MAXIMUM RATINGS
All Ratings: T
C
= 25C unless otherwise specified.
UNIT
Volts
Amps
Volts
Watts
W/C
C
Amps
mJ
UNIT
Volts
Amps
Ohms
A
nA
Volts
MIN
TYP
MAX
100
225
0.007
250
1000
100
2
4
APT10M07JVFR
100
225
900
30
40
700
5.6
-55 to 150
300
225
50
3600
APT10M07JVFR
100V 225A 0.007
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250A)
On State Drain Current
2
(V
DS
> I
D(on)
x R
DS(on)
Max, V
GS
= 10V)
Drain-Source On-State Resistance
2
(V
GS
= 10V, 0.5 I
D[Cont.]
)
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125C)
Gate-Source Leakage Current (V
GS
= 30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 5.0mA)
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
,T
STG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25C
Pulsed Drain Current
1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
C
= 25C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
1
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
Single Pulse Avalanche Energy
4
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
I
D(on)
R
DS(on)
I
DSS
I
GSS
V
GS(th)
G
D
S
SOT-227
G
S
S
D
ISOTOP
"UL Recognized"
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
Power MOS V
is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
also achieves faster switching speeds through optimized gate layout.
Fast Recovery Body Diode
100% Avalanche Tested
Lower Leakage
Popular SOT-227 Package
Faster Switching
FREDFET
POWER MOS V
050-5846 Rev A 9-2004
DYNAMIC CHARACTERISTICS
APT10M07JVFR
050-5846 Rev A 9-2004
Z
JC
, THERMAL IMPEDANCE (C/W)
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.2
0.1
0.05
0.01
0.005
0.001
0.0005
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZJC + TC
t1
t2
P
DM
0.1
SINGLE PULSE
0.02
0.05
0.2
D=0.5
0.01
1
Repetitive Rating: Pulse width limited by maximum junction
3
See MIL-STD-750 Method 3471
temperature.
4
Starting T
j
=
+25C, L = 142H, R
G
=
25
, Peak I
L
= 225A
2
Pulse Test: Pulse width < 380 S, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
1
(Body Diode)
Diode Forward Voltage
2
(V
GS
= 0V, I
S
= -I
D
[Cont.])
Peak Diode Recovery
dv
/
dt
5
Reverse Recovery Time
(I
S
= -I
D
[Cont.],
di
/
dt
= 100A/s)
Reverse Recovery Charge
(I
S
= -I
D
[Cont.],
di
/
dt
= 100A/s)
Peak Recovery Current
(I
S
= -I
D
[Cont.],
di
/
dt
= 100A/s)
Symbol
I
S
I
SM
V
SD
dv
/
dt
t
rr
Q
rr
I
RRM
UNIT
Amps
Volts
V/ns
ns
C
Amps
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d
(on)
t
r
t
d
(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25C
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25C
R
G
= 0.6
MIN
TYP
MAX
18000 21600
6800
9500
2800
4200
700
1050
130
195
300
435
25
50
60
120
80
120
20
40
UNIT
pF
nC
ns
MIN
TYP
MAX
225
900
1.3
8
T
j
= 25C
150
250
T
j
= 125C
250
500
T
j
= 25C
0.9
T
j
= 125C
2.5
T
j
= 25C
12
T
j
= 125C
20
THERMAL / PACKAGE CHARACTERISTICS
Symbol
R
JC
R
JA
V
Isolation
Torque
MIN
TYP
MAX
0.18
40
2500
13
UNIT
C/W
Volts
lbin
Characteristic
Junction to Case
Junction to Ambient
RMS Voltage
(50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
Maximum Torque for Device Mounting Screws and Electrical Terminations.
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
T
C
, CASE TEMPERATURE (C)
T
J
, JUNCTION TEMPERATURE (C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
T
J
, JUNCTION TEMPERATURE (C)
T
C
, CASE TEMPERATURE (C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
I
D
, DRAIN CURRENT (AMPERES)
I
D
, DRAIN CURRENT (AMPERES)
I
D
, DRAIN CURRENT (AMPERES)
(NORMALIZED)
V
GS
(TH), THRESHOLD VOLTAGE
B
V
DSS
, DRAIN-TO-SOURCE BREAKDOWN
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
I
D
, DRAIN CURRENT (AMPERES)
(NORMALIZED)
VOLTAGE (NORMALIZED)
0
10
20
30
40
50
0
0.5
1.0
1.5
2.0
2.5
0
2
4
6
8
0
100
200
300
400
25
50
75
100
125
150
-50 -25
0
25
50
75
100 125 150
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
APT10M07JVFR
I
D = 0.5 ID [Cont.]
V
GS = 10V
360
300
240
180
120
60
0
1.10
1.05
1.00
0.95
0.90
0.85
0.80
1.15
1.10
1.05
1.00
0.95
0.90
1.2
1.1
1.0
0.9
0.8
0.7
0.6
360
300
240
180
120
60
0
360
300
240
180
120
60
0
250
200
150
100
50
0
2.00
1.75
1.50
1.25
1.00
0.75
0.50
VDS> ID (ON) x RDS (ON)MAX.
250SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
VGS=10V
VGS=20V
VGS=7V, 8V, 9V, 10V & 15V
6V
7V
5.5V
4.5V
5V
8V
6V
5.5V
4.5V
5V
6.5V
VGS=15V
6.5V
10V
9V
TJ = +25C
TJ = -55C
TJ = +125C
TJ = +125C
TJ = +25C
TJ = -55C
NORMALIZED TO
V
GS
= 10V @ 0.5 I
D [Cont.]
050-5846 Rev A 9-2004
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Q
g
, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPERES)
I
DR
, REVERSE DRAIN CURRENT (AMPERES)
C, CAPACITANCE (pF)
APT10M07JVFR
TC =+25C
TJ =+150C
SINGLE PULSE
OPERATION HERE
LIMITED BY RDS (ON)
1
5
10
50
100
.01
.1
1
10
50
0
200
400 600
800 1000 1200 1400
0
0.4
0.8
1.2
1.6
2.0
50,000
10,000
5,000
1,000
500
100
50
10
5
1
VDS=50V
VDS=20V
VDS=80V
I
D = 100A
10S
10mS
100mS
DC
1mS
TJ =+150C
TJ =+25C
SOT-227 (ISOTOP
) Package Outline
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
* Source
Drain
Gate
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
* Source
Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
ISOTOP
is a Registered Trademark of SGS Thomson.
"UL Recognized" File No. E145592
Crss
Coss
Ciss
1,000
500
100
50
10
5
1
20
16
12
8
4
0
100S
050-5846 Rev A 9-2004
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
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