050-7236 Rev A 5-2005
FINAL DATA SHEET WITH MOS 7 FORMAT
600V 40A 0.110
APT40N60B2CF
APT40N60LCF
APT40N60B2CFG* APT40N60LCFG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
MAXIMUM RATINGS
All Ratings: T
C
= 25C unless otherwise specified
.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 500A)
Drain-Source On-State Resistance
2
(V
GS
= 10V, I
D
= 20A)
Zero Gate Voltage Drain Current (V
DS
= 600V, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 600V, V
GS
= 0V, T
C
= 150C)
Gate-Source Leakage Current (V
GS
= 20V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 2mA)
Symbol
V
DSS
I
D
I
DM
V
GS
P
D
T
J
,T
STG
T
L
dv/dt
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25C
Continuous Drain Current @ T
C
= 100C
Pulsed Drain Current
1
Gate-Source Voltage Continuous
Total Power Dissipation @ T
C
= 25C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Drain-Source Voltage slope (V
DS
= 480V, I
D
= 40A, T
J
= 125C)
Avalanche Current
7
Repetitive Avalanche Energy
7
Single Pulse Avalanche Energy
4
UNIT
Volts
Amps
Volts
Watts
W/C
C
V/ns
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Ohms
A
nA
Volts
APT40N60B2CF(G)_LCF(G)
600
40
26
80
30
417
3.33
-55 to 150
260
80
20
1
690
Ultra Low R
DS(ON)
Intrinsic Fast-Recovery Body Diode
Low Miller Capacitance
Extreme Low Reverse Recovery Charge
Ultra Low Gate Charge, Q
g
Ideal For ZVS Applications
Avalanche Energy Rated
Popular T-MAXTM or TO-264 Package
Extreme dv/dt Rated
Super Junction FREDFET
MIN
TYP
MAX
600
0.110
4.2
3400
100
3
4
5
APT Website - http://www.advancedpower.com
C
Power Semiconductors
O
O L
MOS
G
D
S
"COOLMOSTM comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trade-
mark of Infineon Technologies AG."
T-Max
TM
TO-264
050-7236 Rev A 5-2005
DYNAMIC CHARACTERISTICS
APT40N60B2CF(G)_LCF(G)
SINGLE PULSE
Z
JC
, THERMAL IMPEDANCE (C/W)
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
0.5
0.1
0.3
0.7
0.9
0.05
FINAL DATA SHEET WITH MOS 7 FORMAT
Peak TJ = PDM x ZJC + TC
Duty Factor D =
t1
/
t2
t2
t1
P
DM
Note:
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
1
(Body Diode)
Diode Forward Voltage
2
(V
GS
= 0V, I
S
= -40A)
Peak Diode Recovery
dv
/
dt
5
Reverse Recovery Time
(I
S
= -40A,
di
/
dt
= 100A/s)
Reverse Recovery Charge
(I
S
= -40A,
di
/
dt
= 100A/s)
Peak Recovery Current
(I
S
= -40A,
di
/
dt
= 100A/s)
Symbol
I
S
I
SM
V
SD
dv
/
dt
t
rr
Q
rr
I
RRM
UNIT
Amps
Volts
V/ns
ns
C
Amps
MIN
TYP
MAX
40
80
2.4
40
195
290
1.8
3.5
17
22
Symbol
R
JC
R
JA
MIN
TYP
MAX
0.30
31
UNIT
C/W
Characteristic
Junction to Case
Junction to Ambient
1
Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2%
3
See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
T
j
= 25C
T
j
= 125C
T
j
= 25C
T
j
= 125C
T
j
= 25C
T
j
= 125C
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
on
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
6
Turn-off Switching Energy
Turn-on Switching Energy
6
Turn-off Switching Energy
Test Conditions
V
GS
= 0V
V
DS
= 25V
f
= 1 MHz
V
GS
= 10V
V
DD
= 300V
I
D
= 40A
@ 25C
RESISTIVE SWITCHING
V
GS
=
15V
V
DD
=
380V
I
D
=
40A
@ 25C
R
G
=
1.8
INDUCTIVE SWITCHING @ 25C
V
DD
=
400V, V
GS
= 15V
I
D
=
40A, R
G
=
5
INDUCTIVE SWITCHING @ 125C
V
DD
=
400V, V
GS
= 15V
I
D
=
40A, R
G
=
5
4
Starting T
j
=
+25C, L = 13.80mH, R
G
=
25, Peak I
L
= 10A
5
dv
/
dt
numbers reflect the limitations of the test circuit rather than the
device itself.
I
S
-
I
D
40A
di
/
dt
700A/s
V
R
480V
T
J
125
C
6 Eon includes diode reverse recovery. See figures 18, 20.
7 Repetitive avalanche causes additional power losses that can be calcu-
lated as
P
AV
= E
AR
*f
MIN
TYP
MAX
5040
1365
80
185
36
115
12
15
60
6.4
725
365
1195
440
UNIT
pF
nC
ns
J
050-7236 Rev A 5-2005
Typical Performance Curves
APT40N60B2CF(G)_LCF(G)
Scope pics are placed with the place command
and then scaled to 50%
Scope pics are placed with the place command
and then scaled to 50%
7V
5.5V
6V
6.5V
V
GS
= 15 &10 V
8V
100
90
80
70
60
50
40
30
20
10
0
1.40
1.30
1.20
1.10
1.00
0.90
0.80
1.15
1.10
1.05
1.00
0.95
0.90
1.2
1.1
1.0
0.9
0.8
0.7
0.6
V
DS
> I
D(ON)
x R
DS(ON)
MAX.
250SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
I
D
, DRAIN CURRENT (AMPERES)
I
D
, DRAIN CURRENT (AMPERES)
(NORMALIZED)
V
GS
(TH), THRESHOLD VOLTAGE
BV
DSS
, DRAIN-TO-SOURCE BREAKDOWN
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
I
D
, DRAIN CURRENT (AMPERES)
(NORMALIZED)
VOLTAGE (NORMALIZED)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 4, TRANSFER CHARACTERISTICS
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
T
C
, CASE TEMPERATURE (C)
T
J
, JUNCTION TEMPERATURE (C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
T
J
, JUNCTION TEMPERATURE (C)
T
C
, CASE TEMPERATURE (C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
0
5
10
15
20
0
2
4
6
8
10
0
10 20 30 40 50
60 70 80
25
50
75
100
125
150
-50
0
50
100
150
-50 -25
0
25 50
75 100 125 150
-50 -25
0
25 50 75 100 125 150
7.5V
T
J
= -55C
T
J
= +25C
T
J
= +125C
NORMALIZED TO
V
GS
= 10V @ 20A
V
GS
=10V
V
GS
=20V
0.0136
0.0289
0.0988
0.00308F
0.00145F
0.00948F
Power
(watts)
Junction
temp. (C)
RC MODEL
Case temperature. (C)
0.158
0.231F
120
100
80
60
40
20
0
40
35
30
25
20
15
10
5
0
3.0
2.5
2.0
1.5
1.0
0.5
0
I
D
= 20A
V
GS
= 10V
050-7236 Rev A 5-2005
APT40N60B2CF(G)_LCF(G)
Scope pics are placed with the place command
and then scaled to 50%
Scope pics are placed with the place command
and then scaled to 50%
T
C
=+25C
T
J
=+150C
SINGLE PULSE
OPERATION HERE
LIMITED BY RDS (ON)
C
rss
C
iss
C
oss
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPERES)
I
DR
, REVERSE DRAIN CURRENT (AMPERES)
C, CAPACITANCE (pF)
80
10
5
1
16
12
8
4
0
30,000
10,000
1,000
100
10
200
100
10
1
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Q
g
, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
100S
1mS
10mS
SWITCHING ENERGY (mJ)
t
d(on)
and t
d(off)
(ns)
SWITCHING ENERGY (mJ)
t
r
and t
f
(ns)
80
70
60
50
40
30
20
10
0
2500
2000
1500
1000
500
0
E
on
E
off
I
D
(A)
I
D
(A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
I
D
(A)
R
G
, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
T
J
=+150C
T
J
=+25C
V
DS
=300V
V
DS
=120V
V
DS
=480V
I
D
= 40A
t
d(on)
t
d(off)
V
DD
= 400V
R
G
= 5
T
J
= 125C
L = 100H
V
DD
= 400V
R
G
= 5
T
J
= 125C
L = 100H
E
on
includes
diode reverse recovery.
V
DD
= 400V
R
G
= 5
T
J
= 125C
L = 100H
t
r
t
f
180
160
140
120
100
80
60
40
20
0
2500
2000
1500
1000
500
0
V
DD
= 400V
I
D
= 40A
T
J
= 125C
L = 100H
E
on
includes
diode reverse recovery.
E
on
E
off
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
0
10
20
30
40
50
1
10
100
600
0
10
20
30
40
50
0
50
100
150
200
250
300
0.3
0.5
0.7
0.9
1.1
1.3
1.5
050-7236 Rev A 5-2005
Typical Performance Curves
APT40N60B2CF(G)_LCF(G)
Scope pics are placed with the place command
and then scaled to 50%
T-MAX
TM
(B2) Package Outline (B2CF)
TO-264 (L) Package Outline (LCF)
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
Figure 19, Turn-off Switching Waveforms and Definitions
Figure 18, Turn-on Switching Waveforms and Definitions
Drain Current
Drain Voltage
Gate Voltage
T
J
125C
10%
t
d(on)
90%
5%
t
r
5%
10%
APT30DQ60
ID
VDS
D.U.T.
V
DD
G
Figure 20, Inductive Switching Test Circuit
T
J
125C
10%
0
t
d(off)
t
f
Switching Energy
90%
90%
Drain Voltage
Gate Voltage
Drain Current
e1 SAC: Tin, Silver, Copper
e1 SAC: Tin, Silver, Copper
Switching Energy
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Drain
Source
Gate
These dimensions are equal to the TO-247 without the mounting hole.
D
r
a
i
n
2-Plcs.
19.51 (.768)
20.50 (.807)
19.81 (.780)
21.39 (.842)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
0.76 (.030)
1.30 (.051)
3.10 (.122)
3.48 (.137)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
2.59 (.102)
3.00 (.118)
0.48 (.019)
0.84 (.033)
Drain
Source
Gate
Dimensions in Millimeters and (Inches)
D
r
a
i
n
2.29 (.090)
2.69 (.106)
5.79 (.228)
6.20 (.244)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
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