Symbol
V
DSS
I
D
I
DM
, l
LM
V
GS
P
D
T
J
,T
STG
T
L
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25
C
Pulsed Drain Current
1
and Inductive Current Clamped
Gate-Source Voltage
Total Power Dissipation @ T
C
= 25
C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions / Part Number
Drain-Source Breakdown Voltage
(V
GS
= 0V, I
D
= 250
A)
On State Drain Current
2
(V
DS
> I
D
(ON) x R
DS
(ON) Max, V
GS
= 10V)
Drain-Source On-State Resistance
2
(V
GS
= 10V, 0.5 I
D
[Cont.])
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125
C)
Gate-Source Leakage Current (V
GS
=
30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 2.5mA)
THERMAL CHARACTERISTICS
Symbol
R
JC
R
CS
Characteristic
Junction to Case
Case to Sink
(Use High Efficiency Thermal Joint Compound and Planer Heat Sink Surface.)
MIN
TYP
MAX
0.24
0.06
UNIT
C/W
Symbol
BV
DSS
I
D
(ON)
R
DS
(ON)
I
DSS
I
GSS
V
GS
(TH)
MIN
TYP
MAX
APT10050JN
1000
APT10050JN
20.5
APT10050JN
0.50
250
1000
100
2
4
UNIT
Volts
Amps
Ohms
A
nA
Volts
UNIT
Volts
Amps
Volts
Watts
W/
C
C
APT
10050JN
1000
20.5
82
30
520
4.16
-55 to 150
300
MAXIMUM RATINGS
All Ratings: T
C
= 25
C unless otherwise specified.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
SOT-227
G
S
S
D
ISOTOP
"UL Recognized" File No. E145592 (S)
APT10050JN 1000V 20.5A 0.50
SINGLE DIE ISOTOP
PACKAGE
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
POWER MOS IV
050-0037 Rev F
USA
405 S.W. Columbia Street
Bend, Oregon 97702 -1035
Phone: (541) 382-8028
FAX: (541) 388-0364
EUROPE
Avenue J.F. Kennedy Bt B4 Parc Cadra Nord
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
G
D
S
MIN
TYP
MAX
APT10050JN
20.5
APT10050JN
82
1.8
1280
2000
16
32
DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d
(on)
t
r
t
d
(off)
t
f
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25
C
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25
C
R
G
= 0.6
MIN
TYP
MAX
5425
6500
710
995
230
350
235
370
24
36
107
160
15
30
15
30
47
75
15
30
UNIT
pF
nC
ns
APT10050JN
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Characteristic / Test Conditions
Continuous Source Current
(Body Diode)
Pulsed Source Current
1
(Body Diode)
Diode Forward Voltage
2
(V
GS
= 0V, I
S
= -I
D
[Cont.])
Reverse Recovery Time (I
S
= -I
D
[Cont.], dl
S
/dt = 100A/
s)
Reverse Recovery Charge (I
S
= -I
D
[Cont.], dl
S
/dt = 100A/
s)
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
UNIT
Amps
Volts
ns
C
Characteristic / Test Conditions
Internal Drain Inductance
(Measured From Drain Terminal to Center of Die.)
Internal Source Inductance
(Measured From Source Terminals to Source Bond Pads)
RMS Voltage
(50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
Drain-to-Mounting Base Capacitance
(f = 1MHz)
Maximum Torque for Device Mounting Screws and Electrical Terminations.
UNIT
nH
Volts
pF
in-lbs
PACKAGE CHARACTERISTICS
Symbol
L
D
L
S
V
Isolation
C
Isolation
Torque
MIN
TYP
MAX
3
5
2500
35
13
1
Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
2
Pulse Test: Pulse width < 380
S, Duty Cycle < 2%
3
See MIL-STD-750 Method 3471
050-0037 Rev F
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.3
0.1
0.05
0.01
0.005
0.001
Z
JC
, THERMAL IMPEDANCE (
C/W)
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x Z
JC + TC
t1
t2
P
DM
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D=0.5
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
T
C
, CASE TEMPERATURE (
C)
T
J
, JUNCTION TEMPERATURE (
C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
T
J
, JUNCTION TEMPERATURE (
C)
T
C
, CASE TEMPERATURE (
C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
I
D
, DRAIN CURRENT (AMPERES)
I
D
, DRAIN CURRENT (AMPERES)
I
D
, DRAIN CURRENT (AMPERES)
(NORMALIZED)
V
GS
(TH), THRESHOLD VOLTAGE
BV
DSS
(ON), DRAIN-TO-SOURCE BREAKDOWN
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
I
D
, DRAIN CURRENT (AMPERES)
(NORMALIZED)
VOLTAGE (NORMALIZED)
0
100
200
300
400
500
0
5
10
15
20
25
0
2
4
6
8
10
0
20
40
60
80
100
25
50
75
100
125
150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
APT10050JN
I
D
= 0.5 I
D
[Cont.]
V
GS
= 10V
50
40
30
20
10
0
50
40
30
20
10
0
25
20
15
10
5
0
2.5
2.0
1.5
1.0
0.5
0.0
50
40
30
20
10
0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
0.9
0.8
0.7
1.4
1.2
1.0
0.8
0.6
0.4
TJ = 25
C
250
SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
NORMALIZED TO
V
GS
= 10V @ 0.5 I
D
[Cont.]
VGS=20V
VGS=10V
TJ = -55
C
TJ = +25
C
TJ = +125
C
TJ = +125
C
TJ = +25
C
TJ = -55
C
VDS> ID (ON) x RDS (ON)MAX.
250
SEC. PULSE TEST
@ < 0.5 % DUTY CYCLE
4V
5V
VGS=7, 8, 9, 10V
6V
5V
4V
VGS=6, 7, 8, 9, 10V
050-0037 Rev F
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Q
g
, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPERES)
I
DR
, REVERSE DRAIN CURRENT (AMPERES)
C, CAPACITANCE (pF)
APT10050JN
TC =+25
C
TJ =+150
C
SINGLE PULSE
100
50
10
5
1
.5
.1
20
16
12
8
4
0
20,000
10,000
5,000
1,000
500
100
200
160
120
80
40
0
I
D
= I
D
[Cont.]
Ciss
OPERATION HERE
LIMITED BY RDS (ON)
Crss
Coss
10
S
100
S
1mS
10mS
100mS
DC
VDS=100V
VDS=200V
VDS=500V
TJ =+150
C
TJ =+25
C
1
5
10
50 100
500 1000
.1
.5
1
5
10
50
0
100
200
300
400
500
0
0.4
0.8
1.2
1.6
2.0
TJ =-55
C
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
* Source
Drain
Gate
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
* Source
Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
SOT-227 (ISOTOP
) Package Outline
ISOTOP
is a Registered Trademark of SGS Thomson.
APT Reserves the right to change, without notice, the specifications and information contained herein.
050-0037 Rev F
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