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Электронный компонент: 1517-110M

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ADVANCED POWER TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE
CHECK OUR WEB SITE AT
WWW. ADVANCEDPOWER.COM
OR CONTACT OUR FACTORY DIRECT.
Advanced Power Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
1517-110M
110 Watts, 40 Volts, 200
s, 10%
Radar 1480 to 1650 MHz
GENERAL DESCRIPTION
The 1517-110M is an internally matched, COMMON BASE transistor capable
of providing 110 Watts of pulsed RF output power at 200 microseconds pulse
width, 10% duty factor across the band 1480 to 1650 MHz. This hermetically
solder-sealed transistor is specifically designed for upper L-Band radar
applications. It utilizes gold metallization and diffused emitter ballasting to
provide high reliability and supreme ruggedness.
CASE OUTLINE
55AW-1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @25
C
1
350
W
Maximum Voltage and Current
Collector to Base Voltage (BV
CES
) 70
V
Emitter to Base Voltage (BV
EBO
) 3
V
Collector Current (I
C
) 9
A
Maximum Temperatures
Storage Temperature
-65 to +200
C
Operating Junction Temperature
+200
C
FUNCTIONAL CHARACTERISTICS @ 25
C
SYMBOL CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX UNITS
P
out
Power Output
110
120
150
W
P
g
Power
Gain
7.3
8.6
dB
c
Collector Efficiency
40
%
IR
L
Input Return Loss
9 dB
Pd
Pulse Droop
F = 1480-1650 MHz
Vcc = 40 Volts
Pin = 20.5 W
Pulse Width = 200
s
Duty Factor = 10%
0.5 dB
VSWR
1
Load Mismatch Tolerance
F=1480 MHz, Pin = 20.5 W
3:1
ELECTRICAL CHARACTERISTICS @ 25
C
I
EBO
Emitter cutoff current
V
EB
= 3 V
10
mA
BV
CES
Collector to Emitter Breakdown I
C
= 40 mA
70
V
h
FE
DC Current Gain
V
CE
= 5V, I
c
= 1A
20
jc
1
Thermal Resistance
0.5
C/W
NOTES: 1. Pulse condition of 200
sec, 10%



ADVANCED POWER TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE
CHECK OUR WEB SITE AT
WWW. ADVANCEDPOWER.COM
OR CONTACT OUR FACTORY DIRECT.
Advanced Power Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
1517-110M
Performance Curves

Typical Impedances
IMPEDANCE


Freq(MHz)
Zs
Zl
1480
4.76 j 5.08
2.50 j 7.67
1510
4.78 j 4.60
2.40 j 7.40
1560
4.84 j 4.13
2.31 j 7.15
1610
4.95 j 3.69
2.22 j 6.91
1650
5.10 j 3.27
2.14 j 6.68
Pout vs Pin
Vcc=40V, 200us, 10%,
0
2 5
5 0
7 5
10 0
12 5
15 0
17 5
0
5
10
15
2 0
2 5
3 0
Pin ( W )
14 8 0 M Hz
15 6 0 M Hz
16 6 0 M Hz
Series Load Impedance Vs Frequency
Vcc= 40Volts, Pout = 110W, 200 us, 10%
1.00
1.50
2.00
2.50
3.00
1460
1510
1560
1610
1660
Frequency
Rc
l ( Ohms
)
-8.00
-7.50
-7.00
-6.50
-6.00
jXc
l
( Ohms
)
Rl
JXl
Series Sopurce Impedance vs Frequency
Vcc = 40 Volts, Pout = 110W, 200 us, 10%
3.5
4.0
4.5
5.0
5.5
1410 1460 1510 1560 1610 1660
Frequency
Ri
n
(
Oh
m
s
)
-6.0
-5.0
-4.0
-3.0
-2.0
jXin (
O
h
ms
)
Rin
jXin
Power Gain and Efficiency vs Frequency
Vcc = 40 V, Pout = 110W, 200 us, 10%
0
2
4
6
8
10
12
1460
1510
1560
1610
1660
Frequency MHz
Powe
r Ga
in
0
10
20
30
40
50
E
ffi
ci
ency %
Pgain
Efficiency
ADVANCED POWER TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE
CHECK OUR WEB SITE AT
WWW. ADVANCEDPOWER.COM
OR CONTACT OUR FACTORY DIRECT.
Advanced Power Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
1517-110M
BROADBAND TEST CIRCUIT





ADVANCED POWER TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE
CHECK OUR WEB SITE AT
WWW. ADVANCEDPOWER.COM
OR CONTACT OUR FACTORY DIRECT.
Advanced Power Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

1517-110M
Case Outline