ADVANCE TECHNICAL
INFORMATION
MIN
TYP
MAX
600
4.5
5.5
6.5
2.2
2.7
2.8
3.4
1.0
5.0
100
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 1.0mA)
Gate Threshold Voltage (V
CE
= V
GE
, I
C
= 700A, T
j
= 25C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 50A, T
j
= 25C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 50A, T
j
= 125C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 25C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 125C)
Gate-Emitter Leakage Current (V
GE
= 20V, V
CE
= 0V)
Symbol
BV
CES
V
GE
(TH)
V
CE
(ON)
I
CES
I
GES
MAXIMUM RATINGS
All Ratings: T
C
= 25C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS
UNIT
Volts
mA
nA
Symbol
V
CES
V
CGR
V
GE
I
C1
I
C2
I
CM
I
LM
E
AS
P
D
T
J
,T
STG
T
L
Parameter
Collector-Emitter Voltage
Collector-Gate Voltage (R
GE
= 20K
W
)
Gate-Emitter Voltage
Continuous Collector Current
4
@ T
C
= 25C
Continuous Collector Current @ T
C
= 60C
Pulsed Collector Current
1
@ T
C
= 25C
RBSOA Clamped Inductive Load Current @ R
g
= 11
W
T
C
= 125C
Single Pulse Avalanche Energy
2
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
APT100GF60JR
600
600
20
100
100
280
200
85
500
-55 to 150
300
UNIT
Volts
Amps
mJ
Watts
C
052-6261 Rev - 5-2001
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
Fast IGBT
G
C
E
The Fast IGBT is a new generation of high voltage power IGBTs. Using
Non-Punch Through Technology the Fast IGBT offers superior ruggedness,
fast switching speed and low Collector-Emitter On voltage.
Low Forward Voltage Drop
High Freq. Switching to 20KHz
Low Tail Current
Ultra Low Leakage Current
Avalanche Rated
RBSOA and SCSOA Rated
USA
405 S.W. Columbia Street
Bend, Oregon 97702 -1035
Phone: (541) 382-8028
FAX: (541) 388-0364
EUROPE
Chemin de Magret
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
SOT-227
G
E
E
C
ISOTOP
"UL Recognized"
APT100GF60JR
600V
100A
ADVANCE TECHNICAL
INFORMATION
052-6261 Rev - 5-2001
APT100GF60JR
DYNAMIC CHARACTERISTICS
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Total Switching Losses
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Switching Losses
Forward Transconductance
Test Conditions
Capacitance
V
GE
= 0V
V
CE
= 25V
f = 1 MHz
Gate Charge
V
GE
= 15V
V
CC
= 0.5V
CES
I
C
= I
C2
Resistive Switching (25C)
V
GE
= 15V
V
CC
= 0.66V
CES
I
C
= I
C2
R
G
= 10
W
Inductive Switching (150C)
V
CLAMP
(Peak)
= 0.66V
CES
V
GE
= 15V
I
C
= I
C2
R
G
= 10
W
T
J
= +150C
Inductive Switching (25C)
V
CLAMP
(Peak)
= 0.66V
CES
V
GE
= 15V
I
C
= I
C2
R
G
= 10
W
T
J
= +25C
V
CE
= 20V, I
C
= I
C2
MIN
TYP
MAX
4400
480
300
335
40
195
50
200
190
270
50
170
400
95
6.3
5.2
11.5
55
180
365
90
10.5
6
UNIT
pF
nC
ns
ns
mJ
ns
mJ
S
UNIT
C/W
oz
gm
lbin
Nm
MIN
TYP
MAX
0.32
40
1.03
29.2
10
1.5
Characteristic
Junction to Case
Junction to Ambient
Package Weight
Mounting Torque (
using a 6-32 or 3mm Binding Head Machine Screw
)
Symbol
R
Q
JC
R
Q
JA
W
T
Torque
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d
(on)
t
r
t
d
(off)
t
f
t
d
(on)
t
r
t
d
(off)
t
f
E
on
E
off
E
ts
t
d
(on)
t
r
t
d
(off)
t
f
E
ts
gfe
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
2
I
C
= I
C2
,
R
GE
= 25
W
,
L = 17H, T
j
= 25C
3
See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
APT100GF60JR
052-6261 Rev - 5-2001
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
* Emitter
Collector
Gate
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
* Emitter
Emitter terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
APT's devices are covered by one or more of the following U.S.patents:
4,895,810
5,045,903
5,089,434
5,182,234
5,019,522
5,262,336
5,256,583
4,748,103
5,283,202
5,231,474
5,434,095
5,528,058
ADVANCE TECHNICAL
INFORMATION
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