ChipFind - документация

Электронный компонент: APTGT100SK170T

Скачать:  PDF   ZIP
APTGT100SK170T
A
P
T
G
T
100
S
K
170T
R
e
v 0 M
a
y, 2005
APT website http://www.advancedpower.com
1 - 5





Absolute maximum ratings
Symbol Parameter
Max
ratings
Unit
V
CES
Collector - Emitter Breakdown Voltage
1700
V
T
C
= 25C
150
I
C
Continuous
Collector
Current
T
C
= 80C
100
I
CM
Pulsed Collector Current
T
C
= 25C
200
A
V
GE
Gate Emitter Voltage
20
V
P
D
Maximum Power Dissipation
T
C
= 25C
560 W
RBSOA Reverse Bias Safe Operating Area
T
j
= 125C
200A @ 1600V



These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
0/VBUS
NT C1
OUT
Q1
VBUS
NT C2
0/VBUS SENSE
G 1
E1




NTC2
OUT
OUT
E1
NTC1
VBUS
0/VBUS
SENSE
0/VBUS
SENSE
0/VBUS
G1
V
CES
= 1700V
I
C
= 100A @ Tc = 80C
Application
AC and DC motor control
Switched Mode Power Supplies
Features
Trench + Field Stop IGBT
Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
- Symmetrical design
- Lead frames for power connections
High level of integration
Internal thermistor for temperature monitoring

Benefits
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
Buck chopper
Trench + Field Stop IGBT
Power Module
APTGT100SK170T
A
P
T
G
T
100
S
K
170T
R
e
v 0 M
a
y, 2005
APT website http://www.advancedpower.com
2 - 5
All ratings @ T
j
= 25C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
I
CES
Zero Gate Voltage Collector Current
V
GE
= 0V, V
CE
= 1700V
350
A
T
j
= 25C
2.0 2.4
V
CE(sat)
Collector Emitter Saturation Voltage
V
GE
= 15V
I
C
= 100A
T
j
= 125C
2.4
V
V
GE(th)
Gate
Threshold
Voltage
V
GE
= V
CE
, I
C
= 2mA
5.0
5.8
6.5
V
I
GES
Gate Emitter Leakage Current
V
GE
= 20V, V
CE
= 0V
500
nA
Dynamic Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
C
ies
Input
Capacitance
9
C
oes
Output
Capacitance
0.36
C
res
Reverse Transfer Capacitance
V
GE
= 0V
V
CE
= 25V
f = 1MHz
0.3
nF
T
d(on)
Turn-on Delay Time
370
T
r
Rise Time
40
T
d(off)
Turn-off Delay Time
650
T
f
Fall Time
Inductive Switching (25C)
V
GE
= 15V
V
Bus
= 900V
I
C
= 100A
R
G
= 4.7
180
ns
T
d(on)
Turn-on
Delay
Time
400
T
r
Rise Time
50
T
d(off)
Turn-off Delay Time
800
T
f
Fall Time
300
ns
E
on
Turn-on Switching Energy
32
E
off
Turn-off Switching Energy
Inductive Switching (125C)
V
GE
= 15V
V
Bus
= 900V
I
C
= 100A
R
G
= 4.7
31
mJ

Chopper diode ratings and characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
V
RRM
Maximum Peak Repetitive Reverse Voltage
1700
V
T
j
= 25C
350
I
RM
Maximum Reverse Leakage Current
V
R
=1700V
T
j
= 125C
600
A
I
F(A V)
Maximum Average Forward Current
50% duty cycle
Tc = 80C
100
A
T
j
= 25C
1.8
2.2
V
F
Diode Forward Voltage
I
F
= 100A
T
j
= 125C
1.9
V
T
j
= 25C
385
t
rr
Reverse Recovery Time
T
j
= 125C
490
ns
T
j
= 25C
28
Q
rr
Reverse Recovery Charge
I
F
= 100A
V
R
= 900V
di/dt =1600A/s
T
j
= 125C
46
C
APTGT100SK170T
A
P
T
G
T
100
S
K
170T
R
e
v 0 M
a
y, 2005
APT website http://www.advancedpower.com
3 - 5
Temperature sensor NTC
(see application note APT0406 on www.advancedpower.com for more information).
Symbol Characteristic
Min Typ Max Unit
R
25
Resistance @ 25C
50
k
B
25/85
T
25
= 298.15 K
3952
K


-
=
T
T
B
R
R
T
1
1
exp
25
85
/
25
25

Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
0.22
R
thJC
Junction
to
Case
Diode
0.39
C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
3400 V
T
J
Operating junction temperature range
-40
150
T
STG
Storage Temperature Range
-40
125
T
C
Operating Case Temperature
-40
100
C
Torque Mounting torque
To Heatsink
M5
1.5
4.7
N.m
Wt Package
Weight
160 g
Package outline
(dimensions in mm)
T: Thermistor temperature
R
T
: Thermistor value at T
APTGT100SK170T
A
P
T
G
T
100
S
K
170T
R
e
v 0 M
a
y, 2005
APT website http://www.advancedpower.com
4 - 5
Typical Performance Curve
Output Characteristics (V
GE
=15V)
T
J
=25C
T
J
=125C
0
25
50
75
100
125
150
175
200
0
0.5
1
1.5
2
2.5
3
3.5
4
V
CE
(V)
I
C
(A
)
Output Characteristics
V
GE
=15V
V
GE
=13V
V
GE
=20V
V
GE
=9V
0
40
80
120
160
200
0
1
2
3
4
5
V
CE
(V)
I
C
(A
)
T
J
= 125C
Transfert Characteristics
T
J
=25C
T
J
=125C
T
J
=125C
0
25
50
75
100
125
150
175
200
5
6
7
8
9
10
11
12
13
V
GE
(V)
I
C
(A
)
Energy losses vs Collector Current
Eon
Eoff
Er
Er
0
20
40
60
80
100
0
25
50
75 100 125 150 175 200
I
C
(A)
E (
m
J
)
V
CE
= 900V
V
GE
= 15V
R
G
= 4.7
T
J
= 125C
Eon
Eoff
Er
0
12.5
25
37.5
50
62.5
75
87.5
100
0
5
10
15
20
25
30
35
40
Gate Resistance (ohms)
E (
m
J
)
V
CE
= 900V
V
GE
=15V
I
C
= 100A
T
J
= 125C
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
0
50
100
150
200
250
0
400
800
1200
1600
2000
V
CE
(V)
I
C
(A
)
V
GE
=15V
T
J
=125C
R
G
=4.7
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
T
h
er
m
a
l
I
m
p
e
d
a
n
ce (

C
/
W
)
IGBT
APTGT100SK170T
A
P
T
G
T
100
S
K
170T
R
e
v 0 M
a
y, 2005
APT website http://www.advancedpower.com
5 - 5
Forward Characteristic of diode
T
J
=25C
T
J
=125C
T
J
=125C
0
25
50
75
100
125
150
175
200
0
0.5
1
1.5
2
2.5
3
V
F
(V)
I
C
(A
)
hard
switching
ZCS
ZVS
0
5
10
15
20
25
30
0
20
40
60
80
100 120 140
I
C
(A)
F
m
a
x
, O
p
er
at
in
g
F
r
eq
u
e
n
cy (
k
H
z
)
V
CE
=900V
D=50%
R
G
=4.7
T
J
=125C
T
C
=75C
Operating Frequency vs Collector Current
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Th
e
r
m
a
l
I
m
pe
d
a
nc
e
(

C
/
W
)
Diode


























APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.