050-7411 Rev B 4-2003
APT25GP120B
1200V
A new generation of high voltage power IGBTs. Using punch-through
technology and a proprietary metal gate, this IGBT has been optimized for
very fast switching, making it ideal for high frequency, high voltage switch-
mode power supplies and tail current sensitive applications. In many cases,
the POWER MOS 7
IGBT provides a lower cost alternative to a Power
MOSFET.
Low Conduction Loss
100 kHz operation @ 800V,11A
Low Gate Charge
50 kHz operation @ 800V, 19A
Ultrafast Tail Current shutoff
RBSOA Rated
MAXIMUM RATINGS
All Ratings: T
C
= 25C unless otherwise specified.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
STATIC ELECTRICAL CHARACTERISTICS
MIN
TYP
MAX
1200
3
4.5
6
3.3
3.9
3.0
250
2500
100
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 250A)
Gate Threshold Voltage (V
CE
= V
GE
, I
C
= 1mA, T
j
= 25C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 25A, T
j
= 25C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 25A, T
j
= 125C)
Collector Cut-off Current (V
CE
= 1200V, V
GE
= 0V, T
j
= 25C)
2
Collector Cut-off Current (V
CE
= 1200V, V
GE
= 0V, T
j
= 125C)
2
Gate-Emitter Leakage Current (V
GE
= 20V)
Symbol
BV
CES
V
GE(TH)
V
CE(ON)
I
CES
I
GES
UNIT
Volts
A
nA
Symbol
V
CES
V
GE
V
GEM
I
C1
I
C2
I
CM
RBSOA
P
D
T
J
,T
STG
T
L
APT25GP120B
1200
20
30
69
33
90
90A @ 960V
417
-55 to 150
300
UNIT
Volts
Amps
Watts
C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current @ T
C
= 25C
Continuous Collector Current @ T
C
= 110C
Pulsed Collector Current
1
@ T
C
= 25C
Reverse Bias Safe Operating Area @ T
J
= 150C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
TO-247
G
C
E
G
C
E
POWER MOS 7
IGBT
050-7411 Rev B 4-2003
APT25GP120B
DYNAMIC CHARACTERISTICS
Symbol
C
ies
C
oes
C
res
V
GEP
Q
g
Q
ge
Q
gc
RBSOA
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
Test Conditions
Capacitance
V
GE
= 0V, V
CE
= 25V
f = 1 MHz
Gate Charge
V
GE
= 15V
V
CE
= 600V
I
C
= 25A
T
J
= 150C, R
G
= 5
,
V
GE
=
15V, L = 100H,V
CE
= 960V
Inductive Switching (25C)
V
CLAMP
(Peak)
= 600V
V
GE
= 15V
I
C
= 25A
R
G
= 5
T
J
= +25C
Inductive Switching (125C)
V
CLAMP
(Peak)
= 600V
V
GE
= 15V
I
C
= 25A
R
G
= 5
T
J
= +125C
Characteristic
IInput Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge
3
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Reverse Bias Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
4
Turn-on Switching Energy (Diode)
5
Turn-off Switching Energy
6
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
4
Turn-on Switching Energy (Diode)
5
Turn-off Switching Energy
6
MIN
TYP
MAX
2090
200
40
7.5
110
15
50
90
12
14
70
39
500
1092
438
12
14
109
88
500
1577
1187
UNIT
pF
V
nC
A
ns
J
ns
J
UNIT
C/W
gm
MIN
TYP
MAX
.30
N/A
5.90
Characteristic
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
Symbol
R
JC
R
JC
W
T
THERMAL AND MECHANICAL CHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
ces
includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 E
on1
is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure 24.)
5 E
on2
is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 E
off
is the clamped inductive turn-off energy measured in accordance wtih JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
050-7411 Rev B 4-2003
TJ = 25C
TJ = -55C
TJ = 125C
250s PULSE TEST
<0.5 % DUTY CYCLE
TJ = 25C.
250s PULSE TEST
<0.5 % DUTY CYCLE
TYPICAL PERFORMANCE CURVES
T
C
=125C
T
C
=25C
VGE = 10V.
250s PULSE TEST
<0.5 % DUTY CYCLE
VGE = 15V.
250s PULSE TEST
<0.5 % DUTY CYCLE
VGE = 15V.
250s PULSE TEST
<0.5 % DUTY CYCLE
T
C
=25C
T
C
=125C
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(V
GE
= 15V)
FIGURE 2, Output Characteristics (V
GE
= 10V)
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
GATE CHARGE (nC)
FIGURE 3, Transfer Characteristics
FIGURE 4, Gate Charge
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
T
J
, JUNCTION TRMPERATURE (C)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
FIGURE 6, On State Voltage vs Junction Temperature
T
J
, JUNCTION TEMPERATURE (C)
T
C
, CASE TEMPERATURE (C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
FIGURE 8, DC Collector Current vs Case Temperature
BV
CES
, COLLECTOR-TO-EMITTER BREAKDOWN
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
VOLTAGE (NORMALIZED)
I
C,
DC COLLECTOR CURRENT(A)
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
APT25GP120B
IC = 25A
TJ = 25C
I
C=
50A
I
C=
25A
I
C=
12.5A
60
50
40
30
20
10
0
16
14
12
10
8
6
4
2
0
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
100
90
80
70
60
50
40
30
20
10
0
I
C=
12.5A
I
C=
25A
I
C=
50A
0
1
2
3
4
5
0
1
2
3
4
5
0
1
2
3
4
5
6
7
8
9
10
0
20
40
60
80
100
120
6
8
10
12
14
16
-25
0
25
50
75
100
125
-50
-25
0
25
50
75
100 125
-50
-25
0
25
50
75 100 125 150
V
CE
= 240V
V
CE
= 600V
V
CE
= 960V
60
50
40
30
20
10
0
100
80
60
40
20
0
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
1.2
1.15
1.10
1.05
1.0
0.95
0.90
0.85
0.8
050-7411 Rev B 4-2003
APT25GP120B
T
J
=
125C, V
GE
=
10V
or 15V
V
CE
= 600V
R
G
= 5
L
= 100 H
V
GE
= 15V
V
GE
= 10V
V
GE
=15V,T
J
=125C
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
R
G
, GATE RESISTANCE (OHMS)
T
J
, JUNCTION TEMPERATURE (C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
SWITCHING ENERGY LOSSES (J)
E
ON2
, TURN ON ENERGY LOSS (J)
t
r,
RISE TIME (ns)
t
d(ON)
, TURN-ON DELAY TIME (ns)
SWITCHING ENERGY LOSSES (J)
E
OFF
, TURN OFF ENERGY LOSS (J)
t
f,
FALL TIME (ns)
t
d
(OFF)
, TURN-OFF DELAY TIME (ns)
10
15
20
25
30
35
40
45
50
10
15
20
25
30
35
40
45
50
10
15
20
25
30
35
40
45
50
10
20
30
40
50
10
15
20
25
30
35
40
45
50
10
15
20
25
30
35
40
45
50
0
10
20
30
40
50
0
25
50
75
100
125
V
GE
=10V,T
J
=125C
V
GE
=15V,T
J
=25C
V
GE
=10V,T
J
=25C
T
J
=
25 or 125C,V
GE
=
10V
T
J
=
25C, V
GE
=
10V
or 15V
140
120
100
80
60
40
20
0
120
100
80
60
40
20
0
3000
2500
2000
1500
1000
500
0
3500
3000
2500
2000
1500
1000
500
0
T
J
=
25 or 125C,V
GE
=
15V
T
J
=
125C, V
GE
=
10V
or 15V
VCE = 600V
VGE = +15V
RG = 5
VCE = 600V
VGE = +15V
RG = 5
VCE = 600V
VGE = +15V
RG = 5
E
on2,
50A
E
off,
50A
E
on2,
25A
E
off,
25A
E
on2,
12.5A
E
off,
12.5A
T
J
=
125C,V
GE
=
10V
T
J
=
125C,V
GE
=
15V
T
J
=
25C,V
GE
=
10V
T
J
=
25C, V
GE
=
10V
or 15V
T
J
=
25C,V
GE
=
15V
25
20
15
10
5
0
100
80
60
40
20
0
3500
3000
2500
2000
1500
1000
500
0
4500
4000
3500
3000
2500
2000
1500
1000
500
0
V
CE
= 600V
T
J
= 25C, T
J
=125C
R
G
= 5
L = 100 H
R
G
=
5
, L
=
100
H, V
CE
=
600V
R
G
=
5
, L
=
100
H, V
CE
=
600V
E
on2,
50A
E
off,
50A
E
on2,
25A
E
off,
25A
E
on2,
12.5A
E
off,
12.5A
VCE = 600V
VGE = +15V
RG = 5
050-7411 Rev B 4-2003
C, CAPACITANCE (
P
F)
I
C
, COLLECTOR CURRENT (A)
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
V
CE
, COLLECTOR TO EMITTER VOLTAGE
Figure 17, Capacitance vs Collector-To-Emitter Voltage
Figure 18, Minimim Switching Safe Operating Area
Cres
Cies
Coes
TYPICAL PERFORMANCE CURVES
10,000
5,000
1,000
500
100
10
0
10
20
30
40
50
0
200
400
600
800
1000
APT25GP120B
max
max1
max 2
max1
d (on )
r
d(off )
f
diss
cond
max 2
on 2
off
J
C
diss
JC
F
min(f
, f
)
0.05
f
t
t
t
t
P
P
f
E
E
T
T
P
R
=
=
+ +
+
-
=
+
-
=
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x Z
JC + TC
t1
t2
P
DM
SINGLE PULSE
Z
JC
, THERMAL IMPEDANCE (C/W)
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
0.5
0.1
0.3
0.7
0.9
0.05
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
0.128
0.173
0.00833F
0.171F
RC MODEL
Case temperature(
C)
Junction
temp (
C)
Power
(watts)
5
10
15
20
25
30 35
40
45 50
F
MAX
, OPERATING FREQUENCY (kHz)
I
C
, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector
Current
TJ = 125
C
TC = 75
C
D = 50 %
VCE = 800V
RG = 5
182
100
50
10
100
90
80
70
60
50
40
20
0
050-7411 Rev B 4-2003
APT25GP120B
T0-247 Package Outline
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Collector
Collector
Emitter
Gate
5.45 (.215) BSC
Dimensions in Millimeters and (Inches)
2-Plcs.
Figure 22, Turn-on Switching Waveforms and Definitions
Figure 23, Turn-off Switching Waveforms and Definitions
*DRIVER SAME TYPE AS D.U.T.
I
C
V
CLAMP
100uH
V
TEST
A
A
B
D.U.T.
DRIVER*
V
CE
Figure 24, E
ON1
Test Circuit
0
t
f
Collector Voltage
Collector Current
10%
90%
T
J
= 125 C
t
d(off)
Gate Voltage
Switching Energy
90%
5 %
t
r
Collector Voltage
Collector Current
90%
T
J
= 125 C
5%
t
d(on)
Gate Voltage
Switching Energy
10%
10%
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
I
C
A
D.U.T.
APT15DF120
V
CE
Figure 21, Inductive Switching Test Circuit
V
CC
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