ABB Semiconductors AG reserves the right to change specifications without notice.
V
CE
=
1200 V
I
C
=
100 A
Doc. No. 5SYA1511-00 May. 01
Low-loss, rugged IGBT chip-set
EMC friendly diode with positive
temp. coefficient of on-state
Low profile compact baseless
package
Industry standard package
UL File no. E63532
Maximum Rated Values
(T
vj
= 25C, unless specified otherwise)
Parameter
Symbol
Conditions
Values
Unit
Collector-Emitter Voltage
V
CES
V
GE
shorted
1200
V
DC Collector Current
I
C
T
hs
= 60C
100
A
Peak Collector Current
I
CM
Pulse: tp=1ms, T
hs
= 60C
200
A
Gate Emitter Voltage
V
GES
20
V
Total Power Dissipation
Ptot
T
hs
= 25C per switch
450
W
IGBT Switching SOA
SwSOA
I
C
= 200 A, V
CEM
= 1200 V, V
CC
= 1000 V,
V
GE
=
15 V, T
vj
=125C
voltages measured on auxiliary terminals
IGBT Short Circuit SOA
SCSOA
V
CC
= 900 V, V
CEM
= 1200 V, t
p
= 10 s,
V
GE
=
15 V, Tvj =125 C
DC Forward Current
I
F
100
A
Peak Forward Current
I
FM
Pulse: tp = 1ms, T
hs
= 60C
200
A
IGBT Module LoPak3 NPT
5SNS 0100W120000
5SNS 0100W120000
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1511-00 May. 01
2 of 8
Maximum Rated Values (cont.)
(T
vj
= 25C, unless specified otherwise)
Parameter
Symbol
Conditions
Values
Unit
Junction Temperature
T
vj
- 40 ~ 150
C
Storage Temperature
T
tstg
/T
cop
- 40 ~ 125
C
Isolation Voltage
V
iso
1 min, f = 50Hz
2500
V
Base to Heatsink
(M5) Hole 5.5mm diameter
3 ~ 6
Nm
Main Terminals
Pin: 1.15*1.0 mm
PCB mounting
Pitch of pins : 3.81 mm
Mounting
Gate, Emitter Aux. Pin: 1.15*1.0 mm
IGBT Characteristic Values
(T
vj
= 25C, unless specified otherwise)
Parameter
Symbol
Conditions
min. typ.
max. Unit
T
vj
= 25 C
2.45
3.00
V
Collector-Emitter
Saturation Voltage
V
CE(sat)
I
C
= 100 A, V
GE
= 15 V
T
vj
= 125 C
2.95
V
Collector Cut-off Current
I
CES
V
CE
= 1200 V, V
GE
= 0 V, T
vj
= 125 C
8
mA
Gate-Emitter leakage
Current
I
GES
V
CE
= 0 V, V
GE
=
20 V, T
vj
= 125 C
500
nA
Gate-Emitter Threshold
Voltage
V
GE(TO)
I
C
= 4 mA, V
CE
= V
GE
4.5
6.5
V
Total Gate Charge
Q
ge
I
C
= 100 A, V
CE
= 600 V, V
GE
= -15 to 15 V
1000
nC
Input Capacitance
C
ies
8
nF
Output Capacitance
C
oes
0.7
nF
Reverse Transfer
Capacitance
C
res
V
CE
= 25 V, V
GE
= 0 V, f = 1MHz
0.5
nF
Turn-On Delay Time
t
d(on)
0.075
s
Rise Time
t
r
I
C
= 100 A, V
CC
= 600 V, R
gon
= 10
,
T
vj
= 125 C, V
GE
=
15 V
0.065
s
Turn-Off Delay Time
t
d(off)
0.46
s
Fall Time
t
f
I
C
= 100 A, V
CC
= 600 V, R
goff
= 10
,
T
vj
= 125 C,V
GE
=
15 V
0.05
s
Turn-on Switching Energy
E
on
R
gon
= 10
13.0
mJ
Turn-off Switching Energy
E
off
R
goff
= 10
I
C
= 100 A, T
vj
= 125 C,
V
CC
= 600 V, V
GE
=
15 V,
inductive load, integrated up
to: 3% V
CE
(E
on
), 1% I
C
(E
off
)
11.0
mJ
Module stray Inductance
Plus to Minus
L
s DC
25
nH
5SNS 0100W120000
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1511-00 May. 01
3 of 8
Diode Characteristic Values
(T
vj
= 25C, unless specified otherwise)
Parameter
Symbol
Conditions
min.
typ. max.
Unit
T
vj
= 25 C
2.00 2.45
Forward Voltage
V
F
I
F
= 100 A
T
vj
= 125 C
2.00
V
Reverse Recovery Current
I
rrm
85
A
Reverse Recovery Charge
Q
rr
19
C
Reverse Recovery Time
t
rr
I
F
= 100 A, R
gon
= 10
, V
CC
= 600 V,
V
GE
=
15 V, T
vj
= 125 C
0.4
s
Reverse Recovery Energy
E
rec
I
F
= 100 A, T
vj
= 125 C, V
CC
= 600 V,
R
gon
= 10
, V
GE
=
15 V,
inductive load, fully integrated
7.5
mJ
Thermal Characteristics
(T
j
= 25C, unless specified otherwise)
Parameter
Symbol
Conditions
min.
typ. max.
Unit
IGBT Thermal Resistance
Junction to Heatsink
R
th
j-h
Igbt
0.280 C/W
Diode Thermal Resistance
Junction to Heatsink
R
th
j-h
Diode
0.560 C/W
Equivalent IGBT Thermal
Resistance Junct. to Case
R
th
j-c
Igbt
0.180 C/W
Equivalent Diode Thermal
Resistance Junct. to Case
R
th
j-c
Diode
Heatsink:
flatness < +/- 20 m,
roughness < 6 m without ridge
Thermal grease:
thickness: 30 m < t < 50 m
0.360 C/W
Mechanical Properties
Parameter
Symbol
Conditions
min.
typ. max.
Unit
Dimensions
L* W* H Typical , see outline drawing
121.5 * 61.5 * 20.5
mm
Term. to base:
8.5
mm
Clearance Distance
D
C
acc. IEC 664-1 and
prEN50124-1:1995 Term. to term:
9.5
mm
Term. to base:
12.5
mm
Surface Creepage
Distance
D
SC
acc. IEC 664-1 and
prEN50124-1:1995 Term. to term:
15.5
mm
Weight
215
gr
5SNS 0100W120000
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1511-00 May. 01
4 of 8
Electrical configuration
Outline drawing
5SNS 0100W120000
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1511-00 May. 01
5 of 8
Fig. 1 Typ. Output Characteristics at Tvj=25C
Fig. 2 Typ. Output Characteristics at Tvj=125C
Fig. 3 Typ. Transfer Characteristics
Fig. 4 Typ. Gate charge Characteristics
5SNS 0100W120000
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1511-00 May. 01
6 of 8
Fig. 5
Typ. Switching Energies per pulse vs
on-state current
Fig. 6
Typ. Switching Energies per pulse vs
gate resistor
Fig. 7
Typ. Switching times vs on-state
current
Fig. 8
Typ. Switching times vs gate resistor
5SNS 0100W120000
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1511-00 May. 01
7 of 8
Fig. 9 Typ. IGBT Capacitances vs collector-
emitter Voltage
Fig. 10
Typ. Diode forward Characteristics
Fig. 11
Typ. Reverse Recovery
Characteristics vs forward current
Fig. 12
Typ. Reverse Recovery Characteristics
vs gate resistor
5SNS 0100W120000
Fig. 13
Typ. Thermal impedance vs time
ABB Semiconductors reserves the right to change specifications without notice.
ABB Semiconductors AG
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)62 888 6419
Fax +41 (0)62 888 6306
Email
Info@ch.abb.com
Internet
www.abbsem.com
Doc. No. 5SYA1511-00 May. 01
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