APTGF350DU60
A
P
T
G
F
3
50D
U
60 R
e
v 1 M
a
r
c
h,
2004
APT website http://www.advancedpower.com
1 - 6
Absolute maximum ratings
Symbol Parameter
Max
ratings
Unit
V
CES
Collector - Emitter Breakdown Voltage
600
V
T
c
= 25C
430
I
C
Continuous Collector Current
T
c
= 80C
350
I
CM
Pulsed Collector Current
T
c
= 25C
1225
A
V
GE
Gate Emitter Voltage
20
V
P
D
Maximum Power Dissipation
T
c
= 25C
1562 W
RBSOA Reverse Bias Safe Operating Area
T
j
= 150C 1225A @ 600V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
C2
C1
E
E1
G1
G2
E2
V
CES
= 600V
I
C
= 350A @ Tc = 80C
Application
AC Switches
Switched Mode Power Supplies
Uninterruptible Power Supplies
Features
Non Punch Through (NPT) THUNDERBOLT IGBT
- Low
voltage
drop
- Low tail current
- Switching frequency up to 100 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
- Symmetrical
design
- M5 power connectors
High level of integration
Benefits
Outstanding performance at high frequency
operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
Dual common source
NPT IGBT Power Module
APTGF350DU60
A
P
T
G
F
3
50D
U
60 R
e
v 1 M
a
r
c
h,
2004
APT website http://www.advancedpower.com
2 - 6
All ratings @ T
j
= 25C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
BV
CES
Collector - Emitter Breakdown Voltage
V
GE
= 0V, I
C
= 200A
600
V
T
j
= 25C
200
I
CES
Zero Gate Voltage Collector Current
V
GE
= 0V
V
CE
= 600V
T
j
= 125C
4000
A
T
j
= 25C
2.0
2.5
V
CE(on)
Collector Emitter on Voltage
V
GE
=15V
I
C
= 360A
T
j
= 125C
2.2
V
V
GE(th)
Gate Threshold Voltage
V
GE
= V
CE
, I
C
= 4mA
3
5
V
I
GES
Gate Emitter Leakage Current
V
GE
= 20V, V
CE
= 0V
300
nA
Dynamic Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
C
ies
Input
Capacitance
17.2
C
oes
Output
Capacitance
1.88
C
res
Reverse Transfer Capacitance
V
GE
= 0V
V
CE
= 25V
f = 1MHz
1.6
nF
Q
g
Total gate Charge
1320
Q
ge
Gate Emitter Charge
1160
Q
gc
Gate Collector Charge
V
GS
= 15V
V
Bus
= 300V
I
C
= 360A
800
nC
T
d(on)
Turn-on Delay Time
26
T
r
Rise
Time
25
T
d(off)
Turn-off Delay Time
150
T
f
Fall
Time
30
ns
E
on
Turn-on Switching Energy
u
13.5
E
off
Turn-off Switching Energy
v
Inductive Switching (25C)
V
GE
= 15V
V
Bus
= 400V
I
C
= 360A
R
G
= 1.25
W
11.5
mJ
T
d(on)
Turn-on Delay Time
26
T
r
Rise
Time
25
T
d(off)
Turn-off Delay Time
170
T
f
Fall
Time
40
ns
E
on
Turn-on Switching Energy
u
17.2
E
off
Turn-off Switching Energy
v
Inductive Switching (125C)
V
GE
= 15V
V
Bus
= 400V
I
C
= 360A
R
G
= 1.25
W
14
mJ
Reverse diode ratings and characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
I
F(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 80C
400
A
I
F
= 400A
1.6
1.8
I
F
= 800A
1.9
V
F
Diode Forward Voltage
I
F
= 400A
T
j
= 125C
1.4
V
T
j
= 25C
180
t
rr
Reverse Recovery Time
I
F
= 400A
V
R
= 400V
di/dt =800A/s T
j
= 125C
220
ns
T
j
= 25C
1560
Q
rr
Reverse Recovery Charge
I
F
= 400A
V
R
= 400V
di/dt =800A/s T
j
= 125C
5800
nC
u E
on
includes diode reverse recovery
v In accordance with JEDEC standard JESD24-1
APTGF350DU60
A
P
T
G
F
3
50D
U
60 R
e
v 1 M
a
r
c
h,
2004
APT website http://www.advancedpower.com
3 - 6
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
0.08
R
thJC
Junction
to
Case
Diode
0.16
C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
2500 V
T
J
Operating junction temperature range
-40 150
T
STG
Storage
Temperature
Range
-40 125
T
C
Operating Case Temperature
-40
100
C
To heatsink
M6
3
5
Torque Mounting
torque
For terminals
M5
2
3.5
N.m
Wt Package
Weight
280 g
Package outline
APTGF350DU60
A
P
T
G
F
3
50D
U
60 R
e
v 1 M
a
r
c
h,
2004
APT website http://www.advancedpower.com
4 - 6
Typical Performance Curve
Output characteristics (V
GE
=15V)
T
J
=-55C
T
J
=25C
T
J
=125C
0
200
400
600
800
1000
1200
0
1
2
3
4
Ic,
C
o
llect
o
r
C
u
r
r
en
t
(
A
)
V
CE
, Collector to Emitter Voltage (V)
250s Pulse Test
< 0.5% Duty cycle
Transfer Characteristics
T
J
=-55C
T
J
=25C
T
J
=125C
0
200
400
600
800
1000
1200
0
1
2
3
4
5
6
7
8
9
10
V
GE
, Gate to Emitter Voltage (V)
Ic, C
o
llect
o
r
C
u
r
r
e
n
t
(
A
)
250s Pulse Test
< 0.5% Duty cycle
Ic=720A
Ic=360A
Ic=180A
0
1
2
3
4
5
6
7
8
6
8
10
12
14
16
V
GE
, Gate to Emitter Voltage (V)
V
CE
,
C
o
lle
c
t
o
r
t
o
Emit
t
e
r
Vo
lt
a
g
e
(
V
) On state Voltage vs Gate to Emitter Volt.
T
J
= 25C
250s Pulse Test
< 0.5% Duty cycle
Ic=720A
Ic=360A
Ic=180A
0
0.5
1
1.5
2
2.5
3
3.5
4
-50
-25
0
25
50
75
100
125
T
J
, Junction Temperature (C)
V
CE
, C
o
lle
c
t
o
r
t
o
Emit
t
e
r V
o
lt
a
g
e
(
V
) On state Voltage vs Junction Temperature
250s Pulse Test
< 0.5% Duty cycle
V
GE
= 15V
0.70
0.80
0.90
1.00
1.10
1.20
-50
-25
0
25
50
75
100 125
T
J
, Junction Temperature (C)
Col
l
e
c
t
or
t
o
E
m
i
t
t
e
r
B
r
e
a
k
dow
n
Vo
lt
a
g
e
(
N
o
rma
liz
e
d
)
Breakdown Voltage vs Junction Temp.
0
160
320
480
640
-50 -25
0
25
50
75 100 125 150
T
C
, Case Temperature (C)
Ic
, D
C
C
o
lle
c
t
o
r
C
u
r
r
e
n
t
(
A
)
DC Collector Current vs Case Temperature
Gate Charge
V
CE
=120V
V
CE
=300V
V
CE
=480V
0
2
4
6
8
10
12
14
16
18
0
200
400
600
800 1000 1200 1400
Gate Charge (nC)
V
GE
, Ga
t
e
t
o
Emit
t
e
r V
o
lt
a
g
e
(
V
)
I
C
= 360A
T
J
= 25C
Output Characteristics (V
GE
=10V)
T
J
=-55C
T
J
=25C
T
J
=125C
0
200
400
600
800
1000
1200
0
1
2
3
4
Ic
, C
o
lle
c
t
o
r
C
u
rre
n
t
(
A
)
V
CE
, Collector to Emitter Voltage (V)
250s Pulse Test
< 0.5% Duty cycle
APTGF350DU60
A
P
T
G
F
3
50D
U
60 R
e
v 1 M
a
r
c
h,
2004
APT website http://www.advancedpower.com
5 - 6
V
GE
= 15V
15
20
25
30
35
100
200
300
400
500
600
I
CE
, Collector to Emitter Current (A)
t
d
(
on)
,
Tur
n-
O
n
De
l
a
y
Ti
m
e
(
n
s
)
Turn-On Delay Time vs Collector Current
Tj = 25C
V
CE
= 400V
R
G
= 1.25
V
GE
=15V,
T
J
=25C
V
GE
=15V,
T
J
=125C
50
100
150
200
250
100
200
300
400
500
600
I
CE
, Collector to Emitter Current (A)
td
(o
ff),
T
u
r
n
-
O
ff D
e
l
a
y
T
i
m
e
(n
s
)
Turn-Off Delay Time vs Collector Current
V
CE
= 400V
R
G
= 1.25
V
GE
=15V,
T
J
=125C
0
20
40
60
80
100
200
300
400
500
600
I
CE
, Collector to Emitter Current (A)
t
r
, R
i
s
e
T
i
me
(
n
s
)
Current Rise Time vs Collector Current
V
CE
= 400V
R
G
= 1.25
T
J
= 25C
T
J
= 125C
0
20
40
60
80
100
200
300
400
500
600
I
CE
, Collector to Emitter Current (A)
tf,
F
a
l
l
T
i
m
e
(n
s
)
Current Fall Time vs Collector Current
V
CE
= 400V, V
GE
= 15V, R
G
= 1.25
T
J
=25C,
V
GE
=15V
T
J
=125C,
V
GE
=15V
0
8
16
24
32
100
200
300
400
500
600
I
CE
, Collector to Emitter Current (A)
E
on
,
Tur
n-
O
n
E
n
e
r
gy
Los
s
(
m
J
)
Turn-On Energy Loss vs Collector Current
V
CE
= 400V
R
G
= 1.25
T
J
= 25C
T
J
= 125C
0
4
8
12
16
20
24
100
200
300
400
500
600
I
CE
, Collector to Emitter Current (A)
E
of
f
,
Tur
n-
of
f
E
n
e
r
gy
Los
s
(
m
J
)
Turn-Off Energy Loss vs Collector Current
V
CE
= 400V
V
GE
= 15V
R
G
= 1.25
Eon, 720A
Eoff, 720A
Eon, 360A
Eoff, 360A
Eon, 180A
Eoff, 180A
0
16
32
48
64
0
2
4
6
8
10
12
Gate Resistance (Ohms)
Switching Energy Losses vs Gate Resistance
Sw
i
t
ch
i
n
g
E
n
er
g
y
L
o
s
se
s
(
m
J)
V
CE
= 400V
V
GE
= 15V
T
J
= 125C
Eon, 720A
Eoff, 720A
Eon, 360A
Eoff, 360A
Eon, 180A
Eoff, 180A
0
8
16
24
32
40
0
25
50
75
100
125
T
J
, Junction Temperature (C)
S
w
i
t
c
h
i
ng E
n
e
r
gy
Los
s
e
s
(
m
J
)
Switching Energy Losses vs Junction Temp.
V
CE
= 400V
V
GE
= 15V
R
G
= 1.25
APTGF350DU60
A
P
T
G
F
3
50D
U
60 R
e
v 1 M
a
r
c
h,
2004
APT website http://www.advancedpower.com
6 - 6
Cies
Cres
Coes
100
1000
10000
100000
0
10
20
30
40
50
C
,
Ca
pa
c
i
t
a
nc
e
(
pF)
Capacitance vs Collector to Emitter Voltage
V
CE
, Collector to Emitter Voltage (V)
0
200
400
600
800
1000
1200
1400
0
200
400
600
800
I
C
,
Col
l
e
c
t
o
r
Cur
r
e
nt
(
A
)
Minimum Switching Safe Operating Area
V
CE
, Collector to Emitter Voltage (V)
0.9
0.175
0.125
0.075
0.025
0.0125
Single Pulse
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
The
r
m
a
l
I
m
p
e
da
nc
e
(
C/
W
)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Operating Frequency vs Collector Current
0
20
40
60
80
100
120
140
160
180
50 100 150 200 250 300 350 400 450
I
C
, Collector Current (A)
F
ma
x
,
O
p
e
r
a
t
i
n
g
Fr
e
que
nc
y
(
k
Hz)
V
CE
= 400V
D = 50%
R
G
= 1.25
T
J
= 125C
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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