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Электронный компонент: APL501J

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STATIC ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
All Ratings: T
C
= 25C unless otherwise specified.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
SOT-227
G
S
S
D
"UL Recognized" File No. E145592 (S)
APL501J
500V
43.0A 0.12
W
SINGLE DIE ISOTOP
PACKAGE
ISOTOP
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
POWER MOS IV
G
D
S
050-5903 Rev C 9-2001
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25C
Pulsed Drain Current
1
and Inductive Current Clamped
Gate-Source Voltage
Total Power Dissipation @ T
C
= 25C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
APL501J
500
43
172
30
520
4.16
-55 to 150
300
Characteristic / Test Conditions / Part Number
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250 A)
On State Drain Current
2
(V
DS
> I
D
(ON) x R
DS
(ON) Max, V
GS
= 8V)
Drain-Source On-State Resistance
2
(V
GS
= 10V, 0.5 I
D
[Cont.])
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125C)
Gate-Source Leakage Current (V
GS
= 30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 2.5mA)
MIN
TYP
MAX
500
43
0.12
25
250
100
2
4
UNIT
Volts
Amps
Volts
Watts
W/C
C
UNIT
Volts
Amps
Ohms
A
nA
Volts
Symbol
V
DSS
I
D
I
DM
, l
LM
V
GS
P
D
T
J
,T
STG
T
L
Symbol
BV
DSS
I
D
(ON)
R
DS
(ON)
I
DSS
I
GSS
V
GS
(TH)
USA
405 S.W. Columbia Street
Bend, Oregon 97702 -1035
Phone: (541) 382-8028
FAX: (541) 388-0364
EUROPE
Chemin de Magret
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
APT Website - http://www.advancedpower.com
THERMAL CHARACTERISTICS
Symbol
R
Q
JC
R
Q
CS
Characteristic
Junction to Case
Case to Sink
(Use High Efficiency Thermal Joint Compound and Planer Heat Sink Surface.)
MIN
TYP
MAX
0.24
0.06
UNIT
C/W
DYNAMIC CHARACTERISTICS
APL501J
1
Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
2
Pulse Test: Pulse width < 380 S, Duty Cycle < 2%
3
See MIL-STD-750 Method 3471
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.3
0.1
0.05
0.01
0.005
0.001
Z
q
JC
, THERMAL IMPEDANCE (C/W)
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x Z
JC + TC
t1
t2
P
DM
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D=0.5
SAFE OPERATING AREA CHARACTERISTICS
Test Conditions / Part Number
V
DS
= 400 V, I
DS
= 0.813A, t = 20 sec., T
C
= 60C
Watts
050-5903 Rev C 9-2001
Symbol
C
iss
C
oss
C
rss
t
d
(on)
t
r
t
d
(off)
t
f
MIN
TYP
MAX
6040
7300
1220
1710
510
770
13
26
20
40
54
81
11
20
UNIT
pF
ns
Symbol
SOA1
MIN
TYP
MAX
325
UNIT
Characteristic
Safe Operating Area
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25C
R
G
= 0.6
W
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
I
D
, DRAIN CURRENT (AMPERES)
I
D
, DRAIN CURRENT (AMPERES)
80
60
40
20
0
80
60
40
20
0
0
20
40
60
80
100
0
4
8
12
16
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
8 V
6 V
7 V
VGS=9V, 10V, 12V, 14 & 16V
5 V
8 V
6 V
7 V
5 V
9 V
VGS=10, 12, 14 & 16V
I
D
, DRAIN CURRENT (AMPERES)
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
I
D
, DRAIN CURRENT (AMPERES)
I
D
, DRAIN CURRENT (AMPERES)
(NORMALIZED)
C, CAPACITANCE (pF)
V
GS
(TH), THRESHOLD VOLTAGE
B
V
DSS
(ON), DRAIN-TO-SOURCE BREAKDOWN
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
VOLTAGE (NORMALIZED)
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
T
C
, CASE TEMPERATURE (C)
T
J
, JUNCTION TEMPERATURE (C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
T
J
, JUNCTION TEMPERATURE (C)
T
C
, CASE TEMPERATURE (C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
VDS> ID (ON) x RDS (ON)MAX.
250SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
TJ = +25C
TJ = -55C
TJ = +125C
TJ = +125C
TJ = +25C
TJ = -55C
VGS=10V
VGS=20V
NORMALIZED TO
V
GS
= 10V @ 0.5 I
D
[Cont.]
I
D
= 0.5 I
D
[Cont.]
V
GS
= 10V
Crss
Coss
Ciss
0
2
4
6
8
0
20
40
60
80
25
50
75
100
125
150
-50 -25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125
150
-50
-25
0
25
50
75
100 125 150
1
5
10
50 100
500
.01
.1
1
10
50
1.30
1.20
1.10
1.00
0.90
0.80
1.15
1.10
1.05
1.00
0.95
0.90
0.85
1.2
1.1
1.0
0.9
0.8
0.7
0.6
30,000
10,000
5,000
1,000
500
100
40
30
20
10
0
50
40
30
20
10
0
2.5
2.0
1.5
1.0
0.5
0.0
175
100
50
10
5
1
.5
.1
APL501J
OPERATION HERE
LIMITED BY RDS (ON)
TC =+25C
TJ =+150C
SINGLE PULSE
100S
1mS
10mS
100mS
D C
050-5903 Rev C 9-2001
APT's devices are covered by one or more of the following U.S.patents:
4,895,810
5,045,903
5,089,434
5,182,234
5,019,522
5,262,336
5,256,583
4,748,103
5,283,202
5,231,474
5,434,095
5,528,058
SOT-227 (ISOTOP
) Package Outline
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
* Source
Drain
Gate
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
* Source
Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
ISOTOP
is a Registered Trademark of SGS Thomson.
"UL Recognized" File No. E145592
APL501J
050-5903 Rev C 9-2001