050-7250 Rev A 5-2004
MAXIMUM RATINGS
All Ratings: T
C
= 25C unless otherwise specified.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250A)
Drain-Source On-State Resistance
2
(V
GS
= 10V, I
D
= 31.5A)
Zero Gate Voltage Drain Current (V
DS
= 500V, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 400V, V
GS
= 0V, T
C
= 125C)
Gate-Source Leakage Current (V
GS
= 30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 5mA)
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
,T
STG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25C
Pulsed Drain Current
1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
C
= 25C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
1
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
Single Pulse Avalanche Energy
4
UNIT
Volts
Amps
Volts
Watts
W/C
C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Ohms
A
nA
Volts
MIN
TYP
MAX
500
0.060
25
250
100
2
4
APT50M60JVR
500
63
252
30
40
568
4.55
-55 to 150
300
63
50
3200
APT50M60JVR
500V 63A
0.060
G
D
S
Power MOS V
is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
also achieves faster switching speeds through optimized gate layout.
Popular SOT-227 Package
Avalanche Energy Rated
Faster Switching
Lower Leakage
POWER MOS V
MOSFET
SOT-227
G
S
S
D
ISOTOP
"UL Recognized"
DYNAMIC CHARACTERISTICS
APT50M60JVR
050-7250 Rev A 5-2004
Symbol
R
JC
R
JA
MIN
TYP
MAX
0.22
40
UNIT
C/W
Characteristic
Junction to Case
Junction to Ambient
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
on
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
6
Turn-off Switching Energy
Turn-on Switching Energy
6
Turn-off Switching Energy
Test Conditions
V
GS
= 0V
V
DS
= 25V
f
= 1 MHz
V
GS
= 10V
V
DD
= 250V
I
D
= 63A
@ 25C
RESISTIVE SWITCHING
V
GS
=
15V
V
DD
=
250V
I
D
=
63A
@ 25C
R
G
=
0.6
INDUCTIVE SWITCHING @ 25C
V
DD
=
333V, V
GS
= 15V
I
D
=
63A, R
G
=
5
INDUCTIVE SWITCHING @ 125C
V
DD
=
333V, V
GS
= 15V
I
D
=
63A, R
G
=
5
MIN
TYP
MAX
10600
1800
795
560
70
285
20
25
80
10
1235
2820
1700
2900
UNIT
pF
nC
ns
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZJC + TC
t1
t2
P
DM
SINGLE PULSE
Z
JC
, THERMAL IMPEDANCE (C/W)
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.25
0.20
0.15
0.10
0.05
0
0.5
0.1
0.3
0.7
0.9
0.05
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
1
(Body Diode)
Diode Forward Voltage
2
(V
GS
= 0V, I
S
= -
63A
)
Reverse Recovery Time (I
S
= -
63A
, dl
S
/dt = 100A/s)
Reverse Recovery Charge (I
S
= -
63A
, dl
S
/dt = 100A/s)
Peak Diode Recovery
dv
/
dt
5
UNIT
Amps
Volts
ns
C
V/ns
MIN
TYP
MAX
63
252
1.3
680
17
8
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
dv
/
dt
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting T
j
=
+25C, L = 1.61mH, R
G
=
25
, Peak I
L
= 63A
5
dv
/
dt
numbers reflect the limitations of the test circuit rather than the
device itself.
I
S
-
I
D
63A
di
/
dt
700A/s
V
R
500V
T
J
150
C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
050-7250 Rev A 5-2004
Typical Performance Curves
APT50M60JVR
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
I
D
, DRAIN CURRENT (AMPERES)
I
D
, DRAIN CURRENT (AMPERES)
(NORMALIZED)
V
GS
(TH), THRESHOLD VOLTAGE
BV
DSS
, DRAIN-TO-SOURCE BREAKDOWN
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
I
D
, DRAIN CURRENT (AMPERES)
(NORMALIZED)
VOLTAGE (NORMALIZED)
6.5V
7.5V
5.5V
7V
TJ = +125C
TJ = +25C
TJ = -55C
VDS> ID (ON) x RDS (ON)MAX.
250SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 4, TRANSFER CHARACTERISTICS
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
T
C
, CASE TEMPERATURE (C)
T
J
, JUNCTION TEMPERATURE (C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
T
J
, JUNCTION TEMPERATURE (C)
T
C
, CASE TEMPERATURE (C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
6V
0
5
10
15
20
25
30
0
1
2
3
4
5
6
0
20
40
60
80
100 120 140 160
25
50
75
100
125
150
-50 -25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75 100 125 150
140
120
100
80
60
40
20
0
70
60
50
40
30
20
10
2.5
2.0
1.5
1.0
0.5
0.0
I
D = 31.5A
V
GS = 10V
200
180
160
140
120
100
80
60
40
20
0
1.40
1.30
1.20
1.10
1.00
0.90
0.80
1.15
1.10
1.05
1.00
0.95
0.90
0.85
1.2
1.1
1.0
0.9
0.8
0.7
0.6
8V
VGS=10V
VGS=20V
NORMALIZED TO
V
GS
= 10V @ 31.5A
VGS =15 & 10V
0.0516
0.149
0.0198
0.0260F
0.448F
42.3F
Power
(watts)
Junction
temp. (
C)
RC MODEL
Case temperature. (
C)
APT50M60JVR
050-7250 Rev A 5-2004
Crss
Ciss
Coss
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Q
g
, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPERES)
I
DR
, REVERSE DRAIN CURRENT (AMPERES)
C
,
CAPACITANCE (pF)
1
10
100
500
0
10
20
30
40
50
0
100 200 300 400 500 600 700 800
0.3
0.5
0.7
0.9
1.1
1.3
1.5
252
100
50
10
5
1
16
12
8
4
0
TC =+25C
TJ =+150C
SINGLE PULSE
10mS
1mS
100S
TJ =+150C
TJ =+25C
VDS = 250V
VDS = 100V
VDS = 400V
I
D = 63A
20,000
10,000
1,000
100
200
100
10
1
OPERATION HERE
LIMITED BY RDS (ON)
I
D
(A)
I
D
(A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
I
D
(A)
R
G
, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
V
DD = 333V
R
G = 5
T
J = 125C
L = 100H
E
on
E
off
t
r
t
f
SWITCHING ENERGY (
J)
t
d(on)
and t
d(off)
(ns)
SWITCHING ENERGY (
J)
t
r
and t
f
(ns)
10
30
50
70
90
110
130
10
30
50
70
90
110
130
10
30
50
70
90
110
130
0
5
10 15 20 25 30 35 40 45 50
V
DD = 333V
I
D = 63A
T
J = 125C
L = 100H
E
ON
includes
diode reverse recovery.
t
d(on)
t
d(off)
E
on
E
off
700
600
500
400
300
200
100
0
7,000
6,000
5,000
4,000
3,000
2,000
1,000
0
V
DD = 333V
R
G = 5
T
J = 125C
L = 100H
V
DD = 333V
R
G = 5
T
J = 125C
L = 100H
E
ON
includes
diode reverse recovery.
250
200
150
100
50
0
25,000
20,000
15,000
10,000
5,000
0
050-7250 Rev A 5-2004
Typical Performance Curves
APT50M60JVR
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
Switching Energy
Drain Current
Drain Voltage
Gate Voltage
T
J
125C
10%
0
t
d(off)
90%
t
f
90%
Drain Current
Drain Voltage
Gate Voltage
T
J
125C
10%
t
d(on)
90%
5%
t
r
5%
10%
Switching Energy
I
C
D.U.T.
APT60DF60
V
CE
Figure 20, Inductive Switching Test Circuit
V
DD
G
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
ISOTOP
is a Registered Trademark of SGS Thomson.
SOT-227 (ISOTOP
) Package Outline
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
* Source
Drain
Gate
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
* Source
Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
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