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Электронный компонент: APT10M11JVRU2

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APT10M11JVRU2
A
P
T
10M
11J
V
R
U
2
R
e
v 0 O
c
t
obe
r
,
2004
APT website http://www.advancedpower.com
1 7




ISOTOP
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
G
S
D
K

Symbol Parameter
Max
ratings
Unit
V
DSS
Drain - Source Breakdown Voltage
100
V
T
c
= 25C
142
I
D
Continuous
Drain
Current
T
c
= 80C
106
I
DM
Pulsed Drain current
576
A
V
GS
Gate - Source Voltage
30
V
R
DSon
Drain - Source ON Resistance
11
m
P
D
Maximum Power Dissipation
T
c
= 25C
450
W
I
AR
Avalanche current (repetitive and non repetitive)
144
A
E
AR
Repetitive Avalanche Energy
50
E
AS
Single Pulse Avalanche Energy
2500
mJ
IF
A V
Maximum Average Forward Current
Duty cycle=0.5
Tc = 90C
30
IF
RMS
RMS Forward Current (Square wave, 50% duty)
47
A
V
DSS
= 100V
R
DSon
= 11m
max @ Tj = 25C
I
D
= 142A @ Tc = 25C
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Brake switch
Features
Power MOS V
MOSFETs
-
Low R
DSon
-
Low input and Miller capacitance
-
Low gate charge
-
Fast intrinsic diode
-
Avalanche energy rated
-
Very rugged
ISOTOP
Package (SOT-227)
Very low stray inductance
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Very rugged
Low profile
ISOTOP
Boost chopper
MOSFET Power Module
K
D
G
S
APT10M11JVRU2
A
P
T
10M
11J
V
R
U
2
R
e
v 0 O
c
t
obe
r
,
2004
APT website http://www.advancedpower.com
2 7
All ratings @ T
j
= 25C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
BV
DSS
Drain - Source Breakdown Voltage V
GS
= 0V, I
D
= 250A
100
V
V
GS
= 0V,V
DS
= 100V
T
j
= 25C
250
I
DSS
Zero Gate Voltage Drain Current
V
GS
= 0V,V
DS
= 80V
T
j
= 125C
1000
A
R
DS(on)
Drain Source on Resistance
V
GS
= 10V, I
D
= 71A
11
m
V
GS(th)
Gate
Threshold
Voltage
V
GS
= V
DS
, I
D
=
2.5mA
2 4 V
I
GSS
Gate Source Leakage Current
V
GS
= 20
V, V
DS
= 0V
100
nA
Dynamic Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
C
iss
Input
Capacitance
8600
C
oss
Output
Capacitance
3200
C
rss
Reverse Transfer Capacitance
V
GS
= 0V
V
DS
= 25V
f = 1MHz
1180
pF
Q
g
Total gate Charge
300
Q
gs
Gate Source Charge
95
Q
gd
Gate Drain Charge
V
GS
= 10V
V
Bus
= 50V
I
D
= 50A @ T
J
=25C
110
nC
T
d(on)
Turn-on
Delay
Time
16
T
r
Rise Time
48
T
d(off)
Turn-off Delay Time
51
T
f
Fall Time
V
GS
= 15V
V
Bus
= 50V
I
D
= 142A @ T
J
=25C
R
G
= 0.6
9
ns
Diode ratings and characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
I
F
= 30A
1.1
1.15
I
F
= 60A
1.4
V
F
Diode Forward Voltage
I
F
= 30A
T
j
= 125C
0.9
V
V
R
= 200V
T
j
= 25C
250
I
RM
Maximum Reverse Leakage Current
V
R
= 200V
T
j
= 125C
500
A
C
T
Junction
Capacitance
V
R
=
200V
94 pF
Reverse Recovery Time
I
F
=1A,V
R
=30V
di/dt =200A/s
T
j
= 25C
21
T
j
= 25C
24
t
rr
Reverse Recovery Time
T
j
= 125C
48
ns
T
j
= 25C
3
I
RRM
Maximum Reverse Recovery Current
T
j
= 125C
6
A
T
j
= 25C
33
Q
rr
Reverse Recovery Charge
I
F
= 30A
V
R
= 133V
di/dt =200A/s
T
j
= 125C
150
nC
t
rr
Reverse Recovery Time
31
ns
Q
rr
Reverse Recovery Charge
335
nC
I
RRM
Maximum Reverse Recovery Current
I
F
= 30A
V
R
= 133V
di/dt =1000A/s
T
j
= 125C
19 A
APT10M11JVRU2
A
P
T
10M
11J
V
R
U
2
R
e
v 0 O
c
t
obe
r
,
2004
APT website http://www.advancedpower.com
3 7

Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
MOSFET 0.28
R
thJC
Junction
to
Case
Diode
1.21
R
thJA
Junction to Ambient (IGBT & Diode)
20
C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500 V
T
J
,T
STG
Storage Temperature Range
-55
150
T
L
Max Lead Temp for Soldering:0.063" from case for 10 sec
300
C
Torque Mounting
torque
(Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
1.5
N.m
Wt Package
Weight
29.2 g



Typical
MOSFET
Performance Curve
APT10M11JVRU2
A
P
T
10M
11J
V
R
U
2
R
e
v 0 O
c
t
obe
r
,
2004
APT website http://www.advancedpower.com
4 7
APT10M11JVRU2
A
P
T
10M
11J
V
R
U
2
R
e
v 0 O
c
t
obe
r
,
2004
APT website http://www.advancedpower.com
5 7
Typical Diode Performance Curve
APT10M11JVRU2
A
P
T
10M
11J
V
R
U
2
R
e
v 0 O
c
t
obe
r
,
2004
APT website http://www.advancedpower.com
6 7
APT10M11JVRU2
A
P
T
10M
11J
V
R
U
2
R
e
v 0 O
c
t
obe
r
,
2004
APT website http://www.advancedpower.com
7 7
SOT-227 (ISOTOP
) Package Outline
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
Emitter terminals are shorted
internally. Current handling
capability is equal for either
Emitter terminal.
ISOTOP
is a Registered Trademark of SGS Thomson

APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
Source
Gate
Drain
Cathode