APTGF30H60T3
A
P
T
G
F
3
0
H
60T
3 R
e
v 0 S
e
pt
e
m
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r
,
2004
APT website http://www.advancedpower.com
1 - 6
Absolute maximum ratings
Symbol Parameter
Max
ratings
Unit
V
CES
Collector - Emitter Breakdown Voltage
600
V
T
C
= 25C
42
I
C
Continuous
Collector
Current
T
C
= 80C
30
I
CM
Pulsed Collector Current
T
C
= 25C
150
A
V
GE
Gate Emitter Voltage
20
V
P
D
Maximum Power Dissipation
T
C
= 25C
140
W
RBSOA Reverse Bias Safe Operating Area
T
j
= 125C
60A@500V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Q3
11
10
Q1
CR1
7
22
13 14
CR3
3
30
29
32
18
19
23
8
15
31
R1
16
4
CR4
CR2
Q2
Q4
26
27
16
15
18
20
23 22
13
11 12
14
8
7
29
30
28 27 26
3
32
31
10
19
2
25
4
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 ...
V
CES
= 600V
I
C
= 30A @ Tc = 80C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Non Punch Through (NPT) Fast IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
- Symmetrical design
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Internal thermistor for temperature monitoring
Benefits
Outstanding performance at high frequency
operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal
for easy PCB mounting
Low profile
Easy paralleling due to positive TC of VCEsat
Each leg can be easily paralleled to achieve a
phase leg of twice the current capability
Full - Bridge
NPT IGBT Power Module
APTGF30H60T3
A
P
T
G
F
3
0
H
60T
3 R
e
v 0 S
e
pt
e
m
be
r
,
2004
APT website http://www.advancedpower.com
2 - 6
All ratings @ T
j
= 25C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
BV
CES
Collector - Emitter Breakdown Voltage
V
GE
= 0V, I
C
= 500A
600
V
T
j
= 25C
1
500
A
I
CES
Zero Gate Voltage Collector Current
V
GE
= 0V
V
CE
= 600V
T
j
= 125C
1 mA
T
j
= 25C
1.7 2.0 2.45
V
CE(on)
Collector Emitter on Voltage
V
GE
=15V
I
C
= 30A
T
j
= 125C
2.2
V
V
GE(th)
Gate
Threshold
Voltage
V
GE
= V
CE
, I
C
= 1mA
4
6
V
I
GES
Gate Emitter Leakage Current
V
GE
= 20V, V
CE
= 0V
400
nA
Dynamic Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
C
ies
Input
Capacitance
1350
C
oes
Output
Capacitance
193
C
res
Reverse Transfer Capacitance
V
GE
= 0V
V
CE
= 25V
f = 1MHz
120
pF
Q
g
Total gate Charge
99
Q
ge
Gate Emitter Charge
10
Q
gc
Gate Collector Charge
V
GE
= 15V
V
Bus
= 300V
I
C
=30A
60
nC
T
d(on)
Turn-on
Delay
Time
30
T
r
Rise Time
12
T
d(off)
Turn-off Delay Time
80
T
f
Fall Time
Inductive Switching (25C)
V
GE
= 15V
V
Bus
= 400V
I
C
= 30A
R
G
= 6.8
15
ns
T
d(on)
Turn-on
Delay
Time
32
T
r
Rise Time
12
T
d(off)
Turn-off Delay Time
90
T
f
Fall Time
21
ns
E
on
Turn-on Switching Energy
0.3
E
off
Turn-off Switching Energy
Inductive Switching (125C)
V
GE
= 15V
V
Bus
= 400V
I
C
= 30A
R
G
= 6.8
0.8
mJ
E
on
includes diode reverse recovery
In accordance with JEDEC standard JESD24-1
Reverse diode ratings and characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
V
RRM
Maximum Peak Repetitive Reverse Voltage
600
V
T
j
= 25C
150
I
RM
Maximum Reverse Leakage Current
V
R
=600V
T
j
= 125C
500
A
I
F(A V)
Maximum Average Forward Current
50% duty cycle
Tc = 80C
15
A
I
F
= 15A
1.8
I
F
= 30A
1.6
V
F
Diode Forward Voltage
I
F
= 15A
T
j
= 150C
1.6
V
T
j
= 25C
40
t
rr
Reverse Recovery Time
T
j
= 100C
80
ns
T
j
= 25C
50
Q
rr
Reverse Recovery Charge
I
F
= 30A
V
R
= 400V
di/dt =200A/s
T
j
= 100C
120
nC
APTGF30H60T3
A
P
T
G
F
3
0
H
60T
3 R
e
v 0 S
e
pt
e
m
be
r
,
2004
APT website http://www.advancedpower.com
3 - 6
Temperature sensor NTC
Symbol Characteristic
Min Typ Max Unit
R
25
Resistance @ 25C
68
k
B
25/85
T
25
= 298.16 K
4080
K
-
=
T
T
B
R
R
T
1
1
exp
25
85
/
25
25
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT 0.9
R
thJC
Junction
to
Case
Diode
2.0
C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500 V
T
J
Operating junction temperature range
-40
150
T
STG
Storage Temperature Range
-40
125
T
C
Operating Case Temperature
-40
100
C
Torque Mounting torque
To heatsink
M4
4.7 N.m
Wt Package
Weight
110 g
Package outline
17
12
28
1
T: Thermistor temperature
R
T
: Thermistor value at T
APTGF30H60T3
A
P
T
G
F
3
0
H
60T
3 R
e
v 0 S
e
pt
e
m
be
r
,
2004
APT website http://www.advancedpower.com
4 - 6
Typical Performance Curve
Output characteristics (V
GE
=15V)
T
J
=-55C
T
J
=25C
T
J
=125C
0
30
60
90
120
0
1
2
3
4
I
c
, C
o
lle
c
t
o
r
C
u
r
r
e
n
t
(
A
)
V
CE
, Collector to Emitter Voltage (V)
250s Pulse Test
< 0.5% Duty cycle
Transfer Characteristics
T
J
=-55C
T
J
=25C
T
J
=125C
0
25
50
75
100
0
1
2
3
4
5
6
7
8
9
10
V
GE
, Gate to Emitter Voltage (V)
Ic
, C
o
lle
c
t
o
r
C
u
r
r
e
n
t
(
A
)
250s Pulse Test
< 0.5% Duty cycle
Ic=60A
Ic=30A
Ic=15A
0
1
2
3
4
5
6
7
8
6
8
10
12
14
16
V
GE
, Gate to Emitter Voltage (V)
V
CE
, C
o
lle
c
t
o
r
t
o
E
m
it
t
e
r
V
o
lt
a
g
e
(
V
) On state Voltage vs Gate to Emitter Volt.
T
J
= 25C
250s Pulse Test
< 0.5% Duty cycle
Ic=60A
Ic=30A
Ic=15A
0
0.5
1
1.5
2
2.5
3
3.5
4
-50
-25
0
25
50
75
100
125
T
J
, Junction Temperature (C)
V
CE
, Co
ll
e
c
t
o
r
t
o
E
m
it
t
e
r
V
o
l
t
a
g
e
(
V
) On state Voltage vs Junction Temperature
250s Pulse Test
< 0.5% Duty cycle
V
GE
= 15V
0.70
0.80
0.90
1.00
1.10
1.20
-50
-25
0
25
50
75
100 125
T
J
, Junction Temperature (C)
Co
ll
e
c
t
o
r
t
o
E
m
it
t
e
r
Br
e
a
k
d
o
w
n
V
o
l
t
ag
e (N
o
r
m
a
l
i
z
e
d
)
Breakdown Voltage vs Junction Temp.
0
10
20
30
40
50
60
-50 -25
0
25
50
75
100 125 150
T
C
, Case Temperature (C)
Ic
,
DC
Co
lle
c
t
o
r
Cu
r
r
e
n
t
(
A
)
DC Collector Current vs Case Temperature
Gate Charge
V
CE
=120V
V
CE
=300V
V
CE
=480V
0
2
4
6
8
10
12
14
16
18
0
20
40
60
80
100
120
Gate Charge (nC)
V
GE
,
Gat
e
to
E
m
i
t
ter
V
o
l
t
ag
e
(V
)
I
C
= 30A
T
J
= 25C
Output Characteristics (V
GE
=10V)
T
J
=-55C
T
J
=25C
T
J
=125C
0
25
50
75
100
0
1
2
3
4
I
c
,
C
o
l
l
e
c
t
o
r C
u
rre
nt
(
A
)
V
CE
, Collector to Emitter Voltage (V)
250s Pulse Test
< 0.5% Duty cycle
APTGF30H60T3
A
P
T
G
F
3
0
H
60T
3 R
e
v 0 S
e
pt
e
m
be
r
,
2004
APT website http://www.advancedpower.com
5 - 6
V
GE
= 15V
10
20
30
40
50
0
10
20
30
40
50
60
70
I
CE
, Collector to Emitter Current (A)
td
(o
n
)
,
T
u
r
n
-O
n
D
e
l
a
y
T
i
m
e
(n
s
)
Turn-On Delay Time vs Collector Current
Tj = 125C
V
CE
= 400V
R
G
= 6.8
V
GE
=15V,
T
J
=25C
V
GE
=15V,
T
J
=125C
25
50
75
100
125
0
10
20
30
40
50
60
70
I
CE
, Collector to Emitter Current (A)
td
(o
f
f),
T
u
r
n
-
O
ff
D
e
l
a
y
T
i
m
e
(
n
s
)
Turn-Off Delay Time vs Collector Current
V
CE
= 400V
R
G
= 6.8
V
GE
=15V,
T
J
=125C
0
10
20
30
40
50
0
10
20
30
40
50
60
70
I
CE
, Collector to Emitter Current (A)
t
r
,
R
i
se T
i
m
e
(
n
s)
Current Rise Time vs Collector Current
V
CE
= 400V
R
G
= 6.8
T
J
= 25C
T
J
= 125C
0
10
20
30
40
50
0
10
20
30
40
50
60
70
I
CE
, Collector to Emitter Current (A)
tf,
F
a
l
l
T
i
m
e
(n
s
)
Current Fall Time vs Collector Current
V
CE
= 400V, V
GE
= 15V, R
G
= 6.8
T
J
=125C,
V
GE
=15V
0
0.25
0.5
0.75
1
0
10
20
30
40
50
60
70
I
CE
, Collector to Emitter Current (A)
E
on
,
T
u
r
n
-
O
n
E
n
er
g
y
L
o
ss (
m
J)
Turn-On Energy Loss vs Collector Current
V
CE
= 400V
R
G
= 6.8
T
J
= 125C
0
0.5
1
1.5
2
0
10
20
30
40
50
60
70
I
CE
, Collector to Emitter Current (A)
E
of
f
,
T
u
r
n
-
o
f
f
E
n
er
g
y
L
o
ss
(
m
J
)
Turn-Off Energy Loss vs Collector Current
V
CE
= 400V
V
GE
= 15V
R
G
= 6.8
Eon, 30A
Eoff, 30A
0
0.25
0.5
0.75
1
0
5
10
15
20
25
Gate Resistance (Ohms)
Switching Energy Losses vs Gate Resistance
S
w
i
t
ch
i
n
g
E
n
er
g
y
L
o
s
ses (
m
J)
V
CE
= 400V
V
GE
= 15V
T
J
= 125C
0
10
20
30
40
50
60
70
0
100
200
300
400
500
600
I
C
, C
o
lle
c
t
o
r
C
u
r
r
e
n
t
(
A
)
Minimum Switching Safe Operating Area
V
CE
, Collector to Emitter Voltage (V)
APTGF30H60T3
A
P
T
G
F
3
0
H
60T
3 R
e
v 0 S
e
pt
e
m
be
r
,
2004
APT website http://www.advancedpower.com
6 - 6
Cies
Cres
Coes
10
100
1000
10000
0
10
20
30
40
50
C
,
C
a
p
a
c
i
ta
n
c
e
(p
F
)
Capacitance vs Collector to Emitter Voltage
V
CE
, Collector to Emitter Voltage (V)
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0.00001
0.0001
0.001
0.01
0.1
1
Rectangular Pulse Duration (Seconds)
T
h
e
r
m
a
l Im
p
e
d
a
n
c
e
(
C
/
W
)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Operating Frequency vs Collector Current
hard
switching
ZCS
ZVS
0
40
80
120
160
200
240
280
0
10
20
30
40
50
I
C
, Collector Current (A)
F
ma
x
,
Op
er
at
i
n
g
F
r
e
q
u
e
n
c
y (
k
H
z
)
V
CE
= 400V
D = 50%
R
G
= 6.8
T
J
= 125C
T
C
= 75C
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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