900V
I
C
= 300A
R
G
= 2.2
94
mJ
Chopper diode ratings and characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
V
RRM
Maximum Peak Repetitive Reverse Voltage
1700
V
T
j
= 25C
750
I
RM
Maximum Reverse Leakage Current
V
R
=1700V
T
j
= 125C
1000
A
I
F(A V)
Maximum Average Forward Current
50% duty cycle
Tc = 80C
300
A
T
j
= 25C
1.8
2.2
V
F
Diode Forward Voltage
I
F
= 300A
T
j
= 125C
1.9
V
T
j
= 25C
385
t
rr
Reverse Recovery Time
T
j
= 125C
490
ns
T
j
= 25C
80
Q
rr
Reverse Recovery Charge
I
F
= 300A
V
R
= 900V
di/dt =3200A/s
T
j
= 125C
128
C
APTGT300DA170
A
P
T
G
T
300
D
A
170
R
e
v 0 M
a
y, 2005
APT website http://www.advancedpower.com
3 - 5
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
0.075
R
thJC
Junction
to
Case
Diode
0.14
C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
3400 V
T
J
Operating junction temperature range
-40
150
T
STG
Storage Temperature Range
-40
125
T
C
Operating Case Temperature
-40
100
C
To heatsink
M6
3
5
Torque Mounting
torque
For terminals
M5
2
3.5
N.m
Wt Package
Weight
280 g
Package outline
(dimensions in mm)
APTGT300DA170
A
P
T
G
T
300
D
A
170
R
e
v 0 M
a
y, 2005
APT website http://www.advancedpower.com
4 - 5
Typical Performance Curve
Output Characteristics (V
GE
=15V)
T
J
=25C
T
J
=125C
0
100
200
300
400
500
600
0
1
2
3
4
V
CE
(V)
I
C
(A
)
Output Characteristics
V
GE
=15V
V
GE
=13V
V
GE
=20V
V
GE
=9V
0
100
200
300
400
500
600
0
1
2
3
4
5
V
CE
(V)
I
C
(A
)
T
J
= 125C
Transfert Characteristics
T
J
=25C
T
J
=125C
T
J
=125C
0
100
200
300
400
500
600
5
6
7
8
9
10
11
12
13
V
GE
(V)
I
C
(A
)
Energy losses vs Collector Current
Eon
Eoff
Er
0
40
80
120
160
200
240
0
100
200
300
400
500
600
I
C
(A)
E (
m
J
)
V
CE
= 900V
V
GE
= 15V
R
G
= 2.2
T
J
= 125C
Eon
Eoff
Er
0
40
80
120
160
200
240
0
3
6
9
12
15
Gate Resistance (ohms)
E (
m
J
)
V
CE
= 900V
V
GE
=15V
I
C
= 300A
T
J
= 125C
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
0
100
200
300
400
500
600
700
0
400
800
1200
1600
2000
V
CE
(V)
I
C
(A
)
V
GE
=15V
T
J
=125C
R
G
=2.2
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
T
h
er
m
a
l
I
m
p
e
d
a
n
ce (
C
/
W
)
IGBT
APTGT300DA170
A
P
T
G
T
300
D
A
170
R
e
v 0 M
a
y, 2005
APT website http://www.advancedpower.com
5 - 5
Forward Characteristic of diode
T
J
=25C
T
J
=125C
T
J
=125C
0
100
200
300
400
500
600
0
0.5
1
1.5
2
2.5
3
V
F
(V)
I
C
(A
)
hard
switching
ZCS
ZVS
0
5
10
15
20
0
80
160
240
320
400
480
I
C
(A)
F
m
ax, O
p
er
at
in
g
F
r
eq
u
e
n
cy (
k
H
z
)
V
CE
=900V
D=50%
R
G
=2.2
T
J
=125C
T
C
=75C
Operating Frequency vs Collector Current
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
The
r
m
a
l
I
m
p
e
da
nc
e
(C
/
W
)
Diode
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
PDF 
ZIP