MAXIMUM RATINGS
All Ratings: T
C
= 25C unless otherwise specified.
SOT-227
G
S
S
D
"UL Recognized" File No. E145592 (S)
APL1001J
1000V
18.0A 0.60
W
SINGLE DIE ISOTOP
PACKAGE
ISOTOP
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
POWER MOS IV
G
D
S
050-5904 Rev A 3-2000
PRELIMINARY
STATIC ELECTRICAL CHARACTERISTICS
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25C
Pulsed Drain Current
1
and Inductive Current Clamped
Gate-Source Voltage
Total Power Dissipation @ T
C
= 25C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
APL1001J
1000
18
72
30
520
4.16
-55 to 150
300
Characteristic / Test Conditions / Part Number
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250 A)
On State Drain Current
2
(V
DS
> I
D
(ON) x R
DS
(ON) Max, V
GS
= 8V)
Drain-Source On-State Resistance
2
(V
GS
= 10V, 0.5 I
D
[Cont.])
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125C)
Gate-Source Leakage Current (V
GS
= 30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 2.5mA)
MIN
TYP
MAX
1000
18
0.60
25
250
100
2
4
UNIT
Volts
Amps
Volts
Watts
W/C
C
UNIT
Volts
Amps
Ohms
A
nA
Volts
Symbol
V
DSS
I
D
I
DM
, l
LM
V
GS
P
D
T
J
,T
STG
T
L
Symbol
BV
DSS
I
D
(ON)
R
DS
(ON)
I
DSS
I
GSS
V
GS
(TH)
THERMAL CHARACTERISTICS
Symbol
R
Q
JC
R
Q
CS
Characteristic
Junction to Case
Case to Sink
(Use High Efficiency Thermal Joint Compound and Planer Heat Sink Surface.)
MIN
TYP
MAX
0.24
0.06
UNIT
C/W
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
Bend, Oregon 97702 -1035
Phone: (541) 382-8028
FAX: (541) 388-0364
EUROPE
Chemin de Magret
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
APT Website - http://www.advancedpower.com
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.3
0.1
0.05
0.01
0.005
0.001
Z
q
JC
, THERMAL IMPEDANCE (
C/W)
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x Z
JC + TC
t1
t2
P
DM
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D=0.5
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
* Source
Drain
Gate
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
* Source
Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
050-5904 Rev A 3-2000
DYNAMIC CHARACTERISTICS
APL1001J
1
Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
2
Pulse Test: Pulse width < 380 S, Duty Cycle < 2%
3
See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
SAFE OPERATING AREA CHARACTERISTICS
Test Conditions / Part Number
V
DS
= 400 V, I
DS
= 0.813A, t = 20 sec., T
C
= 60C
Symbol
C
iss
C
oss
C
rss
t
d
(on)
t
r
t
d
(off)
t
f
MIN
TYP
MAX
6100
780
285
14
14
60
14
UNIT
pF
ns
Symbol
SOA1
MIN
TYP
MAX
300
375
UNIT
Characteristic
Safe Operating Area
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25C
R
G
= 0.6
W
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Watts
APT's devices are covered by one or more of the following U.S.patents:
4,895,810
5,045,903
5,089,434
5,182,234
5,019,522
5,262,336
5,256,583
4,748,103
5,283,202
5,231,474
5,434,095
5,528,058
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