APTGT20DSK60T3
A
P
T
G
T
2
0
D
S
K
60
T
3
R
e
v 0, M
a
y, 2005
APT website http://www.advancedpower.com
1 - 5
Absolute maximum ratings
Symbol Parameter
Max
ratings
Unit
V
CES
Collector - Emitter Breakdown Voltage
600
V
T
C
= 25C
32
I
C
Continuous
Collector
Current
T
C
= 80C
20
I
CM
Pulsed Collector Current
T
C
= 25C
40
A
V
GE
Gate Emitter Voltage
20
V
P
D
Maximum Power Dissipation
T
C
= 25C
62 W
RBSOA Reverse Bias Safe Operating Area
T
J
= 150C
40A @ 550V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
22
13 14
10
Q1
11
Q2
7
8
23
CR2
CR1
15
R1
29
30
31
32
16
18
19
16
15
18
20
23 22
13
11 12
14
8
7
29
30
28 27 26
3
32
31
10
19
2
25
4
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 ...
V
CES
= 600V
I
C
= 20A @ Tc = 80C
Application
AC and DC motor control
Switched Mode Power Supplies
Features
Trench + Field Stop IGBT
Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
- Symmetrical design
High level of integration
Internal thermistor for temperature monitoring
Benefits
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
Each leg can be easily paralleled to achieve a
single buck of twice the current capability.
Dual Buck chopper
Trench + Field Stop IGBT
Power Module
APTGT20DSK60T3
A
P
T
G
T
2
0
D
S
K
60
T
3
R
e
v 0, M
a
y, 2005
APT website http://www.advancedpower.com
2 - 5
All ratings @ T
j
= 25C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
I
CES
Zero Gate Voltage Collector Current
V
GE
= 0V, V
CE
= 600V
250 A
T
j
= 25C
1.5
1.9
V
CE(sat)
Collector Emitter Saturation Voltage
V
GE
=15V
I
C
= 20A
T
j
= 150C
1.7
V
V
GE(th)
Gate
Threshold
Voltage
V
GE
= V
CE
, I
C
= 300A
5.0
5.8
6.5
V
I
GES
Gate Emitter Leakage Current
V
GE
= 20V, V
CE
= 0V
300
nA
Dynamic Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
C
ies
Input
Capacitance
1100
C
oes
Output
Capacitance
70
C
res
Reverse Transfer Capacitance
V
GE
= 0V
V
CE
= 25V
f = 1MHz
35
pF
T
d(on)
Turn-on
Delay
Time
110
T
r
Rise
Time
45
T
d(off)
Turn-off Delay Time
200
T
f
Fall Time
Inductive Switching (25C)
V
GE
= 15V
V
Bus
= 300V
I
C
= 20A
R
G
= 18
40
ns
T
d(on)
Turn-on
Delay
Time
120
T
r
Rise
Time
50
T
d(off)
Turn-off Delay Time
250
T
f
Fall
Time
60
ns
E
on
Turn-on Switching Energy
0.35
E
off
Turn-off Switching Energy
Inductive Switching (150C)
V
GE
= 15V
V
Bus
= 300V
I
C
= 20A
R
G
= 18
0.7
mJ
Chopper diode ratings and characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
V
RRM
Maximum Peak Repetitive Reverse Voltage
600
V
T
j
= 25C
250
I
RM
Maximum Reverse Leakage Current
V
R
=600V
T
j
= 150C
500
A
I
F(A V)
Maximum Average Forward Current
50% duty cycle
Tc = 80C
20
A
T
j
= 25C
1.6
2
V
F
Diode Forward Voltage
I
F
= 20A
V
GE
= 0V
T
j
= 150C
1.5
V
T
j
= 25C
120
t
rr
Reverse Recovery Time
T
j
= 150C
210
ns
T
j
= 25C
1.1
Q
rr
Reverse Recovery Charge
I
F
= 20A
V
R
= 300V
di/dt =1600A/s
T
j
= 150C
2.3
C
APTGT20DSK60T3
A
P
T
G
T
2
0
D
S
K
60
T
3
R
e
v 0, M
a
y, 2005
APT website http://www.advancedpower.com
3 - 5
Temperature sensor NTC
(see application note APT0406 on www.advancedpower.com for more information).
Symbol Characteristic
Min Typ Max Unit
R
25
Resistance @ 25C
50
k
B
25/85
T
25
= 298.15 K
3952
K
-
=
T
T
B
R
R
T
1
1
exp
25
85
/
25
25
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT 2.4
R
thJC
Junction
to
Case
Diode
3.25
C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500 V
T
J
Operating junction temperature range
-40
175
T
STG
Storage Temperature Range
-40
125
T
C
Operating Case Temperature
-40
100
C
Torque Mounting torque
To heatsink
M4
1.5
4.7 N.m
Wt Package
Weight
110
g
Package outline
(dimensions in mm)
17
12
28
1
T: Thermistor temperature
R
T
: Thermistor value at T
APTGT20DSK60T3
A
P
T
G
T
2
0
D
S
K
60
T
3
R
e
v 0, M
a
y, 2005
APT website http://www.advancedpower.com
4 - 5
Typical Performance Curve
Output Characteristics (V
GE
=15V)
T
J
=25C
T
J
=25C
T
J
=125C
T
J
=150C
0
5
10
15
20
25
30
35
40
0
0.5
1
1.5
2
2.5
3
V
CE
(V)
I
C
(A
)
Output Characteristics
V
GE
=15V
V
GE
=13V
V
GE
=19V
V
GE
=9V
0
5
10
15
20
25
30
35
40
0
0.5
1
1.5
2
2.5
3
3.5
V
CE
(V)
I
C
(A
)
T
J
= 150C
Transfert Characteristics
T
J
=25C
T
J
=25C
T
J
=125C
T
J
=150C
0
5
10
15
20
25
30
35
40
5
6
7
8
9
10
11
12
V
GE
(V)
I
C
(A
)
Energy losses vs Collector Current
Eon
Eon
Eoff
Er
0
0.25
0.5
0.75
1
1.25
0
10
20
30
40
I
C
(A)
E (
m
J
)
V
CE
= 300V
V
GE
= 15V
R
G
= 18
T
J
= 150C
Eon
Eon
Eoff
Eoff
Er
0
0.5
1
1.5
2
2.5
10
30
50
70
90
110
Gate Resistance (ohms)
E (
m
J
)
V
CE
= 300V
V
GE
=15V
I
C
= 20A
T
J
= 150C
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
0
10
20
30
40
50
0
100 200 300
400
500
600
700
V
CE
(V)
I
C
(A
)
V
GE
=15V
T
J
=150C
R
G
=18
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.4
0.8
1.2
1.6
2
2.4
2.8
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
T
h
e
r
m
a
l Im
p
e
d
a
n
c
e
(
C
/
W
)
IGBT
APTGT20DSK60T3
A
P
T
G
T
2
0
D
S
K
60
T
3
R
e
v 0, M
a
y, 2005
APT website http://www.advancedpower.com
5 - 5
Forward Characteristic of diode
T
J
=25C
T
J
=125C
T
J
=150C
0
5
10
15
20
25
30
35
40
0
0.4
0.8
1.2
1.6
2
2.4
V
F
(V)
I
C
(A
)
Hard
switching
ZCS
ZVS
0
20
40
60
80
100
120
0
5
10
15
20
25
30
I
C
(A)
F
m
a
x
, O
p
er
at
in
g
F
r
eq
u
e
n
cy (
k
H
z
)
V
CE
=300V
D=50%
R
G
=18
T
J
=150C
T
c
=85C
Operating Frequency vs Collector Current
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.5
1
1.5
2
2.5
3
3.5
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
T
h
er
m
a
l Im
p
e
d
a
n
ce (
C
/
W
)
Diode
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
PDF 
ZIP