Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
Low On-Resistance
Low On-Resistance
Low On-Resistance
Low On-Resistance
BV
DSS
40V
Fast Switching Speed
Fast Switching Speed
Fast Switching Speed
Fast Switching Speed
R
DS(ON)
15m
Surface Mount Package
Surface Mount Package
Surface Mount Package
Surface Mount Package
I
D
10A
Description
Absolute Maximum Ratings
Symbol
Units
V
DS
V
V
GS
V
I
D
@T
A
=25
A
I
D
@T
A
=70
A
I
DM
A
P
D
@T
A
=25
W
W/
T
STG
T
J
Symbol
Value
Unit
Rthj-amb
Thermal Resistance Junction-ambient
3
Max.
50
/W
Data and specifications subject to change without notice
200120031
AP9985M
Parameter
Rating
Drain-Source Voltage
40
Gate-Source Voltage
20
Continuous Drain Current
3
10
Continuous Drain Current
3
8
Pulsed Drain Current
1
48
Total Power Dissipation
2.5
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.02
Thermal Data
Parameter
Storage Temperature Range
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
S
S
S
G
D
D
D
D
SO-8
G
D
S
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250uA
40
-
-
V
B
V
DSS
/T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
, I
D
=1mA
-
0.032
-
V/
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=10V, I
D
=10A
-
-
15
m
V
GS
=4.5V, I
D
=5A
-
-
25
m
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250uA
1
-
3
V
g
fs
Forward Transconductance
V
DS
=10V, I
D
=10A
-
35
-
S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=40V, V
GS
=0V
-
-
1
uA
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=32V ,V
GS
=0V
-
-
25
uA
I
GSS
Gate-Source Leakage
V
GS
= 20V
-
-
100
nA
Q
g
Total Gate Charge
2
I
D
=10A
-
14.7
-
nC
Q
gs
Gate-Source Charge
V
DS
=20V
-
7.1
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=4.5V
-
6.8
-
nC
t
d(on)
Turn-on Delay Time
2
V
DS
=20V
-
11.5
-
ns
t
r
Rise Time
I
D
=1A
-
6.3
-
ns
t
d(off)
Turn-off Delay Time
R
G
=3.3
,
V
GS
=10V
-
28.2
-
ns
t
f
Fall Time
R
D
=20
-
12.6
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
1725
-
pF
C
oss
Output Capacitance
V
DS
=25V
-
235
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
145
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
I
S
Continuous Source Current ( Body Diode )
V
D
=V
G
=0V , V
S
=1.3V
-
-
2.3
A
I
SM
Pulsed Source Current ( Body Diode )
1
-
-
25
A
V
SD
Forward On Voltage
2
T
j
=25
, I
S
=2.3A, V
GS
=0V
-
-
1.3
V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on FR4 board, t<10 sec.
AP9985M
AP9985M
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
0
15
30
45
0
1
2
3
4
V
DS
, Drain-to-Source Voltage (V)
I
D
,
Dra
i
n C
u
rre
nt
(A
)
T
C
=150
o
C
10V
6.0V
5.0V
4.5V
V
GS
=4.0V
0
10
20
30
40
50
0
1
2
3
4
V
DS
, Drain-to-Source Voltage (V)
I
D
,
Dra
i
n C
u
rre
nt
(A
)
T
C
=25
o
C
10V
6.0V
5.0V
4.5V
V
GS
=4.0V
0.2
0.8
1.4
2
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
No
rm
a
lize
d
R
DS
(ON)
I
D
=10A
V
GS
=10V
0
20
40
60
80
2
4
6
8
10
12
V
GS
(V)
R
DS
(
ON)
(m
)
I
D
=10A
T
C
=25
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
AP9985M
0.01
0.1
1
10
100
0.1
1
10
100
V
DS
(V)
I
D
(A
)
T
C
=25
o
C
Single Pulse
100us
1ms
10ms
100ms
1s
10s
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
No
rma
l
i
z
ed
Therma
l
R
e
sp
o
n
se (R
th
ja
)
P
DM
Duty Factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
t
T
0.02
0.01
0.05
0.1
0.2
Duty Factor = 0.5
Single Pulse
0
2
4
6
8
10
12
25
50
75
100
125
150
T
c
, Case Temperature (
o
C)
I
D
,
Dra
i
n C
u
rre
nt
(A
)
0
1
2
3
0
50
100
150
T
c ,
Case Temperature (
o
C)
P
D
(W
)
AP9985M
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
Fig 11. Forward Characteristic of
Fig 12. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
0.5
1
1.5
2
2.5
3
3.5
-50
0
50
100
150
T
j
, Junction Temperature (
o
C )
V
GS
(
t
h
)
(V
)
0
3
6
9
12
0
5
10
15
20
25
Q
G
, Total Gate Charge (nC)
V
GS
, G
a
te to S
o
u
r
ce Voltage (
V
)
I
D
=10A
V
DS
=12V
V
DS
=16V
V
DS
=20V
10
100
1000
10000
1
7
13
19
25
31
V
DS
(V)
C (
p
F)
f=1.0MHz
Ciss
Coss
Crss
0.01
0.1
1
10
100
0
0.4
0.8
1.2
V
SD
(V)
I
S
(A
)
Tj=25
o
C
Tj=150
o
C
PDF 
ZIP