APTGT200A60T
A
P
T
G
T
200
A
60T
R
e
v 0 M
a
y, 2005
APT website http://www.advancedpower.com
1 - 5
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
VBUS
Q1
G1
E1
OUT
NT C2
0/VBU S
G2
E2
NT C1
Q2
OUT
OUT
NTC2
VBUS
E1
G2
E2
NTC1
0/VBUS
G2
E2
G1
Symbol Parameter
Max ratings
Unit
V
CES
Collector - Emitter Breakdown Voltage
600
V
T
C
= 25C
290
I
C
Continuous
Collector
Current
T
C
= 80C
200
I
CM
Pulsed Collector Current
T
C
= 25C
400
A
V
GE
Gate Emitter Voltage
20
V
P
D
Maximum Power Dissipation
T
C
= 25C
625 W
RBSOA Reverse Bias Safe Operating Area
T
j
= 150C
400A @ 550V
V
CES
= 600V
I
C
= 200A @ Tc = 80C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Trench + Field Stop IGBT
Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
- Symmetrical design
- Lead frames for power connections
High level of integration
Internal thermistor for temperature monitoring
Benefits
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
Phase leg
Trench + Field Stop IGBT
Power Module
APTGT200A60T
A
P
T
G
T
200
A
60T
R
e
v 0 M
a
y, 2005
APT website http://www.advancedpower.com
2 - 5
All ratings @ T
j
= 25C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
I
CES
Zero Gate Voltage Collector Current
V
GE
= 0V, V
CE
= 600V
250
A
T
j
= 25C
1.5
1.9
V
CE(sat)
Collector Emitter Saturation Voltage
V
GE
=15V
I
C
= 200A
T
j
= 150C
1.7
V
V
GE(th)
Gate
Threshold
Voltage
V
GE
= V
CE
, I
C
= 2 mA
5.0
5.8
6.5
V
I
GES
Gate Emitter Leakage Current
V
GE
= 20V, V
CE
= 0V
400
nA
Dynamic Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
C
ies
Input
Capacitance
12.3
C
oes
Output
Capacitance
0.8
C
res
Reverse Transfer Capacitance
V
GE
= 0V
V
CE
= 25V
f = 1MHz
0.4
nF
T
d(on)
Turn-on
Delay
Time
115
T
r
Rise Time
45
T
d(off)
Turn-off Delay Time
225
T
f
Fall Time
Inductive Switching (25C)
V
GE
= 15V
V
Bus
= 300V
I
C
= 200A
R
G
= 5
55
ns
T
d(on)
Turn-on
Delay
Time
130
T
r
Rise Time
50
T
d(off)
Turn-off Delay Time
300
T
f
Fall Time
70
ns
E
on
Turn on Energy
3.5
E
off
Turn off Energy
Inductive Switching (150C)
V
GE
= 15V
V
Bus
= 300V
I
C
= 200A
R
G
= 5
7
mJ
Reverse diode ratings and characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
V
RRM
Maximum Peak Repetitive Reverse Voltage
600
V
T
j
= 25C
250
I
RM
Maximum Reverse Leakage Current
V
R
=600V
T
j
= 150C
500
A
I
F(A V)
Maximum Average Forward Current
50% duty cycle
Tc = 80C
200
A
T
j
= 25C
1.6
2
V
F
Diode Forward Voltage
I
F
= 200A
V
GE
= 0V
T
j
= 150C
1.5
V
T
j
= 25C
130
t
rr
Reverse Recovery Time
T
j
= 150C
225
ns
T
j
= 25C
9
Q
rr
Reverse Recovery Charge
I
F
= 200A
V
R
= 300V
di/dt =2200A/s
T
j
= 150C
19
C
APTGT200A60T
A
P
T
G
T
200
A
60T
R
e
v 0 M
a
y, 2005
APT website http://www.advancedpower.com
3 - 5
Temperature sensor NTC
(see application note APT0406 on www.advancedpower.com for more information).
Symbol Characteristic
Min Typ Max Unit
R
25
Resistance @ 25C
50
k
B
25/85
T
25
= 298.15 K
3952
K
-
=
T
T
B
R
R
T
1
1
exp
25
85
/
25
25
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
0.24
R
thJC
Junction
to
Case
Diode
0.4
C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500 V
T
J
Operating junction temperature range
-40
175
T
STG
Storage Temperature Range
-40
125
T
C
Operating Case Temperature
-40
100
C
Torque Mounting torque
To Heatsink
M5
1.5
4.7
N.m
Wt Package
Weight
160 g
Package outline
(dimensions in mm)
T: Thermistor temperature
R
T
: Thermistor value at T
APTGT200A60T
A
P
T
G
T
200
A
60T
R
e
v 0 M
a
y, 2005
APT website http://www.advancedpower.com
4 - 5
Typical Performance Curve
Output Characteristics (V
GE
=15V)
T
J
=25C
T
J
=25C
T
J
=125C
T
J
=150C
0
50
100
150
200
250
300
350
400
0
0.5
1
1.5
2
2.5
3
V
CE
(V)
I
C
(A
)
Output Characteristics
V
GE
=15V
V
GE
=13V
V
GE
=19V
V
GE
=9V
0
50
100
150
200
250
300
350
400
0
0.5
1
1.5
2
2.5
3
3.5
V
CE
(V)
I
C
(A
)
T
J
= 150C
Transfert Characteristics
T
J
=25C
T
J
=25C
T
J
=125C
T
J
=150C
0
50
100
150
200
250
300
350
400
5
6
7
8
9
10
11
12
V
GE
(V)
I
C
(A
)
Energy losses vs Collector Current
Eon
Eon
Eoff
Er
0
2
4
6
8
10
12
14
0
50 100 150 200 250 300 350 400
I
C
(A)
E (
m
J
)
V
CE
= 300V
V
GE
= 15V
R
G
= 5
T
J
= 150C
Eon
Eon
Eoff
Eoff
Er
0
4
8
12
16
20
24
0
5
10
15
20
25
30
35
Gate Resistance (ohms)
E (
m
J
)
V
CE
= 300V
V
GE
=15V
I
C
= 200A
T
J
= 150C
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
0
100
200
300
400
500
0
100 200 300 400 500 600 700
V
CE
(V)
I
C
(A
)
V
GE
=15V
T
J
=150C
R
G
=5
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
T
h
e
r
m
a
l Im
p
e
d
a
n
c
e
(
C
/
W
)
IGBT
APTGT200A60T
A
P
T
G
T
200
A
60T
R
e
v 0 M
a
y, 2005
APT website http://www.advancedpower.com
5 - 5
Forward Characteristic of diode
T
J
=25C
T
J
=125C
T
J
=150C
0
50
100
150
200
250
300
350
400
0
0.4
0.8
1.2
1.6
2
2.4
V
F
(V)
I
C
(A
)
Hard
switching
ZCS
ZVS
0
20
40
60
80
100
120
0
50
100
150
200
250
I
C
(A)
F
m
ax
,
O
p
er
at
i
n
g
F
r
eq
u
e
n
cy (
k
H
z
)
V
CE
=300V
D=50%
R
G
=5
T
J
=150C
T
c
=85C
Operating Frequency vs Collector Current
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
The
r
m
a
l
I
m
pe
da
n
c
e
(
C
/
W
)
Diode
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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