APTC60DAM18CTG
A
P
T
C
60
D
A
M
18C
T
G
R
e
v 2 O
c
t
obe
r
,
2005
APT website http://www.advancedpower.com
1 7
CR1
VBUS
NTC2
0/VBU S
VBUS SENSE
G2
S2
NTC1
Q 2
OUT
VBUS
OUT
OUT
NTC2
NTC1
0/VBUS
S2
S2
G2
G2
VBUS
SENSE
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol Parameter
Max
ratings
Unit
V
DSS
Drain - Source Breakdown Voltage
600
V
T
c
= 25C
143
I
D
Continuous
Drain
Current
T
c
= 80C
107
I
DM
Pulsed Drain current
572
A
V
GS
Gate - Source Voltage
30
V
R
DSon
Drain - Source ON Resistance
18
m
P
D
Maximum Power Dissipation
T
c
= 25C
833
W
I
AR
Avalanche current (repetitive and non repetitive)
20
A
E
AR
Repetitive Avalanche Energy
1
E
AS
Single Pulse Avalanche Energy
1800
mJ
V
DSS
= 600V
R
DSon
= 18m
max @ Tj = 25C
I
D
= 143A @ Tc = 25C
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Features
-
Ultra low R
DSon
-
Low Miller capacitance
-
Ultra low gate charge
-
Avalanche energy rated
FWD SiC Schottky Diode
-
Zero reverse recovery
-
Zero forward recovery
-
Temperature Independent switching behavior
-
Positive temperature coefficient on VF
Kelvin source for easy drive
Very low stray inductance
- Symmetrical design
- Lead frames for power connections
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS compliant
Boost chopper
SiC FWD diode
Super Junction
MOSFET Power Module
APTC60DAM18CTG
A
P
T
C
60
D
A
M
18C
T
G
R
e
v 2 O
c
t
obe
r
,
2005
APT website http://www.advancedpower.com
2 7
All ratings @ T
j
= 25C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
V
GS
= 0V,V
DS
= 600V
T
j
= 25C
100
I
DSS
Zero Gate Voltage Drain Current
V
GS
= 0V,V
DS
= 600V
T
j
= 125C
1000
A
R
DS(on)
Drain Source on Resistance
V
GS
= 10V, I
D
= 71.5A
18
m
V
GS(th)
Gate
Threshold
Voltage
V
GS
= V
DS
, I
D
=
4mA
2.1 3 3.9 V
I
GSS
Gate Source Leakage Current
V
GS
= 20
V, V
DS
= 0V
200
nA
Dynamic Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
C
iss
Input
Capacitance
28
C
oss
Output
Capacitance
10.2
C
rss
Reverse Transfer Capacitance
V
GS
= 0V
V
DS
= 25V
f = 1MHz
0.85
nF
Q
g
Total gate Charge
1036
Q
gs
Gate Source Charge
116
Q
gd
Gate Drain Charge
V
GS
= 10V
V
Bus
= 300V
I
D
= 143A
444
nC
T
d(on)
Turn-on
Delay
Time
21
T
r
Rise Time
30
T
d(off)
Turn-off Delay Time
283
T
f
Fall Time
Inductive switching @ 125C
V
GS
= 15V
V
Bus
= 400V
I
D
= 143A
R
G
= 1.2
84
ns
E
on
Turn-on Switching Energy
1608
E
off
Turn-off Switching Energy
Inductive switching @ 25C
V
GS
= 15V, V
Bus
= 400V
I
D
= 143A,
R
G
= 1.2
3920
J
E
on
Turn-on Switching Energy
2630
E
off
Turn-off Switching Energy
Inductive switching @ 125C
V
GS
= 15V, V
Bus
= 400V
I
D
= 143A,
R
G
= 1.2
4824
J
Chopper diode ratings and characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
V
RRM
Maximum Peak Repetitive Reverse Voltage
600
V
T
j
= 25C
2
I
RM
Maximum Reverse Leakage Current
V
R
=600V
T
j
= 175C
10
mA
I
F
DC Forward Current
Tc = 125C
100
A
T
j
= 25C
1.6
1.8
V
F
Diode Forward Voltage
I
F
= 100A
T
j
= 175C
2.0
2.4
V
Q
C
Total Capacitive Charge
I
F
= 100A, V
R
= 300V
di/dt =2400A/s
140 nC
f = 1MHz, V
R
= 200V
650
C Total
Capacitance
f = 1MHz, V
R
= 400V
500
pF
APTC60DAM18CTG
A
P
T
C
60
D
A
M
18C
T
G
R
e
v 2 O
c
t
obe
r
,
2005
APT website http://www.advancedpower.com
3 7
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
Transistor 0.15
R
thJC
Junction to Case Thermal Resistance
Diode
0.28
C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
V
T
J
Operating junction temperature range
-40 150
T
STG
Storage Temperature Range
-40
125
T
C
Operating Case Temperature
-40
100
C
Torque Mounting torque
To heatsink
M5
1.5
4.7
N.m
Wt Package
Weight
160 g
Temperature sensor NTC
(see application note APT0406 on www.advancedpower.com for more information).
Symbol Characteristic
Min Typ Max Unit
R
25
Resistance @ 25C
50
k
B
25/85
T
25
= 298.15 K
3952
K
-
=
T
T
B
R
R
T
1
1
exp
25
85
/
25
25
SP4 Package outline
(dimensions in mm)
ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :
T: Thermistor temperature
R
T
: Thermistor value at T
APTC60DAM18CTG
A
P
T
C
60
D
A
M
18C
T
G
R
e
v 2 O
c
t
obe
r
,
2005
APT website http://www.advancedpower.com
4 7
Typical CoolMOS Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
T
h
er
m
a
l
I
m
p
e
d
a
n
ce
(
C
/
W
)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
4V
4.5V
5V
5.5V
6V
6.5V
0
100
200
300
400
500
600
700
800
0
5
10
15
20
25
V
DS
, Drain to Source Voltage (V)
I
D
,
Dr
a
i
n
Cu
r
r
e
n
t
(
A
)
V
GS
=15&10V
Low Voltage Output Characteristics
Transfert Characteristics
T
J
=-55C
T
J
=25C
T
J
=125C
0
90
180
270
360
450
540
0
1
2
3
4
5
6
7
V
GS
, Gate to Source Voltage (V)
I
D
,
Dr
a
i
n
Cu
r
r
e
n
t
(
A
)
V
DS
> I
D
(on)xR
DS
(on)MAX
250s pulse test @ < 0.5 duty cycle
R
DS
(on) vs Drain Current
V
GS
=10V
V
GS
=20V
0.9
0.95
1
1.05
1.1
0
40
80
120
160
200
240
I
D
, Drain Current (A)
R
DS
(
o
n
)
D
r
ai
n
t
o
S
o
u
r
ce O
N
R
esi
st
an
ce
Normalized to
V
GS
=10V @ 71.5A
0
20
40
60
80
100
120
140
160
25
50
75
100
125
150
T
C
, Case Temperature (C)
I
D
,
DC
D
r
a
i
n
Cu
r
r
e
n
t
(
A
)
DC Drain Current vs Case Temperature
APTC60DAM18CTG
A
P
T
C
60
D
A
M
18C
T
G
R
e
v 2 O
c
t
obe
r
,
2005
APT website http://www.advancedpower.com
5 7
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25
0
25 50 75 100 125 150
T
J
, Junction Temperature (C)
Breakdown Voltage vs Temperature
BV
DS
S
,
D
r
ai
n
t
o
S
o
u
r
ce B
r
eakd
o
w
n
V
o
l
t
ag
e (
N
o
r
m
a
l
i
z
e
d
)
ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-50 -25 0
25 50 75 100 125 150
T
J
, Junction Temperature (C)
R
DS
(
o
n
)
,
D
r
a
i
n
t
o
S
o
u
r
ce O
N
r
esi
st
an
ce
(
N
or
m
a
l
i
z
e
d)
V
GS
=10V
I
D
= 143A
Threshold Voltage vs Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25
0
25 50 75 100 125 150
T
C
, Case Temperature (C)
V
GS
(
T
H
)
,
Thr
e
s
h
o
l
d
V
o
l
t
a
g
e
(
N
or
m
a
l
i
z
e
d)
Maximum Safe Operating Area
DC line
10 ms
1 ms
100s
1
10
100
1000
1
10
100
1000
V
DS
, Drain to Source Voltage (V)
I
D
,
D
r
a
i
n
C
u
r
r
e
nt
(
A
)
limited by R
DS
on
Single pulse
T
J
=150C
Ciss
Crss
Coss
10
100
1000
10000
100000
0
10
20
30
40
50
V
DS
, Drain to Source Voltage (V)
C
,
C
a
p
aci
t
a
n
ce (
p
F
)
Capacitance vs Drain to Source Voltage
V
DS
=120V
V
DS
=300V
V
DS
=480V
0
2
4
6
8
10
12
14
0
200
400
600
800
1000 1200
Gate Charge (nC)
V
GS
,
G
a
t
e
t
o
S
o
u
r
ce V
o
l
t
ag
e
(
V
)
Gate Charge vs Gate to Source Voltage
I
D
=143A
T
J
=25C
APTC60DAM18CTG
A
P
T
C
60
D
A
M
18C
T
G
R
e
v 2 O
c
t
obe
r
,
2005
APT website http://www.advancedpower.com
6 7
T
J
=25C
T
J
=150C
1
10
100
1000
0.3
0.5
0.7
0.9
1.1
1.3
1.5
V
SD
, Source to Drain Voltage (V)
I
DR
,
R
ever
se
D
r
ai
n
C
u
r
r
en
t
(
A
)
Source to Drain Diode Forward Voltage
Delay Times vs Current
td(on)
td(off)
0
50
100
150
200
250
300
350
0
40
80
120 160
200 240
I
D
, Drain Current (A)
t
d(o
n
)
a
nd t
d(
off
)
(n
s
)
V
DS
=400V
R
G
=1.2
T
J
=125C
L=100H
Rise and Fall times vs Current
t
r
t
f
0
20
40
60
80
100
120
0
40
80
120
160
200
240
I
D
, Drain Current (A)
t
r
a
nd t
f
(n
s
)
V
DS
=400V
R
G
=1.2
T
J
=125C
L=100H
Switching Energy vs Current
E
on
E
off
0
1
2
3
4
5
6
7
8
9
10
0
40
80
120
160
200
240
I
D
, Drain Current (A)
S
w
it
c
h
in
g
E
n
e
r
g
y
(
m
J
)
V
DS
=400V
R
G
=1.2
T
J
=125C
L=100H
E
on
E
off
0
5
10
15
20
0
2.5
5
7.5
10
12.5
Gate Resistance (Ohms)
S
w
i
t
ch
i
n
g
E
n
er
g
y
(
m
J)
Switching Energy vs Gate Resistance
V
DS
=400V
I
D
=143A
T
J
=125C
L=100H
Hard
switching
ZCS
ZVS
0
20
40
60
80
100
120
140
160
30
50
70
90
110
130
I
D
, Drain Current (A)
Fr
e
que
nc
y
(
k
H
z
)
Operating Frequency vs Drain Current
V
DS
=400V
D=50%
R
G
=1.2
T
J
=125C
T
C
=75C
APTC60DAM18CTG
A
P
T
C
60
D
A
M
18C
T
G
R
e
v 2 O
c
t
obe
r
,
2005
APT website http://www.advancedpower.com
7 7
Typical SiC Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
The
r
m
a
l
I
m
pe
da
n
c
e
(
C
/
W
)
Forward Characteristics
T
J
=25C
T
J
=75C
T
J
=125C
T
J
=175C
0
50
100
150
200
0
0.5
1
1.5
2
2.5
3
3.5
V
F
Forward Voltage (V)
I
F
F
o
r
w
a
r
d C
u
r
r
e
nt
(
A
)
Reverse Characteristics
T
J
=25C
T
J
=75C
T
J
=125C
T
J
=175C
0
500
1000
1500
2000
200
300
400
500
600
700
800
V
R
Reverse Voltage (V)
I
R
R
eve
r
s
e
C
u
r
r
en
t
(
A
)
Capacitance vs.Reverse Voltage
0
1000
2000
3000
4000
1
10
100
1000
V
R
Reverse Voltage
C
,
C
a
p
aci
t
a
n
ce
(
p
F
)
"COOLMOSTM comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon
Technologies AG".
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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