TO-247
MAXIMUM RATINGS
All Ratings: T
C
= 25C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Ohms
A
nA
Volts
MIN
TYP
MAX
800
0.39
0.45
0.5
20
200
100
2.1
3
3.9
G
D
S
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
Super Junction MOSFET
C
Power Semiconductors
O
O L
MOS
Ultra low R
DS
(
ON
)
Low Miller Capacitance
Ultra Low Gate Charge, Q
g
Avalanche Energy Rated
TO-247 Package
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250A)
Drain-Source On-State Resistance
2
(V
GS
= 10V, I
D
= 7.1A)
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V, T
J
= 150C)
Gate-Source Leakage Current (V
GS
= 20V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 680A)
"COOLMOS
TM
comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trade-
mark of Infineon Technologies AG"
050-7136 Rev B 4-2004
APT11N80BC3
800V 11A 0.45
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
,T
STG
T
L
dv
/
dt
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25C
Pulsed Drain Current
1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
C
= 25C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Drain-Source Voltage slope (V
DS
= 640V, I
D
= 11A, T
J
= 125C)
Repetitive Avalanche Current
7
Repetitive Avalanche Energy
7
Single Pulse Avalanche Energy
4
UNIT
Volts
Amps
Volts
Watts
W/C
C
V/ns
Amps
mJ
APT11N80BC3
800
11
33
20
30
156
1.25
-55 to 150
260
50
11
0.2
470
DYNAMIC CHARACTERISTICS
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZJC + TC
t1
t2
P
DM
SINGLE PULSE
Z
JC
, THERMAL IMPEDANCE (C/W)
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.90
0.80
0.70
0.60
0.50
0.40
0.30
0.20
0.10
0
0.5
0.1
0.3
0.7
0.9
0.05
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
1
(Body Diode)
Diode Forward Voltage
2
(V
GS
= 0V, I
S
= -
11A
)
Reverse Recovery Time (I
S
=
11A
, dl
S
/dt = -100A/s, V
R
= 640V)
Reverse Recovery Charge (I
S
=
11A
, dl
S
/dt = -100A/s, V
R
= 640V)
Peak Diode Recovery
dv
/
dt
5
UNIT
Amps
Volts
ns
C
V/ns
MIN
TYP
MAX
11
33
1
1.2
550
10
6
Symbol
R
JC
R
JA
MIN
TYP
MAX
0.80
62
UNIT
C/W
Characteristic
Junction to Case
Junction to Ambient
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
dv
/
dt
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
on
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
6
Turn-off Switching Energy
Turn-on Switching Energy
6
Turn-off Switching Energy
Test Conditions
V
GS
= 0V
V
DS
= 25V
f
= 1 MHz
V
GS
= 10V
V
DD
= 400V
I
D
= 11A
@ 25C
RESISTIVE SWITCHING
V
GS
=
10V
V
DD
=
400V
I
D
=
11A
@ 25C
R
G
=
7.5
INDUCTIVE SWITCHING @ 25C
V
DD
=
533V, V
GS
= 15V
I
D
=
11A, R
G
=
5
INDUCTIVE SWITCHING @ 125C
V
DD
=
533V V
GS
= 15V
I
D
=
11A, R
G
=
5
MIN
TYP
MAX
1585
770
18
60
8
30
25
15
70
80
7
10
165
50
305
65
UNIT
pF
nC
ns
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
1 Repetitve avalanche causes additional power losses that
can be calculated as P
AV
=E
AR
*f
2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting T
j
=
+25C, L = 194mH, R
G
=
25
, Peak I
L
= 2.2A
5
dv
/
dt
numbers reflect the limitations of the test circuit rather than the
device itself.
I
S
-
I
D
11A
di
/
dt
700A/s
V
R
V
DSS
T
J
150
C
6 Eon includes diode reverse recovery. See figures 18, 20.
7 Repetitve avalanche causes additional power losses that can be
calculated as P
AV
=E
AR
*f
APT Reserves the right to change, without notice, the specifications and information contained herein.
APT11N80BC3
050-7136 Rev B 4-2004
050-7136 Rev B 4-2004
APT11N80BC3
Typical Performance Curves
4.5V
5V
5.5V
4V
VGS =15 & 10V
VGS=10V
VGS=20V
TJ = +125C
TJ = +25C
TJ = -55C
VDS> ID (ON) x RDS (ON)MAX.
250SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
6V
6.5V
NORMALIZED TO
V
GS
= 10V @ 5.5A
45
40
35
30
25
20
15
10
5
0
12
10
8
6
4
2
0
3.0
2.5
2.0
1.5
1.0
0.5
0
30
25
20
15
10
5
0
1.40
1.30
1.20
1.10
1.00
0.90
0.80
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
1.2
1.1
1.0
0.9
0.8
0.7
0.6
I
D = 5.5A
V
GS = 10V
0.345
0.455
0.00375
0.101
Power
(watts)
RC MODEL
Junction
temp. (
C)
Case temperature
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 4, TRANSFER CHARACTERISTICS
FIGURE 5, R
DS(ON)
vs DRAIN CURRENT
T
C
, CASE TEMPERATURE (C)
T
J
, JUNCTION TEMPERATURE (C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
T
J
, JUNCTION TEMPERATURE (C)
T
C
, CASE TEMPERATURE (C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
0
5
10
15
20
0
1
2
3
4
5
6
7
8
9
10
0
4
8
12
16
20
25
50
75
100
125
150
-50 -25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75 100 125 150
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
I
D
, DRAIN CURRENT (AMPERES)
I
D
, DRAIN CURRENT (AMPERES)
(NORMALIZED)
V
GS
(TH), THRESHOLD VOLTAGE
BV
DSS
, DRAIN-TO-SOURCE BREAKDOWN
R
DS
(ON)
, DRAIN-TO-SOURCE ON RESISTANCE
I
D
, DRAIN CURRENT (AMPERES)
(NORMALIZED)
VOLTAGE (NORMALIZED)
APT11N80BC3
050-7136 Rev B 4-2004
Typical Performance Curves
Crss
Ciss
Coss
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Q
g
, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPERES)
I
DR
, REVERSE DRAIN CURRENT (AMPERES)
C
,
CAPACITANCE (pF)
1
10
100
800
0
10
20
30
40
50
0
20
40
60
80
100
0.3
0.5
0.7
0.9
1.1
1.3
1.5
33
10
5
1
.1
16
12
8
4
0
TC =+25C
TJ =+150C
SINGLE PULSE
10mS
1mS
100S
TJ =+150C
TJ =+25C
I
D
(A)
I
D
(A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
I
D
(A)
R
G
, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
V
DD = 533V
R
G = 5
T
J = 125C
L = 100H
E
on
E
off
t
r
t
f
SWITCHING ENERGY (
J)
t
d(on)
and t
d(off)
(ns)
SWITCHING ENERGY (
J)
t
r
and t
f
(ns)
5
8
11
14
17
20
5
8
11
14
17
20
5
8
11
14
17
20
0
5
10 15 20 25 30 35 40 45 50
V
DD = 533V
I
D = 11A
T
J = 125C
L = 100H
E
ON
includes
diode reverse recovery.
VDS= 400V
VDS= 160V
VDS= 640V
I
D = 11A
t
d(on)
t
d(off)
E
on
E
off
70
60
50
40
30
20
10
0
500
400
300
200
100
0
V
DD = 533V
R
G = 5
T
J = 125C
L = 100H
V
DD = 533V
R
G = 5
T
J = 125C
L = 100H
E
ON
includes
diode reverse recovery.
10,000
1,000
100
10
1
100
10
1
OPERATION HERE
LIMITED BY RDS (ON)
40
30
20
10
0
500
400
300
200
100
0
050-7136 Rev B 4-2004
APT11N80BC3
Typical Performance Curves
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Drain
Drain
Source
Gate
5.45 (.215) BSC
Dimensions in Millimeters and (Inches)
2-Plcs.
TO-247 Package Outline
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
I
C
D.U.T.
APT15DF60B
V
CE
Figure 20, Inductive Switching Test Circuit
V
DD
G
10%
5% 10%
t
d(on)
t
r
90%
Collector Current
Collector Voltage
Gate Voltage
T
J
= 125 C
5 %
Switching Energy
T
J
= 125 C
90%
t
d(off)
0
t
f
90%
10%
Gate Voltage
Collector Current
Collector Voltage
Switching Energy
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