G
C
E
052-6259 Rev A
APT60GF120JRD
1200V
100A
The Fast IGBT
TM
is a new generation of high voltage power IGBTs. Using Non-
Punch Through Technology the Fast IGBTTM combined with an APT free-
wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior
ruggedness and fast switching speed.
Low Forward Voltage Drop
High Freq. Switching to 20KHz
Low Tail Current
Ultra Low Leakage Current
RBSOA and SCSOA Rated
Ultrafast Soft Recovery Antiparallel Diode
Fast IGBT
& FRED
SOT-227
G
E
E
C
ISOTOP
"UL Recognized"
PRELIMINAR
Y
APT60GF120JRD
1200
1200
20
100
60
200
120
520
-55 to 150
300
MAXIMUM RATINGS (IGBT)
All Ratings: T
C
= 25
C unless otherwise specified.
MIN
TYP
MAX
1200
4.5
5.5
6.5
2.9
3.4
3.5
4.1
1.0
TBD
100
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 1.0mA)
Gate Threshold Voltage (V
CE
= V
GE
, I
C
= 700
A, T
j
= 25
C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 40A, T
j
= 25
C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 40A, T
j
= 125
C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 25
C)
2
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 125
C)
2
Gate-Emitter Leakage Current (V
GE
=
20V, V
CE
= 0V)
Symbol
BV
CES
V
GE
(TH)
V
CE
(ON)
I
CES
I
GES
STATIC ELECTRICAL CHARACTERISTICS (IGBT)
UNIT
Volts
mA
nA
Symbol
V
CES
V
CGR
V
GE
I
C1
I
C2
I
CM1
I
CM2
P
D
T
J
,T
STG
T
L
Parameter
Collector-Emitter Voltage
Collector-Gate Voltage (R
GE
= 20K
)
Gate-Emitter Voltage
Continuous Collector Current @ T
C
= 25
C
Continuous Collector Current @ T
C
= 90
C
Pulsed Collector Current
1
@ T
C
= 25
C
Pulsed Collector Current
1
@ T
C
= 90
C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
UNIT
Volts
Amps
Watts
C
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
Bend, Oregon 97702 -1035
Phone: (541) 382-8028
FAX: (541) 388-0364
EUROPE
Avenue J.F. Kennedy Bt B4 Parc Cadra Nord
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
APT Website - http://www.advancedpower.com
PRELIMINAR
Y
Symbol
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d
(on)
t
r
t
d
(off)
t
f
t
d
(on)
t
r
t
d
(off)
t
f
E
on
E
off
E
ts
t
d
(on)
t
r
t
d
(off)
t
f
E
ts
gfe
DYNAMIC CHARACTERISTICS (IGBT)
APT60GF120JRD
UNIT
C/W
oz
gm
lbin
Nm
MIN
TYP
MAX
0.24
0.66
40
1.03
29.2
10
1.1
Characteristic
Junction to Case (IGBT)
Junction to Case (FRED)
Junction to Ambient
Package Weight
Mounting Torque (
Mounting = 8-32 or 4mm Machine and Terminals = 4mm Machine
)
Symbol
R
JC
R
JA
W
T
Torque
THERMAL AND MECHANICAL CHARACTERISTICS (IGBT and FRED)
Test Conditions
Capacitance
V
GE
= 0V
V
CE
= 25V
f = 1 MHz
Gate Charge
V
GE
= 15V
V
CC
= 0.5V
CES
I
C
= I
C2
Resistive Switching (25
C)
V
GE
= 15V
V
CC
= 0.8V
CES
I
C
= I
C2
R
G
= 5
Inductive Switching (150
C)
V
CLAMP
(Peak)
= 0.66V
CES
V
GE
= 15V
I
C
= I
C2
R
G
= 5
T
J
= +150
C
Inductive Switching (25
C)
V
CLAMP
(Peak)
= 0.66V
CES
V
GE
= 15V
I
C
= I
C2
R
G
= 5
T
J
= +25
C
V
CE
= 20V, I
C
= I
C2
MIN
TYP
MAX
7200
9600
790
1100
420
630
690
55
390
60
205
295
210
55
130
750
80
9
10
19
55
145
650
70
17
6
UNIT
pF
nC
ns
ns
mJ
ns
mJ
S
052-6259 Rev A
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
4
Turn-off Switching Energy
Total Switching Losses
4
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Switching Losses
4
Forward Transconductance
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
2
Leakages include the FRED and IGBT.
3
See MIL-STD-750 Method 3471
4
Switching losses include the FRED and IGBT.
APT Reserves the right to change, without notice, the specifications and information contained herein.
052-6259 Rev A
APT60GF120JRD
PRELIMINAR
Y
Characteristic / Test Conditions
Maximum D.C. Reverse Voltage
Maximum Peak Repetitive Reverse Voltage
Maximum Working Peak Reverse Voltage
Maximum Average Forward Current (T
C
= 60
C, Duty Cycle = 0.5)
RMS Forward Current
Non-Repetitive Forward Surge Current (T
J
= 45
C, 8.3mS)
Symbol
V
R
V
RRM
V
RWM
I
F
(AV)
I
F
(RMS)
I
FSM
Symbol
V
F
Characteristic / Test Conditions
I
F
= 60A
Maximum Forward Voltage
I
F
= 120A
I
F
= 60A, T
J
= 150
C
STATIC ELECTRICAL CHARACTERISTICS (FRED)
UNIT
Volts
Amps
UNIT
Volts
MIN
TYP
MAX
2.5
2.0
2.0
APT60GF120JRD
1200
60
100
540
MAXIMUM RATINGS (FRED)
All Ratings: T
C
= 25
C unless otherwise specified.
ULTRAFAST SOFT RECOVERY PARALLEL DIODE
MIN
TYP
MAX
70
85
70
130
170
170
18
30
29
40
630
1820
12
12
900
600
UNIT
ns
Amps
nC
Volts
A/
s
Characteristic
Reverse Recovery Time, I
F
= 1.0A, di
F
/ dt
= -15A/
s, V
R
= 30V,
T
J
= 25
C
Reverse Recovery Time
T
J
= 25
C
I
F
= 60A, di
F
/dt
= -480A/
s, V
R
= 650V
T
J
= 100
C
Forward Recovery Time
T
J
= 25
C
I
F
= 60A, di
F
/dt
= 480A/
s, V
R
= 650V
T
J
= 100
C
Reverse Recovery Current
T
J
= 25
C
I
F
= 60A, di
F
/dt
= -480A/
s, V
R
= 650V
T
J
= 100
C
Recovery Charge
T
J
= 25
C
I
F
= 60A, di
F
/dt
= -480A/
s, V
R
= 650V
T
J
= 100
C
Forward Recovery Voltage
T
J
= 25
C
I
F
= 60A, di
F
/dt
= 480A/
s, V
R
= 650V
T
J
= 100
C
Rate of Fall of Recovery Current
T
J
= 25
C
I
F
= 60A, di
F
/dt
= -480A/
s, V
R
=650V
T
J
= 100
C
DYNAMIC CHARACTERISTICS (FRED)
Symbol
t
rr1
t
rr2
t
rr3
t
fr1
t
fr2
I
RRM1
I
RRM2
Q
rr1
Q
rr2
V
fr1
V
fr2
diM/dt
PRELIMINAR
Y
PRELIMINAR
Y
APT60GF120JRD
052-6259 Rev A
SOT-227 (ISOTOP
) Package Outline
PEARSON 411
CURRENT
TRANSFORMER
0.5 IRRM
di
F
/dt Adjust
30
H
D.U.T.
+15v
-15v
0v
Vr
4
3
1
2
5
5
0.75 IRRM
trr/Qrr
Waveform
Zero
6
1
2
3
4
6
di
F
/dt - Current Slew Rate, Rate of Forward
Current Change Through Zero Crossing.
I
F
- Forward Conduction Current
I
RRM
- Peak Reverse Recovery Current.
trr - Reverse Recovery Time Measured from Point of I
F
Qrr - Area Under the Curve Defined by I
RRM
and trr.
diM/dt - Maximum Rate of Current Change During the Trailing Portion of trr.
Current Falling Through Zero to a Tangent Line
{
diM/dt
}
Extrapolated Through Zero Defined by 0.75 and 0.50 I
RRM
.
6
Figure 25, Diode Reverse Recovery Test Circuit and Waveforms
Figure 8, Diode Reverse Recovery Waveform and Definitions
Qrr = 1/2
(
trr . I
RRM
)
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
* Emitter
Collector
Gate
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
* Emitter
Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
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