PRELIMINAR
Y
G
C
E
TO-247
G
C
E
MIN
TYP
MAX
600
3
4
5
1.6
2.0
2.5
2.8
40
200
100
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 0.5mA, T
j
= -55
C)
Gate Threshold Voltage (V
CE
= V
GE
, I
C
= 700
A, T
j
= 25
C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= I
C2
, T
j
= 25
C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= I
C2
, T
j
= 150
C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 25
C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 150
C)
Gate-Emitter Leakage Current (V
GE
=
25V, V
CE
= 0V)
Symbol
BV
CES
V
GE
(TH)
V
CE
(ON)
I
CES
I
GES
MAXIMUM RATINGS (IGBT)
All Ratings: T
C
= 25
C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS (IGBT)
UNIT
Volts
A
nA
Symbol
V
CES
V
CGR
V
GE
I
C1
I
C2
I
CM1
I
CM2
E
AS
P
D
T
J
,T
STG
T
L
Parameter
Collector-Emitter Voltage
Collector-Gate Voltage (R
GE
= 20K
)
Gate-Emitter Voltage
Continuous Collector Current @ T
C
= 25
C
Continuous Collector Current @ T
C
= 110
C
Pulsed Collector Current
1
@ T
C
= 25
C
Pulsed Collector Current
1
@ T
C
= 110
C
Single Pulse Avalanche Energy
2
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
APT15GT60BRD
600
600
20
30
15
60
30
24
125
-55 to 150
300
UNIT
Volts
Amps
mJ
Watts
C
052-6250 Rev -
APT15GT60BRD
600V
30A
The Thunderbolt IGBT
TM
is a new generation of high voltage power IGBTs.
Using Non-Punch Through Technology the Thunderbolt IGBTTM combined
with an APT free-wheeling ultraFast Recovery Epitaxial Diode (FRED) offers
superior ruggedness and ultrafast switching speed.
Low Forward Voltage Drop
High Freq. Switching to 150KHz
Low Tail Current
Ultra Low Leakage Current
Avalanche Rated
RBSOA and SCSOA Rated
Ultrafast Soft Recovery Antiparallel Diode
Thunderbolt IGBT
TM
& FRED
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
EUROPE
Avenue J.F. Kennedy Bt B4 Parc Cadra Nord
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
APT Website - http://www.advancedpower.com
PRELIMINAR
Y
Symbol
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d
(on)
t
r
t
d
(off)
t
f
t
d
(on)
t
r
t
d
(off)
t
f
E
on
E
off
E
ts
t
d
(on)
t
r
t
d
(off)
t
f
E
ts
gfe
DYNAMIC CHARACTERISTICS (IGBT)
APT15GT60BRD
UNIT
C/W
oz
gm
lbin
Nm
MIN
TYP
MAX
1.0
2.0
40
0.22
6.1
10
1.1
Characteristic
Junction to Case (IGBT)
Junction to Case (FRED)
Junction to Ambient
Package Weight
Mounting Torque using a 6-32 or 3mm Binding Head Machine Screw
Symbol
R
JC
R
JA
W
T
Torque
THERMAL AND MECHANICAL CHARACTERISTICS (IGBT and FRED)
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
4
Turn-off Switching Energy
Total Switching Losses
4
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Switching Losses
4
Forward Transconductance
Test Conditions
Capacitance
V
GE
= 0V
V
CE
= 25V
f = 1 MHz
Gate Charge
V
GE
= 15V
V
CC
= 0.66V
CES
I
C
= 0.8I
C2
Resistive Switching (25
C)
V
GE
= 15V
V
CC
= 0.66V
CES
I
C
= 0.8I
C2
R
G
= 5
Inductive Switching (150
C)
V
CLAMP
(Peak)
= 0.66V
CES
V
GE
= 15V
I
C
= 0.8I
C2
R
G
= 5
T
J
= +150
C
Inductive Switching (25
C)
V
CLAMP
(Peak)
= 0.66V
CES
V
GE
= 15V
I
C
= 0.8I
C2
R
G
= 5
T
J
= +25
C
V
CE
= 20V, I
C
= I
C2
MIN
TYP
MAX
825
90
52
53
37
7
6
18
48
78
13
34
84
55
0.29
0.29
0.58
13
35
73
34
0.45
3
UNIT
pF
nC
ns
ns
mJ
ns
mJ
S
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
2
I
C
= I
C2
,
V
CC
= 50V,
R
GE
= 25
,
L = 200
H, T
j
= 25
C
3
See MIL-STD-750 Method 3471
4
Switching losses include the FRED and IGBT.
APT Reserves the right to change, without notice, the specifications and information contained herein.
052-6250 Rev -
PRELIMINAR
Y
Characteristic / Test Conditions
Maximum D.C. Reverse Voltage
Maximum Peak Repetitive Reverse Voltage
Maximum Working Peak Reverse Voltage
Maximum Average Forward Current (T
C
= 90
C, Duty Cycle = 0.5)
RMS Forward Current
Non-Repetitive Forward Surge Current (T
J
= 45
C, 8.3ms)
Symbol
V
R
V
RRM
V
RWM
I
F
(AV)
I
F
(RMS)
I
FSM
Symbol
V
F
I
RM
L
S
Characteristic / Test Conditions
I
F
= 15A
Maximum Forward Voltage
I
F
= 30A
I
F
= 15A, T
J
= 150
C
Maximum Reverse Leakage Current
V
R
= V
R
Rated
V
R
= V
R
Rated, T
J
= 125
C
Series Inductance (Lead to Lead 5mm from Base)
STATIC ELECTRICAL CHARACTERISTICS (FRED)
UNIT
Volts
Amps
UNIT
Volts
A
nH
MIN
TYP
MAX
1.8
1.6
1.6
150
500
10
APT15GT60BRD
600
15
25
110
MAXIMUM RATINGS (FRED)
All Ratings: T
C
= 25
C unless otherwise specified.
ULTRAFAST SOFT RECOVERY PARALLEL DIODE
052-6250 Rev -
Maximum Reverse Leakage Current
MIN
TYP
MAX
40
50
40
80
170
170
2.5
5
3
6
50
120
2.2
2.2
200
100
UNIT
ns
Amps
nC
Volts
A/
s
Characteristic
Reverse Recovery Time, I
F
= 1.0A, di
F
/dt
= -15A/
s, V
R
= 30V,
T
J
= 25
C
Reverse Recovery Time
T
J
= 25
C
I
F
= 15A, di
F
/dt
= -100A/
s, V
R
= 350V
T
J
= 100
C
Forward Recovery Time
T
J
= 25
C
I
F
= 15A, di
F
/dt
= 100A/
s, V
R
= 350V
T
J
= 100
C
Reverse Recovery Current
T
J
= 25
C
I
F
= 15A, di
F
/dt
= -100A/
s, V
R
= 350V
T
J
= 100
C
Recovery Charge
T
J
= 25
C
I
F
= 15A, di
F
/dt
= -100A/
s, V
R
= 350V
T
J
= 100
C
Forward Recovery Voltage
T
J
= 25
C
I
F
= 15A, di
F
/dt
= 100A/
s, V
R
= 350V
T
J
= 100
C
Rate of Fall of Recovery Current
T
J
= 25
C
I
F
= 15A, di
F
/dt
= -100A/
s, V
R
= 350V (See Figure 10)
T
J
= 100
C
DYNAMIC CHARACTERISTICS (FRED)
Symbol
t
rr1
t
rr2
t
rr3
t
fr1
t
fr2
I
RRM1
I
RRM2
Q
rr1
Q
rr2
V
fr1
V
fr2
diM/dt
APT15GT60BRD
PRELIMINAR
Y
Z
JC
, THERMAL IMPEDANCE
t
rr
, REVERSE RECOVERY TIME
I
RRM
, REVERSE RECOVERY CURRENT
I
F
, FORWARD CURRENT
(
C/W)
(nano-SECONDS)
(AMPERES)
(AMPERES)
t
fr
, FORWARD RECOVERY TIME
K
f
, DYNAMIC PARAMETERS
Q
rr
, REVERSE RECOVERY CHARGE
(nano-SECONDS)
(NORMALIZED)
(nano-COULOMBS)
V
fr
, FORWARD RECOVERY VOLTAGE
(VOLTS)
V
F
, ANODE-TO-CATHODE VOLTAGE (VOLTS)
di
F
/dt, CURRENT SLEW RATE (AMPERES/
SEC)
Figure 1, Forward Voltage Drop vs Forward Current
Figure 2, Reverse Recovery Charge vs Current Slew Rate
di
F
/dt, CURRENT SLEW RATE (AMPERES/
SEC)
T
J
, JUNCTION TEMPERATURE (
C)
Figure 3, Reverse Recovery Current vs Current Slew Rate
Figure 4, Dynamic Parameters vs Junction Temperature
di
F
/dt, CURRENT SLEW RATE (AMPERES/
SEC)
di
F
/dt, CURRENT SLEW RATE (AMPERES/
SEC)
Figure 5, Reverse Recovery Time vs Current Slew Rate
Figure 6, Forward Recovery Voltage/Time vs Current Slew Rate
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
APT15GT60BRD
052-6250 Rev -
D=0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
NOTE:
DM
JC
C
J
=
+
DUTY FACTOR D = t
1 2
/
PEAK T
P x Z T
P
DM
t
2
t
t
1
0
1
2
3
10
50
100
500
1000
0
200
400
600
800
1000
-50
-25
0
25
50
75
100 125
150
0
200
400
600
800
1000
0
200
400
600
800
1000
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
TJ = 100
C
VR = 350V
TJ = 100
C
VR = 350V
15A
7.5A
15A
30A
Q
rr
t
rr
Q
rr
I
RRM
t
rr
30A
7.5A
TJ = 100
C
VR = 350V
30A
15A
7.5A
60
50
40
30
20
10
0
40
30
20
10
0
100
80
60
40
20
0
2.0
1.0
0.5
0.1
0.05
0.01
0.005
T
J
= 150
C
T
J
= 100
C
T
J
= 25
C
T
J
= -55
C
TJ = 100
C
VR = 350V
IF = 15A
V
fr
1200
1000
800
600
400
200
0
2.0
1.6
1.2
0.8
0.4
0.0
500
400
300
200
100
0
25
20
15
10
5
0
t
fr
PRELIMINAR
Y
APT15GT60BRD
052-6250 Rev -
PRELIMINAR
Y
PEARSON 411
CURRENT
TRANSFORMER
0.5 IRRM
di
F
/dt Adjust
30
H
D.U.T.
+15v
-15v
0v
Vr
Dimensions in Millimeters and (Inches)
4
3
1
2
5
5
0.75 IRRM
trr/Qrr
Waveform
Zero
6
1
2
3
4
6
di
F
/dt - Current Slew Rate, Rate of Forward
Current Change Through Zero Crossing.
I
F
- Forward Conduction Current
I
RRM
- Peak Reverse Recovery Current.
trr - Reverse Recovery Time Measured from Point of I
F
Qrr - Area Under the Curve Defined by I
RRM
and trr.
diM/dt - Maximum Rate of Current Change During the Trailing Portion of trr.
Current Falling Through Zero to a Tangent Line
{
diM/dt
}
Extrapolated Through Zero Defined by 0.75 and 0.50 I
RRM
.
6
Figure 25, Diode Reverse Recovery Test Circuit and Waveforms
Figure 8, Diode Reverse Recovery Waveform and Definitions
Qrr = 1/2
(
trr . I
RRM
)
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
3.55 (.140)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
2-Plcs.
Collector
(Cathode)
Emitter
(Anode)
Gate
Collector
(Cathode)
TO-247 Package Outline
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