Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
Low On-resistance
BV
DSS
40V
Single Drive Requirement
R
DS(ON)
25m
Surface Mount Package
I
D
7A
Description
Absolute Maximum Ratings
Symbol
Units
V
DS
V
V
GS
V
I
D
@T
A
=25
A
I
D
@T
A
=70
A
I
DM
A
P
D
@T
A
=25
W
W/
T
STG
T
J
Symbol
Value
Unit
Rthj-a
Thermal Resistance Junction-ambient
3
Max.
62.5
/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Storage Temperature Range
Total Power Dissipation
2
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.016
Continuous Drain Current
3
, V
GS
@ 10V
5.5
Pulsed Drain Current
1,2
20
Gate-Source Voltage
Continuous Drain Current
3
, V
GS
@ 10V
7
Parameter
Rating
Drain-Source Voltage
40
200407031
AP9962M
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
20
S1
G1 S2
G2
D1
D1
D2
D2
SO-8
G2
D2
S2
G1
D1
S1
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250uA
40
-
-
V
B
V
DSS
/T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
, I
D
=1mA
-
0.1
-
V/
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=10V, I
D
=7A
-
-
25
m
V
GS
=4.5V, I
D
=5A
-
-
40
m
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250uA
1
-
3
V
g
fs
Forward Transconductance
V
DS
=10V, I
D
=7A
-
11
-
S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=40V, V
GS
=0V
-
-
1
uA
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=32V ,V
GS
=0V
-
-
25
uA
I
GSS
Gate-Source Leakage
V
GS
=
-
-
nA
Q
g
Total Gate Charge
2
I
D
=7A
-
25.8
-
nC
Q
gs
Gate-Source Charge
V
DS
=32V
-
4.4
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=4.5V
-
9.1
-
nC
t
d(on)
Turn-on Delay Time
2
V
DS
=20V
-
10.6
-
ns
t
r
Rise Time
I
D
=1A
-
6.8
-
ns
t
d(off)
Turn-off Delay Time
R
G
=5.7
,
V
GS
=10V
-
26.3
-
ns
t
f
Fall Time
R
D
=20
-
12
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
1165
-
pF
C
oss
Output Capacitance
V
DS
=25V
-
205
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
142
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
V
SD
Forward On Voltage
2
I
S
=1.7A, V
GS
=0V
-
-
1.2
V
t
rr
Reverse Recovery Time
Is=1.7A,
V
GS=0
V
,
-
21.2
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
16
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2
copper pad of FR4 board ; 135
/W when mounted on min. copper pad.
AP9962M
20V
100
AP9962M
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
15
20
25
30
35
3
4
5
6
7
8
9
10
11
V
GS
(V)
R
DS(ON)
(m
)
I
D
= 7 A
T
C
=25
o
C
0
5
10
15
20
25
0
1
2
3
4
5
V
DS
, Drain-to-Source Voltage (V)
I
D
, Dr
a
i
n C
u
r
r
e
nt
(A
)
T
C
=150
o
C
8.0V
V
G
=3.0V
5.0V
10V
4.0V
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
o
rmalize
d
R
DS(ON)
I
D
=7A
VG=10V
0
5
10
15
20
25
0
1
2
3
4
5
6
V
DS
, Drain-to-Source Voltage (V)
I
D
, Dr
a
i
n C
u
r
r
e
nt
(A
)
T
C
=25
o
C
10V
8.0V
5.0V
4.0V
V
G
=3.0V
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
-50
0
50
100
150
Junction Temperature (
o
C )
V
GS
(t
h)
0.01
0.1
1
10
100
0
0.4
0.8
1.2
1.6
V
SD
(V)
I
S
(A
)
T
j
=25
o
C
T
j
=150
o
C
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Circuit
Fig 12. Gate Charge Circuit
AP9962M
0.01
0.1
1
10
100
0.1
1
10
100
V
DS
(V)
I
D
(A
)
T
c
=25
o
C
Single Pulse
1s
1ms
10ms
100ms
DC
10
100
1000
10000
1
5
9
13
17
21
25
29
VDS (V)
C (
p
F
)
f=1.0MHz
Ciss
Crss
Coss
0
2
4
6
8
10
12
14
0
5
10
15
20
25
30
35
Q
G
, Total Gate Charge (nC)
V
GS
, Gate
to S
o
u
r
c
e
V
oltage
(
V
)
V
DS
=20V
V
DS
=25V
V
DS
=32V
I
D
=7A
0.8x RATED V
DS
TO THE
OSCILLOSCOPE
-
+
D
G
S
V
DS
V
GS
I
D
I
G
1~ 3 mA
0.5x RATED V
DS
TO THE
OSCILLOSCOPE
-
+
10V
D
G
S
V
DS
V
GS
R
G
R
D
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
No
rm
a
lized
T
h
erm
a
l Resp
o
n
se (
R
th
ja
)
0.01
0.05
0.1
0.2
DUTY=0.5
Single Pulse
P
DM
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
Rthja = 135
/W
t
T
0.02
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