ABB Semiconductors AG reserves the right to change specifications without notice.
V
RRM
=
4500 V
I
FAVM
=
1170 A
I
FSM
=
20 kA
V
F0
=
1.75 V
r
F
=
0.75 m
V
DClink
=
2800 V
Doc. No. 5SYA1163-00 Sep. 01
Patented free-floating technology
Industry standard housing
Cosmic radiation withstand rating
Low on-state and switching losses
Optimized to use in snubberless operation
Blocking
V
RRM
Repetitive peak reverse voltage
4500 V
Half sine wave, t
P
= 10 ms, f = 50 Hz
I
RRM
Repetitive peak reverse current
50 mA
V
R
= V
RRM,
T
j
= 125C
V
DClink
Permanent DC voltage for 100 FIT
failure rate
2800 V
100% Duty
V
DClink
Permanent DC voltage for 100 FIT
failure rate
3200 V
5% Duty
Ambient cosmic radiation at
sea level in open air.
Mechanical data
(see Fig. 6)
min.
36 kN
F
m
Mounting force
max.
44 kN
a
Acceleration:
Device unclamped
Device clamped
50
200
m/s
2
m/s
2
m
Weight
0.83 kg
D
S
Surface creepage distance
33 mm
D
a
Air strike distance
20 mm
Fast Recovery Diode
5SDF 10H4503
PRELIMINARY
5SDF 10H4503
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1163-00 Sep. 01
page 2 of 5
On-state
(see Fig. 3)
I
FAVM
Max. average on-state current
1170 A
I
FRMS
Max. RMS on-state current
1840 A
Half sine wave, T
c
= 70C
I
FSM
Max. peak non-repetitive
20 kA
tp
=
10 ms
Before surge:
surge current
47 kA
tp =
1 ms
T
c
= T
j
= 125C
2.0
10
6
A
2
s
tp =
10 ms
After surge:
I
2
dt
Max. surge current integral
1.1
10
6
A
2
s
tp =
1 ms
V
R
0 V
V
F
Forward voltage drop
3.36 V
I
F
=
2200 A
V
F0
Threshold voltage
1.75 V
Approximation for
r
F
Slope resistance
0.75 m
I
F
= 500...4000
A
T
j
= 125C
Turn-on
(see Fig. 2)
V
fr
Peak forward recovery voltage
80 V
di/dt = 600 A/s, T
j
= 125C
Turn-off
(see Fig. 5, 7)
di/dt
crit
Max. decay rate of on-state current
600 A/s I
F
= 4000 A,
T
j
= 125 C
V
Dclink
= 2800 V
I
rr
Reverse recovery current
1500 A
Q
rr
Reverse recovery charge
3800 C
E
rr
Turn-off energy
9.5 J
I
F
= 3300 A, V
DC-Link
= 2800 V
di/dt = 600 A/s, L
CL
= 300 nH
C
CL
= 8 F, R
CL
= 0.6
, T
j
= 125C
Thermal
(see Fig. 1)
T
j
Operating junction temperature range
0...125C
T
stg
Storage temperature range
-40...125C
R
thJC
Thermal resistance junction to case
24 K/kW
Anode side cooled
24 K/kW
Cathode side cooled
12 K/kW
Double side cooled
R
thCH
Thermal resistance case to heatsink
6 K/kW
Single side cooled
F
m
=
36... 44 kN
3 K/kW
Double side cooled
Analytical function for transient thermal impedance.
i
1
2
3
4
R
i
(K/kW)
7.44
2.00
1.84
0.71
i
(s)
0.5
0.09
0.01
0.005
)
e
-
(1
R
=
(t)
Z
n
1
i
/
t
-
i
thJC
=
i
F
m
= 36... 44 kN Double side cooled
5SDF 10H4503
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1163-00 Sep. 01
page 3 of 5
10
-3
10
-2
10
-1
10
0
10
1
10
2
t [ms]
0
2
4
6
8
10
12
14
Z
thIC
[K/kW]
F
m
= 36..44 kN
Double Side Cooling
Fig. 1 Transient thermal impedance (junction to case) vs. time in analytical and graphical form (max.
values).
0
1
2
3
4
5
V
F
[V]
0
500
1000
1500
2000
2500
3000
3500
4000
I
F
[A]
T
j
= 125C
Fig. 2 Typical forward voltage waveform when
the diode is turned on with high di/dt.
Fig. 3 Forward current vs. forward voltage.
5SDF 10H4503
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1163-00 Sep. 01
page 4 of 5
0
1000
2000
3000
4000
I
FQ
[A]
0
1
2
3
4
5
6
7
8
9
10
E
rr
[J]
T
j
= 125C
di
F
/dt = 600 A/
s
V
DC-link
= 2800 V
Voltage Clamp
0
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
0
1000
2000
3000
4000
V
D
[V]
I
F
[A]
T
j
= 0..125 C
d
iF
/d
t
= 600 A/s
V
RM
V
RRM
Voltage Clamp
Fig. 4 Diode turn-off energy per pulse vs. turn-
off current.
Fig. 5 Max. repetitive turn off current.
5SDF 10H4503
ABB Semiconductors AG reserves the right to change specifications without notice.
ABB Semiconductors AG
Doc. No. 5SYA1163-00 Sep. 01
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)62 888 6419
Fax
+41 (0)62 888 6306
Email
abbsem@ch.abb.com
Internet
www.abbsem.com
Fig. 6 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated
otherwise.
L
CL
Fig. 7 Typical current and voltage waveforms at turn-off in a circuit with voltage clamp.
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