050-7042 Rev C 9-2004
MAXIMUM RATINGS
All Ratings: T
C
= 25C unless otherwise specified.
APT20M11JFLL
200V 176A 0.011
G
D
S
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
SOT-227
G
S
S
D
ISOTOP
"UL Recognized"
Lower Input Capacitance
Increased Power Dissipation
Lower Miller Capacitance
Easier To Drive
Lower Gate Charge, Qg
Popular SOT-227 Package
FAST RECOVERY BODY DIODE
Power MOS 7
is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
by significantly lowering R
DS(ON)
and Q
g
. Power MOS 7
combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
POWER MOS 7
R
FREDFET
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250A)
Drain-Source On-State Resistance
2
(V
GS
= 10V, I
D
= 88A)
Zero Gate Voltage Drain Current (V
DS
= 200V, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 160V, V
GS
= 0V, T
C
= 125C)
Gate-Source Leakage Current (V
GS
= 30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 5mA)
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
,T
STG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25C
Pulsed Drain Current
1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
C
= 25C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
1
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
Single Pulse Avalanche Energy
4
UNIT
Volts
Amps
Volts
Watts
W/C
C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Ohms
A
nA
Volts
MIN
TYP
MAX
200
0.011
250
1000
100
3
5
APT20M11JFLL
200
176
704
30
40
694
5.56
-55 to 150
300
176
50
3600
050-7042 Rev C 9-2004
DYNAMIC CHARACTERISTICS
APT20M11JFLL
Z
JC
, THERMAL IMPEDANCE (C/W)
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.20
0.15
0.10
0.05
0
0.5
0.1
0.3
0.7
0.9
0.05
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZJC + TC
t1
t2
P
DM
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
1
(Body Diode)
Diode Forward Voltage
2
(V
GS
= 0V, I
S
= -176A)
Peak Diode Recovery
dv
/
dt
5
Reverse Recovery Time
(I
S
= -176A,
di
/
dt
= 100A/s)
Reverse Recovery Charge
(I
S
= -176A,
di
/
dt
= 100A/s)
Peak Recovery Current
(I
S
= -176A,
di
/
dt
= 100A/s)
Symbol
I
S
I
SM
V
SD
dv
/
dt
t
rr
Q
rr
I
RRM
UNIT
Amps
Volts
V/ns
ns
C
Amps
MIN
TYP
MAX
176
704
1.3
8
T
j
= 25C
250
T
j
= 125C
500
T
j
= 25C
0.9
T
j
= 125C
2.5
T
j
= 25C
12
T
j
= 125C
20
Symbol
R
JC
R
JA
MIN
TYP
MAX
0.18
40
UNIT
C/W
Characteristic
Junction to Case
Junction to Ambient
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
on
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
6
Turn-off Switching Energy
Turn-on Switching Energy
6
Turn-off Switching Energy
Test Conditions
V
GS
= 0V
V
DS
= 25V
f
= 1 MHz
V
GS
= 10V
V
DD
= 100V
I
D
= 176A
@ 25C
RESISTIVE SWITCHING
V
GS
=
15V
V
DD
=
100V
I
D
=
176A
@ 25C
R
G
=
0.6
INDUCTIVE SWITCHING @ 25C
V
DD
=
133V, V
GS
= 15V
I
D
=
176A, R
G
=
5
INDUCTIVE SWITCHING @ 125C
V
DD
=
133V, V
GS
= 15V
I
D
=
176A, R
G
=
5
MIN
TYP
MAX
10320
4220
90
180
80
65
24
65
55
9
1190
2485
1260
2815
UNIT
pF
nC
ns
J
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting T
j
=
+25C, L = 0.23mH, R
G
=
25
, Peak I
L
= 176A
5
dv
/
dt
numbers reflect the limitations of the test circuit rather than the
device itself.
I
S
-
I
D
176A
di
/
dt
700A/s
V
R
V
DSS
T
J
150
C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and inforation contained herein.
050-7042 Rev C 9-2004
APT20M11JFLL
Typical Performance Curves
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 4, TRANSFER CHARACTERISTICS
FIGURE 5, R
DS(ON)
vs DRAIN CURRENT
T
C
, CASE TEMPERATURE (C)
T
J
, JUNCTION TEMPERATURE (C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
T
J
, JUNCTION TEMPERATURE (C)
T
C
, CASE TEMPERATURE (C)
FIGURE 8, R
DS(ON)
vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
R
DS(ON)
, DRAIN-TO-SOURCE ON RESISTANCE
I
D
, DRAIN CURRENT (AMPERES)
I
D
, DRAIN CURRENT (AMPERES)
(NORMALIZED)
V
GS(TH)
, THRESHOLD VOLTAGE
B
V
DSS
, DRAIN-TO-SOURCE BREAKDOWN
R
DS(ON)
, DRAIN-TO-SOURCE ON RESISTANCE
I
D
, DRAIN CURRENT (AMPERES)
(NORMALIZED)
VOLTAGE (NORMALIZED)
7.5V
5.5V
6V
6.5
VGS =15 &10V
7V
8V
TJ = +125C
TJ = +25C
TJ = -55C
VDS> ID (ON) x RDS(ON) MAX.
250 SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
VGS=10V
VGS=20V
0
5
10
15
20
25
30
0
2
4
6
8
10
0
50
100
150
200
250
300
350
25
50
75
100
125
150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75 100 125 150
350
300
250
200
150
100
50
0
180
160
140
120
100
80
60
40
20
0
2.5
2.0
1.5
1.0
0.5
0.0
I
D
= 88A
V
GS
= 10V
300
250
200
150
100
50
0
1.40
1.30
1.20
1.10
1.00
0.90
0.80
1.15
1.10
1.05
1.00
0.95
0.90
1.2
1.1
1.0
0.9
0.8
0.7
0.6
NORMALIZED TO
V
GS
= 10V @ I
D = 88A
0.0268
0.109
0.0426
0.0456F
0.765F
23.5F
Power
(watts)
Junction
temp. (
C)
RC MODEL
Case temperature. (
C)
050-7042 Rev C 9-2004
APT20M11JFLL
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Q
g
, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPERES)
I
DR
, REVERSE DRAIN CURRENT
(AMPERES)
C, CAPACITANCE (pF)
1
5
10
50
100 200
0
10
20
30
40
50
0
50
100
150
200
250
300
0.3
0.5
0.7
0.9
1.1
1.3
1.5
TC =+25C
TJ =+150C
SINGLE PULSE
704
500
100
50
10
16
14
12
10
8
6
4
2
0
I
D
= 176A
30,000
10,000
1,000
100
50
10
500
100
50
10
5
1
OPERATION HERE
LIMITED BY RDS (ON)
Crss
Coss
Ciss
10mS
100S
1mS
VDS=100V
VDS=40V
VDS=160V
TJ =+150C
TJ =+25C
I
D
(A)
I
D
(A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
I
D
(A)
R
G
, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
V
DD = 130V
R
G = 5
T
J = 125C
L = 100H
t
d(on)
t
d(off)
E
on
E
off
E
on
E
off
t
r
t
f
SWITCHING ENERGY (
J)
t
d(on)
and t
d(off)
(ns)
SWITCHING ENERGY (
J)
t
r
and t
f
(ns)
V
DD = 130V
R
G = 5
T
J = 125C
L = 100H
V
DD = 130V
I
D = 176A
T
J = 125C
L = 100H
E
ON
includes
diode reverse recovery.
V
DD = 130V
R
G = 5
T
J = 125C
L = 100H
E
ON
includes
diode reverse recovery.
30
60
90
120 150 180 210 240 270
30
60
90
120 150 180 210 240 270
30
60
90
120 150 180 210 240 270
0
5
10 15 20 25 30
35 40 45 50
160
140
120
100
80
60
40
20
0
8000
6000
4000
2000
0
300
250
200
150
100
50
0
10000
8000
6000
4000
2000
0
050-7042 Rev C 9-2004
APT20M11JFLL
Typical Performance Curves
SOT-227 (ISOTOP
) Package Outline
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
* Source
Drain
Gate
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
* Source
Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
ISOTOP
is a Registered Trademark of SGS Thomson.
Figure 19, Turn-off Switching Waveforms and Definitions
Figure 18, Turn-on Switching Waveforms and Definitions
Drain Current
Drain Voltage
Gate Voltage
T
J
125C
10%
0
t
d(off)
t
f
90%
90%
I
D
D.U.T.
V
DS
Figure 20, Inductive Switching Test Circuit
V
DD
G
APT2X101D20
Switching Energy
Drain Current
Drain Voltage
Gate Voltage
T
J
125C
Switching Energy
10%
t
d(on)
90%
5%
t
r
5%
10%
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