ABB Semiconductors AG reserves the right to change specifications without notice.
V
RRM
=
400 V
I
FAVM
=
7110 A
I
FRMS
=
11200 A
I
FSM
=
55000 A
V
F0
=
0.74 V
r
F
=
0.026 m
Doc. No. 5SYA1158-01 Oct.00
Optimized for high current rectifiers
Very low on-state voltage
Very low thermal resistance
Blocking
V
RRM
Repetitive peak reverse voltage
400 V
Half sine wave, t
P
= 10 ms, f = 50 Hz
V
RSM
Maximum peak reverse voltage
450 V
Half sine wave, t
P
= 10 ms
I
RRM
Repetitive peak reverse current
50 mA T
j
= 170 C
V
R
= V
RRM
Mechanical
F
M
Mounting force
min.
20 kN
max.
24 kN
a
Acceleration:
Device unclamped
Device clamped
50
200
m/s
2
m/s
2
m
Weight
0.14 kg
D
S
Surface creepage distance
4 mm
D
a
Air strike distance
4 mm
Fig. 1
Outline drawing.
All dimensions are in millimeters and represent
nominal values unless stated otherwise.
Rectifier Diode
5SDD 71X0400
5SDD 71X0400
ABB Semiconductors reserves the right to change specifications without notice.
page 2 of 4
Doc. No. 5SYA1158-01 Oct.00
On-state
I
FAVM
Max. average on-state current
7110 A
I
FRMS
Max. RMS on-state current
11200 A
Half sine wave, T
c
= 85 C
55000 A
t
p
=
10 ms Before surge
I
FSM
Max. peak non-repetitive surge current
60000 A
t
p
=
8.3 ms T
j
= 170 C
I
2
dt
Max. surge current integral
15100 kA
2
s t
p
=
10 ms After surge:
15000 kA
2
s t
p
=
8.3 ms V
R
0V
V
F min
Minimum on-state voltage
0.97 V
V
F max
Maximum on-state voltage
1.02 V
I
F
=
5000 A
T
j
= 25 C
V
F0
Threshold voltage
0.74 V
Approximation for T
j
= 170 C
r
F
Slope resistance
0.026 m I
F
=
5 - 15 kA
Thermal characteristics
T
j
Operating junction temperature range
-40...170 C
T
stg
Storage temperature range
-40...170 C
20 K/kW Anode side cooled
20 K/kW Cathode side cooled
R
thJC
Thermal resistance
junction to case
10 K/kW Double side cooled
10 K/kW Single side cooled
R
thCH
Thermal resistance
case to heatsink
5 K/kW Double side cooled
F
M
= 20...24 kN
)
e
-
(1
R
=
(t)
Z
4
1
i
/
t
-
thJC
i
=
i
i
1
2
3
4
R
i
(K/kW)
5.28
3.30
0.87
0.55
i
(s)
0.07
0.039
0.0034
0.00013
F
M
= 20... 24 kN
10
-3
10
-2
10
-1
10
0
t [s]
0
2
4
6
8
10
12
Z
thJC
[K/kW]
Double Side Cooled
Fm = 20...24 kN
5
S
DD 71X
0
4
0
0
Double side cooled
Fig. 2 Transient thermal impedance (junction-to-case) vs. time in analytical and graphical forms.
5SDD 71X0400
ABB Semiconductors reserves the right to change specifications without notice.
page 3 of 4
Doc. No. 5SYA1158-01 Oct.00
On-state characteristics
Surge current characteristics
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V
F
[V]
0
2000
4000
6000
8000
10000
12000
14000
16000
18000
20000
I
F
[A]
max.
T
j
= 170C
min.
5S
D
D
71X
040
0
10
0
10
1
10
2
t [ms]
I
FSM
[kA]
40
50
60
70
80
90
100
I
FSM
i
2
t
i
2
dt [MA
2
s]
10
12
14
16
18
20
22
T
j
= 170C
5SDD 71X0400
Fig. 3
Forward current vs. forward voltage (min.
and max. values).
Fig. 4 Surge current and fusing integral vs. pulse
width (max. values) for non-repetitive, half-
sinusoidal surge current pulses.
Current load capability
1
1 0
1 0 0
1 0
1 1
1 2
1 3
1 4
1 5
1 6
I
( kA )
n =
50
pulses
n =
100
pulses
n =
500
pulses
n = 1000
pulses
ID vs. ED, 1000 Hz square wave, T = 100 C
Duty cycle ED (%)
D
C
5
S
D
D
71X
04
00
Fig. 5
DC-output current with single-phase centre tap
5SDD 71X0400
Current load capacity, cont.
1
10
100
10
12
14
16
18
20
22
I
D
(k A )
n =
50 pulses
n = 100 pulses
n = 500 pulses
n = 1000 pulses
ID vs. ED, 1000 Hz square-wave, T = 60 C
h
Duty cycle ED (%)
5S
DD 71X
0400
Fig. 6
DC-output current with single-phase centre tap
-
+
I
D
Fig. 7 Definition of ED for typical welding
sequence
Fig. 8 Definition of ID for single-phase centre tap
ABB Semiconductors reserves the right to change specifications without notice.
ABB Semiconductors AG
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)62 888 6419
Fax +41 (0)62 888 6306
Email abbsem@ch.abb.com
Internet www.abbsem.com
Doc. No. 5SYA1158-01 Oct.00
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