APTGF50DH120T
A
P
T
G
F
50D
H
120T
R
e
v1 M
a
r
c
h,
2004
APT website http://www.advancedpower.com
1 - 6
Application
Welding converters
Switched Mode Power Supplies
Switched Reluctance Motor Drives
Features
Non Punch Through (NPT) FAST IGBT
- Low
voltage
drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
- Symmetrical
design
- Lead frames for power connections
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency
operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Easy paralleling due to positive TC of VCEsat
Low profile
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
VBUS
Q4
OUT2
OUT1
VBUS SENSE
CR3
0/VBU S
G4
E4
NTC2
Q1
CR2
0/VBU S SENSE
NTC1
G1
E1
NTC2
OUT1
OUT2
VBUS
VBUS
SENSE
E1
NTC1
E4
G4
0/VBUS
0/VBUS
SENSE
G1
Symbol Parameter
Max
ratings
Unit
V
CES
Collector - Emitter Breakdown Voltage
1200
V
T
c
= 25C
75
I
C
Continuous Collector Current
T
c
= 80C
50
I
CM
Pulsed Collector Current
T
c
= 25C
150
A
V
GE
Gate Emitter Voltage
20
V
P
D
Maximum Power Dissipation
T
c
= 25C
312 W
RBSOA Reverse Bias Safe Operating Area
T
j
= 150C
150A @ 1200V
V
CES
= 1200V
I
C
= 50A @ Tc = 80C
Asymmetrical - Bridge
NPT IGBT Power Module
APTGF50DH120T
A
P
T
G
F
50D
H
120T
R
e
v1 M
a
r
c
h,
2004
APT website http://www.advancedpower.com
2 - 6
All ratings @ T
j
= 25C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
BV
CES
Collector - Emitter Breakdown Voltage
V
GE
= 0V, I
C
= 500 A
1200
V
T
j
= 25C
500
I
CES
Zero Gate Voltage Collector Current
V
GE
= 0V
V
CE
= 1200V
T
j
= 125C
2500
A
T
j
= 25C
3.2
3.7
V
CE(on)
Collector Emitter on Voltage
V
GE
=15V
I
C
= 50A
T
j
= 125C
4.0
V
V
GE(th)
Gate Threshold Voltage
V
GE
= V
CE
, I
C
= 1 mA
4.5
6.5
V
I
GES
Gate Emitter Leakage Current
V
GE
= 20 V, V
CE
= 0V
100
nA
Dynamic Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
C
ies
Input
Capacitance
3450
C
oes
Output
Capacitance
330
C
res
Reverse Transfer Capacitance
V
GE
= 0V
V
CE
= 25V
f = 1MHz
220
pF
Q
g
Total gate Charge
330
Q
ge
Gate Emitter Charge
35
Q
gc
Gate Collector Charge
V
GS
= 15V
V
Bus
= 600V
I
C
= 50A
200
nC
T
d(on)
Turn-on Delay Time
35
T
r
Rise Time
65
T
d(off)
Turn-off Delay Time
320
T
f
Fall Time
30
ns
E
on
Turn-on Switching Energy
u
5.4
E
off
Turn-off Switching Energy
v
Inductive Switching (25C)
V
GE
= 15V
V
Bus
= 600V
I
C
= 50A
R
G
= 5
W
2.3
mJ
T
d(on)
Turn-on Delay Time
35
T
r
Rise
Time
65
T
d(off)
Turn-off Delay Time
360
T
f
Fall
Time
40
ns
E
on
Turn-on Switching Energy
u
6.9
E
off
Turn-off Switching Energy
v
Inductive Switching (125C)
V
GE
= 15V
V
Bus
= 600V
I
C
= 50A
R
G
= 5
W
3.05
mJ
Reverse diode ratings and characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
I
F(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 70C
100
A
I
F
= 100A
2.0
2.5
I
F
= 200A
2.3
V
F
Diode Forward Voltage
I
F
= 100A
T
j
= 125C
1.8
V
T
j
= 25C
420
t
rr
Reverse Recovery Time
I
F
= 100A
V
R
= 800V
di/dt =200A/s T
j
= 125C
580
ns
T
j
= 25C
1250
Q
rr
Reverse Recovery Charge
I
F
= 100A
V
R
= 800V
di/dt =200A/s T
j
= 125C
5350
nC
u E
on
includes diode reverse recovery
v In accordance with JEDEC standard JESD24-1
APTGF50DH120T
A
P
T
G
F
50D
H
120T
R
e
v1 M
a
r
c
h,
2004
APT website http://www.advancedpower.com
3 - 6
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
0.4
R
thJC
Junction
to
Case
Diode
0.6
C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
2500 V
T
J
Operating junction temperature range
-40 150
T
STG
Storage
Temperature
Range
-40 125
T
C
Operating Case Temperature
-40
100
C
Torque Mounting
torque
To
Heatsink
M5
4.7 N.m
Wt Package
Weight
160 g
Temperature sensor NTC
Symbol Characteristic
Min Typ Max Unit
R
25
Resistance @ 25C
68
k
W
B
25/85
T
25
= 298.16 K
4080
K
-
=
T
T
B
R
R
T
1
1
exp
25
85
/
25
25
Package outline
T: Thermistor temperature
R
T
: Thermistor value at T
APTGF50DH120T
A
P
T
G
F
50D
H
120T
R
e
v1 M
a
r
c
h,
2004
APT website http://www.advancedpower.com
4 - 6
Typical Performance Curve
Output characteristics (V
GE
=15V)
T
J
=25C
T
J
=125C
0
40
80
120
160
200
0
2
4
6
8
Ic
, C
o
lle
c
t
o
r
C
u
rre
n
t
(
A
)
V
CE
, Collector to Emitter Voltage (V)
250s Pulse Test
< 0.5% Duty cycle
Output Characteristics (V
GE
=10V)
T
J
=25C
T
J
=125C
0
10
20
30
40
50
0
1
2
3
4
Ic
,
C
o
lle
c
t
o
r
C
u
rr
e
n
t
(
A
)
V
CE
, Collector to Emitter Voltage (V)
250s Pulse Test
< 0.5% Duty cycle
Transfer Characteristics
T
J
=25C
T
J
=125C
0
50
100
150
200
250
300
0
4
8
12
16
V
GE
, Gate to Emitter Voltage (V)
Ic
,
C
o
lle
c
t
o
r
C
u
rr
e
n
t
(
A
)
250s Pulse Test
< 0.5% Duty cycle
Gate Charge
V
CE
=240V
V
CE
=600V
V
CE
=960V
0
2
4
6
8
10
12
14
16
18
0
50
100
150
200
250
300
350
Gate Charge (nC)
V
GE
,
Ga
t
e
t
o
E
m
it
t
e
r Vo
lt
a
g
e
(
V
)
I
C
= 50A
T
J
= 25C
Ic=100A
Ic=50A
Ic=25A
0
1
2
3
4
5
6
7
8
9
9
10
11
12
13
14
15
16
V
GE
, Gate to Emitter Voltage (V)
On state Voltage vs Gate to Emitter Volt.
V
CE
,
C
o
ll
e
c
t
o
r t
o
Emit
t
e
r Vo
lt
a
g
e
(
V
)
T
J
= 25C
250s Pulse Test
< 0.5% Duty cycle
Ic=100A
Ic=50A
Ic=25A
0
1
2
3
4
5
6
-50
-25
0
25
50
75
100
125
T
J
, Junction Temperature (C)
V
CE
, C
o
lle
c
t
o
r
t
o
Emit
t
e
r
Vo
lt
a
g
e
(
V
) On state Voltage vs Junction Temperature
250s Pulse Test
< 0.5% Duty cycle
V
GE
= 15V
0.70
0.75
0.80
0.85
0.90
0.95
1.00
1.05
1.10
1.15
1.20
-50
-25
0
25
50
75
100 125
T
J
, Junction Temperature (C)
C
o
lle
c
t
o
r
t
o
Emit
t
e
r B
r
e
a
k
d
o
w
n
Vo
lt
a
g
e
(
N
o
rma
lize
d
)
Breakdown Voltage vs Junction Temp.
0
10
20
30
40
50
60
70
80
90
-50
-25
0
25
50
75
100 125 150
T
C
, Case Temperature (C)
Ic
, D
C
C
o
lle
c
t
o
r
C
u
rre
n
t
(
A
)
DC Collector Current vs Case Temperature
APTGF50DH120T
A
P
T
G
F
50D
H
120T
R
e
v1 M
a
r
c
h,
2004
APT website http://www.advancedpower.com
5 - 6
V
GE
= 15V
25
30
35
40
45
0
25
50
75
100
125
I
CE
, Collector to Emitter Current (A)
t
d
(
on)
,
Turn-
O
n
De
l
a
y
T
i
m
e
(
n
s
)
Turn-On Delay Time vs Collector Current
V
CE
= 600V
R
G
= 5
V
GE
=15V,
T
J
=25C
V
GE
=15V,
T
J
=125C
200
250
300
350
400
0
25
50
75
100
125
I
CE
, Collector to Emitter Current (A)
Turn-Off Delay Time vs Collector Current
td
(o
ff),
T
u
r
n
-
O
ff D
e
l
a
y
T
i
m
e
(n
s
)
V
CE
= 600V
R
G
= 5
V
GE
=15V
20
60
100
140
180
0
25
50
75
100
125
I
CE
, Collector to Emitter Current (A)
t
r
,
R
i
se T
i
m
e
(
n
s)
Current Rise Time vs Collector Current
V
CE
= 600V
R
G
= 5
T
J
= 25C
T
J
= 125C
20
30
40
50
0
25
50
75
100
125
I
CE
, Collector to Emitter Current (A)
t
f
,
F
a
ll T
i
m
e
(
n
s
)
Current Fall Time vs Collector Current
V
CE
= 600V, V
GE
= 15V, R
G
= 5
T
J
=25C,
V
GE
=15V
T
J
=125C,
V
GE
=15V
0
4
8
12
16
20
24
28
0
25
50
75
100
125
I
CE
, Collector to Emitter Current (A)
Turn-On Energy Loss vs Collector Current
E
on,
Turn-
O
n
E
n
e
r
gy
L
o
s
s
(
m
J
)
V
CE
= 600V
R
G
= 5
T
J
= 25C
T
J
= 125C
0
2
4
6
8
0
25
50
75
100
125
I
CE
, Collector to Emitter Current (A)
E
o
f
f
,
Turn-
of
f
E
n
e
r
gy
Los
s
(
m
J
)
Turn-Off Energy Loss vs Collector Current
V
CE
= 600V
V
GE
= 15V
R
G
= 5
Eon, 50A
Eoff, 50A
Eon, 25A
Eoff, 25A
0
2
4
6
8
10
12
14
16
18
0
10
20
30
40
50
Gate Resistance (Ohms)
S
w
i
t
c
h
i
ng E
n
e
r
gy
Los
s
e
s
(
m
J
)
Switching Energy Losses vs Gate Resistance
V
CE
= 600V
V
GE
= 15V
T
J
= 125C
Eon, 50A
Eoff, 50A
Eon, 25A
Eoff, 25A
0
2
4
6
8
0
25
50
75
100
125
T
J
, Junction Temperature (C)
S
w
i
t
ch
i
n
g
En
e
r
g
y
L
o
s
ses (
m
J)
Switching Energy Losses vs Junction Temp.
V
CE
= 600V
V
GE
= 15V
R
G
= 5
APTGF50DH120T
A
P
T
G
F
50D
H
120T
R
e
v1 M
a
r
c
h,
2004
APT website http://www.advancedpower.com
6 - 6
Cies
Cres
Coes
100
1000
10000
0
10
20
30
40
50
C,
Ca
pa
c
i
t
a
nc
e
(
pF)
Capacitance vs Collector to Emitter Voltage
V
CE
, Collector to Emitter Voltage (V)
0
20
40
60
80
100
120
140
160
0
400
800
1200
I
C
,
C
o
l
l
e
c
to
r
C
u
r
r
e
n
t
(A
)
Minimum Switching Safe Operating Area
V
CE
, Collector to Emitter Voltage (V)
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
The
r
m
a
l
I
m
pe
da
nc
e
(
C/
W
)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0
10
20
30
40
50
60
70
10
20
30
40
50
60
I
C
, Collector Current (A)
Operating Frequency vs Collector Current
Fm
a
x
,
O
p
e
r
a
t
i
ng Fr
e
que
nc
y
(
k
Hz)
V
CE
= 600V
D = 50%
R
G
= 5
T
J
= 125C
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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