APTGT200U120D4
A
P
T
G
T
2
0
0
U
1
2
0
D
4
R
e
v
0
,
J
a
n
u
a
r
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2
0
0
4
APT website http://www.advancedpower.com
1 - 3
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
V
CES
Collector - Emitter Breakdown Voltage
1200
V
T
C
= 25C
300
I
C
Continuous Collector Current
T
C
= 80C
200
I
CM
Pulsed Collector Current
T
C
= 25C
400
A
V
GE
Gate Emitter Voltage
20
V
P
D
Maximum Power Dissipation
T
C
= 25C
1040
W
RBSOA Reverse Bias Save Operating Area
T
J
= 125C
400A @ 1100V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
3
5
2
1
5
3
4
1
2
V
CES
= 1200V
I
C
= 200A @ Tc = 80C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Trench + Field Stop IGBT
Technology
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 20 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Low stray inductance
-
M6 connectors for power
-
M4 connectors for signal
High level of integration
Benefits
Outstanding performance at high frequency
operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Single switch
Trench IGBT
Power Module
APTGT200U120D4
A
P
T
G
T
2
0
0
U
1
2
0
D
4
R
e
v
0
,
J
a
n
u
a
r
y
2
0
0
4
APT website http://www.advancedpower.com
2 - 3
All ratings @ T
j
= 25C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
BV
CES
Collector - Emitter Breakdown Voltage
V
GE
= 0V, I
C
= 8mA
1200
V
I
CES
Zero Gate Voltage Collector Current
V
GE
= 0V, V
CE
= 1200V
20
mA
T
j
= 25C
1.4
1.7
2.1
V
CE(on)
Collector Emitter on Voltage
V
GE
=15V
I
C
= 200A
T
j
= 125C
2.0
V
V
GE(th)
Gate Threshold Voltage
V
GE
= V
CE
, I
C
= 8mA
5.0
5.8
6.5
V
I
GES
Gate Emitter Leakage Current
V
GE
= 20V, V
CE
= 0V
1200
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
C
ies
Input Capacitance
14.4
C
rss
Reverse Transfer Capacitance
V
GE
= 0V,V
CE
= 25V
f = 1MHz
0.65
nF
T
d(on)
Turn-on Delay Time
150
T
r
Rise Time
90
T
d(off)
Turn-off Delay Time
550
T
f
Fall Time
Inductive Switching (25C)
V
GE
= 15V
V
Bus
= 600V
I
C
= 200A
R
G
= 4.7
130
ns
T
d(on)
Turn-on Delay Time
180
T
r
Rise Time
100
T
d(off)
Turn-off Delay Time
650
T
f
Fall Time
180
ns
E
off
Turn off Energy
Inductive Switching (125C)
V
GE
= 15V
V
Bus
= 600V
I
C
= 200A
R
G
= 4.7
26
mJ
Reverse diode ratings and characteristics
T
j
= 25C
1.6
2.2
V
F
Forward Voltage
V
GE
= 0V
I
F
= 200A
T
j
= 125C
1.6
V
E
rec
Reverse Recovery Energy
I
F
= 200A
V
R
= 600V
di/dt =990A/s
T
j
= 125C
16
mJ
T
j
= 25C
20.8
Q
rr
Reverse Recovery Charge
I
F
= 200A
V
R
= 600V
di/dt=990A/s T
j
= 125C
38
C
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
0.12
R
thJC
Junction to Case
Diode
0.19
C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
2500
V
T
J
Operating junction temperature range
-40
150
T
STG
Storage Temperature Range
-40
125
T
C
Operating Case Temperature
-40
125
C
M6
3
5
Torque Mounting torque
M4
1
2
N.m
Wt
Package Weight
420
g
APTGT200U120D4
A
P
T
G
T
2
0
0
U
1
2
0
D
4
R
e
v
0
,
J
a
n
u
a
r
y
2
0
0
4
APT website http://www.advancedpower.com
3 - 3
Package outline
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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