ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
V
RSM
=
5200 V
I
FAVM
=
1978 A
I
FRMS
=
3106 A
I
FSM
= 25.610
3
A
V
F0
=
0.94 V
r
F
=
0.284 m
Rectifier Diode
5SDD 20F5000
Doc. No. 5SYA1162-01 Jan. 03
Very low on-state losses
Optimum power handling capability
Blocking
Maximum rated values
1)
Parameter
Symbol Conditions
Value
Unit
Repetetive peak reverse voltage
V
RRM
f = 50 Hz, t
p
= 10ms, T
j
= -40...160C
5000
V
Non - repetetive peak reverse voltage V
RSM
f = 5 Hz, t
p
= 10ms, T
j
= -40...160C
5200
V
Characteristic values
Parameter
Symbol Conditions
min
typ
max
Unit
Max. (reverse) leakage current
I
RRM
V
RRM
, Tj = 160C
50
mA
Mechanical data
Maximum rated values
1)
Parameter
Symbol Conditions
min
typ
max
Unit
Mounting force
F
M
20
22
24
kN
Acceleration
a
Device unclamped
50
m/s
2
Acceleration
a
Device clamped
100
m/s
2
Characteristic values
Parameter
Symbol Conditions
min
typ
max
Unit
Weight
m
0.5
kg
Housing thickness
H
26
mm
Pole-piece diameter
D
P
47
mm
Surface creepage distance
D
S
33
mm
Air strike distance
D
a
18
mm
1) Maximum rated values indicate limits beyond which damage to the device may occur
5SDD 20F5000
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1162-01 Jan. 03
page 2 of 5
On-state
Maximum rated values
1)
Parameter
Symbol Conditions
min
typ
max
Unit
Max. average on-state
current
I
FAVM
50 Hz, Half sine wave, T
C
= 85 C
1978
A
Max. RMS on-state current I
FRMS
3106
A
Max. peak non-repetitive
surge current
I
FSM
25.610
3
A
Limiting load integral
I
2
t
t
p
= 10 ms, T
j
= 160C,
V
R
= 0 V
2.72710
6
A
2
s
Max. peak non-repetitive
surge current
I
FSM
2410
3
A
Limiting load integral
I
2
t
t
p
= 8.3 ms, T
j
= 160C,
V
R
= 0 V
2.8810
6
A
2
s
Characteristic values
Parameter
Symbol Conditions
min
typ
max
Unit
On-state voltage
V
F
I
F
= 4000 A, T
j
= 160C
2.1
V
Threshold voltage
V
(T0)
0.94
V
Slope resistance
r
T
T
j
= 160C
I
T
= 2827...8480 A
0.284
m
Switching
Characteristic values
Parameter
Symbol Conditions
min
typ
max
Unit
Recovery charge
Q
rr
di
F
/dt = -30 A/
s, V
R
= 100 V
I
FRM
= 1000 A, T
j
= 160C
4500
5500
As
Thermal
Maximum rated values
1)
Parameter
Symbol Conditions
min
typ
max
Unit
Operating junction
temperature range
T
vj
-40
160
C
Storage temperature range T
stg
-40
160
C
Characteristic values
Parameter
Symbol Conditions
min
typ
max
Unit
Thermal resistance junction
to case
R
th(j-c)
Double-side cooled
15
K/kW
R
th(j-c)A
Anode-side cooled
24
K/kW
R
th(j-c)C
Cathode-side cooled
40
K/kW
Thermal resistance case to
heatsink
R
th(c-h)
Double-side cooled
4
K/kW
R
th(c-h)
Single-side cooled
8
K/kW
Analytical function for transient thermal
impedance:
)
e
-
(1
R
=
(t)
Z
n
1
i
t/
-
i
thJC
i
=
i
1
2
3
4
R
i
(K/kW)
6.060
3.850
3.780
1.320
i
(s)
0.6937
0.2040
0.0452
0.0040
Fig. 1 Transient thermal impedance junction-to-
case.
5SDD 20F5000
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1162-01 Jan. 03
page 3 of 5
0
1000
2000
3000
4000
5000
6000
7000
8000
9000
10000
0
1
2
3
4
V
F
( V )
I
F
( A
)
25 C
160 C
10
15
20
25
30
35
40
45
50
1
10
100
t ( m s )
I
FS
M
( k
A
)
2
2,5
3
3,5
4
4,5
5
5,5
6
i
2
dt
(1
0
6
A
2
s)
I
FSM
25C
i
2
dt
25C
160 C
160C
Fig. 2 Max. on-state characteristics.
Fig. 3 Surge forward current vs. pulse length. Half
sine wave, single pulse, V
R
= 0 V
0
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
0
400
800
1200
1600
2000
2400
I
FAV
( A )
P
T
( W
)
60
120 180
DC
0
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
0
400
800
1200
1600
2000
2400
I
FAV
( A )
P
T
( W
)
= 30 60 90 120 180
270
DC
Fig. 4 Forward power loss vs. average forward
current, sine waveform, f = 50 Hz
Fig. 5 Forward power loss vs. average forward
current, square waveform, f = 50 Hz
5SDD 20F5000
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1162-01 Jan. 03
page 4 of 5
60
70
80
90
100
110
120
130
140
150
160
170
0
400
800
1200
1600
2000
2400
I
FAV
( A )
T
C
(
C
)
180
60
120
DC
60
70
80
90
100
110
120
130
140
150
160
170
0
400
800
1200
1600
2000
2400
I
FAV
( A )
T
C
(
C
)
180
DC
270
120
90
60
= 30
Fig. 6 Max. case temperature vs aver. forward
current, sine waveform, f = 50 Hz
Fig. 7 Max. case temperature vs aver. forward
current, square waveform, f = 50 Hz
100
1000
10000
1
10
100
dI
F
/dt ( A/s )
Q
rr
( C
)
min
max
10
100
1000
1
10
100
dI
F
/dt ( A/s )
I
rr
M
( A
)
max
min
Fig. 8 Reverse recovery charge vs. dI
F
/dt,
I
F
= 1000 A; T
j
= T
jmax
, limit values
Fig. 9 Peak reverse recovery current vs. di
F
/dt,
I
F
= 1000 A; T
j
= T
jmax
, limit values
5SDD 20F5000
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd
Doc. No. 5SYA1162-01 Jan. 03
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)58 586 1419
Fax
+41 (0)58 586 1306
Email
abbsem@ch.abb.com
Internet
www.abb.com/semiconductors
Fig. 10 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise.
PDF 
ZIP