052-6268 Rev B 12-2005
APT25GT120BR(G)
TYPICAL PERFORMANCE CURVES
MAXIMUM RATINGS
All Ratings: T
C
= 25C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 1.5mA)
Gate Threshold Voltage (V
CE
= V
GE
, I
C
= 1mA, T
j
= 25C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 25A, T
j
= 25C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 25A, T
j
= 125C)
Collector Cut-off Current (V
CE
= 1200V, V
GE
= 0V, T
j
= 25C)
2
Collector Cut-off Current (V
CE
= 1200V, V
GE
= 0V, T
j
= 125C)
2
Gate-Emitter Leakage Current (V
GE
= 20V)
Symbol
V
(BR)CES
V
GE(TH)
V
CE(ON)
I
CES
I
GES
Units
Volts
A
nA
Symbol
V
CES
V
GE
I
C1
I
C2
I
CM
SSOA
P
D
T
J
,T
STG
T
L
APT25GT120BR(G)
1200
30
54
25
75
75A @ 1200V
347
-55 to 150
300
UNIT
Volts
Amps
Watts
C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
C
= 25C
Continuous Collector Current @ T
C
= 110C
Pulsed Collector Current
1
Switching Safe Operating Area @ T
J
= 150C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
APT Website - http://www.advancedpower.com
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
G
C
E
MIN
TYP
MAX
1200
4.5
5.5
6.5
2.7
3.2
3.7
3.9
100
TBD
120
1200V
APT25GT120BR
APT25GT120BRG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
The Thunderblot
IGBT
is a new generation of high voltage power IGBTs. Using Non- Punch
Through Technology, the Thunderblot
IGBT
offers superior ruggedness and ultrafast
switching speed.
Low Forward Voltage Drop
High Freq. Switching to 50KHz
Low Tail Current
Ultra Low Leakage Current
RBSOA and SCSOA Rated
Thunderbolt IGBT
TO-2
47
G
C
E
052-6268 Rev B 12-2005
APT25GT120BR(G)
THERMAL AND MECHANICAL CHARACTERISTICS
UNIT
C/W
gm
MIN
TYP
MAX
.36
N/A
5.9
Characteristic
Junction to Case
(IGBT)
Junction to Case
(DIODE)
Package Weight
Symbol
R
JC
R
JC
W
T
DYNAMIC CHARACTERISTICS
Symbol
C
ies
C
oes
C
res
V
GEP
Q
g
Q
ge
Q
gc
SSOA
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
Test Conditions
Capacitance
V
GE
= 0V, V
CE
= 25V
f = 1 MHz
Gate Charge
V
GE
= 15V
V
CE
= 600V
I
C
= 25A
T
J
= 150C, R
G
= 5, V
GE
=
15V, L = 100H,V
CE
= 1200V
Inductive Switching (25C)
V
CC
= 800V
V
GE
= 15V
I
C
= 25A
R
G
= 5
T
J
= +25C
Inductive Switching (125C)
V
CC
= 800V
V
GE
= 15V
I
C
= 25A
R
G
= 5
T
J
= +125C
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge
3
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Switching Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
4
Turn-on Switching Energy (Diode)
5
Turn-off Switching Energy
6
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
4
4
Turn-on Switching Energy (Diode)
5
5
Turn-off Switching Energy
6
MIN
TYP
MAX
1845
170
110
10.0
170
20
100
75
14
27
150
36
930
1860
720
14
27
175
45
925
3265
965
UNIT
pF
V
nC
A
ns
J
ns
J
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
2
For Combi devices, I
ces
includes both IGBT and FRED leakages
3
See MIL-STD-750 Method 3471.
4
E
on1
is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
5
E
on2
is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6
E
off
is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
052-6268 Rev B 12-2005
APT25GT120BR(G)
TYPICAL PERFORMANCE CURVES
V
GS(TH)
, THRESHOLD VOLTAGE
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
(NORMALIZED)
I
C,
DC COLLECTOR CURRENT(A)
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
I
C
= 25A
T
J
= 25C
250s PULSE
TEST<0.5 % DUTY
CYCLE
80
70
60
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
6
5
4
3
2
1
0
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0
2
4
6
8
0
5
10
15
20
0
2
4
6
8
10
12
14
0 20 40 60 80 100 120 140 160 180 200
6
8
10
12
14
16
0
25
50
75
100
125
150
-50 -25
0
25 50 75 100 125 150
-50 -25
0
25 50 75 100 125 150
100
80
60
40
20
0
16
14
12
10
8
6
4
2
0
6
5
4
3
2
1
0
80
70
60
50
40
30
20
10
0
T
J
= 125C
T
J
= 25C
T
J
= 25C.
250s PULSE TEST
<0.5 % DUTY CYCLE
V
GE
= 15V.
250s PULSE TEST
<0.5 % DUTY CYCLE
T
J
= 125C
T
J
= 25C
V
GE
= 15V
V
CE
= 960V
V
CE
= 600V
V
CE
= 240V
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(T
J
= 25C)
FIGURE 2, Output Characteristics (T
J
= 125C)
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
GATE CHARGE (nC)
FIGURE 3, Transfer Characteristics
FIGURE 4, Gate Charge
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
T
J
, Junction Temperature (C)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
FIGURE 6, On State Voltage vs Junction Temperature
T
J
, JUNCTION TEMPERATURE (C)
T
C
, CASE TEMPERATURE (C)
FIGURE 7, Threshold Voltage vs. Junction Temperature
FIGURE 8, DC Collector Current vs Case Temperature
I
C
= 12.5A
I
C
= 25A
I
C
= 50A
I
C
= 12.5A
I
C
= 25A
I
C
= 50A
T
J
= -55C
13V
11V
10V
9V
12V
8V
7V
15V
T
J
= -55C
052-6268 Rev B 12-2005
APT25GT120BR(G)
V
GE
=15V,T
J
=125C
V
GE
=15V,T
J
=25C
V
CE
=
800V
R
G
=
5
L = 100H
SWITCHING ENERGY LOSSES (J)
E
ON2
, TURN ON ENERGY LOSS (J)
t
r,
RISE TIME (ns)
t
d(ON)
, TURN-ON DELAY TIME (ns)
SWITCHING ENERGY LOSSES (J)
E
OFF
, TURN OFF ENERGY LOSS (J)
t
f,
FALL TIME (ns)
t
d
(OFF)
, TURN-OFF DELAY TIME (ns)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
R
G
, GATE RESISTANCE (OHMS)
T
J
, JUNCTION TEMPERATURE (C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
V
CE
= 800V
V
GE
= +15V
R
G
= 5
V
CE
= 800V
T
J
= 25C
,
or 125C
R
G
= 5
L = 100H
30
25
20
15
10
5
0
70
60
50
40
30
20
10
0
10,000
8,000
6,000
4,000
2,000
0
18,000
16,000
14,000
12,000
10,000
8,000
6,000
4,000
2,000
0
200
180
160
140
120
100
80
60
40
20
0
50
45
40
35
30
25
20
15
10
5
0
2500
2000
1500
1000
500
0
9,000
8,000
7,000
6,000
5,000
4,000
3,000
2,000
1,000
0
V
GE
= 15V
V
CE
= 800V
V
GE
= +15V
R
G
= 5
V
CE
= 800V
V
GE
= +15V
R
G
= 5
10 15 20 25 30 35 40 45 50 55
10 15 20 25 30 35 40 45 50 55
10 15 20 25 30 35 40 45 50 55
10 15 20 25 30 35 40 45 50 55
10 15 20 25 30 35 40 45 50 55
10 15 20 25 30 35 40 45 50 55
0
10
20
30
40
50
0
25
50
75
100
125
R
G
=
5, L
=
100
H, V
CE
=
800V
T
J
=
125C
T
J
=
25C
T
J
=
125C
T
J
=
25C
R
G
=
5, L
=
100
H, V
CE
=
800V
T
J
=
25 or 125C,V
GE
=
15V
T
J
=
125C, V
GE
=
15V
T
J
=
25C, V
GE
=
15V
E
on2,
50A
E
off,
50A
E
on2,
25A
E
off,
25A
E
on2,
12.5A
E
off,
12.5A
V
CE
= 800V
V
GE
= +15V
T
J
= 125C
E
on2,
50A
E
off,
50A
E
on2,
25A
E
off,
25A
E
on2,
12.5A
E
off,
12.5A
052-6268 Rev B 12-2005
APT25GT120BR(G)
TYPICAL PERFORMANCE CURVES
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
Z
JC
, THERMAL IMPEDANCE (C/W)
0.3
D = 0.9
0.7
SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
3,000
1,000
500
100
50
10
80
70
60
50
40
30
20
10
0
C, CAPACITANCE (
P
F)
I
C
, COLLECTOR CURRENT (A)
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
V
CE
, COLLECTOR TO EMITTER VOLTAGE
Figure 17, Capacitance vs Collector-To-Emitter Voltage
Figure 18,Minimim Switching Safe Operating Area
0
10
20
30
40
50
0
200 400 600 800 1000 1200 1400
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
5 10 15 20 25 30 35 40 45 50
F
MAX
, OPERATING FREQUENCY (kHz)
I
C
, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
T
J
= 125
C
T
C
= 75
C
D = 50 %
V
CE
= 800V
R
G
= 5
140
50
10
5
1
0.5
0.1
0.05
F
max
=
min (f
max
, f
max2
)
0.05
f
max1
=
t
d(on)
+ t
r
+ t
d(off)
+ t
f
P
diss
- P
cond
E
on2
+ E
off
f
max2
=
P
diss
=
T
J
- T
C
R
JC
C
oes
C
res
C
ies
0.178
0.182
0.0101
0.136
Power
(watts)
RC MODEL
Junction
temp. (C)
Case temperature. (C)
Peak TJ = PDM x ZJC + TC
Duty Factor D =
t1
/
t2
t2
t1
P
DM
Note:
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