050-7613 Rev B 7-2005
APT50GN60BDQ2(G)
TYPICAL PERFORMANCE CURVES
MAXIMUM RATINGS
All Ratings: T
C
= 25C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 4mA)
Gate Threshold Voltage (V
CE
= V
GE
, I
C
= 800A, T
j
= 25C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 50A, T
j
= 25C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 50A, T
j
= 125C)
Collector Cut-off Current (V
CE
= 600V, V
GE
= 0V, T
j
= 25C)
2
Collector Cut-off Current (V
CE
= 600V, V
GE
= 0V, T
j
= 125C)
2
Gate-Emitter Leakage Current (V
GE
= 20V)
Intergrated Gate Resistor
Symbol
V
(BR)CES
V
GE(TH)
V
CE(ON)
I
CES
I
GES
R
G(int)
Units
Volts
A
nA
Symbol
V
CES
V
GE
I
C1
I
C2
I
CM
SSOA
P
D
T
J
,T
STG
T
L
APT50GN60BDQ2(G)
600
30
107
64
150
150A @ 600V
366
-55 to 175
300
UNIT
Volts
Amps
Watts
C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current
8
@ T
C
= 25C
Continuous Collector Current @ T
C
= 110C
Pulsed Collector Current
1
@ T
C
= 175C
Switching Safe Operating Area @ T
J
= 175C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
APT Website - http://www.advancedpower.com
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra
low V
CE(ON)
and are ideal for low frequency applications that require absolute minimum
conduction loss. Easy paralleling is a result of very tight parameter distribution and a
slightly positive V
CE(ON)
temperature coefficient. Low gate charge simplifies gate drive
design and minimizes losses.
600V Field Stop
Trench Gate: Low V
CE(on)
Easy Paralleling
6s Short Circuit Capability
175C Rated
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MIN
TYP
MAX
600
5.0
5.8
6.5
1.05
1.45
1.85
1.7
50
TBD
600
N/A
600V
APT50GN60BDQ2
APT50GN60BDQ2G*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
TO-2
47
G
C
E
C
E
G
050-7613 Rev B 7-2005
APT50GN60BDQ2(G)
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
2
For Combi devices, I
ces
includes both IGBT and FRED leakages
3
See MIL-STD-750 Method 3471.
4
E
on1
is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
5
E
on2
is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6
E
off
is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
7 R
G
is external gate resistance, not including R
G(int)
nor gate driver impedance. (MIC4452)
8 Continuous current limited by package lead temperature.
APT Reserves the right to change, without notice, the specifications and information contained herein.
THERMAL AND MECHANICAL CHARACTERISTICS
UNIT
C/W
gm
MIN
TYP
MAX
.41
.67
5.9
Characteristic
Junction to Case
(IGBT)
Junction to Case
(DIODE)
Package Weight
Symbol
R
JC
R
JC
W
T
DYNAMIC CHARACTERISTICS
Symbol
C
ies
C
oes
C
res
V
GEP
Q
g
Q
ge
Q
gc
SSOA
SCSOA
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
Test Conditions
Capacitance
V
GE
= 0V, V
CE
= 25V
f = 1 MHz
Gate Charge
V
GE
= 15V
V
CE
= 300V
I
C
= 50A
T
J
= 175C, R
G
= 4.3
7
, V
GE
=
15V, L = 100H,V
CE
= 600V
V
CC
= 360V, V
GE
= 15V,
T
J
= 150C, R
G
= 4.3
7
Inductive Switching (25C)
V
CC
= 400V
V
GE
= 15V
I
C
= 50A
R
G
= 4.3
7
T
J
= +25C
Inductive Switching (125C)
V
CC
= 400V
V
GE
= 15V
I
C
= 50A
R
G
= 4.3
7
T
J
= +125C
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge
3
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Switching Safe Operating Area
Short Circuit Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
4
Turn-on Switching Energy (Diode)
5
Turn-off Switching Energy
6
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
4
4
Turn-on Switching Energy (Diode)
5
5
Turn-off Switching Energy
6
6
MIN
TYP
MAX
3200
125
100
9.0
325
25
175
150
6
20
25
230
100
1185
1275
1565
20
25
260
140
1205
1850
2125
UNIT
pF
V
nC
A
s
ns
J
ns
J
050-7613 Rev B 7-2005
APT50GN60BDQ2(G)
TYPICAL PERFORMANCE CURVES
250s PULSE
TEST<0.5 % DUTY
CYCLE
15V
9V
8V
7V
10V
V
GE
= 15V.
250s PULSE TEST
<0.5 % DUTY CYCLE
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(T
J
= 25C)
FIGURE 2, Output Characteristics (T
J
= 125C)
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
GATE CHARGE (nC)
FIGURE 3, Transfer Characteristics
FIGURE 4, Gate Charge
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
T
J
, Junction Temperature (C)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
FIGURE 6, On State Voltage vs Junction Temperature
T
J
, JUNCTION TEMPERATURE (C)
T
C
, CASE TEMPERATURE (C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
FIGURE 8, DC Collector Current vs Case Temperature
BV
CES
, COLLECTOR-TO-EMITTER BREAKDOWN
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
VOLTAGE (NORMALIZED)
I
C,
DC COLLECTOR CURRENT(A)
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
160
140
120
100
80
60
40
20
0
160
140
120
100
80
60
40
20
0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
1.10
1.05
1.00
0.95
0.90
200
180
160
140
120
100
80
60
40
20
0
16
14
12
10
8
6
4
2
0
3.0
2.5
2.0
1.5
1.0
0.5
0
140
120
100
80
60
40
20
0
13V
11V
12V
V
CE
= 120V
V
CE
=480V
0
1
2
3
4
5
0
5
10
15
20
25
30
0
2
4
6
8
10
12
14
0
50 100 150 200 250 300 350 400
8
10
12
14
16
0
25
50
75
100 125 150 175
-50 -25 0 25 50 75 100 125 150 175
-50 -25 0 25 50 75 100 125 150 175
V
CE
= 300V
I
C
= 50A
T
J
= 25C
T
J
= 25C.
250s PULSE TEST
<0.5 % DUTY CYCLE
I
C
= 50A
I
C
= 100A
I
C
= 25A
I
C
= 100A
I
C
= 50A
I
C
= 25A
T
J
= 125C
T
J
= 25C
T
J
= -55C
T
J
= 175C
T
J
= 125C
T
J
= 25C
T
J
= -55C
T
J
= 175C
Lead Temperature
Limited
Lead Temperature
Limited
V
GE
= 15V
050-7613 Rev B 7-2005
APT50GN60BDQ2(G)
V
GE
=15V,T
J
=125C
V
GE
=15V,T
J
=25C
V
CE
=
400V
R
G
=
4.3
L = 100 H
SWITCHING ENERGY LOSSES (J)
E
ON2
, TURN ON ENERGY LOSS (J)
t
r,
RISE TIME (ns)
t
d(ON)
, TURN-ON DELAY TIME (ns)
SWITCHING ENERGY LOSSES (J)
E
OFF
, TURN OFF ENERGY LOSS (J)
t
f,
FALL TIME (ns)
t
d
(OFF)
, TURN-OFF DELAY TIME (ns)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
R
G
, GATE RESISTANCE (OHMS)
T
J
, JUNCTION TEMPERATURE (C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
10
30
50
70
90
110
10
30
50
70
90
110
10
30
50
70
90
110
10
30
50
70
90
110
10
30
50
70
90
110
10
30
50
70
90
110
0
10
20
30
40
50
0
25
50
75
100
125
25
20
15
10
5
0
120
100
80
60
40
20
0
6000
5000
4000
3000
2000
1000
0
16000
14000
12000
10000
8000
6000
4000
2000
0
350
300
250
200
150
100
50
0
160
140
120
100
80
60
40
20
0
4000
3500
3000
2500
2000
1500
1000
500
0
6000
5000
4000
3000
2000
1000
0
V
CE
= 400V
V
GE
= +15V
R
G
= 4.3
T
J
=
125C
T
J
=
25C
V
CE
= 400V
V
GE
= +15V
R
G
= 4.3
T
J
=
125C
T
J
=
25C
V
CE
= 400V
T
J
= 25C
,
125C
R
G
= 4.3
L = 100 H
V
GE
= 15V
R
G
=
4.3, L
=
100
H, V
CE
=
400V
T
J
=
25 or 125C,V
GE
=
15V
R
G
=
4.3, L
=
100
H, V
CE
=
400V
T
J
=
125C, V
GE
=
15V
T
J
=
25C, V
GE
=
15V
E
on2,
100A
E
off,
100A
E
on2,
50A
E
off,
50A
E
on2,
25A
E
off,
25A
V
CE
= 400V
V
GE
= +15V
T
J
= 125C
V
CE
= 400V
V
GE
= +15V
R
G
= 4.3
E
on2,
100A
E
off,
100A
E
on2,
50A
E
off,
50A
E
on2,
25A
E
off,
25A
050-7613 Rev B 7-2005
APT50GN60BDQ2(G)
TYPICAL PERFORMANCE CURVES
5,000
1,000
500
100
50
10
160
140
120
100
80
60
40
20
0
C, CAPACITANCE (
P
F)
I
C
, COLLECTOR CURRENT (A)
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
V
CE
, COLLECTOR TO EMITTER VOLTAGE
Figure 17, Capacitance vs Collector-To-Emitter Voltage
Figure 18,Minimim Switching Safe Operating Area
0
10
20
30
40
50
0
100 200 300 400 500 600 700
C
ies
C
res
C
0es
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
Z
JC
, THERMAL IMPEDANCE (C/W)
0.3
0.7
SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
10 20
30
40
50
60
70
80
F
MAX
, OPERATING FREQUENCY (kHz)
I
C
, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
T
J
= 125
C
T
C
= 75
C
D = 50 %
V
CE
= 400V
R
G
= 4.3
110
50
10
6
0.5
0.1
0.05
F
max
=
min (f
max
, f
max2
)
0.05
f
max1
=
t
d(on)
+ t
r
+ t
d(off)
+ t
f
P
diss
- P
cond
E
on2
+ E
off
f
max2
=
P
diss
=
T
J
- T
C
R
JC
Peak TJ = PDM x ZJC + TC
Duty Factor D =
t1
/
t2
t2
t1
P
DM
Note:
D = 0.9
0.212
0.198
0.00332
0.115
Power
(watts)
RC MODEL
Junction
temp. (C)
Case temperature. (C)
050-7613 Rev B 7-2005
APT50GN60BDQ2(G)
Figure 22, Turn-on Switching Waveforms and Definitions
Figure 23, Turn-off Switching Waveforms and Definitions
T
J
= 125C
Collector Current
Collector Voltage
Gate Voltage
Switching Energy
5%
10%
t
d(on)
90%
10%
t
r
5%
T
J
= 125C
Collector Voltage
Collector Current
Gate Voltage
Switching Energy
0
90%
t
d(off)
10%
t
f
90%
APT40DQ60
I
C
A
D.U.T.
V
CE
Figure 21, Inductive Switching Test Circuit
V
CC
050-7613 Rev B 7-2005
APT50GN60BDQ2(G)
TYPICAL PERFORMANCE CURVES
Characteristic / Test Conditions
Maximum Average Forward Current (T
C
= 111C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (T
J
= 45C, 8.3ms)
Symbol
I
F
(
AV
)
I
F
(
RMS
)
I
FSM
Symbol
V
F
Characteristic / Test Conditions
I
F
= 50A
Forward Voltage
I
F
= 100A
I
F
= 50A, T
J
= 125C
STATIC ELECTRICAL CHARACTERISTICS
UNIT
Amps
UNIT
Volts
MIN
TYP
MAX
2.2
2.7
1.8
APT50GN60BDQ2(G)
40
63
320
DYNAMIC CHARACTERISTICS
MAXIMUM RATINGS
All Ratings: T
C
= 25C unless otherwise specified.
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MIN
TYP
MAX
-
22
-
25
-
35
-
3
-
-
160
-
480
-
6
-
-
85
-
920
-
20
UNIT
ns
nC
Amps
ns
nC
Amps
ns
nC
Amps
Characteristic
Reverse Recovery Time
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Symbol
t
rr
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Test Conditions
I
F
= 40A, di
F
/dt = -200A/s
V
R
= 400V, T
C
= 25C
I
F
= 40A, di
F
/dt = -200A/s
V
R
= 400V, T
C
= 125C
I
F
= 40A, di
F
/dt = -1000A/s
V
R
= 400V, T
C
= 125C
I
F
= 1A, di
F
/dt = -100A/s, V
R
= 30V, T
J
= 25C
Z
JC
, THERMAL IMPEDANCE (C/W)
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 24a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
0.70
0.60
0.50
0.40
0.30
0.20
0.10
0
0.5
SINGLE PULSE
0.1
0.3
0.7
0.05
FIGURE 24b, TRANSIENT THERMAL IMPEDANCE MODEL
Peak TJ = PDM x ZJC + TC
Duty Factor D =
t1
/
t2
t2
t1
P
DM
Note:
0.289
0.381
0.00448
0.120
Power
(watts)
RC MODEL
Junction
temp
(C)
Case temperature
(C)
D = 0.9
050-7613 Rev B 7-2005
APT50GN60BDQ2(G)
T
J
= 125C
V
R
= 400V
20A
40A
80A
180
160
140
120
100
80
60
40
20
0
25
20
15
10
5
0
Duty cycle = 0.5
T
J
= 175C
0
25
50
75
100
125
150
25
50
75
100
125
150
175
1
10
100 200
80
70
60
50
40
30
20
10
0
C
J
, JUNCTION CAPACITANCE
K
f
, DYNAMIC PARAMETE
RS
(pF)
(Normalized to 1000A/
s)
I
F(AV)
(A)
T
J
, JUNCTION TEMPERATURE (C)
Case Temperature (C)
Figure 29. Dynamic Parameters vs. Junction Temperature
Figure 30. Maximum Average Forward Current vs. CaseTemperature
V
R
, REVERSE VOLTAGE (V)
Figure 31. Junction Capacitance vs. Reverse Voltage
Q
rr
, REVERSE RECOVERY CHARGE
I
F
,
FORWARD CURRENT
(nC)
(A)
I
RRM
, REVERSE RECOVERY CURRENT
t
rr
, REVERSE RECOVERY TIME
(A)
(ns)
T
J
= 175C
T
J
= -55C
T
J
= 25C
T
J
= 125C
T
J
= 125C
V
R
= 400V
80A
20A
40A
0
0.5
1
1.5
2
2.5
3
0
200
400
600
800 1000 1200
0
200
400
600
800 1000 1200
0
200
400
600
800 1000 1200
120
100
80
60
40
20
0
1400
1200
1000
800
600
400
200
0
T
J
= 125C
V
R
= 400V
80A
40A
20A
t
rr
Q
rr
Q
rr
t
rr
I
RRM
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
200
180
160
140
120
100
80
60
40
20
0
V
F
, ANODE-TO-CATHODE VOLTAGE (V)
-di
F
/dt, CURRENT RATE OF CHANGE(A/s)
Figure 25. Forward Current vs. Forward Voltage
Figure 26. Reverse Recovery Time vs. Current Rate of Change
-di
F
/dt, CURRENT RATE OF CHANGE (A/s)
-di
F
/dt, CURRENT RATE OF CHANGE (A/s)
Figure 27. Reverse Recovery Charge vs. Current Rate of Change
Figure 28. Reverse Recovery Current vs. Current Rate of Change
050-7613 Rev B 7-2005
APT50GN60BDQ2(G)
TYPICAL PERFORMANCE CURVES
4
3
1
2
5
5
Zero
1
2
3
4
di
F
/dt - Rate of Diode Current Change Through Zero Crossing.
I
F
- Forward Conduction Current
I
RRM
- Maximum Reverse Recovery Current.
trr - Reverse
R
ecovery Time, measured from zero crossing where
diode
Qrr - Area Under the Curve Defined by I
RRM
and trr.
current goes from positive to negative, to the point at which the straight
line through I
RRM
and 0.25 I
RRM
passes through zero.
Figure 32. Diode Test Circuit
Figure 33, Diode Reverse Recovery Waveform and Definitions
0.25 IRRM
PEARSON 2878
CURRENT
TRANSFORMER
di
F
/dt Adjust
30H
D.U.T.
+18V
0V
trr/Qrr
Waveform
Vr
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
TO-247 Package Outline
e1 SAC: Tin, Silver, Copper
APT40GT60BR
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
3.55 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Dimensions in Millimeters and (Inches)
2-Plcs.
Collector
(Cathode)
Emitter
(Anode)
Gate
Collector (Cathode)
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