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Электронный компонент: APTGF75DH120T

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APTGF75DH120T
A
P
T
G
F
7
5
D
H
120T
R
e
v 0 J
a
nua
r
y, 2005
APT website http://www.advancedpower.com
1 - 5




Absolute maximum ratings
Symbol Parameter
Max
ratings
Unit
V
CES
Collector - Emitter Breakdown Voltage
1200
V
T
c
= 25C
100
I
C
Continuous
Collector
Current
T
c
= 80C
75
I
CM
Pulsed Collector Current
T
c
= 25C
150
A
V
GE
Gate Emitter Voltage
20
V
P
D
Maximum Power Dissipation
T
c
= 25C
500 W
RBSOA Reverse Bias Safe Operating Area
T
j
= 150C 150A @ 1200V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
VBUS
Q4
OUT2
OUT1
VBUS SENSE
CR3
0/VBUS
G4
E4
NTC2
Q1
CR2
0/VBUS SENSE
NTC1
G1
E1






NTC2
OUT1
OUT2
VBUS
VBUS
SENSE
E1
NTC1
E4
G4
0/VBUS
0/VBUS
SENSE
G1
V
CES
= 1200V
I
C
= 75A @ Tc = 80C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Non Punch Through (NPT) FAST IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
-
Symmetrical design
-
Lead frames for power connections
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency
operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Easy paralleling due to positive TC of VCEsat
Low profile
Asymmetrical - Bridge
NPT IGBT Power Module
APTGF75DH120T
A
P
T
G
F
7
5
D
H
120T
R
e
v 0 J
a
nua
r
y, 2005
APT website http://www.advancedpower.com
2 - 5
All ratings @ T
j
= 25C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
T
j
= 25C
0.1 2
I
CES
Zero Gate Voltage Collector Current
V
GE
= 0V
V
CE
= 1200V
T
j
= 125C
4
mA
T
j
= 25C
3.2 3.7
V
CE(on)
Collector Emitter on Voltage
V
GE
=15V
I
C
= 75A
T
j
= 125C
3.9
V
V
GE(th)
Gate
Threshold
Voltage
V
GE
= V
CE
, I
C
= 2.5 mA
4.5
6.5
V
I
GES
Gate Emitter Leakage Current
V
GE
= 20V, V
CE
= 0V
500
nA

Dynamic Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
C
ies
Input
Capacitance
5.1
C
oes
Output
Capacitance
0.7
C
res
Reverse Transfer Capacitance
V
GE
= 0V
V
CE
= 25V
f = 1MHz
0.4
nF
T
d(on)
Turn-on
Delay
Time
120
T
r
Rise Time
50
T
d(off)
Turn-off Delay Time
310
T
f
Fall Time
Inductive Switching (25C)
V
GE
= 15V
V
Bus
= 600V
I
C
= 75A
R
G
= 7.5
20
ns
T
d(on)
Turn-on
Delay
Time
130
T
r
Rise Time
60
T
d(off)
Turn-off Delay Time
360
T
f
Fall Time
30
ns
E
on
Turn-on Switching Energy
9
E
off
Turn-off Switching Energy
Inductive Switching (125C)
V
GE
= 15V
V
Bus
= 600V
I
C
= 75A
R
G
= 7.5
4
mJ

Reverse diode ratings and characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
V
RRM
Maximum Peak Repetitive Reverse Voltage
1200
V
T
j
= 25C
250
I
RM
Maximum Reverse Leakage Current
V
R
=1200V
T
j
= 125C
500
A
I
F(A V)
Maximum Average Forward Current
50% duty cycle
Tc = 70C
100
A
I
F
= 100A
2.0
2.5
I
F
= 200A
2.3
V
F
Diode Forward Voltage
I
F
= 100A
T
j
= 125C
1.8
V
T
j
= 25C
420
t
rr
Reverse Recovery Time
I
F
= 100A
V
R
= 800V
di/dt =200A/s T
j
= 125C
580
ns
T
j
= 25C
1.2
Q
rr
Reverse Recovery Charge
I
F
= 100A
V
R
= 800V
di/dt =200A/s T
j
= 125C
5.3
C


APTGF75DH120T
A
P
T
G
F
7
5
D
H
120T
R
e
v 0 J
a
nua
r
y, 2005
APT website http://www.advancedpower.com
3 - 5
Temperature sensor NTC
Symbol Characteristic
Min Typ Max Unit
R
25
Resistance @ 25C
68
k
B
25/85
T
25
= 298.16 K
4080
K


-
=
T
T
B
R
R
T
1
1
exp
25
85
/
25
25

Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
0.25
R
thJC
Junction
to
Case
Diode
0.6
C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500 V
T
J
Operating junction temperature range
-40
150
T
STG
Storage Temperature Range
-40
125
T
C
Operating Case Temperature
-40
100
C
Torque Mounting torque
To heatsink
M5
4.7 N.m
Wt Package
Weight
160 g
Package outline
T: Thermistor temperature
R
T
: Thermistor value at T
APTGF75DH120T
A
P
T
G
F
7
5
D
H
120T
R
e
v 0 J
a
nua
r
y, 2005
APT website http://www.advancedpower.com
4 - 5
Typical Performance Curve
Output Characteristics (V
GE
=15V)
T
J
=25C
T
J
=125C
0
25
50
75
100
125
150
0
1
2
3
4
5
6
V
CE
(V)
I
C
(A
)
Output Characteristics
V
GE
=15V
V
GE
=12V
V
GE
=20V
V
GE
=9V
0
25
50
75
100
125
150
0
1
2
3
4
5
6
V
CE
(V)
I
C
(A
)
T
J
= 125C
Transfert Characteristics
T
J
=25C
T
J
=125C
0
25
50
75
100
125
150
5
6
7
8
9
10
11
12
V
GE
(V)
I
C
(A
)
Energy losses vs Collector Current
Eon
Eoff
0
4
8
12
16
20
24
28
0
25
50
75
100
125
150
I
C
(A)
E (
m
J
)
V
CE
= 600V
V
GE
= 15V
R
G
= 7.5
T
J
= 125C
Eon
Eoff
0
5
10
15
20
25
30
35
0
10
20
30
40
50
60
70
Gate Resistance (ohms)
E (
m
J
)
V
CE
= 600V
V
GE
=15V
I
C
= 75A
T
J
= 125C
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
0
25
50
75
100
125
150
175
0
300
600
900
1200
1500
V
CE
(V)
I
C
(A
)
V
GE
=15V
T
J
=125C
R
G
=7.5
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Th
e
r
m
a
l
I
m
p
e
da
nc
e
(

C
/
W
)
IGBT
APTGF75DH120T
A
P
T
G
F
7
5
D
H
120T
R
e
v 0 J
a
nua
r
y, 2005
APT website http://www.advancedpower.com
5 - 5
Forward Characteristic of diode
T
J
=25C
T
J
=125C
0
50
100
150
200
250
0
0.5
1
1.5
2
2.5
3
V
F
(V)
I
C
(A
)
hard
switching
ZCS
ZVS
0
10
20
30
40
50
60
70
80
90
100
0
20
40
60
80
100
I
C
(A)
Fma
x
,
O
p
e
r
a
t
i
ng Fr
e
que
nc
y
(k
H
z
)
V
CE
=600V
D=50%
R
G
=7.5
T
J
=125C
T
C
=75C
Operating Frequency vs Collector Current
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
The
r
m
a
l
I
m
pe
d
a
nc
e
(

C
/
W
)
Diode


















APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.