MAXIMUM RATINGS
All Ratings: T
C
= 25C unless otherwise specified.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
RF POWER MOSFETs
N- CHANNEL ENHANCEMENT MODE
200V
300W
45MHz
The ARF466FL is a rugged high voltage RF power transistor designed for scientific, commercial, medical and industrial
RF power amplifier applications up to 45 MHz. It has been optimized for both linear and high efficiency classes of
operation.
Specified 150 Volt, 40.68 MHz Characteristics:
Output Power = 300 Watts.
Gain = 16dB (Class AB)
Efficiency = 75% (Class C)
Low Cost Flangeless RF Package.
Low Vth thermal coefficient.
Low Thermal Resistance.
Optimized SOA for Superior Ruggedness.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
R
DS(ON)
I
DSS
I
GSS
g
fs
V
GS
(TH)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250 A)
Drain-Source On-State Resistance
1
(V
GS
= 10V
,
I
D
= 6.5A
)
Zero Gate Voltage Drain Current (V
DS
= 1000V, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 800V, V
GS
= 0V, T
C
= 125C)
Gate-Source Leakage Current (V
GS
= 30V, V
DS
= 0V)
Forward Transconductance (V
DS
= 25V, I
D
= 6.5A)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 1mA)
MIN
TYP
MAX
1000
0.90
25
250
100
3.3
7
9
2
4
UNIT
Volts
ohms
A
nA
mhos
Volts
Symbol
V
DSS
V
DGO
I
D
V
GS
P
D
R
JC
T
J
,T
STG
T
L
Parameter
Drain-Source Voltage
Drain-Gate Voltage
Continuous Drain Current @ T
C
= 25C
Gate-Source Voltage
Total Power Dissipation @ T
C
= 25C
Junction to Case
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
ARF466FL
1000
1000
13
30
450
0.30
-55 to 175
300
UNIT
Volts
Amps
Volts
Watts
C/W
C
G
D
S
ARF466FL
050-4928 Rev A 2-2006
ARF466FL
DYNAMIC CHARACTERISTICS
ARF466FL
30
45
60
75
90
105
120
FREQUENCY (MHz)
Figure 1, Typical Gain vs Frequency
Class C
V
DD
= 150V
P
out
= 150W
30
25
20
15
10
5
0
GAIN (dB)
Symbol
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V
GS
= 0V
V
DS
= 150V
f = 1 MHz
V
GS
= 15V
V
DD
= 500 V
I
D
= 13A @ 25C
R
G
= 1.6
MIN
TYP
MAX
2000
165
75
12
10
43
10
UNIT
pF
ns
FUNCTIONAL CHARACTERISTICS
Symbol
G
PS
Test Conditions
f = 40.68 MHz
V
GS
= 2.5V V
DD
= 150V
P
out
= 300W
No Degradation in Output Power
Characteristic
Common Source Amplifier Power Gain
Drain Efficiency
Electrical Ruggedness VSWR 10:1
MIN
TYP
MAX
14
16
70
75
UNIT
dB
%
1 Pulse Test: Pulse width < 380S, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
1
10
100
1000
20
18
16
14
12
10
8
6
4
2
0
0
1
2
3
4
5
6
7
8
CAPACITANCE (pf)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 2, Typical Capacitance vs. Drain-to-Source Voltage
10,000
1000
500
100
50
10
.1
1
10
100 200
I
D
, DRAIN CURRENT (AMPERES)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 4, Typical Maximum Safe Operating Area
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 3, Typical Transfer Characteristics
I
D
, DRAIN CURRENT (AMPERES)
VDS> ID (ON) x RDS (ON)MAX.
250SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
TJ = -55C
TJ = -55C
TJ = +125C
TJ = +25C
TC =+25C
TJ =+175C
SINGLE PULSE
OPERATION HERE
LIMITED BY RDS (ON)
Ciss
Coss
Crss
52
10
5
1
.5
.1
1mS
10mS
100mS
100uS
050-4928 Rev A 2-2006
ARF466FL
TYPICAL PERFORMANCE CURVES
050-4928 Rev A 2-2006
T
C
, CASE TEMPERATURE (C)
Figure 5, Typical Threshold Voltage vs Temperature
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6, Typical Output Characteristics
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
-50 -25
0
25
50
75
100 125 150
25
20
15
10
5
0
0
5
10
15
20
25
30
I
D
, DRAIN CURRENT (AMPERES)
V
GS(th)
, THRESHOLD VOLTAGE
(NORMALIZED)
5.5V
4.5V
5V
6V
VGS=15 & 10V
8V
4V
Figure 7b, TRANSIENT THERMAL IMPEDANCE MODEL
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZJC + TC
t1
t2
P
DM
SINGLE PULSE
Z
JC
, THERMAL IMPEDANCE (C/W)
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 7a, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
0.5
0.1
0.3
0.7
D = 0.9
0.05
Table 1 - Typical Class AB Large Signal Input - Output Impedance
Freq. (MHz)
Z
OL
(
)
2.0
13.5
27.1
40.7
65
18 - j 11
1.3 - j 5
.40 - j 2.6
.20 - j 1.6
.11 + j 0.6
30 - j 1.7
25.7 - j 9.8
18 - j 13.3
12 - j 12.6
6.2 - j 8.9
Zin - Gate shunted with 25 I
DQ
= 100mA
Z
OL
- Conjugate of optimum load for 300 W output at Vdd = 150V
Z
IN
(
)
0.108
0.146
0.0460
0.00872
0.0650
0.767
Power
(watts)
Junction
temp. (
C)
RC MODEL
Case temperature. (
C)
ARF466FL
050-4928 Rev A 2-2006
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 and foreign patents. US and Foreign patents pending. All Rights Reserved.
Thermal Considerations and Package Mounting:
The rated power dissipation is only available when the
package mounting surface is at 25
C and the junction tem-
perature is 175
C. The thermal resistance between junc-
tions and case mounting surface is 0.3
C/W. When instal-
led, an additional thermal impedance of 0.1
C/W between
the package base and the mounting surface is typical. In-
sure that the mounting surface is smooth and flat. Thermal
joint compound must be used to reduce the effects of small
surface irregularities. Use the minimum amount necessary
to coat the surface. The heatsink should incorporate a cop-
per heat spreader to obtain best results.
The package design clamps the ceramic base to the
heatsink. A clamped joint maintains the required mounting
pressure while allowing for thermal expansion of both the
base and the heat sink. Four 4-40 (M3) screws provide
the required mounting force. Torque the mounting screws
to 6 in-lb (0.68 N-m).
.330
.210
.210
.375
.570
ARF466FL
1.500
.100
.100
.300
.200
.005
.040
.320
1.250
.125R
4 pls
.125dia
4 pls
T3 Package Outline
D
S
S
S
S
G
L1
C1
R1
R3
R4
R5
ARF466FL
L2
L3
C3
C4
C7
C6
R2
C2
C8
C9
L4
150V
+
-
RF
Output
RF
Input
40.68 MHz Test Circuit
+
-
Bias
0-12V
C5
TL1
C1 -- 2200pF ATC 700B
C2-C5 -- Arco 465 Mica trimmer
C6-C8 -- .1mF 500V ceramic chip
C9 -- 3x 2200pF 500V chips COG
L1 -- 3t #22 AWG .25"ID .25 "L ~55nH
L2 -- 5t #16 AWG .312" ID .35"L ~176nH
L3 -- 10t #24 AWG .25"ID ~.5uH
L4 -- VK200-4B ferrite choke 3uH
R1- R3 -- 1k
0.5W
R4- R5 -- 1
1W SMT
TL1 -- 40
t-line 0.15 x 2"
C1 is ~1.75" from R4-5.
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