Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

= 0V, I

= 250µA)

On State Drain Current

> I

D(on)

x R

DS(on)

Max, V

= 10V)

Drain-Source On-State Resistance

= 10V, 0.5 I

D[Cont.]

)

Zero Gate Voltage Drain Current (V

= V

DSS

, V

= 0V)

Zero Gate Voltage Drain Current (V

= 0.8 V

DSS

, V

= 0V, T

= 125°C)

Gate-Source Leakage Current (V

= ±30V, V

= 0V)

Gate Threshold Voltage (V

= V

, I

= 1.0mA)

050-5627 Rev A 1-2005

MAXIMUM RATINGS

All Ratings: T

= 25°C unless otherwise specified.

Symbol

DSS

GSM

STG

Parameter

Drain-Source Voltage

Continuous Drain Current @ T

= 25°C

Pulsed Drain Current

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

Total Power Dissipation @ T

= 25°C

Linear Derating Factor

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

Avalanche Current

(Repetitive and Non-Repetitive)

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

STATIC ELECTRICAL CHARACTERISTICS

Symbol

DSS

D(on)

DS(on)

DSS

GSS

GS(th)

UNIT

Volts

Amps

Ohms

µA

Volts

MIN

TYP

MAX

500

0.15

250

1000
±100

APT5015BVFR_SVFR

500

128
±30
±40
370

2.96

-55 to 150

300

30
30

1300

FREDFET

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

Power MOS V

is a new generation of high voltage N-Channel enhancement

mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V

also achieves faster switching speeds through optimized gate layout.

· Faster Switching

· Avalanche Energy Rated

· Lower Leakage

· TO-247 or Surface Mount D

PAK Package

· Fast Recovery Body Diode

POWER MOS V

TO-247

PAK

BVFR

SVFR

APT5015BVFR

APT5015SVFR

500V 32A 0.150

DYNAMIC CHARACTERISTICS

APT5015BVFR_SVFR

050-5627 Rev A 1-2005

, THERMAL IMPEDANCE (°C/W)

-5

-4

-3

-2

-1

1.0

RECTANGULAR PULSE DURATION (SECONDS)

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

0.4

0.1

0.05

0.01

0.005

0.001

Note:

Duty Factor D = t1/t2

Peak TJ = PDM x ZJC + TC

0.1

SINGLE PULSE

0.02

0.05

0.2

D=0.5

0.01

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Characteristic / Test Conditions

Continuous Source Current (Body Diode)
Pulsed Source Current

(Body Diode)

Diode Forward Voltage

= 0V, I

= -I

[Cont.])

Peak Diode Recovery

Reverse Recovery Time
(I

= -I

[Cont.],

= 100A/µs)

Reverse Recovery Charge
(I

= -I

[Cont.],

= 100A/µs)

Peak Recovery Current
(I

= -I

[Cont.],

= 100A/µs)

Symbol

RRM

UNIT

Amps

Volts

V/ns

µC

Amps

Symbol

iss

oss

rss

(on)

(off)

Characteristic
Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge
Gate-Drain ("Miller") Charge

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Test Conditions

= 0V

= 25V

f = 1 MHz

= 10V

= 0.5 V

DSS

= I

[Cont.] @ 25°C

= 15V

= 0.5 V

DSS

= I

[Cont.] @ 25°C

= 1.6

MIN

TYP

MAX

4400

5280

600

840

230

350

200

300

120

UNIT

MIN

TYP

MAX

128

1.3

= 25°C

250

= 125°C

525

= 25°C

1.6

= 125°C

6.0

= 25°C

= 125°C

Repetitive Rating: Pulse width limited by maximum junction

See MIL-STD-750 Method 3471

temperature.

Starting T

+25°C, L = 2.54mH, R

, Peak I

= 32A

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

- -I

[Cont.],

= 100A/µs, V

DSS

150°C, R

= 2.0

= 200V.

APT Reserves the right to change, without notice, the specifications and information contained herein.

THERMAL CHARACTERISTICS

Symbol

MIN

TYP

MAX

0.34

UNIT

°C/W

Characteristic

Junction to Case
Junction to Ambient

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS

FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS

, GATE-TO-SOURCE VOLTAGE (VOLTS)

, DRAIN CURRENT (AMPERES)

FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS

FIGURE 5, R

(ON) vs DRAIN CURRENT

, CASE TEMPERATURE (°C)

, JUNCTION TEMPERATURE (°C)

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE

FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE

, JUNCTION TEMPERATURE (°C)

, CASE TEMPERATURE (°C)

FIGURE 8, ON-RESISTANCE vs. TEMPERATURE

FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

(ON), DRAIN-TO-SOURCE ON RESISTANCE

, DRAIN CURRENT (AMPERES)

(NORMALIZED)

(TH), THRESHOLD VOLTAGE

DSS

, DRAIN-TO-SOURCE BREAKDOWN

(ON), DRAIN-TO-SOURCE ON RESISTANCE

, DRAIN CURRENT (AMPERES)

(NORMALIZED)

VOLTAGE (NORMALIZED)

100

150

200

250

100

125

150

-50 -25

100 125 150

-50 -25

75 100 125 150

-50 -25

75 100 125 150

APT5015BVFR_SVFR

D = 0.5 ID [Cont.]

GS = 10V

1.5

1.4

1.3

1.2

1.1

1.0

0.9

1.15

1.10

1.05

1.00

0.95

0.90

0.85

1.2

1.1

1.0

0.9

0.8

0.7

0.6

2.5

2.0

1.5

1.0

0.5

0.0

050-5627 Rev A 1-2005

VDS> ID (ON) x RDS (ON)MAX.

250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE

VGS=10V

VGS=20V

TJ = -55°C

TJ = +125°C

TJ = +25°C

TJ = -55°C

5.5V

4.5V

VGS=6V, 7V, 8V, 10V & 15V

5.5V

4.5V

VGS=15V

VGS=7V, 8V & 10V

TJ = +125°C

NORMALIZED TO

= 10V @ 0.5 I

D [Cont.]

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 10, MAXIMUM SAFE OPERATING AREA

FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

, TOTAL GATE CHARGE (nC)

, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE

FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE

, GATE-TO-SOURCE VOLTAGE (VOLTS)

, DRAIN CURRENT (AMPERES)

, REVERSE DRAIN CURRENT (AMPERES)

C, CAPACITANCE (pF)

APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.

TO-247 Package Outline (BVFR)

PAK Package Outline (SVFR)

15.95 (.628)

16.05 (.632)

1.22 (.048)

1.32 (.052)

5.45 (.215) BSC

{2 Plcs.}

4.98 (.196)

5.08 (.200)
1.47 (.058)

1.57 (.062)

2.67 (.105)

2.84 (.112)

0.46 (.018)

0.56 (.022)

Dimensions in Millimeters (Inches)

Heat Sink (Drain)

and Leads

are Plated

2.40 (.094)

2.70 (.106)

(Base of Lead)

Drain (Heat Sink)

1.98 (.078)

2.08 (.082)

Gate

Drain

Source

0.020 (.001)

0.178 (.007)

1.27 (.050)

1.40 (.055)

11.51 (.453)

11.61 (.457)

13.41 (.528)

13.51 (.532)

1.04 (.041)

1.15 (.045)

13.79 (.543)

13.99 (.551)

15.49 (.610)

16.26 (.640)

5.38 (.212)

6.20 (.244)

6.15 (.242) BSC

4.50 (.177) Max.

19.81 (.780)

20.32 (.800)

20.80 (.819)

21.46 (.845)

1.65 (.065)

2.13 (.084)

1.01 (.040)

1.40 (.055)

3.50 (.138)

3.81 (.150)

2.87 (.113)

3.12 (.123)

4.69 (.185)

5.31 (.209)
1.49 (.059)

2.49 (.098)

2.21 (.087)

2.59 (.102)

0.40 (.016)

0.79 (.031)

Drain

Drain
Source

Gate

5.45 (.215) BSC

Dimensions in Millimeters and (Inches)

2-Plcs.

50 100

500

.01

100

150

200

250

300

350

0.4

0.8

1.2

1.6

2.0

APT5015BVFR_SVFR

200

100

20,000

10,000

5,000

1,000

500

100

300

100

050-5627 Rev A 1-2005

TJ =+150°C

TJ =+25°C

Crss

Coss

Ciss

VDS=250V

VDS=100V

VDS=400V

D = ID [Cont.]

TC =+25°C

TJ =+150°C

SINGLE PULSE

OPERATION HERE

LIMITED BY RDS (ON)

10µS

1mS

10mS

100mS
DC

100µS

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