050-7429 Rev C 6-2003
APT45GP120B
1200V
The POWER MOS 7
IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
Low Conduction Loss
100 kHz operation @ 800V, 16A
Low Gate Charge
50 kHz operation @ 800V, 28A
Ultrafast Tail Current shutoff
RBSOA rated
POWER MOS 7
IGBT
MAXIMUM RATINGS
All Ratings: T
C
= 25C unless otherwise specified.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
STATIC ELECTRICAL CHARACTERISTICS
MIN
TYP
MAX
1200
3
4.5
6
3.3
3.9
3.0
500
2500
100
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 500A)
Gate Threshold Voltage (V
CE
= V
GE
, I
C
= 1mA, T
j
= 25C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 45A, T
j
= 25C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 45A, T
j
= 125C)
Collector Cut-off Current (V
CE
= 1200V, V
GE
= 0V, T
j
= 25C)
2
Collector Cut-off Current (V
CE
= 1200V, V
GE
= 0V, T
j
= 125C)
2
Gate-Emitter Leakage Current (V
GE
= 20V)
Symbol
BV
CES
V
GE(TH)
V
CE(ON)
I
CES
I
GES
UNIT
Volts
A
nA
Symbol
V
CES
V
GE
V
GEM
I
C1
I
C2
I
CM
RBSOA
P
D
T
J
,T
STG
T
L
APT45GP120B
1200
20
30
100
54
170
170A @ 960V
625
-55 to 150
300
UNIT
Volts
Amps
Watts
C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current
7
@ T
C
= 25C
Continuous Collector Current @ T
C
= 110C
Pulsed Collector Current
1
@ T
C
= 25C
Reverse Bias Safe Operating Area @ T
J
= 150C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
TO-247
G
C
E
G
C
E
050-7429 Rev C 6-2003
APT45GP120B
DYNAMIC CHARACTERISTICS
Symbol
C
ies
C
oes
C
res
V
GEP
Q
g
Q
ge
Q
gc
RBSOA
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
Test Conditions
Capacitance
V
GE
= 0V, V
CE
= 25V
f = 1 MHz
Gate Charge
V
GE
= 15V
V
CE
= 600V
I
C
= 45A
T
J
= 150C, R
G
= 5
,
V
GE
=
15V, L = 100H,V
CE
= 960V
Inductive Switching (25C)
V
CC
= 600V
V
GE
= 15V
I
C
= 45A
R
G
= 5
T
J
= +25C
Inductive Switching (125C)
V
CC
= 600V
V
GE
= 15V
I
C
= 45A
R
G
= 5
T
J
= +125C
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge
3
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
4
Turn-on Switching Energy (Diode)
5
Turn-off Switching Energy
6
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
4
4
Turn-on Switching Energy (Diode)
5
5
Turn-off Switching Energy
6
6
MIN
TYP
MAX
3935
300
55
7.5
185
25
80
170
18
29
102
38
900
1869
904
18
29
151
79
900
3078
2254
UNIT
pF
V
nC
A
ns
J
ns
J
UNIT
C/W
gm
MIN
TYP
MAX
.20
N/A
5.9
Characteristic
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
Symbol
R
JC
R
JC
W
T
THERMAL AND MECHANICAL CHARACTERISTICS
1
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
ces
includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 E
on1
is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure 24.)
5 E
on2
is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 E
off
is the clamped inductive turn-off energy measured in accordance wtih JEDEC standard JESD24-1. (See Figures 21, 23.)
7 Continuous current limited by package lead temperature.
APT Reserves the right to change, without notice, the specifications and information contained herein.
050-7429 Rev C 6-2003
APT45GP120B
TYPICAL PERFORMANCE CURVES
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(V
GE
= 15V)
FIGURE 2, Output Characteristics (V
GE
= 10V)
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
GATE CHARGE (nC)
FIGURE 3, Transfer Characteristics
FIGURE 4, Gate Charge
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
T
J
, Junction Temperature (C)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
FIGURE 6, On State Voltage vs Junction Temperature
T
J
, JUNCTION TEMPERATURE (C)
T
C
, CASE TEMPERATURE (C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
FIGURE 8, DC Collector Current vs Case Temperature
BV
CES
, COLLECTOR-TO-EMITTER BREAKDOWN
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
VOLTAGE (NORMALIZED)
I
C,
DC COLLECTOR CURRENT(A)
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
0
0.5
1
1.5
2
2.5
3
3.5
4
0 0.5
1 1.5 2
2.5 3 3.5 4 4.5 5
0
1
2
3
4
5
6
7
8
9 10
0 20 40 60 80 100 120 140 160 180 200
6
8
10
12
14
16
0
25
50
75
100
125
-50
-25
0
25
50
75
100 125
-50
-25
0
25
50
75 100 125 150
TJ = 25C.
250s PULSE TEST
<0.5 % DUTY CYCLE
T
C
=125C
T
C
=25C
VGE = 10V.
250s PULSE TEST
<0.5 % DUTY CYCLE
VGE = 15V.
250s PULSE TEST
<0.5 % DUTY CYCLE
VGE = 15V.
250s PULSE TEST
<0.5 % DUTY CYCLE
IC = 45A
TJ = 25C
TJ = 25C
TJ = -55C
TJ = 125C
T
C
=25C
T
C
=125C
250s PULSE TEST
<0.5 % DUTY CYCLE
I
C
= 22.5A
I
C
= 45A
I
C
= 90A
I
C
= 90A
I
C
= 22.5A
90
80
70
60
50
40
30
20
10
0
160
140
120
100
80
60
40
20
0
5
4
3
2
1
0
1.2
1.15
1.10
1.05
1.0
0.95
0.9
0.85
0.8
90
80
70
60
50
40
30
20
10
0
16
14
12
10
8
6
4
2
0
5
4.5
4
3.5
3
2.5
2.0
1.5
1.0
0.05
0
160
140
120
100
80
60
40
20
0
I
C
= 45A
V
CE
=960V
V
CE
=600V
V
CE
=240V
050-7429 Rev C 6-2003
APT45GP120B
T
J
=
125C, V
GE
=
10V
or 15V
T
J
=
25C, V
GE
=
10V
or 15V
V
CE
= 600V
R
G
= 5
L = 100 H
V
GE
=
15V,T
J
=125C
V
GE
= 15V
V
GE
= 10V
V
GE
=10V,T
J
=125C
V
GE
=
10V,T
J
=25C
V
GE
=
15V,T
J
=25C
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
R
G
, GATE RESISTANCE (OHMS)
T
J
, JUNCTION TEMPERATURE (C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
T
J
=
25 or 125C,V
GE
=
15V
T
J
=
25 or 125C,V
GE
=
10V
SWITCHING ENERGY LOSSES (J)
E
ON2
, TURN ON ENERGY LOSS (J)
t
r,
RISE TIME (ns)
t
d(ON)
, TURN-ON DELAY TIME (ns)
SWITCHING ENERGY LOSSES (J)
E
OFF
, TURN OFF ENERGY LOSS (J)
t
f,
FALL TIME (ns)
t
d
(OFF)
, TURN-OFF DELAY TIME (ns)
T
J
=125C, V
GE
=15V
T
J
=125C,V
GE
=10V
T
J
= 25C, V
GE
=10V
T
J
= 25C, V
GE
=15V
0
10
20
30
40
50
60
70
80
90
0
10
20
30
40
50
60
70
80
90
10
20
30
40
50
60
70
80
90
10
20
30
40
50
60
70
80
90
10
20
30
40
50
60
70
80
90
0
20
30
40
50
60
70
80
90
0
10
20
30
40
50
0
25
50
75
100
125
35
30
25
20
15
10
5
0
80
70
60
50
40
30
20
10
0
8000
7000
6000
5000
4000
3000
2000
1000
0
12000
10000
8000
6000
4000
2000
0
180
160
140
120
100
80
60
40
20
0
100
90
80
70
60
50
40
30
20
10
0
6000
5000
4000
3000
2000
1000
0
8000
7000
6000
5000
4000
3000
2000
1000
0
E
off
90A
E
on2
90A
E
on2
22.5A
E
off
45A
E
on2
45A
E
off
22.5A
E
on2
22.5A
E
off
45A
E
on2
45A
E
on2
90A
E
off
90A
E
off
22.5A
V
CE
= 600V
T
J
= 25C or 125C
R
G
= 5
L = 100 H
VCE = 600V
L = 100 H
RG = 5
VCE = 600V
VGE = +15V
T
J
= 125C
VCE = 600V
VGE = +15V
RG = 5
R
G
=
5
, L
=
100
H, V
CE
=
600V
R
G
=
5
, L
=
100
H, V
CE
=
600V
T
J
=
25C, V
GE
=
10V
or 15V
T
J
=
125C, V
GE
=
10V
or 15V
VCE = 600V
L = 100 H
RG = 5
TYPICAL PERFORMANCE CURVES
050-7429 Rev C 6-2003
APT45GP120B
TYPICAL PERFORMANCE CURVES
10
20
30
40
50
60
70
80
90
170
100
50
10
5
1
0.25
0.20
0.15
0.10
0.05
0
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x Z
JC + TC
t1
t2
P
DM
Z
JC
, THERMAL IMPEDANCE (C/W)
0.3
0.9
0.7
0.1
0.05
0.5
SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19A, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
10,000
5,000
1,000
500
100
50
10
180
160
140
120
100
80
60
40
20
0
C, CAPACITANCE (
P
F)
I
C
, COLLECTOR CURRENT (A)
F
MAX
, OPERATING FREQUENCY (kHz)
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
V
CE
, COLLECTOR TO EMITTER VOLTAGE
Figure 17, Capacitance vs Collector-To-Emitter Voltage
Figure 18, Minimim Switching Safe Operating Area
0
10
20
30
40
50
0 100 200 300 400 500 600 700 800 900 1000
I
C
, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
TJ = 125
C
TC = 75
C
D = 50 %
VCE = 800V
RG = 5
Cies
Coes
max
max1
max 2
max1
d (on )
r
d(off )
f
diss
cond
max 2
on 2
off
J
C
diss
JC
F
min(f
, f
)
0.05
f
t
t
t
t
P
P
f
E
E
T
T
P
R
=
=
+ +
+
-
=
+
-
=
Cres
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
0.0296
0.0870
0.0838
0.00782
0.0150
0.185
Power
(Watts)
Junction
temp. ( "C)
Case temperature
RC MODEL
050-7429 Rev C 6-2003
APT45GP120B
T0-247 Package Outline
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Collector
Collector
Emitter
Gate
5.45 (.215) BSC
Dimensions in Millimeters and (Inches)
2-Plcs.
Figure 22, Turn-on Switching Waveforms and Definitions
Figure 23, Turn-off Switching Waveforms and Definitions
*DRIVER SAME TYPE AS D.U.T.
I
C
V
CLAMP
100uH
V
TEST
A
A
B
D.U.T.
DRIVER*
V
CE
Figure 24, E
ON1
Test Circuit
Gate Voltage
Collector Voltage
Collector Current
90%
0
Switching
Energy
T
J
= 125 C
90%
t
d(off)
t
f
10%
10%
t
d(on)
5%
10%
90%
t
r
5 %
Collector Current
Collector Voltage
Gate Voltage
Switching Energy
T
J
= 125 C
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
I
C
A
D.U.T.
APT30DF120
V
CE
Figure 21, Inductive Switching Test Circuit
V
CC
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