050-7428 Rev B 4-2003
APT15GP60BDF1
600V
The POWER MOS 7
IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
Low Conduction Loss
100 kHz operation @ 400V, 19A
Low Gate Charge
200 kHz operation @ 400V, 12A
Ultrafast Tail Current shutoff
SSOA rated
MAXIMUM RATINGS
All Ratings: T
C
= 25C unless otherwise specified.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
STATIC ELECTRICAL CHARACTERISTICS
MIN
TYP
MAX
600
3
4.5
6
2.2
2.7
2.1
500
3000
100
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 500A)
Gate Threshold Voltage (V
CE
= V
GE
, I
C
= 1mA, T
j
= 25C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 15A, T
j
= 25C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 15A, T
j
= 125C)
Collector Cut-off Current (V
CE
= 600V, V
GE
= 0V, T
j
= 25C)
2
Collector Cut-off Current (V
CE
= 600V, V
GE
= 0V, T
j
= 125C)
2
Gate-Emitter Leakage Current (V
GE
= 20V)
Symbol
BV
CES
V
GE(TH)
V
CE(ON)
I
CES
I
GES
UNIT
Volts
A
nA
Symbol
V
CES
V
GE
V
GEM
I
C1
I
C2
I
CM
SSOA
P
D
T
J
,T
STG
T
L
APT15GP60BDF1
600
20
30
56
27
65
65A @ 600V
250
-55 to 150
300
UNIT
Volts
Amps
Watts
C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current @ T
C
= 25C
Continuous Collector Current @ T
C
= 110C
Pulsed Collector Current
1
@ T
C
= 25C
Switching Safe Operating Area @ T
J
= 150C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
TO-247
G
C
E
POWER MOS 7
IGBT
G
C
E
050-7428 Rev B 4-2003
APT15GP60BDF1
DYNAMIC CHARACTERISTICS
Symbol
C
ies
C
oes
C
res
V
GEP
Q
g
Q
ge
Q
gc
SSOA
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
Test Conditions
Capacitance
V
GE
= 0V, V
CE
= 25V
f = 1 MHz
Gate Charge
V
GE
= 15V
V
CE
= 300V
I
C
= 15A
T
J
= 150C, R
G
= 5
,
V
GE
=
15V, L = 100H,V
CE
= 600V
Inductive Switching (25C)
V
CC
= 400V
V
GE
= 15V
I
C
= 15A
R
G
= 5
T
J
= +25C
Inductive Switching (125C)
V
CC
= 400V
V
GE
= 15V
I
C
= 15A
R
G
= 5
T
J
= +125C
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge
3
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Switching Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
4
Turn-on Switching Energy (Diode)
5
Turn-off Switching Energy
6
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
4
4
Turn-on Switching Energy (Diode)
5
5
Turn-off Switching Energy
6
6
MIN
TYP
MAX
1685
210
15
7.5
55
12
15
65
8
12
29
58
130
152
121
8
12
69
88
130
267
268
UNIT
pF
V
nC
A
ns
J
ns
J
UNIT
C/W
gm
MIN
TYP
MAX
.50
1.31
5.90
Characteristic
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
Symbol
R
JC
R
JC
W
T
THERMAL AND MECHANICAL CHARACTERISTICS
1
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
ces
includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 E
on1
is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure 24.)
5 E
on2
is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. A Combi device is used for the clamping diode as shown in the E
on2
test circuit. (See Figures 21, 22.)
6 E
off
is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
050-7428 Rev B 4-2003
TYPICAL PERFORMANCE CURVES
APT15GP60BDF1
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(V
GE
= 15V)
FIGURE 2, Output Characteristics (V
GE
= 10V)
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
GATE CHARGE (nC)
FIGURE 3, Transfer Characteristics
FIGURE 4, Gate Charge
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
T
J
, Junction Temperature (C)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
FIGURE 6, On State Voltage vs Junction Temperature
T
J
, JUNCTION TEMPERATURE (C)
T
C
, CASE TEMPERATURE (C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
FIGURE 8, DC Collector Current vs Case Temperature
BV
CES
, COLLECTOR-TO-EMITTER BREAKDOWN
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
VOLTAGE (NORMALIZED)
I
C,
DC COLLECTOR CURRENT(A)
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
3
0
2
4
6
8
10
12
0
10
20
30
40
50
60
6
8
10
12
14
16
-50
-25
0
25
50
75
100
125
-50
-25
0
25
50
75
100 125
-50
-25
0
25
50
75 100 125 150
TJ = 25C.
250s PULSE TEST
<0.5 % DUTY CYCLE
T
C
=-55C
T
C
=125C
T
C
=25C
V
CE
= 480V
V
CE
= 300V
V
CE
= 120V
VGE = 10V.
250s PULSE TEST
<0.5 % DUTY CYCLE
VGE = 15V.
250s PULSE TEST
<0.5 % DUTY CYCLE
VGE = 15V.
250s PULSE TEST
<0.5 % DUTY CYCLE
IC = 15A
TJ = 25C
TJ = 25C
TJ = -55C
TJ = 125C
T
C
=-55C
T
C
=25C
T
C
=125C
250s PULSE TEST
<0.5 % DUTY CYCLE
I
C
= 7.5A
I
C
= 15A
I
C
=30A
I
C
=30A
I
C
= 7.5A
30
25
20
15
10
5
0
100
80
60
40
20
0
3.5
3
2.5
2
1.5
1
0.5
0
1.2
1.15
1.10
1.05
1.0
0.95
0.9
0.85
0.8
30
25
20
15
10
5
0
16
14
12
10
8
6
4
2
0
3.5
3
2.5
2
1.5
1
0.5
0
80
70
60
50
40
30
20
10
0
I
C
= 15A
050-7428 Rev B 4-2003
APT15GP60BDF1
T
J
=
125C, V
GE
=
10V
or 15V
T
J
=
25C, V
GE
=
10V
or 15V
V
CE
= 400V
R
G
= 5
L = 100 H
V
GE
=
15V,T
J
=125C
V
GE
= 15V
V
GE
= 10V
V
GE
=10V,T
J
=125C
V
GE
=
10V,T
J
=25C
V
GE
=
15V,T
J
=25C
T
J
=
25C, V
GE
=
10V
or 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
R
G
, GATE RESISTANCE (OHMS)
T
J
, JUNCTION TEMPERATURE (C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
R
G
=
5
, L
=
100
H, V
CE
=
400V
R
G
=
5
, L
=
100
H, V
CE
=
400V
VCE = 400V
L = 100 H
RG = 5
T
J
=
25 or 125C,V
GE
=
15V
T
J
=
25 or 125C,V
GE
=
10V
VCE = 400V
VGE = +15V
RG = 5
SWITCHING ENERGY LOSSES (J)
E
ON2
, TURN ON ENERGY LOSS (J)
t
r,
RISE TIME (ns)
t
d(ON)
, TURN-ON DELAY TIME (ns)
SWITCHING ENERGY LOSSES (J)
E
OFF
, TURN OFF ENERGY LOSS (J)
t
f,
FALL TIME (ns)
t
d
(OFF)
, TURN-OFF DELAY TIME (ns)
VCE = 400V
VGE = +15V
T
J
= 125C
VCE = 400V
L = 100 H
RG = 5
T
J
=125C, V
GE
=15V
T
J
=
125C, V
GE
=
10V
or 15V
T
J
=125C,V
GE
=10V
T
J
= 25C, V
GE
=10V
T
J
= 25C, V
GE
=15V
5
10
15
20
25
30
5
10
15
20
25
30
5
10
15
20
25
30
5
10
15
20
25
30
0
5
10
15
20
25
30
5
10
15
20
25
30
0
10
20
30
40
50
-50
-25
0
25
50
75
100
125
18
16
14
12
10
8
6
4
2
0
30
25
20
15
10
5
0
700
600
500
400
300
200
100
0
900
800
700
600
500
400
300
200
100
0
80
70
60
50
40
30
20
10
0
100
80
60
40
20
0
700
600
500
400
300
200
100
0
700
600
500
400
300
200
100
0
E
off
30A
E
on2
30A
E
on2
7.5A
E
off
15A
E
on2
15A
E
off
7.5A
E
on2
7.5A
E
off
15A
E
on2
15A
E
on2
30A
E
off
30A
E
off
7.5A
V
CE
= 400V
T
J
= 25C or 125C
R
G
= 5
L = 100 H
050-7428 Rev B 4-2003
TYPICAL PERFORMANCE CURVES
APT15GP60BDF1
4,000
1,000
500
100
50
10
70
60
50
40
30
20
10
0
C, CAPACITANCE (
P
F)
I
C
, COLLECTOR CURRENT (A)
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
V
CE
, COLLECTOR TO EMITTER VOLTAGE
Figure 17, Capacitance vs Collector-To-Emitter Voltage
Figure 18, Minimim Switching Safe Operating Area
0
10
20
30
40
50
0
100
200
300
400
500
600
700
Cies
Coes
Cres
0.60
0.50
0.40
0.30
0.20
0.10
0
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x Z
JC + TC
t1
t2
P
DM
Z
JC
, THERMAL IMPEDANCE (C/W)
0.3
0.9
0.7
0.1
0.05
0.5
SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19A, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
max
max1
max 2
max1
d (on )
r
d(off )
f
diss
cond
max 2
on 2
off
J
C
diss
JC
F
min(f
, f
)
0.05
f
t
t
t
t
P
P
f
E
E
T
T
P
R
=
=
+ +
+
-
=
+
-
=
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
5
10
15 20
25
30
35
40
45
50
292
100
50
10
F
MAX
, OPERATING FREQUENCY (kHz)
I
C
, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
TJ = 125
C
TC = 75
C
D = 50 %
VCE = 400V
RG = 5
0.216
0.284
0.00600
0.164
Power
(Watts)
RC MODEL
Junction
temp. ( "C)
Case temperature
050-7428 Rev B 4-2003
APT15GP60BDF1
T
T
J
= 125 C
Gate Voltage
Collector Voltage
Collector Current
0
90%
90%
t
d(off)
t
f
10%
Switching Energy
Figure 22, Turn-on Switching Waveforms and Definitions
Figure 23, Turn-off Switching Waveforms and Definitions
10%
Collector Current
Collector Voltage
Gate Voltage
t
d(on)
90%
t
r
5%
5 %
10%
Switching Energy
T
J
= 125 C
*DRIVER SAME TYPE AS D.U.T.
I
C
V
CLAMP
100uH
V
TEST
A
A
B
D.U.T.
DRIVER*
V
CE
Figure 24, EON1 Test Circuit
I
C
A
D.U.T.
APT15DF60
V
CE
Figure 21, Inductive Switching Test Circuit
V
CC
050-7428 Rev B 4-2003
TYPICAL PERFORMANCE CURVES
APT15GP60BDF1
Characteristic / Test Conditions
Maximum Average Forward Current (T
C
= 94C, Duty Cycle = 0.5)
RMS Forward Current
Non-Repetitive Forward Surge Current (T
J
= 45C, 8.3ms)
Symbol
I
F
(AV)
I
F
(RMS)
I
FSM
Symbol
V
F
Characteristic / Test Conditions
I
F
= 15A
Forward Voltage
I
F
= 30A
I
F
= 15A, T
J
= 150C
STATIC ELECTRICAL CHARACTERISTICS
UNIT
Amps
UNIT
Volts
MIN
TYP
MAX
2.2
2.7
1.6
APT15GP60BDF1
15
36
110
MAXIMUM RATINGS
All Ratings: T
C
= 25C unless otherwise specified.
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MIN
TYP
MAX
56
58
106
106
2.3
6
77
235
5
5
UNIT
ns
Amps
nC
Volts
Characteristic
Reverse Recovery Time
T
J
= 25C
I
F
= 15A, di
F
/dt
= -200A/s, V
R
= 400V
T
J
= 100C
Forward Recovery Time
T
J
= 25C
I
F
= 15A, di
F
/dt
= 200A/s, V
R
= 400V
T
J
= 100C
Maximum Reverse Recovery Current
T
J
= 25C
I
F
= 15A, di
F
/dt
= -200A/s, V
R
= 400V
T
J
= 100C
Reverse Recovery Charge
T
J
= 25C
I
F
= 15A, di
F
/dt
= -200A/s, V
R
= 400V
T
J
= 100C
Forward Recovery Voltage
T
J
= 25C
I
F
= 15A, di
F
/dt
= 200A/s, V
R
= 400V
T
J
= 100C
DYNAMIC CHARACTERISTICS
Symbol
t
rr1
t
rr2
t
fr1
t
fr2
I
RRM1
I
RRM2
Q
rr1
Q
rr2
V
fr1
V
fr2
Z
JC
, THERMAL IMPEDANCE (C/W)
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 25. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x Z
JC + TC
t1
t2
P
DM
0.5
SINGLE PULSE
0.1
0.3
0.7
0.9
0.05
050-7428 Rev B 4-2003
APT15GP60BDF1
TJ = 100C
VR = 350V
t
rr
Q
rr
Q
rr
t
rr
I
RRM
V
fr
30A
15A
7.5A
15A
7.5A
30A
T
J
= 25C
T
J
= 100C
T
J
= 150C
7.5A
15A
30A
t
fr
T
J
= 175C
TJ = 100C
VR = 400V
TJ = 100C
VR = 400V
TJ = 100C
VR = 400V
IF = 15A
120
100
80
60
40
20
0
100
80
60
40
20
0
16
14
12
10
8
6
4
2
0
100
80
60
40
20
0
250
200
150
100
50
0
500
450
400
350
300
250
200
150
100
50
0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
30
25
20
15
10
5
0
30
25
20
15
10
5
0
C
J
, JUNCTION CAPACITANCE
t
rr
, REVERSE RECOVERY TIME
I
RRM
, REVERSE RECOVERY CURRENT
I
F
, FORWARD CURRENT
(pF)
(ns)
(
A
)
(
A
)
I
F(AV)
(A)
t
fr
, FORWARD RECOVERY TIME
K
f
, DYNAMIC PARAMETERS
Q
rr
, REVERSE RECOVERY CHARGE
(ns)
(NORMALIZED)
(nC)
V
fr
, FORWARD RECOVERY VOLTAGE
(V)
0
1
2
3
4
5
0
200
400
600
800
1000
0
200
400
600
800
1000
0
25
50
75
100
125
150
0
200
400
600
800
1000
0
200
400
600
800
1000
.3
1
10
100 200
25
50
75
100
125
150
V
F
, ANODE-TO-CATHODE VOLTAGE (V)
di
F
/dt, CURRENT RATE OF DECREASE(A/s)
Figure 26, Forward Voltage vs. Forward Current
Figure 27, Reverse Recovery Charge vs. Current Rate of Decrease
di
F
/dt, CURRENT RATE OF DECREASE (A/s)
T
J
, JUNCTION TEMPERATURE (C)
Figure 28, Reverse Recovery Current vs. Current Rate of Decrease
Figure 29, Dynamic Parameters vs. Junction Temperature
di
F
/dt, CURRENT RATE OF DECREASEs (A/s)
di
F
/dt, CURRENT RATE OF DECREASE (A/s)
Figure 30, Reverse Recovery Time vs. Current Rate of Decrease
Figure 31, Forward Recovery Voltage/Time vs. Current Rate of Decrease
V
R
, REVERSE VOLTAGE (V)
Case Temperature (C)
Figure 32, Junction Capacitance vs. Reverse Voltage
Figure 33, Maximum Average Forward Current vs.
CaseTemperature
050-7428 Rev B 4-2003
APT15GP60BDF1
T0-247 Package Outline
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
3.55 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Dimensions in Millimeters and (Inches)
2-Plcs.
Collector
(Cathode)
Emitter
(Anode)
Gate
Collector (Cathode)
PEARSON 2878
CURRENT
TRANSFORMER
di
F
/dt Adjust
30
H
D.U.T.
+15v
-15v
0v
Vr
4
3
1
2
5
5
trr/Qrr
Waveform
Zero
6
1
2
3
4
6
di
F
/dt - Current Rate of Decrease, Rate of Diode
Current Change Through Zero Crossing
From Positive to Negative.
I
F
- Forward Conduction Current
I
RRM
- Maximum Reverse Recovery Current.
trr -
Reverse
R
ecovery Time, measured from zero crossing where
diode
Qrr - Area Under the Curve Defined by I
RRM
and trr.
di
M
/dt - Maximum Rate of Current Increase During the Trailing Portion of trr.
current goes from positive to negative, to the point at which the straight
line through I
RRM
and 0.25 I
RRM
passes through zero.
Figure 10. Diode Reverse Recovery Test Circuit and Waveforms
Figure 34, Diode Reverse Recovery Waveform and Definitions
0.25 IRRM
Slope = di
M
/dt
TRANSIENT THERMAL IMPEDANCE MODEL
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
0.698
0.438
0.165
0.00173F
0.0395F
0.670F
Power
(Watts)
Junction
temp. ( "C)
RC MODEL
Case temperature
PDF 
ZIP