APTGF90DU60T
A
P
T
G
F
90D
U
6
0T
R
e
v 1 M
a
r
c
h,
2004
APT website http://www.advancedpower.com
1 - 6
Application
AC Switches
Switched Mode Power Supplies
Uninterruptible Power Supplies
Features
Non Punch Through (NPT) THUNDERBOLT IGBT
- Low
voltage
drop
- Low tail current
- Switching frequency up to 100 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
- Symmetrical
design
- Lead frames for power connections
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency
operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Easy paralleling due to positive TC of VCEsat
Low profile
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
C2
Q2
NTC1
Q1
E
C1
E1
G1
NTC2
E2
G2
C1
C2
C2
NTC2
NTC1
E1
E
G2
E2
G2
E2
G1
Symbol Parameter
Max
ratings
Unit
V
CES
Collector - Emitter Breakdown Voltage
600
V
T
c
= 25C
110
I
C
Continuous Collector Current
T
c
= 80C
90
I
CM
Pulsed Collector Current
T
c
= 25C
315
A
V
GE
Gate Emitter Voltage
20
V
P
D
Maximum Power Dissipation
T
c
= 25C
416 W
RBSOA Reverse Bias Safe Operating Area
T
j
= 150C
315A @ 600V
V
CES
= 600V
I
C
= 90A @ Tc = 80C
Dual common source
NPT IGBT Power Module
APTGF90DU60T
A
P
T
G
F
90D
U
6
0T
R
e
v 1 M
a
r
c
h,
2004
APT website http://www.advancedpower.com
2 - 6
All ratings @ T
j
= 25C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
BV
CES
Collector - Emitter Breakdown Voltage
V
GE
= 0V, I
C
= 100A
600
V
T
j
= 25C
100
I
CES
Zero Gate Voltage Collector Current
V
GE
= 0V
V
CE
= 600V
T
j
= 125C
1000
A
T
j
= 25C
2.0
2.5
V
CE(on)
Collector Emitter on Voltage
V
GE
=15V
I
C
= 90A
T
j
= 125C
2.2
V
V
GE(th)
Gate Threshold Voltage
V
GE
= V
CE
, I
C
= 1mA
3
5
V
I
GES
Gate Emitter Leakage Current
V
GE
= 20 V, V
CE
= 0V
150
nA
Dynamic Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
C
ies
Input
Capacitance
4300
C
oes
Output
Capacitance
470
C
res
Reverse Transfer Capacitance
V
GE
= 0V
V
CE
= 25V
f = 1MHz
400
pF
Q
g
Total gate Charge
330
Q
ge
Gate Emitter Charge
290
Q
gc
Gate Collector Charge
V
GS
= 15V
V
Bus
= 300V
I
C
= 90A
200
nC
T
d(on)
Turn-on Delay Time
26
T
r
Rise
Time
25
T
d(off)
Turn-off Delay Time
150
T
f
Fall
Time
30
ns
E
on
Turn-on Switching Energy
u
3.35
E
off
Turn-off Switching Energy
v
Inductive Switching (25C)
V
GE
= 15V
V
Bus
= 400V
I
C
= 90A
R
G
= 5
W
2.85
mJ
T
d(on)
Turn-on Delay Time
26
T
r
Rise
Time
25
T
d(off)
Turn-off Delay Time
170
T
f
Fall
Time
40
ns
E
on
Turn-on Switching Energy
u
4.3
E
off
Turn-off Switching Energy
v
Inductive Switching (125C)
V
GE
= 15V
V
Bus
= 400V
I
C
= 90A
R
G
= 5
W
3.5
mJ
Reverse diode ratings and characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
I
F(AV)
Maximum Average Forward Current
50% duty cycle
T
c
= 70C
60 A
I
F
= 60A
1.6
1.8
I
F
= 120A
1.9
V
F
Diode Forward Voltage
I
F
= 60A
T
j
= 125C
1.4
V
T
j
= 25C
85
t
rr
Reverse Recovery Time
I
F
= 60A
V
R
= 400V
di/dt =400A/s T
j
= 125C
160
ns
T
j
= 25C
260
Q
rr
Reverse Recovery Charge
I
F
= 60A
V
R
= 400V
di/dt =400A/s T
j
= 125C
1400
nC
u E
on
includes diode reverse recovery
v In accordance with JEDEC standard JESD24-1
APTGF90DU60T
A
P
T
G
F
90D
U
6
0T
R
e
v 1 M
a
r
c
h,
2004
APT website http://www.advancedpower.com
3 - 6
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
0.3
R
thJC
Junction
to
Case
Diode
0.65
C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
2500 V
T
J
Operating junction temperature range
-40 150
T
STG
Storage
Temperature
Range
-40 125
T
C
Operating Case Temperature
-40
100
C
Torque Mounting
torque
To
Heatsink
M5
4.7 N.m
Wt Package
Weight
160 g
Temperature sensor NTC
Symbol Characteristic
Min Typ Max Unit
R
25
Resistance @ 25C
68
k
W
B
25/85
T
25
= 298.16 K
4080
K
-
=
T
T
B
R
R
T
1
1
exp
25
85
/
25
25
Package outline
T: Thermistor temperature
R
T
: Thermistor value at T
APTGF90DU60T
A
P
T
G
F
90D
U
6
0T
R
e
v 1 M
a
r
c
h,
2004
APT website http://www.advancedpower.com
4 - 6
Typical Performance Curve
Output characteristics (V
GE
=15V)
Tc=-55C
Tc=25C
Tc=125C
0
50
100
150
200
250
300
350
0
1
2
3
4
Ic, C
o
lle
ct
o
r
C
u
r
r
e
n
t
(
A
)
V
CE
, Collector to Emitter Voltage (V)
250s Pulse Test
< 0.5% Duty cycle
Output Characteristics (V
GE
=10V)
Tc=-55C
Tc=25C
Tc=125C
0
50
100
150
200
250
300
0
1
2
3
4
Ic
, Co
lle
c
t
o
r
Cu
r
r
e
n
t
(
A
)
V
CE
, Collector to Emitter Voltage (V)
250s Pulse Test
< 0.5% Duty cycle
Transfer Characteristics
T
J
=-55C
T
J
=25C
T
J
=125C
0
50
100
150
200
250
300
0
1
2
3
4
5
6
7
8
9
10
V
GE
, Gate to Emitter Voltage (V)
Ic
, Co
ll
e
c
t
o
r
Cu
r
r
e
n
t
(
A
)
250s Pulse Test
< 0.5% Duty cycle
Ic=180A
Ic=90A
Ic=45A
0
1
2
3
4
5
6
7
8
6
8
10
12
14
16
V
GE
, Gate to Emitter Voltage (V)
V
CE
, C
o
ll
e
c
t
o
r
t
o
E
m
it
t
e
r V
o
lt
a
g
e
(
V
) On state Voltage vs Gate to Emitter Volt.
T
J
= 25C
250s Pulse Test
< 0.5% Duty cycle
Ic=180A
Ic=90A
Ic=45A
0
0.5
1
1.5
2
2.5
3
3.5
4
-50
-25
0
25
50
75
100
125
T
J
, Junction Temperature (C)
V
CE
, C
o
lle
c
t
o
r
t
o
E
m
it
t
e
r V
o
lt
a
g
e
(
V
) On state Voltage vs Junction Temperature
250s Pulse Test
< 0.5% Duty cycle
V
GE
= 15V
0.70
0.80
0.90
1.00
1.10
1.20
-50
-25
0
25
50
75
100 125
T
J
, Junction Temperature (C)
C
o
lle
c
t
o
r
t
o
E
m
it
t
e
r B
r
e
a
k
d
o
w
n
V
o
lt
a
g
e
(
N
o
r
ma
liz
e
d
)
Breakdown Voltage vs Junction Temp.
0
20
40
60
80
100
120
140
160
-50 -25
0
25
50
75 100 125 150
T
C
, Case Temperature (C)
Ic
,
D
C
C
o
lle
c
t
o
r
C
u
rre
n
t
(
A
)
DC Collector Current vs Case Temperature
Gate Charge
V
CE
=120V
V
CE
=300V
V
CE
=480V
0
2
4
6
8
10
12
14
16
18
0
50
100
150
200
250
300
350
Gate Charge (nC)
V
GE
, G
a
t
e
t
o
E
m
it
t
e
r
V
o
lt
a
g
e
(
V
)
I
C
= 90A
T
J
= 25C
APTGF90DU60T
A
P
T
G
F
90D
U
6
0T
R
e
v 1 M
a
r
c
h,
2004
APT website http://www.advancedpower.com
5 - 6
V
GE
= 15V
15
20
25
30
35
25
50
75
100
125
150
I
CE
, Collector to Emitter Current (A)
t
d
(
on)
,
Tur
n
-
O
n De
l
a
y
Ti
m
e
(
n
s
)
Turn-On Delay Time vs Collector Current
Tj = 25C
V
CE
= 400V
R
G
= 5
V
GE
=15V,
T
J
=25C
V
GE
=15V,
T
J
=125C
50
100
150
200
250
25
50
75
100
125
150
I
CE
, Collector to Emitter Current (A)
td
(o
f
f),
T
u
r
n
-
O
ff D
e
l
a
y
T
i
m
e
(n
s
)
Turn-Off Delay Time vs Collector Current
V
CE
= 400V
R
G
= 5
V
GE
=15V,
T
J
=125C
0
20
40
60
80
25
50
75
100
125
150
I
CE
, Collector to Emitter Current (A)
t
r
, R
i
s
e
T
i
me
(
n
s
)
Current Rise Time vs Collector Current
V
CE
= 400V
R
G
= 5
T
J
= 25C
T
J
= 125C
0
20
40
60
80
25
50
75
100
125
150
I
CE
, Collector to Emitter Current (A)
t
f
,
F
a
ll T
i
me
(
n
s
)
Current Fall Time vs Collector Current
V
CE
= 400V, V
GE
= 15V, R
G
= 5
T
J
=25C,
V
GE
=15V
T
J
=125C,
V
GE
=15V
0
2
4
6
8
0
25
50
75
100
125
150
I
CE
, Collector to Emitter Current (A)
E
on
,
Tur
n-
O
n
E
n
e
r
gy
Los
s
(
m
J
)
Turn-On Energy Loss vs Collector Current
V
CE
= 400V
R
G
= 5
T
J
= 25C
T
J
= 125C
0
1
2
3
4
5
6
0
25
50
75
100
125
150
I
CE
, Collector to Emitter Current (A)
E
of
f
,
Tur
n-
of
f
E
n
e
r
gy
Los
s
(
m
J
)
Turn-Off Energy Loss vs Collector Current
V
CE
= 400V
V
GE
= 15V
R
G
= 5
Eon, 180A
Eoff, 180A
Eon, 90A
Eoff, 90A
Eon, 45A
Eoff, 45A
0
4
8
12
16
0
10
20
30
40
50
Gate Resistance (Ohms)
Switching Energy Losses vs Gate Resistance
S
w
i
t
c
h
i
ng E
n
e
r
gy
Los
s
e
s
(
m
J
)
V
CE
= 400V
V
GE
= 15V
T
J
= 125C
Eon, 180A
Eoff, 180A
Eon, 90A
Eoff, 90A
Eon, 45A
Eoff, 45A
0
2
4
6
8
10
0
25
50
75
100
125
T
J
, Junction Temperature (C)
S
w
i
t
c
h
i
ng E
n
e
r
gy
Los
s
e
s
(
m
J
)
Switching Energy Losses vs Junction Temp.
V
CE
= 400V
V
GE
= 15V
R
G
= 5
APTGF90DU60T
A
P
T
G
F
90D
U
6
0T
R
e
v 1 M
a
r
c
h,
2004
APT website http://www.advancedpower.com
6 - 6
Cies
Cres
Coes
100
1000
10000
0
10
20
30
40
50
C,
Ca
pa
c
i
t
a
nc
e
(
pF)
Capacitance vs Collector to Emitter Voltage
V
CE
, Collector to Emitter Voltage (V)
0
50
100
150
200
250
300
350
0
200
400
600
800
I
C
, C
o
lle
c
t
o
r
C
u
rr
e
n
t
(
A
)
Minimum Switching Safe Operating Area
V
CE
, Collector to Emitter Voltage (V)
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
The
r
m
a
l
I
m
pe
da
nc
e
(
C/
W
)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Operating Frequency vs Collector Current
0
20
40
60
80
100
120
20
40
60
80
100
120
I
C
, Collector Current (A)
F
m
ax
,
O
p
er
at
i
n
g
F
r
eq
u
e
n
c
y (
k
H
z
)
V
CE
= 400V
D = 50%
R
G
= 5
T
J
= 125C
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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