050-7630 Rev A 11-2005
APT35GP120B2DQ2(G)
TYPICAL PERFORMANCE CURVES
MAXIMUM RATINGS
All Ratings: T
C
= 25C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 350A)
Gate Threshold Voltage (V
CE
= V
GE
, I
C
= 1mA, T
j
= 25C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 35A, T
j
= 25C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 35A, T
j
= 125C)
Collector Cut-off Current (V
CE
= 1200V, V
GE
= 0V, T
j
= 25C)
2
Collector Cut-off Current (V
CE
= 1200V, V
GE
= 0V, T
j
= 125C)
2
Gate-Emitter Leakage Current (V
GE
= 20V)
Symbol
V
(BR)CES
V
GE(TH)
V
CE(ON)
I
CES
I
GES
Units
Volts
A
nA
Symbol
V
CES
V
GE
I
C1
I
C2
I
CM
RBSOA
P
D
T
J
,T
STG
T
L
APT35GP120B2DQ2(G)
1200
30
96
46
140
140A @ 960V
543
-55 to 150
300
UNIT
Volts
Amps
Watts
C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
C
= 25C
Continuous Collector Current @ T
C
= 110C
Pulsed Collector Current
1
Reverse Bias Safe Operating Area @ T
J
= 150C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
APT Website - http://www.advancedpower.com
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
MIN
TYP
MAX
1200
3
4.5
6
3.3
3.9
3
350
3000
100
The POWER MOS 7
IGBT is a new generation of high voltage power IGBTs. Using Punch
Through Technology this IGBT is ideal for many high frequency, high voltage switching
applications and has been optimized for high frequency switchmode power supplies.
Low Conduction Loss
RBSOA Rated
Low Gate Charge
Ultrafast Tail Current shutoff
POWER MOS 7
IGBT
1200V
APT35GP120B2DQ2
APT35GP120B2DQ2G*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
C
E
G
T-Max
G
C
E
050-7630 Rev A 11-2005
APT35GP120B2DQ2(G)
THERMAL AND MECHANICAL CHARACTERISTICS
UNIT
C/W
gm
MIN
TYP
MAX
.23
.61
5.9
Characteristic
Junction to Case
(IGBT)
Junction to Case
(DIODE)
Package Weight
Symbol
R
JC
R
JC
W
T
DYNAMIC CHARACTERISTICS
Symbol
C
ies
C
oes
C
res
V
GEP
Q
g
Q
ge
Q
gc
RBSOA
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
Test Conditions
Capacitance
V
GE
= 0V, V
CE
= 25V
f = 1 MHz
Gate Charge
V
GE
= 15V
V
CE
= 600V
I
C
= 35A
T
J
= 150C, R
G
= 4.3, V
GE
=
15V, L = 100H,V
CE
= 960V
Inductive Switching (25C)
V
CC
= 600V
V
GE
= 15V
I
C
= 35A
R
G
= 4.3
T
J
= +25C
Inductive Switching (125C)
V
CC
= 600V
V
GE
= 15V
I
C
= 35A
R
G
= 4.3
T
J
= +125C
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge
3
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Reverse Bias Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
4
Turn-on Switching Energy (Diode)
5
Turn-off Switching Energy
6
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
4
4
Turn-on Switching Energy (Diode)
5
5
Turn-off Switching Energy
6
MIN
TYP
MAX
3240
250
31
7.5
150
21
60
140
16
20
95
40
750
1305
680
16
20
145
75
750
2130
1745
UNIT
pF
V
nC
A
ns
J
ns
J
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
2
For Combi devices, I
ces
includes both IGBT and FRED leakages
3
See MIL-STD-750 Method 3471.
4
E
on1
is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
5
E
on2
is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6
E
off
is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained h
050-7630 Rev A 11-2005
APT35GP120B2DQ2(G)
TYPICAL PERFORMANCE CURVES
BV
CES
, COLLECTOR-TO-EMITTER BREAKDOWN
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
VOLTAGE (NORMALIZED)
I
C,
DC COLLECTOR CURRENT(A)
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
250s PULSE
TEST<0.5 % DUTY
CYCLE
80
70
60
50
40
30
20
10
0
120
100
80
60
40
20
0
6
5
4
3
2
1
0
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
80
70
60
50
40
30
20
10
0
16
14
12
10
8
6
4
2
0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
140
120
100
80
60
40
20
0
T
J
= 125C
T
J
= 25C
T
J
= -55C
T
J
= 25C.
250s PULSE TEST
<0.5 % DUTY CYCLE
V
GE
= 15V.
250s PULSE TEST
<0.5 % DUTY CYCLE
T
J
= 125C
T
J
= 25C
T
J
= 125C
T
J
= 25C
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(T
J
= 25C)
FIGURE 2, Output Characteristics (T
J
= 125C)
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
GATE CHARGE (nC)
FIGURE 3, Transfer Characteristics
FIGURE 4, Gate Charge
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
T
J
, Junction Temperature (C)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
FIGURE 6, On State Voltage vs Junction Temperature
T
J
, JUNCTION TEMPERATURE (C)
T
C
, CASE TEMPERATURE (C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
FIGURE 8, DC Collector Current vs Case Temperature
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0
1
2
3
4
5
0 1 2 3 4
5 6
7 8 9 10
0
20 40 60 80 100 120 140 160
6
8
10
12
14
16
0
25
50
75
100
125
-50 -25
0
25
50
75
100 125
-50 -25
0
25 50 75 100 125 150
I
C
= 35A
T
J
= 25C
V
CE
= 960V
V
CE
= 600V
V
CE
= 240V
I
C
= 70A
I
C
= 35A
I
C
= 17.5A
I
C
= 70A
I
C
= 35A
I
C
= 17.5A
Lead Temperature
Limited
050-7630 Rev A 11-2005
APT35GP120B2DQ2(G)
V
GE
=15V,T
J
=125C
V
GE
=15V,T
J
=25C
V
CE
=
600V
R
G
=
4.3
L = 100H
SWITCHING ENERGY LOSSES (J)
E
ON2
, TURN ON ENERGY LOSS (J)
t
r,
RISE TIME (ns)
t
d(ON)
, TURN-ON DELAY TIME (ns)
SWITCHING ENERGY LOSSES (J)
E
OFF
, TURN OFF ENERGY LOSS (J)
t
f,
FALL TIME (ns)
t
d
(OFF)
, TURN-OFF DELAY TIME (ns)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
R
G
, GATE RESISTANCE (OHMS)
T
J
, JUNCTION TEMPERATURE (C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
V
CE
= 600V
V
GE
= +15V
R
G
= 4.3
R
G
=
4.3, L
=
100
H, V
CE
=
600V
V
CE
= 600V
T
J
= 25C
or 125C
R
G
= 4.3
L = 100H
25
20
15
10
5
0
50
40
30
20
10
0
5000
4000
3000
2000
1000
0
8000
7000
6000
5000
4000
3000
2000
1000
0
180
160
140
120
100
80
60
40
20
0
100
90
80
70
60
50
40
30
20
10
0
4000
3500
3000
2500
2000
1500
1000
500
0
5000
4000
3000
2000
1000
0
V
GE
= 15V
T
J
=
25 or 125C,V
GE
=
15V
V
CE
= 600V
V
GE
= +15V
R
G
= 4.3
V
CE
= 600V
V
GE
= +15V
R
G
= 4.3
10
20
30
40
50
60
70
80
10
20
30
40
50
60
70
80
10
20
30
40
50
60
70
80
10
20
30
40
50
60
70
80
10
20
30
40
50
60
70
80
10
20
30
40
50
60
70
80
0
10
20
30
40
50
0
25
50
75
100
125
R
G
=
4.3, L
=
100
H, V
CE
=
600V
T
J
=
125C, V
GE
=
15V
T
J
=
25C, V
GE
=
15V
T
J
=
125C
T
J
=
25C
T
J
=
125C
T
J
=
25C
E
on2,
70A
E
off,
70A
V
CE
= 600V
V
GE
= +15V
T
J
= 125C
E
on2,
35A
E
off,
35A
E
on2,
17.5A
E
off,
17.5A
E
on2,
70A
E
off,
70A
E
on2,
35A
E
off,
35A
E
on2,
17.5A
E
off,
17.5A
050-7630 Rev A 11-2005
APT35GP120B2DQ2(G)
TYPICAL PERFORMANCE CURVES
0.25
0.20
0.15
0.10
0.05
0
Z
JC
, THERMAL IMPEDANCE (C/W)
0.3
0.7
SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
10,000
1,000
500
100
50
10
160
140
120
100
80
60
40
20
0
C, CAPACITANCE (
P
F)
I
C
, COLLECTOR CURRENT (A)
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
V
CE
, COLLECTOR TO EMITTER VOLTAGE
Figure 17, Capacitance vs Collector-To-Emitter Voltage
Figure 18,Minimim Switching Safe Operating Area
0
10
20
30
40
50
0 100 200 300 400 500 600 700 800 900 1000
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
10
20
30
40
50
60
70
F
MAX
, OPERATING FREQUENCY (kHz)
I
C
, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
T
J
= 125
C
T
C
= 75
C
D = 50 %
V
CE
= 800V
R
G
= 5
180
100
50
10
7
0.5
0.1
0.05
F
max
=
min (f
max
, f
max2
)
0.05
f
max1
=
t
d(on)
+ t
r
+ t
d(off)
+ t
f
P
diss
- P
cond
E
on2
+ E
off
f
max2
=
P
diss
=
T
J
- T
C
R
JC
C
res
C
oes
C
ies
0.0896
0.140
0.0108
0.228
Power
(Watts)
RC MODEL
Junction
temp. ( C)
Case temperature
D = 0.9
Peak TJ = PDM x ZJC + TC
Duty Factor D =
t1
/
t2
t2
t1
P
DM
Note:
050-7630 Rev A 11-2005
APT35GP120B2DQ2(G)
Figure 22, Turn-on Switching Waveforms and Definitions
Figure 23, Turn-off Switching Waveforms and Definitions
APT40DQ120
I
C
A
D.U.T.
V
CE
Figure 21, Inductive Switching Test Circuit
V
CC
Collector Voltage
Collector Current
T
J
= 125 C
Gate Voltage
Switching Energy
10%
t
r
90%
5%
10%
5 %
t
d(on)
T
J
= 125 C
Gate Voltage
Collector Voltage
Collector Current
0
10%
t
f
90%
90%
t
d(off)
Switching
Energy
050-7630 Rev A 11-2005
APT35GP120B2DQ2(G)
TYPICAL PERFORMANCE CURVES
Characteristic / Test Conditions
Maximum Average Forward Current (T
C
= 112C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (T
J
= 45C, 8.3ms)
Symbol
I
F
(AV)
I
F
(RMS)
I
FSM
Symbol
V
F
Characteristic / Test Conditions
I
F
= 35A
Forward Voltage
I
F
= 70A
I
F
= 35A, T
J
= 125C
STATIC ELECTRICAL CHARACTERISTICS
UNIT
Amps
UNIT
Volts
MIN
TYP
MAX
2.7
3.28
2.07
APT35GP120B2DQ2(G)
40
63
210
DYNAMIC CHARACTERISTICS
MAXIMUM RATINGS
All Ratings: T
C
= 25C unless otherwise specified.
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MIN
TYP
MAX
-
26
-
350
-
570
-
4
-
-
430
-
2200
-
9
-
-
210
-
3400
-
29
UNIT
ns
nC
Amps
ns
nC
Amps
ns
nC
Amps
Characteristic
Reverse Recovery Time
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Symbol
t
rr
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Test Conditions
I
F
= 40A, di
F
/dt = -200A/s
V
R
= 800V, T
C
= 25C
I
F
= 40A, di
F
/dt = -200A/s
V
R
= 800V, T
C
= 125C
I
F
= 40A, di
F
/dt = -1000A/s
V
R
= 800V, T
C
= 125C
I
F
= 1A, di
F
/dt = -100A/s, V
R
= 30V, T
J
= 25C
FIGURE 24b, TRANSIENT THERMAL IMPEDANCE MODEL
Z
JC
, THERMAL IMPEDANCE (C/W)
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 24a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
0.70
0.60
0.50
0.40
0.30
0.20
0.10
0
0.5
SINGLE PULSE
0.1
0.3
0.7
0.05
Peak TJ = PDM x ZJC + TC
Duty Factor D =
t1
/
t2
t2
t1
P
DM
Note:
D = 0.9
0.0442
0.242
0.324
0.00222
0.00586
0.0596
Power
(watts)
Junction
temp
(C)
RC MODEL
Case temperature
(C)
050-7630 Rev A 11-2005
APT35GP120B2DQ2(G)
T
J
= 125C
V
R
= 800V
20A
40A
80A
600
500
400
300
200
100
0
35
30
25
20
15
10
5
0
Duty cycle = 0.5
T
J
= 175C
80
70
60
50
40
30
20
10
0
C
J
, JUNCTION CAPACITANCE
K
f
, DYNAMIC PARAMETE
RS
(pF)
(Normalized to 1000A/
s)
I
F(AV)
(A)
T
J
, JUNCTION TEMPERATURE (C)
Case Temperature (C)
Figure 29. Dynamic Parameters vs. Junction Temperature
Figure 30. Maximum Average Forward Current vs. CaseTemperature
V
R
, REVERSE VOLTAGE (V)
Figure 31. Junction Capacitance vs. Reverse Voltage
V
F
, ANODE-TO-CATHODE VOLTAGE (V)
-di
F
/dt, CURRENT RATE OF CHANGE(A/s)
Figure 25. Forward Current vs. Forward Voltage
Figure 26. Reverse Recovery Time vs. Current Rate of Change
-di
F
/dt, CURRENT RATE OF CHANGE (A/s)
-di
F
/dt, CURRENT RATE OF CHANGE (A/s)
Figure 27. Reverse Recovery Charge vs. Current Rate of Change
Figure 28. Reverse Recovery Current vs. Current Rate of Change
Q
rr
, REVERSE RECOVERY CHARGE
I
F
,
FORWARD CURRENT
(nC)
(A)
I
RRM
, REVERSE RECOVERY CURRENT
t
rr
, REVERSE RECOVERY TIME
(A)
(ns)
T
J
= 175C
T
J
= -55C
T
J
= 25C
T
J
= 125C
0
1
2
3
4
0
200
400
600
800 1000 1200
0
200
400
600
800 1000 1200
0
200
400
600
800 1000 1200
T
J
= 125C
V
R
= 800V
80A
20A
40A
120
100
80
60
40
20
0
5000
4500
4000
3500
3000
2500
2000
1500
1000
500
0
T
J
= 125C
V
R
= 800V
80A
40A
20A
t
rr
Q
rr
Q
rr
t
rr
I
RRM
1.2
1.0
0.8
0.6
0.4
0.2
0.0
200
150
100
50
0
0
25
50
75
100
125
150
25
50
75
100
125
150
175
1
10
100 200
050-7630 Rev A 11-2005
APT35GP120B2DQ2(G)
TYPICAL PERFORMANCE CURVES
APT10035LLL
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
e1 SAC: Tin, Silver, Copper
T-MAX
(B2) Package Outline
Dimensions in Millimeters and (Inches)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Collector
Emitte
Gate
Collector
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
4.50
(.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
2.87 (.113)
3.12 (.123)
2-Plcs.
4
3
1
2
5
5
Zero
1
2
3
4
di
F
/dt - Rate of Diode Current Change Through Zero Crossing.
I
F
- Forward Conduction Current
I
RRM
- Maximum Reverse Recovery Current.
trr - Reverse
R
ecovery Time, measured from zero crossing where
diode
Qrr - Area Under the Curve Defined by I
RRM
and trr.
current goes from positive to negative, to the point at which the straight
line through I
RRM
and 0.25 I
RRM
passes through zero.
Figure 32. Diode Test Circuit
Figure 33, Diode Reverse Recovery Waveform and Definitions
0.25 IRRM
PEARSON 2878
CURRENT
TRANSFORMER
di
F
/dt Adjust
30H
D.U.T.
+18V
0V
Vr
trr/Qrr
Waveform
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