050-7425 Rev B 10-2003
APT80GP60B2
600V
MAXIMUM RATINGS
All Ratings: T
C
= 25C unless otherwise specified.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
STATIC ELECTRICAL CHARACTERISTICS
The POWER MOS 7
IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
Low Conduction Loss
200 kHz operation @ 400V, 45A
Low Gate Charge
100 kHz operation @ 400V, 72A
Ultrafast Tail Current shutoff
SSOA rated
POWER MOS 7
IGBT
MIN
TYP
MAX
600
3
4.5
6
2.2
2.7
2.1
1.0
5
100
Symbol
BV
CES
V
GE(TH)
V
CE(ON)
I
CES
I
GES
UNIT
Volts
mA
nA
Symbol
V
CES
V
GE
V
GEM
I
C1
I
C2
I
CM
SSOA
P
D
T
J
,T
STG
T
L
APT80GP60B2
600
20
30
100
100
330
330A @ 600V
1041
-55 to 150
300
UNIT
Volts
Amps
Watts
C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current
7
@ T
C
= 25C
Continuous Collector Current
7
@ T
C
= 110C
Pulsed Collector Current
1
@ T
C
= 25C
Switching Safe Operating Area @ T
J
= 150C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 1.0mA)
Gate Threshold Voltage (V
CE
= V
GE
, I
C
= 2.5mA, T
j
= 25C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 80A, T
j
= 25C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 80A, T
j
= 125C)
Collector Cut-off Current (V
CE
= 600V, V
GE
= 0V, T
j
= 25C)
2
Collector Cut-off Current (V
CE
= 600V, V
GE
= 0V, T
j
= 125C)
2
Gate-Emitter Leakage Current (V
GE
= 20V)
T-Max
TM
G
C
E
G
C
E
050-7425 Rev B 10-2003
APT80GP60B2
DYNAMIC CHARACTERISTICS
Symbol
C
ies
C
oes
C
res
V
GEP
Q
g
Q
ge
Q
gc
SSOA
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
Test Conditions
Capacitance
V
GE
= 0V, V
CE
= 25V
f = 1 MHz
Gate Charge
V
GE
= 15V
V
CE
= 300V
I
C
= 80A
T
J
= 150C, R
G
= 5
,
V
GE
=
15V, L = 100H,V
CE
= 600V
Inductive Switching (25C)
V
CC
= 400V
V
GE
= 15V
I
C
= 80A
R
G
= 5
T
J
= +25C
Inductive Switching (125C)
V
CC
= 400V
V
GE
= 15V
I
C
= 80A
R
G
= 5
T
J
= +125C
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge
3
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Switching Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
4
Turn-on Switching Energy (Diode)
5
Turn-off Switching Energy
6
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
4
Turn-on Switching Energy (Diode)
5
Turn-off Switching Energy
6
MIN
TYP
MAX
9840
735
40
7.5
280
65
85
330
29
40
116
78
795
1536
1199
29
40
149
84
795
2153
1690
UNIT
pF
V
nC
A
ns
J
ns
J
UNIT
C/W
gm
MIN
TYP
MAX
.12
N/A
5.9
Characteristic
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
Symbol
R
JC
R
JC
W
T
THERMAL AND MECHANICAL CHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
ces
includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 E
on1
is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure 24.)
5 E
on2
is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. A Combi device is used for the clamping diode as shown in the E
on2
test circuit. (See Figures 21, 22.)
6 E
off
is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
7 Countinous current limited by package lead temperature.
APT Reserves the right to change, without notice, the specifications and information contained herein.
050-7425 Rev B 10-2003
TYPICAL PERFORMANCE CURVES
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(V
GE
= 15V)
FIGURE 2, Output Characteristics (V
GE
= 10V)
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
GATE CHARGE (nC)
FIGURE 3, Transfer Characteristics
FIGURE 4, Gate Charge
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
T
J
, Junction Temperature (C)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
FIGURE 6, On State Voltage vs Junction Temperature
T
J
, JUNCTION TEMPERATURE (C)
T
C
, CASE TEMPERATURE (C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
FIGURE 8, DC Collector Current vs Case Temperature
BV
CES
, COLLECTOR-TO-EMITTER BREAKDOWN
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
VOLTAGE (NORMALIZED)
I
C,
DC COLLECTOR CURRENT(A)
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
APT80GP60B2
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
3
0
1
2
3
4
5
6
7
8
9
10
0
50
100
150
200
250
300
6
8
10
12
14
16
-50
-25
0
25
50
75
100
125
-50
-25
0
25
50
75
100 125
-50
-25
0
25
50
75 100 125 150
TJ = 25C.
250s PULSE TEST
<0.5 % DUTY CYCLE
T
C
=-55C
T
C
=125C
T
C
=25C
V
CE
=480V
V
CE
=300V
V
CE
=120V
VGE = 10V.
250s PULSE TEST
<0.5 % DUTY CYCLE
VGE = 15V.
250s PULSE TEST
<0.5 % DUTY CYCLE
VGE = 15V.
250s PULSE TEST
<0.5 % DUTY CYCLE
IC = 80A
TJ = 25C
TJ = 25C
TJ = -55C
TJ = 125C
T
C
=-55C
T
C
=25C
T
C
=125C
250s PULSE TEST
<0.5 % DUTY CYCLE
I
C=
40A
I
C=
80A
I
C=
160A
I
C=
160A
I
C=
80A
I
C=
40A
120
100
80
60
40
20
0
500
400
300
200
100
0
3.5
3
2.5
2
1.5
1
0.5
0
1.2
1.15
1.10
1.05
1.0
0.95
0.9
0.85
0.8
120
100
80
60
40
20
0
16
14
12
10
8
6
4
2
0
3
2.5
2
1.5
1
0.5
0
350
300
250
200
150
100
50
0
050-7425 Rev B 10-2003
APT80GP60B2
T
J
=
125C, V
GE
=
10V
or 15V
T
J
=
25C, V
GE
=
10V
or 15V
V
GE
=
15V,T
J
=125C
V
GE
= 15V
V
GE
=
15V,T
J
=25C
T
J
=
25C, V
GE
=
10V
or 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
R
G
, GATE RESISTANCE (OHMS)
T
J
, JUNCTION TEMPERATURE (C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
E
on2
40A
E
off
80A
E
on2
80A
E
on2
120A
E
off
120A
E
off
40A
E
on2
40A
E
off
80A
E
on2
80A
E
on2
120A
E
off
120A
E
off
40A
T
J
=
25 or 125C,V
GE
=
15V
SWITCHING ENERGY LOSSES (J)
E
ON2
, TURN ON ENERGY LOSS (J)
t
r,
RISE TIME (ns)
t
d(ON)
, TURN-ON DELAY TIME (ns)
SWITCHING ENERGY LOSSES (J)
E
OFF
, TURN OFF ENERGY LOSS (J)
t
f,
FALL TIME (ns)
t
d
(OFF)
, TURN-OFF DELAY TIME (ns)
T
J
=125C, V
GE
=15V
T
J
=
125C, V
GE
=
10V
or 15V
T
J
= 25C, V
GE
=15V
V
CE
= 400V
T
J
=
25C
,
T
J
=125C
R
G
= 5
L = 100 H
V
CE
= 400V
R
G
=
5
L = 100 H
10
30
50
70
90
110
130
10
30
50
70
90
110
130
10
30
50
70
90
110
130
10
30
50
70
90
110
130
10
30
50
70
90
110
130
10
30
50
70
90
110
130
5
10
15
20
25
30
0
25
50
75
100
125
VCE = 400V
VGE = +15V
RG = 5
40
35
30
25
20
15
10
5
0
70
60
50
40
30
20
10
0
4000
3500
3000
2500
2000
1500
1000
500
0
6000
5000
4000
3000
2000
1000
0
VCE = 400V
VGE = +15V
T
J
= 125C
V
CE
= 400V
R
G
=
5
L = 100 H
V
CE
= 400V
R
G
=
5
L = 100 H
180
160
140
120
100
80
60
40
20
0
140
120
100
80
60
40
20
0
4000
3000
2000
1000
0
4000
3000
2000
1000
0
V
CE
= 400V
R
G
=
5
L = 100 H
V
CE
= 400V
R
G
=
5
L = 100 H
050-7425 Rev B 10-2003
10
40
70
100
130
160
380
100
50
10
TYPICAL PERFORMANCE CURVES
20,000
10,000
5,000
1,000
500
100
50
10
300
250
200
150
100
50
0
C, CAPACITANCE (
P
F)
I
C
, COLLECTOR CURRENT (A)
F
MAX
, OPERATING FREQUENCY (kHz)
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
V
CE
, COLLECTOR TO EMITTER VOLTAGE
Figure 17, Capacitance vs Collector-To-Emitter Voltage
Figure 18, Minimim Switching Safe Operating Area
0
10
20
30
40
50
0
100
200
300
400
500
600
700
I
C
, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector
Current
TJ = 125
C
TC = 75
C
D = 50 %
VCE = 400V
RG = 5
Cies
Coes
APT80GP60B2
Cres
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
0.00791
0.0475
0.0656
0.00354F
0.0307F
0.361F
Power
(watts)
Junction
temp (
C)
RC MODEL
Case temperature(
C)
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x Z
JC + TC
t1
t2
P
DM
Z
JC
, THERMAL IMPEDANCE (C/W)
0.3
0.9
0.7
0.1
0.05
0.5
SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19A, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
f
max
=
min(f
max1
,
f
max2
)
0.05
f
max1
=
t
d(on)
+
t
r
+
t
d(off)
+
t
f
P
diss
P
cond
E
on2
+ E
off
f
max2
=
P
diss
=
T
J
T
C
R
JC
050-7425 Rev B 10-2003
APT80GP60B2
Figure 22, Turn-on Switching Waveforms and Definitions
Figure 23, Turn-off Switching Waveforms and Definitions
*DRIVER SAME TYPE AS D.U.T.
I
C
V
CLAMP
100uH
V
TEST
A
A
B
D.U.T.
DRIVER*
V
CE
Figure 24, E
ON1
Test Circuit
T-MAX
(B2) Package Outline
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Dimensions in Millimeters and (Inches)
2-Plcs.
Collector
Emitter
Gate
Collector (Cathode)
I
C
A
D.U.T.
APT60DF60
V
CE
Figure 21, Inductive Switching Test Circuit
CC
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
T
J
= 125 C
Collector Voltage
Gate Voltage
Collector Current
90%
t
d(off)
90%
t
f
10%
0
Switching
Energy
T
J
= 125 C
10%
10%
5%
t
d(on)
90%
t
r
5 %
Switching
Energy
Collector Voltage
Collector Current
Gate Voltage
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