PRELIMINAR
Y
MAXIMUM RATINGS (IGBT)
All Ratings: T
C
= 25
C unless otherwise specified.
052-6254 Rev A
G
C
E
The Fast IGBT
TM
is a new generation of high voltage power IGBTs. Using Non-
Punch Through Technology the Fast IGBTTM combined with an APT free-
wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior
ruggedness and fast switching speed.
Low Forward Voltage Drop
High Freq. Switching to 20KHz
Low Tail Current
Ultra Low Leakage Current
RBSOA and SCSOA Rated
Ultrafast Soft Recovery Antiparallel Diode
Fast IGBT
& FRED
APT33GF120B2RD
APT33GF120LRD
1200V
52A
TO-264
(LRD)
G
C
E
T-Max
TM
(B2RD)
G
C
E
APT33GF120B2RD
APT33GF120LRD
MIN
TYP
MAX
1200
4.5
5.5
6.5
2.7
3.2
3.3
3.9
0.5
5.0
100
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 0.5mA)
Gate Threshold Voltage (V
CE
= V
GE
, I
C
= 700
A, T
j
= 25
C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 25A, T
j
= 25
C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 25A, T
j
= 125
C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 25
C)
2
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 125
C)
2
Gate-Emitter Leakage Current (V
GE
=
20V, V
CE
= 0V)
Symbol
BV
CES
V
GE
(TH)
V
CE
(ON)
I
CES
I
GES
STATIC ELECTRICAL CHARACTERISTICS (IGBT)
UNIT
Volts
mA
nA
Symbol
V
CES
V
CGR
V
GE
I
C1
I
C2
I
CM1
I
CM2
P
D
T
J
,T
STG
T
L
Parameter
Collector-Emitter Voltage
Collector-Gate Voltage (R
GE
= 20K
)
Gate-Emitter Voltage
Continuous Collector Current @ T
C
= 25
C
Continuous Collector Current @ T
C
= 90
C
Pulsed Collector Current
1
@ T
C
= 25
C
Pulsed Collector Current
1
@ T
C
= 90
C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
UNIT
Volts
Amps
Watts
C
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
EUROPE
Avenue J.F. Kennedy Bt B4 Parc Cadra Nord
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
APT Website - http://www.advancedpower.com
APT33GF120B2RD/LRD
1200
1200
20
52
33
104
66
300
-55 to 150
300
052-6254 Rev A
PRELIMINAR
Y
Symbol
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d
(on)
t
r
t
d
(off)
t
f
t
d
(on)
t
r
t
d
(off)
t
f
E
on
E
off
E
ts
t
d
(on)
t
r
t
d
(off)
t
f
E
ts
gfe
DYNAMIC CHARACTERISTICS (IGBT)
APT33GF120B2RD/LRD
UNIT
C/W
oz
gm
lbin
Nm
MIN
TYP
MAX
0.42
0.90
40
0.22
6.1
10
1.1
Characteristic
Junction to Case (IGBT)
Junction to Case (FRED)
Junction to Ambient
Package Weight
Mounting Torque using a 6-32 or 3mm Binding Head Machine Screw
Symbol
R
JC
R
JA
W
T
Torque
THERMAL AND MECHANICAL CHARACTERISTICS (IGBT and FRED)
Test Conditions
Capacitance
V
GE
= 0V
V
CE
= 25V
f = 1 MHz
Gate Charge
V
GE
= 15V
V
CC
= 0.5V
CES
I
C
= I
C2
Resistive Switching (25
C)
V
GE
= 15V
V
CC
= 0.8V
CES
I
C
= I
C2
R
G
=10
Inductive Switching (150
C)
V
CLAMP
(Peak)
= 0.66V
CES
V
GE
= 15V
I
C
= I
C2
R
G
= 10
T
J
= +150
C
Inductive Switching (25
C)
V
CLAMP
(Peak)
= 0.66V
CES
V
GE
= 15V
I
C
= I
C2
R
G
= 10
T
J
= +25
C
V
CE
= 20V, I
C
= 25A
MIN
TYP
MAX
1650
2200
230
325
110
160
165
250
20
30
100
150
30
140
155
200
28
60
280
30
3.0
3.0
6.0
28
70
250
25
5.0
8.5
20
UNIT
pF
nC
ns
ns
mJ
ns
mJ
S
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
4
Turn-off Switching Energy
Total Switching Losses
4
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Switching Losses
4
Forward Transconductance
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
2
Leakages include the FRED and IGBT.
3
See MIL-STD-750 Method 3471
4
Switching losses include the FRED and IGBT.
APT Reserves the right to change, without notice, the specifications and information contained herein.
052-6254 Rev A
EUROPE
Avenue J.F. Kennedy Bt B4 Parc Cadra Nord
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
USA
405 S.W. Columbia Street
Bend, Oregon 97702 -1035
Phone: (541) 382-8028
FAX: (541) 388-0364
APT33GF120B2RD/LRD
PRELIMINARY
Power dissipation
P
tot
=
(
T
C
)
parameter:
T
j
150 C
0
20
40
60
80
100
120
C
160
T
C
0
40
80
120
160
200
240
W
320
P
tot
Collector current
I
C
=
(
T
C
)
parameter:
V
GE
15 V ,
T
j
150 C
0
20
40
60
80
100
120
C
160
T
C
0
5
10
15
20
25
30
35
40
45
A
55
I
C
Safe operating area
I
C
=
(
V
CE
)
parameter:
D
= 0
, T
C
= 25C ,
T
j
150 C
-1
10
0
10
1
10
2
10
3
10
A
I
C
10
0
10
1
10
2
10
3
V
V
CE
DC
10 ms
1 ms
100 s
10 s
t
p
= 2.0s
Transient thermal impedance IGBT
Z
th JC
=
(
t
p
)
parameter:
D = t
p
/
T
-3
10
-2
10
-1
10
0
10
K/W
Z
thJC
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
s
t
p
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
052-6254 Rev A
EUROPE
Avenue J.F. Kennedy Bt B4 Parc Cadra Nord
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
USA
405 S.W. Columbia Street
Bend, Oregon 97702 -1035
Phone: (541) 382-8028
FAX: (541) 388-036 4
APT33GF120B2RD/LRD
PRELIMINARY
Typ. output characteristics
I
C
=
f
(
V
CE
)
parameter:
t
p
= 80 s,
T
j
= 25 C
0
2
4
6
V
10
V
CE
0
5
10
15
20
25
30
35
40
45
A
55
I
C
17V
15V
13V
11V
9V
7V
Typ. output characteristics
I
C
=
f
(
V
CE
)
parameter:
t
p
= 80 s,
T
j
= 125 C
0
2
4
6
V
10
V
CE
0
5
10
15
20
25
30
35
40
45
A
55
I
C
17V
15V
13V
11V
9V
7V
Typ. transfer characteristics
I
C
=
f
(
V
GE
)
parameter:
t
p
=80s,
V
CE
=20 V
0
2
4
6
8
10
V
14
V
GE
0
5
10
15
20
25
30
35
40
45
50
A
60
I
C
1.0
1.5
2.0
2.5
3.0
3.5
2.0
2.5
3.0
3.5
4.0
4.5
Typ. gate charge
V
GE
=
(
Q
Gate
)
parameter:
I
C puls
= 25 A
0
20
40
60
80
100
120
140
170
Q
Gate
0
2
4
6
8
10
12
14
16
V
20
V
GE
800 V
600 V
Typ. capacitances
C
=
f
(
V
CE
)
parameter:
V
GE
= 0 V, f = 1 MHz
0
5
10
15
20
25
30
V
40
V
CE
-2
10
-1
10
0
10
1
10
nF
C
Ciss
Coss
Crss
Short circuit safe operating area
I
Csc
=
f
(
V
CE
) ,
T
j
= 150C
parameter: V
GE
= 15 V, t
sc
10 s, L < 25 nH
0
200
400
600
800
1000 1200
V
1600
V
CE
0
2
4
6
10
I
Csc
/I
C(90C)
Reverse biased safe operating area
I
Cpuls
=
f
(V
CE
) ,
T
j
= 150C
parameter: V
GE
= 15 V
0
200
400
600
800
1000 1200
V
1600
V
CE
0.0
0.5
1.0
1.5
2.5
I
Cpuls
/I
C
26A
C
ies
C
oes
C
res
PRELIMINAR
Y
Characteristic / Test Conditions
Maximum D.C. Reverse Voltage
Maximum Peak Repetitive Reverse Voltage
Maximum Working Peak Reverse Voltage
Maximum Average Forward Current (T
C
= 85
C, Duty Cycle = 0.5)
RMS Forward Current
Non-Repetitive Forward Surge Current (T
J
= 45
C, 8.3ms)
Symbol
V
R
V
RRM
V
RWM
I
F
(AV)
I
F
(RMS)
I
FSM
Symbol
V
F
Characteristic / Test Conditions
I
F
= 30A
Maximum Forward Voltage
I
F
= 60A
I
F
= 30A, T
J
= 150
C
STATIC ELECTRICAL CHARACTERISTICS (FRED)
UNIT
Volts
Amps
UNIT
Volts
MIN
TYP
MAX
2.5
2.0
2.0
APT33GF120B2RD/LRD
1200
30
70
210
MAXIMUM RATINGS (FRED)
All Ratings: T
C
= 25
C unless otherwise specified.
ULTRAFAST SOFT RECOVERY PARALLEL DIODE
052-6254 Rev A
MIN
TYP
MAX
70
85
70
160
255
255
7
12
12
20
660
1640
15
20
245
160
UNIT
ns
Amps
nC
Volts
A/
s
Characteristic
Reverse Recovery Time, I
F
= 1.0A, di
F
/dt
= -15A/
s, V
R
= 30V,
T
J
= 25
C
Reverse Recovery Time
T
J
= 25
C
I
F
= 30A, di
F
/dt
= -240A/
s, V
R
= 650V
T
J
= 100
C
Forward Recovery Time
T
J
= 25
C
I
F
= 30A, di
F
/dt
= 240A/
s, V
R
= 650V
T
J
= 100
C
Reverse Recovery Current
T
J
= 25
C
I
F
= 30A, di
F
/dt
= -240A/
s, V
R
= 650V
T
J
= 100
C
Recovery Charge
T
J
= 25
C
I
F
= 30A, di
F
/dt
= -240A/
s, V
R
= 650V
T
J
= 100
C
Forward Recovery Voltage
T
J
= 25
C
I
F
= 30A, di
F
/dt
= 240A/
s, V
R
= 650V
T
J
= 100
C
Rate of Fall of Recovery Current
T
J
= 25
C
I
F
= 30A, di
F
/dt
= -240A/
s, V
R
= 650V
(See Figure 10)
T
J
= 100
C
DYNAMIC CHARACTERISTICS (FRED)
Symbol
t
rr1
t
rr2
t
rr3
t
fr1
t
fr2
I
RRM1
I
RRM2
Q
rr1
Q
rr2
V
fr1
V
fr2
diM/dt
APT33GF120B2RD/LRD
PRELIMINAR
Y
Z
JC
, THERMAL IMPEDANCE
t
rr
, REVERSE RECOVERY TIME
I
RRM
, REVERSE RECOVERY CURRENT
I
F
, FORWARD CURRENT
(
C/W)
(nano-SECONDS)
(AMPERES)
(AMPERES)
t
fr
, FORWARD RECOVERY TIME
K
f
, DYNAMIC PARAMETERS
Q
rr
, REVERSE RECOVERY CHARGE
(nano-SECONDS)
(NORMALIZED)
(nano-COULOMBS)
V
fr
, FORWARD RECOVERY VOLTAGE
(VOLTS)
V
F
, ANODE-TO-CATHODE VOLTAGE (VOLTS)
di
F
/dt, CURRENT SLEW RATE (AMPERES/
SEC)
Figure 1, Forward Voltage Drop vs Forward Current
Figure 2, Reverse Recovery Charge vs Current Slew Rate
di
F
/dt, CURRENT SLEW RATE (AMPERES/
SEC)
T
J
, JUNCTION TEMPERATURE (
C)
Figure 3, Reverse Recovery Current vs Current Slew Rate
Figure 4, Dynamic Parameters vs Junction Temperature
di
F
/dt, CURRENT SLEW RATE (AMPERES/
SEC)
di
F
/dt, CURRENT SLEW RATE (AMPERES/
SEC)
Figure 5, Reverse Recovery Time vs Current Slew Rate
Figure 6, Forward Recovery Voltage/Time vs Current Slew Rate
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
APT33GF120B2RD/LRD
052-6254 Rev A
D=0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
NOTE:
DM
JC
C
J
=
+
DUTY FACTOR D = t
1 2
/
PEAK T
P x Z T
P
DM
t
2
t
t
1
0
1
2
3
4
10
50
100
500
1000
0
200
400
600
800
1000
-50
-25
0
25
50
75
100 125
150
0
200
400
600
800
1000
0
200
400
600
800
1000
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
100
80
60
40
20
0
50
40
30
20
10
0
250
200
150
100
50
0
1.0
0.5
0.1
0.05
0.01
0.005
0.001
TJ = 100
C
VR = 650V
2400
2000
1600
1200
800
400
0
2.0
1.6
1.2
0.8
0.4
0.0
2000
1600
1200
800
400
0
100
80
60
40
20
0
TJ = 100
C
VR = 650V
TJ = 100
C
VR = 650V
TJ = 100
C
VR = 650V
IF = 30A
t
rr
I
RRM
Q
rr
T
J
= -55
C
T
J
= 100
C
T
J
= 150
C
15A
30A
60A
15A
30A
60A
60A
30A
15A
V
fr
t
fr
T
J
= 25
C
t
rr
Q
rr
PRELIMINAR
Y
PRELIMINAR
Y
APT33GF120B2RD/LRD
052-6254 Rev A
PEARSON 411
CURRENT
TRANSFORMER
0.5 IRRM
di
F
/dt Adjust
30
H
D.U.T.
+15v
-15v
0v
Vr
Dimensions in Millimeters and (Inches)
Dimensions in Millimeters and (Inches)
4
3
1
2
5
5
0.75 IRRM
trr/Qrr
Waveform
Zero
6
1
2
3
4
6
di
F
/dt - Current Slew Rate, Rate of Forward
Current Change Through Zero Crossing.
I
F
- Forward Conduction Current
I
RRM
- Peak Reverse Recovery Current.
trr - Reverse Recovery Time Measured from Point of I
F
Qrr - Area Under the Curve Defined by I
RRM
and trr.
diM/dt - Maximum Rate of Current Change During the Trailing Portion of trr.
Current Falling Through Zero to a Tangent Line
{
diM/dt
}
Extrapolated Through Zero Defined by 0.75 and 0.50 I
RRM
.
6
Figure 25, Diode Reverse Recovery Test Circuit and Waveforms
Figure 8, Diode Reverse Recovery Waveform and Definitions
Qrr = 1/2
(
trr . I
RRM
)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Collector
(Cathode)
Emitter
(Anode)
Gate
Collector
(Cathode)
Emitter
(Anode)
Gate
Collector
(Cathode)
Collector
(Cathode)
19.51 (.768)
20.50 (.807)
19.81 (.780)
21.39 (.842)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
0.76 (.030)
1.30 (.051)
3.10 (.122)
3.48 (.137)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
2.59 (.102)
3.00 (.118)
0.48 (.019)
0.84 (.033)
2.29 (.090)
2.69 (.106)
5.79 (.228)
6.20 (.244)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
4.50
(.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
2.87 (.113)
3.12 (.123)
2-Plcs.
TO-264 Package Outline
T-MAXTM Package Outline
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